MMBZ18VALT1G - ON Semiconductor

 Semiconductor Components Industries, LLC, 2012

January, 2012 − Rev. 13

1Publication Order Number:

MMBZ5V6ALT1/D

MMBZxxxALT1G Series,

SZMMBZxxxALT1G Series

24 and 40 Watt Peak Power

Zener Transient Voltage

Suppressors

SOT−23 Dual Common Anode Zeners

for ESD Protection

These dual monolithic silicon Zener diodes are designed for

applications requiring transient overvoltage protection capability. They

are intended for use in voltage and ESD sensitive equipment such as

computers, printers, business machines, communication systems,

medical equipment and other applications. Their dual junction common

anode design protects two separate lines using only one package. These

devices are ideal for situations where board space is at a premium.

Features

SOT−23 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration

Working Peak Reverse Voltage Range − 3 V to 26 V

Standard Zener Breakdown Voltage Range − 5.6 V to 33 V

Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),

per Figure 6 Waveform

ESD Rating:

− Class 3B (> 16 kV) per the Human Body Model

− Class C (> 400 V) per the Machine Model

Maximum Clamping Voltage @ Peak Pulse Current

Low Leakage < 5.0 mA

Flammability Rating UL 94 V−0

AEC−Q101 Qualified and PPAP Capable

SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

Pb−Free Packages are Available*

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260C for 10 Seconds

Package designed for optimal automated board assembly

Small package size for high density applications

Available in 8 mm Tape and Reel

Use the Device Number to order the 7 inch/3,000 unit reel.

Replace the “T1” with “T3” in the Device Number to order the

13 inch/10,000 unit reel.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SOT−23

CASE 318

STYLE 12

CATHODE 1

3 ANODE

CATHODE 2

MARKING DIAGRAM

See specific marking information in the device marking

column of the table on page 3 of this data sheet.

DEVICE MARKING INFORMATION

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

xxxMG

xxx = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G

@ TL  25C MMBZ12VALT1G thru MMBZ33VALT1G

Ppk 24

Total Power Dissipation on FR−5 Board (Note 2)

@ TA = 25C

Derate above 25C

PD

225

1.8

mW

mW/C

Thermal Resistance Junction−to−Ambient RqJA 556 C/W

Total Power Dissipation on Alumina Substrate (Note 3)

@ TA = 25C

Derate above 25C

PD

300

2.4

mW

mW/C

Thermal Resistance Junction−to−Ambient RqJA 417 C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 C

Lead Solder Temperature − Maximum (10 Second Duration) TL260 C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Non−repetitive current pulse per Figure 6 and derate above TA = 25C per Figure 7.

2. FR−5 = 1.0 x 0.75 x 0.62 in.

3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.

*Other voltages may be available upon request.

ORDERING INFORMATION

Device Package Shipping†

MMBZ5V6ALT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

SZMMBZ5V6ALT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBZ5V6ALT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

MMBZ6VxALT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

SZMMBZ6VxALT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBZ6VxALT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

MMBZ9V1ALT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBZ9V1ALT13G SOT−23

(Pb−Free)

10,000 / Tape & Reel

MMBZxxVALT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

SZMMBZxxVALT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBZxxVALT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

SZMMBZxxVALT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

http://onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

QVBR Maximum Temperature Coefficient of VBR

IFForward Current

VFForward Voltage @ IF

ZZT Maximum Zener Impedance @ IZT

IZK Reverse Current

ZZK Maximum Zener Impedance @ IZK

Uni−Directional TVS

IPP

VRWM

VCVBR

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)

(VF = 0.9 V Max @ IF = 10 mA) 24 WATTS

Device*

Device

Marking

VRWM

IR @

VRWM

Breakdown Voltage

Max Zener

Impedance (Note 5)

VC @ IPP

(Note 6)

QVBR

VBR (Note 4) (V) @ IT

ZZT

@ IZT ZZK @ IZK VCIPP

Volts mAMin Nom Max mA W W mA V A mV/5C

MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26

MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 − − − 8.7 2.76 2.80

MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 − − − 9.6 2.5 3.4

MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 − − − 14 1.7 7.5

(VF = 0.9 V Max @ IF = 10 mA) 40 WATTS

Device*

Device

Marking

VRWM

IR @

VRWM

Breakdown Voltage VC @ IPP (Note 6)

QVBR

VBR (Note 4) (V) @ ITVCIPP

Volts nA Min Nom Max mA V A mV/5C

MMBZ12VALT1G 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5

MMBZ15VALT1G 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3

MMBZ18VALT1G 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3

MMBZ20VALT1G 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2

MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3

MMBZ33VALT1G 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4

4. VBR measured at pulse test current IT at an ambient temperature of 25C.

5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)

= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.

