DATE NAME DRAWN 07- Feb - 08 T.Nishimura CHECKED 07- Feb - 08 S.Miyashita CHECKED 07- Feb - 08 J.Komatsu T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Specification (600A/1200V-2in1 IGBT-Module) Device Name : IGBT-Module Type Name : 2MBI600U4G-120 Spec. No. : MS5F07031 Fuji Electric Device Technology Co.,Ltd. Matsumoto Factory APPROVAL MS5F07031 1 14 H04-004-007 Date Classifi cation 07- Feb- 08 enactment - - - - - - - - - - - - - - - - - - - DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Revised Recor ds Ind. Content Applied date Drawn Checked Checked Approved Issued data S.Miyashita J.Komatsu T.Miyasaka MS5F07031 2 14 H04-004-006 main emitter main collector DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Type Name : 2MBI600U4G-120 PKG.No. M256 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit main collector sense emitter sense collector gate gate sense collector sense emitter main emitter MS5F07031 3 14 H04-004-003 3.Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES Ic Collector current Icp Conditions Continuous 1ms Maximum Ratings Units 1200 V 20 V 800 Tc=25C Tc=80C 600 Tc=25C 1600 Tc=80C 1200 -Ic -Ic pulse 600 1ms 1200 1 device 3670 Collector Power Dissipation Pc Junction temperature Tj 150 Storage temperature Tstg -40 ~ +125 Isolation voltage Viso between terminal and copper base *1 Screw Torque *2 AC : 1min. W C 2500 Mounting 5.75 Main Terminals 10 Sense Terminals 2.5 VAC Nm (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6) Main Terminals 8~10 Nm (M8) Sense Terminals 1.7~2.5 Nm (M4) 4. Electrical characteristics ( at Tj= 25C unless otherwise specified) Items Symbols Zero gate voltage Collector current ICES Gate-Emitter leakage current IGES Gate-Emitter threshold voltage VGE(th) VCE(sat) Collector-Emitter saturation voltage (main terminal) VCE(sat) (chip) Input capacitance Turn-on Turn-off Cies ton tr Lead resistance, terminal-chip * (*) - - 1.0 mA - - 1200 nA 5.5 6.5 7.5 V Tj= 25C - 2.08 2.26 Tj=125C - 2.28 - Tj= 25C - 1.90 2.05 VCE = 1200V VCE = 0V VGE=20V VCE = 20V Ic = 600mA VGE=15V Ic = 600A Tj=125C - 2.10 - VCE=10V,VGE=0V,f=1MHz - 68 - Vcc = 600V - 1.35 - - 0.65 - Ic = 600A VGE=15V,Tj=125 V nF s Rgon = 6.8 - 0.80 - tf Rgoff = 2 Tj= 25C Tj=125C - 0.20 1.83 1.93 2.01 - Tj= 25C - 1.65 1.80 Tj=125C - 1.75 - - 0.45 - s - 0.29 - m (main terminal) VF (chip) Reverse recovery VGE = 0V Units toff VF Forward on voltage Char acter istics min. typ. max. Conditions trr VGE=0V IF = 600A IF = 600A R lead V Biggest internal terminal resistance among arm. DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. A MS5F07031 4 14 H04-004-003 5. Thermal resistance characteristics Items Symbols Thermal resistance(1device) Rth(j-c) Contact Thermal resistance(1device) Rth(c-f) Char acter istics min. typ. max. Conditions IGBT - - 0.034 FWD - - 0.060 with Thermal Compound (*) - 0.006 - Units C/W * This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module Typ.Name Rating Lot No. for Fuji Display (16 DIGITS) Place of manufucturing This specification is applied to IGBT Module named 2MBI600U4G-120 . 8.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35C and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 90% 0V 0V V GE L tr r Ir r VCE Vcc RG 0V 0A V CE Ic 10% 10% tr ( i ) V GE Ic Ic 90% tr 90% 10% VCE tf to f f to n 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 7.Applicable category MS5F07031 5 14 H04-004-003 11.Reliability test results Reliability Test Items Test items (Aug.-2001 edition) Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Environment Tests This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Reference AcceptNumber norms ance EIAJ ED-4701 of sample number Test methods and conditions 5 Temperature Cycle Pull force Test time Screw torque : 40N : 101 sec. : 1.8 ~ 2.1 N*m (M4) 4.25 ~ 5.75 N*m (M6) 8.0~ 10.0 N*m (M8) Test time : 101 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s 2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 1000m/s 2 Pulse width : 6.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 1255 Test duration : 1000hr. Storage temp. : -405 Test duration : 1000hr. Storage temp. : 852 Relative humidity : 855% Test duration : 1000hr. Test temp. : 1202 Test humidity : 855% Test duration : 96hr. Test temp. : 5 (0:1) 5 (0:1) 5 (0:1) 5 (0:1) Test Method 201 5 (0:1) Test Method 202 5 (0:1) Test Method 103 5 (0:1) 5 (0:1) Test Method 105 5 (0:1) Test Method 307 5 (0:1) Test Method 401 Method Test Method 402 Method Test Method 403 Reference 1 Condition code B Test Method 404 Condition code A Test code C Test Method 103 Test code E Low temp. -405 High temp. 125 5 Number of cycles RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles Test temp. : Dwell time 6 Thermal Shock High temp. 100 +0 -5 Method Condition code A +5 -0 Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles DWG.No. Test categories MS5F07031 6 14 H04-004-003 Reliability Test Items Test items (Aug.