TLN233(F)
2007-10-01
1
TOSHIBA Infrared LED GaAℓAs Infrared Emitter
TLN233(F)
Infrared LED for Space-Optical-Transmission
• High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA
• Half-angle value: θ1/2 = ±13° (typ.)
• A light source for remote control
• Wireless AV-signal transmission purposes
• High-speed data transmission purposes
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Forward current IF 100 mA
Pulse forward current IFP 1000
(Note 1) mA
Power dissipation PD 200 mW
Reverse voltage VR 4 V
Operating temperature range Topr −25~85 °C
Storage temperature range Tstg −30~100 °C
Soldering temperature (5 s), (Note 2) Tsol 260 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: f = 100 kHz, duty = 1%
Note 2: Soldering must be performed under the stopper.
Unit: mm
TOSHIBA 4-5V3
Weight: 0.3 g (typ.)
Pin Connection
12
1. Anode
2. Cathode
TLN233(F)
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Optical and Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = 100 mA ⎯ 1.6 2.0 V
Reverse current IR V
R = 4 V ⎯ ⎯ 60 μA
Radiant intensity IE I
F = 50 mA 46 80 ⎯ mW/sr
Radiant power PO I
F = 50 mA ⎯ 30 ⎯ mW
Cut-off frequency fc I
F = 50 mA + 5 mAP-P (Note 3) ⎯ 15 ⎯ MHz
Peak emission wavelength λP I
F = 50 mA ⎯ 870 ⎯ nm
Half-angle value θ2
1 IF = 50 mA ⎯ ±13 ⎯ °
Note 3: This is the frequency when modulation light power decreases by 3 dB from 1 MHz.
Handling Precautions
• Soldering must be performed under the stopper.
• When forming the leads, bend each lead at least 5 mm from the package body. Soldering must be performed
after the leads have been formed.
• The radiant intensity decreases over time due to current flowing in the infrared LED. When designing circuits,
take into account the change in radiant intensity over time. The change in radiant intensity is equal to the
reciprocal of the change in LED infrared optical output:
P(0) o
P(t) o
I(0) E
I(t) E =.
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2007-10-01
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Allowable pulse forward current IFP (mA)
Pulse forward current IFP (mA)
Ambient temperature Ta (°C)
IF – Ta
Allowable forward current IF (mA)
Forward voltage VF (V)
I
F – VF (typ.)
Forward current IF (mA)
Ambient temperature Ta (°C)
V
F – Ta (typ.)
Forward voltage VF (V)
Pulse forward voltage VFP (V)
I
FP – VFP (typ.)
Pulse width Pw (μs)
IFP – Pw
Pulse forward current IFP (mA)
Relative IE – IFP
Relative radiant intensity
0
0 20 40 60 80 100
20
40
60
80
100
120
0.01
0.8 1 1.2 1.4 1.6 1.8 2
0.1
1
10
100
−25°C
0°C
Ta = 25°C
50°C
75°C
85°C
1
−50 −25 0 25 50 75 100
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IF = 10 mA
30 mA
50 mA
70 mA
100 mA
1
0 1 2 3 4 5
3
10
100
30
1000
300
Pulse width
<
=
100 μs
Repetitive frequency = 100 Hz
Ta = 25°C
10
1 10 100 1000 10000
100
1000
10000
30
300
3000
Ta = 25°C
f = 100 Hz
200 Hz
500 Hz
1 kHz
2 kHz
5 kHz
10 kHz
0
0 200 400 600 800 1000 1200
0.2
0.4
0.6
0.8
1.0
1.2
Pulse width = 1 ms
Duty = 10%
Ta = 25°C
TLN233(F)
2007-10-01
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30°
0°
60°
90°
90°
30°
60°
0 1.0
80°
70°
50°
40°
20°
10°
70°
50°
40°
20° 10°
0.80.6 0.4 0.2
Relative radiant power
Ta = 25°C
80°
Wavelength λ (nm)
Wavelength characteristic
Relative power intensity
Ambient temperature Ta (°C)
Relative IE – Ta (typ.)
Relative radiant intensity
Radiation pattern (typ.)
0
700 740 780 820 860 900 940 980
0.2
0.4
0.6
0.8
1
IF = 50 mA
0.1
−50 −25 0 25 50 75 100
1
10
0.3
3
IF = 50 mA
TLN233(F)
2007-10-01
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