AO4821 12V Dual P-Channel MOSFET General Description Product Summary The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. ID (at VGS=-4.5V) VDS -12V -9A RDS(ON) (at VGS=-4.5V) < 19m RDS(ON) (at VGS =-2.5V) < 24m RDS(ON) (at VGS =-1.8V) < 30m 100% UIS Tested 100% Rg Tested SOIC-8 Top View D1 1 Bottom View D2 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 G1 D1 D1 Rg Rg G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: Nov 2010 Steady-State Steady-State A 2 W 1.28 TJ, TSTG Symbol t 10s V -60 PD TA=70C 8 -7 IDM TA=25C Units V -9 ID TA=70C Maximum -12 RJA RJL www.aosmd.com C -55 to 150 Typ 48 74 32 Max 62.5 90 40 Units C/W C/W C/W Page 1 of 5 AO4821 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -12 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.35 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -60 TJ=55C -5 VDS=0V, VGS= 8V 10 VGS=-4.5V, ID=-9A Static Drain-Source On-Resistance TJ=125C Gate Drain Charge Turn-On DelayTime tr Turn-On Rise Time -0.56 S -1 V -3 A 1390 1740 2100 pF 230 334 435 pF 120 200 280 pF VGS=0V, VDS=0V, f=1MHz 0.9 1.3 1.7 k 15 19 23 nC VGS=-4.5V, VDS=-6V, ID=-9A 3.6 4.5 5.4 nC 5.3 7.4 nC VGS=0V, VDS=-6V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge tD(on) m m DYNAMIC PARAMETERS Ciss Input Capacitance Qgd 27 45 IS=-1A,VGS=0V Gate Source Charge 22 m Maximum Body-Diode Continuous Current Qgs 19 30 Diode Forward Voltage Gate resistance 16 24 IS Rg V A 23 VSD Reverse Transfer Capacitance -0.85 A 19 VDS=-5V, ID=-9A Crss -0.53 A VGS=-2.5V, ID=-8A Forward Transconductance Output Capacitance Units VGS=-1.8V, ID=-6A gFS Coss Max V VDS=-12V, VGS=0V IDSS RDS(ON) Typ 3 VGS=-4.5V, VDS=-6V, RL=0.67, RGEN=3 240 ns 580 ns 7 s 4.2 s tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-9A, dI/dt=500A/s 18 22 26 Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/s 14 17 20 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Nov 2010 www.aosmd.com Page 2 of 5 AO4821 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 -4.5V -2.5V 50 VDS=-5V 50 -3V 40 40 -ID(A) -ID (A) -2V 30 20 30 20 125C VGS=-1.5V 10 0 0 0 1 2 3 4 5 0 0.5 1.5 2 2.5 3 1.6 30 Normalized On-Resistance VGS=-1.8V 25 RDS(ON) (m ) 1 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 20 VGS=-2.5V 15 VGS=-4.5V 10 ID=-8A, VGS=-2.5V 1.4 ID=-9A, VGS=-4.5V 1.2 ID=-6A, VGS=-1.8V 1 17 5 2 10 0.8 0 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 0 45 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1.0E+01 ID=-9A 40 1.0E+00 40 35 125C 25C 1.0E-01 -IS (A) RDS(ON) (m ) 25C 10 30 125C 25 1.0E-02 1.0E-03 20 1.0E-04 15 25C 10 0 2 4 1.0E-05 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Nov 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO4821 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4.5 2800 VDS=-6V ID=-9A 4 2400 Capacitance (pF) 3.5 -VGS (Volts) 3 2.5 2 1.5 Ciss 2000 1600 1200 Coss 800 1 400 0.5 0 Crss 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 2 4 6 8 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10000 100.0 10s RDS(ON) limited TA=25C 100 1000 Power (W) 10.0 -ID (Amps) 12 1ms 1.0 10ms DC 0.1 10s 100 10 TJ(Max)=150C TA=25C 0.0 1 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=90C/W 0.1 PD Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: Nov 2010 www.aosmd.com Page 4 of 5 AO4821 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 4: Nov 2010 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5