6. Surge current waveform per Figure 6 and derate per Figure 7

* Include SZ-prefix devices where applicable.

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

http://onsemi.com

TYPICAL CHARACTERISTICS

−40 + 50

Figure 1. Typical Breakdown Voltage

versus Temperature

(Upper curve for each voltage is bidirectional mode,

lower curve is unidirectional mode)

TEMPERATURE (C)

+ 100 + 150

−40 + 25

1000

Figure 2. Typical Leakage Current

versus Temperature

TEMPERATURE (C)

+ 85 + 125

100

0.1

0.01

BREAKDOWN VOLTAGE (VOLTS)

(VBR @ IT)

IR (nA)

Figure 3. Typical Capacitance versus Bias Voltage

(Upper curve for each voltage is unidirectional mode,

lower curve is bidirectional mode)

0 25 50 75 100 125 150 175

300

250

200

150

100

Figure 4. Typical Capacitance versus Bias Voltage

(Upper curve for each voltage is unidirectional mode,

lower curve is bidirectional mode)

TEMPERATURE (C)

FR−5 BOARD

ALUMINA SUBSTRATE

01 2 3

320

280

240

160

120

C, CAPACITANCE (pF)

BIAS (V)

200

15 V

5.6 V

PD, POWER DISSIPATION (mW)

Figure 5. Steady State Power Derating Curve

01 2 3

C, CAPACITANCE (pF)

BIAS (V)

33 V

27 V

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

http://onsemi.com

TYPICAL CHARACTERISTICS

0.1 1 10 100 1000

100

Power is defined as VRSM x IZ(pk) where VRSM is

the clamping voltage at IZ(pk).

PW, PULSE WIDTH (ms)

UNIDIRECTIONAL

RECTANGULAR

WAVEFORM, TA = 25C

BIDIRECTIONAL

Figure 6. Pulse Waveform

VALUE (%)

100

001 2 34

t, TIME (ms)

Figure 7. Pulse Derating Curve

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAYS TO

50% OF IPP

HALF VALUE −IPP

tr  10 ms

PEAK VALUE −IPP

100

0 25 50 75 100 125 150 175 200

TA, AMBIENT TEMPERATURE (C)

Figure 8. Maximum Non−repetitive Surge

Power, Ppk versus PW

Figure 9. Maximum Non−repetitive Surge

Power, Ppk(NOM) versus PW

0.1 1 10 100 1000

100

PW, PULSE WIDTH (ms)

UNIDIRECTIONAL

RECTANGULAR

WAVEFORM, TA = 25C

BIDIRECTIONAL

Power is defined as VZ(NOM) x IZ(pk) where

VZ(NOM) is the nominal Zener voltage measured at

the low test current used for voltage classification.

PEAK PULSE DERATING IN % OF PEAK

POWER OR CURRENT @ TA = 25C

Ppk, PEAK SURGE POWER (W)

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

http://onsemi.com

TYPICAL COMMON ANODE APPLICATIONS

A quad junction common anode design in a SOT−23

package protects four separate lines using only one package.

This adds flexibility and creativity to PCB design especially

when board space is at a premium. Two simplified examples

of TVS applications are illustrated below.

MMBZ5V6ALT1G

THRU

MMBZ33VALT1G

KEYBOARD

TERMINAL

PRINTER

ETC.

FUNCTIONAL

DECODER

I/O

MMBZ5V6ALT1G

THRU

MMBZ33VALT1G

GND

Computer Interface Protection

Microprocessor Protection

I/O

RAM ROM

CLOCK

CPU

CONTROL BUS

ADDRESS BUS

DATA BUS

GND

VGG

VDD

MMBZ5V6ALT1G

THRU

MMBZ33VALT1G

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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USA/Canada

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Phone: 421 33 790 2910

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Phone: 81−3−5817−1050

MMBZ5V6ALT1/D

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