-2001 edition) 1 High temperature Reverse Bias Test temp. EnduranceEndurance Tests Tests Test duration 2 High temperature Bias (for gate) Test temp. Test duration : Ta = 1255 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. Test temp. Relative humidity Bias Voltage Bias Method : : : : Test duration ON time OFF time Test temp. : : : : Number of cycles : Bias Voltage Bias Method 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 101 5 (0:1) Test Method 101 5 (0:1) Test Method 102 5 (0:1) 5 (0:1) : Ta = 1255 (Tj 150 ) : VC = 0.8xVCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Bias Voltage Bias Method This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Reference AcceptNumber norms ance EIAJ ED-4701 of sample number Test methods and conditions 852 oC 855% VC = 0.8xVCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=1005 deg Tj 150 , Ta=255 15000 cycles Condition code C Test Method 106 Failure Criteria Item Electrical characteristic Characteristic Leakage current Symbol - USLx2 USLx2 mA A Gate threshold voltage VGE(th) LSLx0.8 USLx1.2 mA Saturation voltage VCE(sat) - USLx1.2 V - USLx1.2 USLx1.2 V mV - USLx1.2 mV resistance VF VGE or FWD Isolation voltage inspection Unit ICES IGES Forward voltage Thermal IGBT Visual Failure criteria Lower limit Upper limit Note VCE VF Viso Broken insulation - - The visual sample - Visual inspection Peeling Plating and the others LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. DWG.No. Test categories MS5F07031 7 14 H04-004-003 Reliability Test Items Test categories Test items Environment Tests Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock Number of test sample Number of failure sample Test Method 401 Method 5 0 5 0 5 0 5 0 Test Method 402 Method Test Method 403 Condition code B Test Method 404 Condition code B 1 High Temperature Storage Test Method 201 5 0 2 Low Temperature Storage Test Method 202 5 0 Temperature Humidity Test Method 103 5 0 5 0 5 0 5 0 Test Method 101 5 0 Test Method 101 5 0 5 0 5 0 3 4 Storage Unsaturated Pressurized Vapor 5 Temperature Cycle Test code C Test Method 103 Test code E Test Method 105 Test Method 307 6 Thermal Shock method Condition code A 2 High temperature Reverse Bias High temperature Bias ( for gate ) 3 Temperature Humidity Bias Intermitted Operating Life 4 ( Power cycling ) ( for IGBT ) Test Method 102 Condition code C Test Method 106 DWG.No. 1 Endurance Tests This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. Mechanical Tests 1 Reference norms EIAJ ED-4701 (Aug.-2001 edition) MS5F07031 8 14 H04-004-003 Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C, chip Tj=25,chip 1400 1400 12V 1000 800 10V 600 400 12V 1000 800 10V 600 400 8V 8V 0 0.0 1.0 2.0 3.0 4.0 0 0.0 5.0 1.0 3.0 4.0 5.0 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=+15V,chip Tj=25,chip 1400 10 Tj=125C Collector - Emitter voltage : VCE [ V ] Tj=25C 1200 Collector current : Ic [A] 2.0 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 1000 800 600 400 200 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 8 6 4 Ic=1200A Ic=600A Ic=300A 2 0 4.0 5 10 Collector-Emitter voltage : VCE [V] 15 20 Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25C Tj= 25C 1000 Collector-Emitter voltage:VCE[V] Cies 100 10 Cres Coes 25 800 20 VGE VCE 600 15 400 10 200 5 0 1 10 20 30 0 500 1000 1500 2000 2500 0 3000 Gate charge : Qg [ nC ] Collector-Emitter voltage : VCE [V] DWG.No. 0 25 Gate - Emitter voltage : VGE [ V ] 1000 Capacitance : Cies, Coes, Cres [ nF ] 15V 200 200 This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. VGE=20 1200 Gate-Emitter voltage:VGE[V] Collector current : Ic [A] 1200 15V Collector current : Ic [A] VGE=20 MS5F07031 9 14 H04-004-003 Switching time vs. Collector current (typ.) Switching time vs. Gate resistance (typ.) Vcc=600V, VGE=15V, Rgon=6.8, Rgoff=2, Tj= 25C Vcc=600V, Ic=600A,VGE=15V, Tj= 25C 6.0 Switching time : ton, tr, toff, tf [ us ] Switching time : ton, tr, toff, tf [ us ] 1.8 1.6 1.4 1.2 ton 1.0 toff 0.8 0.6 0.4 tf 0.2 4.0 3.0 tr 2.0 toff 1.0 0.0 200 400 600 800 0 1000 4 8 16 20 24 28 32 Switching loss vs. Collector current (typ.) Switching loss vs. Gate resistance (typ.) Vcc=600V, VGE=15V, Rgon=6.8, Rgoff=2, Tj= 25C Vcc=600V, Ic=600A,VGE=15V, Tj= 25C 225 Eoff 200 175 150 125 Eon 100 75 Err 50 25 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 250 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 