MCC 250 MCD 250 ITRMS = 2x 450 A ITAVM = 2x 287 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules 3 VRSM VDSM VRRM VDRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 1 Version 1 Version 1 MCC 250-08io1 MCC 250-12io1 MCC 250-14io1 MCC 250-16io1 MCC 250-18io1 MCD 250-08io1 MCD 250-12io1 MCD 250-14io1 MCD 250-16io1 Symbol Test Conditions ITRMS, IFRMS ITAVM, IFAVM TVJ = TVJM TC = 85C; 180 sine ITSM, IFSM TVJ = 45C; VR = 0 oi2dt (di/dt)cr 7 6 2 Maximum Ratings 450 287 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9000 9600 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7800 8500 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 405 000 380 000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 304 000 300 000 A2s A2s 100 A/ms TVJ = TVJM repetitive, IT = 860 A f =50 Hz, tP =200 ms VD = 2/3 VDRM IG = 1 A non repetitive, IT = 290 A diG/dt = 1 A/ms 1000 V/ms PGAV 120 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40...+140 140 -40...+125 C C C 3000 3600 V~ V~ PGM TVJ = TVJM IT = ITAVM 50/60 Hz, RMS IISOL 1 mA Md Mounting torque (M5) Terminal connection torque (M8) Weight Typical including screws 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches tP = 30 ms tP = 500 ms VISOL 3 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) 4 800 (dv/dt)cr 5 t = 1 min t=1s Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits 2.5-5/22-44 Nm/lb.in. 12-15/106-132 Nm/lb.in. 320 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved 1-4 http://store.iiic.cc/ MCC 250 MCD 250 Symbol Test Conditions IRRM IDRM TVJ = TVJM; VR = VRRM; VD = VDRM VT, VF IT, IF = 600 A; TVJ = 25C 1.36 V VT0 rT For power-loss calculations only (TVJ = 140C) 0.85 0.82 V mW VGT VD = 6 V; IGT VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 2 3 150 200 V V mA mA VGD IGD TVJ = TVJM; VD = 2/3 VDRM 0.25 10 V mA IL TVJ = 25C; tP = 30 ms; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/ms 200 mA IH TVJ = 25C; VD = 6 V; RGK = 150 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 1 A; diG/dt = 1 A/ms 2 ms tq TVJ = TVJM; IT = 300 A, tP = 200 ms; -di/dt = 10 A/ms typ. VR = 100 V; dv/dt = 50 V/ms; VD = 2/3 VDRM 200 ms QS IRM TVJ = 125C; IT, IF = 400 A, -di/dt = 50 A/ms 760 275 mC A RthJC per per per per RthJK dS dA a Characteristic Values thyristor/diode; DC current module thyristor/diode; DC current module 70 40 other values see Fig. 8/9 mA mA 0.129 0.0645 0.169 0.0845 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 Creepage distance on surface Strike distance through air Maximum allowable acceleration Fig. 1 Gate trigger characteristics Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass MCD 20 12 14 (c) 2000 IXYS All rights reserved 2-4 http://store.iiic.cc/ MCC 250 MCD 250 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 oi2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature (c) 2000 IXYS All rights reserved 3-4 http://store.iiic.cc/ MCC 250 MCD 250 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 0.15 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 30 DC K/W ZthJC RthJC for various conduction angles d: 0.10 0.05 d RthJC (K/W) DC 180C 120C 60C 30C 0.129 0.131 0.131 0.132 0.132 Constants for ZthJC calculation: i 0.00 10-3 10-2 10-1 100 101 102 s t 0.20 ti (s) 0.0035 0.0165 0.1091 0.099 0.168 0.456 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) K/W 30 DC ZthJK 1 2 3 Rthi (K/W) RthJK for various conduction angles d: 0.15 0.10 d RthJK (K/W) DC 180C 120C 60C 30C 0.169 0.171 0.172 0.172 0.173 0.05 Constants for ZthJK calculation: i 0.00 10-3 10-2 10-1 100 101 s t 102 1 2 3 4 Rthi (K/W) ti (s) 0.0033 0.0159 0.1053 0.04 0.099 0.168 0.456 1.36 835 (c) 2000 IXYS All rights reserved 4-4 http://store.iiic.cc/