VS-ETX3007THN3
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Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
Hyper fast and soft recovery time
Low forward voltage drop
175 °C maximum operating junction temperature
Low leakage current
True 2 pin package
AEC-Q101 qualified
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Ultra low VF, soft-switching hyper fast rectifiers optimized
for discontinuous (critical) mode (DCM) power factor
correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRIMARY CHARACTERISTICS
IF(AV) 30 A
VR650 V
VF at IF at 125 °C 1.6 V
trr 27 ns
TJ max. 175 °C
Package 2L TO-220AC
Circuit configuration Single
Base cathode
2
13
Cathode Anode
1
3
2
3
2
2L TO-220AC
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage VRRM 650 V
Average rectified forward current IF(AV) TC = 120 °C 30 A
Non-repetitive peak surge current IFSM TC = 25 °C 210
Operating junction and storage temperature TJ, TStg -55 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage VBR,
VR
IR = 250 μA 650 - -
V
Forward voltage VF
IF = 30 A - 2.1 2.5
IF = 30 A, TJ = 125 °C - 1.6 1.7
Reverse leakage current IR
VR = VR rated - 0.02 30 μA
TJ = 150 °C, VR = VR rated - 50 300
Junction capacitance CTVR = 200 V - 22 - pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
VS-ETX3007THN3
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Revision: 06-Apr-18 2Document Number: 96066
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
TJ = 25 °C
IF = 1 A
dIF/dt = 100 A/μs
VR = 30 V
-35-
ns
TJ = 25 °C
IF = 30 A
dIF/dt = 1000 A/μs
VR = 400 V
-27-
TJ = 125 °C - 88 -
Peak recovery current IRRM
TJ = 25 °C - 15 - A
TJ = 125 °C - 24 -
Reverse recovery charge Qrr
TJ = 25 °C - 330 - nC
TJ = 125 °C - 1350 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction to case RthJC -1.01.3
°C/WThermal resistance, junction to ambient RthJA Typical socket mount - - 70
Thermal resistance, case to heat sink RthCS Mounting surface, flat, smooth, and greased - - 0.5
Weight -0.2- g
-0.07- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Maximum junction and storage
temperature range TJ, TStg -55 - 175 °C
Marking device Case style: 2L TO-220AC ETX3007TH
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5 3.0
IF- Instantaneous Forward Current (A)
VF- Forward Voltage Drop (V)
TJ= 25 °C
TJ= 175 °C
TJ= 150°C
0.001
0.01
0.1
1
10
100
1000
0 100200300400500600700
IRM (μA)
VR(V)
25 °C
150 °C
175 °C
VS-ETX3007THN3
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Revision: 06-Apr-18 3Document Number: 96066
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10
100
1000
0 100 200 300 400 500 600 700
CT- Junction Capacitance (pF)
VR- Reverse Voltage (V)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
70
80
90
100
110
120
130
140
150
160
170
180
0 1020304050
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
Square wave (D = 0.50)
rated VRapplied
DC
0
10
20
30
40
50
60
70
80
0 1020304050
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
VS-ETX3007THN3
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Revision: 06-Apr-18 4Document Number: 96066
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Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 9 - Reverse Recovery Waveform and Definitions
20
30
40
50
60
70
80
90
100
110
120
130
100 1000
trr (ns)
dIF/dt (A/μs)
125 °C
25 °C
0
200
400
600
800
1000
1200
1400
100 1000
Qrr (nC)
dIF/dt (A/μs)
125 °C
25 °C
VS-ETX3007THN3
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Revision: 06-Apr-18 5Document Number: 96066
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-ETX3007THN3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96069
Part marking information www.vishay.com/doc?95391
SPICE model www.vishay.com/doc?96532
2
- Current rating (30 = 30 A)
3
- E = single diode
4
- Package:
T = TO-220
5
- X = hyper fast recovery
6- Voltage rating (07 = 650 V)
8- H = AEC-Q101 qualified
7-
1- Vishay Semiconductors product
9
Device code
51 32 4 6 7
VS- E T X 30 07 T
9
N3
- Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
8
H
T = True 2 pin TO-220
Outline Dimensions
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Revision: 06-Dec-17 1Document Number: 96069
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2L TO-220AC
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except D2, where JEDEC® minimum is 0.480".
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 Ø P 3.54 3.73 0.139 0.147
c1 0.36 0.56 0.014 0.022 4 Q 2.60 3.00 0.102 0.118
D 14.85 15.25 0.585 0.600 3
D1 8.38 9.02 0.330 0.355
D2 11.68 12.88 0.460 0.507 6
E 10.11 10.51 0.398 0.414 3, 6
12
D
D1
L1
H1
Q
C
A
B
L
e1
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
(6)
(6)
(2)
(7)
(6)
(7)
View A - A
E1 (6)
D2 (6)
H1
Thermal pad
E
12
C
C
DD
2 x b22 x b
L1 (2)
Detail B
Detail B
(b, b2)
b1, b3
Section C - C and D - D
Base metal Plating
(4)
(4)
c1
c
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