12 36 Gate resistance : Rg [ ] Collector current : Ic [ A ] 500 Eon 450 400 350 300 250 Eoff 200 150 100 Err 50 0 0 0 200 400 600 800 1000 Collector current : Ic [ A ] , Forward current : IF [ A ] 0 4 8 12 16 20 24 28 Gate resistance : Rg [ ] 32 36 Reverse bias safe operating area (max.) VGE=15V ,Tj = 125C / chip 1400 1200 1000 800 600 400 200 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage : VCE [ V ] DWG.No. Collector current : Ic [ A ] This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 5.0 tf tr 0.0 0 ton MS5F07031 10 14 H04-004-003 Forward current : IF [ A ] 1200 0.001 0.001 Tj=25 0.5 1.0 0.010 1.5 2.0 Tj=125 1000 800 600 400 200 2.5 0.100 0.100 3.0 Reverse recovery current : Irr [ A ] Reverse recovery characteristics (typ.) chip Vcc=600V, VGE=15V, Rg=6.8, Tj=125 450 3.5 400 Irr 350 0.7 300 250 trr 0.6 0 0 200 Forward on voltage : VF [ V ] 400 600 800 Forward current : IF [ A ] MS5F07031 11 0.5 200 0.4 150 0.3 100 0.2 50 0.1 Reverse recovery time : trr [us] 1400 DWG.No. Thermal resistanse : Rth(j-c) [ C/W ] This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. 0 0.0 Forward current vs. Forward on voltage (typ.) 0.9 0.8 0.0 1000 Transient thermal resistance (max.) 1.000 FWD IGBT 0.010 1.000 Pulse width : Pw [ sec ] 14 H04-004-003 Warnings - This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. - Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment from causing secondary destruction, such as fire, its spreading, or explosion. - Use this product after realizing enough working on environment and considering of product's reliability life. This product may be broken before target life of the system in case of using beyond the product's reliability life. - Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down of case temperature (Tc), and depends on cooling design of equipment which use this product. In application which has such frequent rise and down of Tc, well consideration of product life time is necessary. (No.: MT5F12959)Tj Tc(Tc) - Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor contact problem. - Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will be worse and over heat destruction may occur. 100mm100um10um - In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the thermal compound amount was not enough or its applying method was not suitable, its spreading will not be enough, then, thermal conductivity will be worse and thermal run away destruction may occur. Confirm spreading state of the thermal compound when its applying to this product. (Spreading state of the thermal compound can be confirmed by removing this product after mounting.) () - It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA specification. This product may be broken if the locus is out of the RBSOA. RBSOARBSOA DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. - If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide, sulfurous acid gas), the product's performance and appearance can not be ensured easily. MS5F07031 12 14 H04-004-003 Warnings - If excessive static electricity is applied to the control terminals, the devices may be broken. Implement some countermeasures against static electricity. - Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. - In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent this malfunction. (Recommended value : -VGE = -15V) -VGE-VGE : -VGE = -15V) - This product may be broken by avalanche in case of VCE beyond maximum rating VCES is applied between C-E terminals. Use this product within its absolute maximum voltage. VCESVCE DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. - In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT may occur. Use this product in the most suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction. dv/dt +VGE, -VGE, RG MS5F07031 13 14 H04-004-003 Cautions - Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability. However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. - The product described in this specification is not designed nor made for being applied to the equipment or systems used under life-threatening situations. When you consider applying the product of this specification to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices, atomic control systems and submarine relaying equipment or systems, please apply after confirmation of this product to be satisfied about system construction and required reliability. If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd. DWG.No. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Device Technology Co.,Ltd. - The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. MS5F07031 14 14 H04-004-003