3White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32-XXX
Parameter Symbol Min Max Unit
Operating Temperature TA-55 +125 °C
Storage Temperature TSTG -65 +150 °C
Signal Voltage Relative to GND VG-0.5 Vcc+0.5 V
Junction Temperature TJ150 °C
Supply Voltage VCC -0.5 7.0 V
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.5 +0.8 V
Operating Temp (Mil) TA-55 +125 °C
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions Max Unit
OE capacitance COE
V
IN
= 0 V, f = 1.0 MHz
50 pF
WE1-4 capacitance CWE
V
IN
= 0 V, f = 1.0 MHz
pF
HIP (PGA) 20
CQFP G4T 5 0
CQFP G2T/G1U/G1T 20
CS1-4 capacitance CCS
V
IN
= 0 V, f = 1.0 MHz
20 pF
Data I/O capacitance CI/O
V
I/O
= 0 V, f = 1.0 MHz
20 pF
Address input capacitance CAD
V
IN
= 0 V, f = 1.0 MHz
50 pF
This parameter is guaranteed by design but not tested.
Parameter Symbol Conditions Units
Min Max
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 µA
Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA
Operating Supply Current x 32 Mode ICC x 32 CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 660 mA
Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 80 mA
Output Low Voltage VOL IOL = 8mA for 15 - 35ns, 0.4 V
IOL = 2.1mA for 45 - 55ns, Vcc = 4.5
Output High Voltage VOH IOH = -4.0mA for 15 - 35ns, 2.4 V
IOH = -1.0mA for 45 - 55ns, Vcc = 4.5
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DC CHARACTERISTICS
(VCC
= 5.0V, VSS = 0V, TA = -55°C to +125°C)
DATA RETENTION CHARACTERISTICS
(TA = -55°C to +125°C)
Parameter Symbol Conditions Units
Min Max
Data Retention Supply Voltage VDR CS £ VCC -0.2V 2.0 5.5 V
Data Retention Current ICCDR1 VCC = 3V 28 mA
Low Power Data Retention ICCDR2 VCC = 3V 16 mA
Current (WS512K32L-XXX)
CS OE WE Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L H H Out Disable High Z Active
L X L Write Data In Active