IL766-1 - Infineon Technologies



2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–159 March 1, 2000-01

FEATURES

• Internal R

BE

for Better Stability

• High Current Transfer Ratios,

V

CE

=5.0

V

IL/ILD766-1: 500% at

I

F

=2.0 mA

IL/ILD766-2: 500% at

I

F

=1.0 mA

•BV

CEO

>60 V

• AC or Polarity Insensitive Inputs

• Built-In Reverse Polarity Input

Protection

• Industry Standard DIP Package

• Underwriters Lab File #E52744

DESCRIPTION

The IL/ILD766 are bidirectional input optically cou-

pled isolators. They consist of two Gallium Ars-

enide infrared emitting diodes coupled to a silicon

NPN photodarlington per channel.

The IL766 are single channel optocouplers. The

ILD766 has two isolated channels in a single DIP

package. They are designed for applications

requiring detection or monitoring of AC

signals.

Maximum Ratings

Emitter

(Each Channel)

Continuous Forward Current.........................60 mA

Power Dissipation at 25

°

C

Single Channel ....................................... 200 mW

Dual Channel............................................ 90 mW

Derate Linearly from 25

°

C

Single Channel ................................... 2.6 mW/

°

C

Dual Channel...................................... 1.2 mW/

°

C

Detector

(Each Channel)

Collector-Emitter Breakdown Voltage ............. 60 V

Collector-Base Breakdown Voltage ................ 70 V

Power Dissipation at 25

°

C ......................... 100 mW

Derate Linearly from 25

°

C .................. 1.33 mW/

°

C

Package

Isolation Test Voltage

(t=1.0 sec.) .......................................... 5300 V

RMS

Isolation Resistance

T

A

=25

°

C .................................................

≥

10

12

Ω

T

A

=100

°

C ...............................................

≥

10

11

Ω

Total Power Dissipation at

T

A

=25

°

C

(LED Plus Detector)

Single Channel ....................................... 250 mW

Dual Channel.......................................... 400 mW

Derate Linearly from 25

°

C

Single Channel ................................... 3.3 mW/

°

C

Dual Channel .................................... 5.3 mW/

°

C

Creepage.................................................

≥

7.0 mm

Clearance ................................................

≥

7.0 mm

Comparative Tracking Index per

DIN IEC 112/VDE303, part 1 ......................... 175

Storage Temperature ................... –55

°

C to +150

°

C

Operating Temperature................ –55

°

C to +100

°

C

Lead Soldering Time at 260

°

C.................... 10 sec.

SINGLE CHANNEL

IL766

DUAL CHANNEL

ILD766

Bidirectional Input

Darlington Optocoupler

Electrical Characteristics

T

A

=25

°

C

Parameter Sym Min Typ Max Unit Condition

Emitter

Forward Voltage

V

F

— 1.2 1.5 V

I

F

=

±

10 mA

Detector

Breakdown Voltage,

Collector-Emitter

Collector-Base

BV

CEO

BV

CBO

60

75

90

—

V

I

C

=1.0 mA

I

C

=10

µ

A

Leakage Current,

Collector-Emitter

I

CEO

— 10 100 nA

V

CE

=10 V

Package

Saturation Voltage,

Collector-Emitter

V

CE

sat

— — 1.0 V

I

F

=

±

10 mA

I

C

=10 mA

DC Current Transfer Ratio

IL766/ILD766-1

IL766-2

CTR

500

——

%

V

CE

=5.0 V

I

F

=

±

2.0 mA

I

F

=

±

1.0 mA

Rise Time, Fall Time — — 100 —

µ

s

V

CC

=10 V

I

F

=

±

2.0 mA

R

L

=100

Ω

pin one ID

.255 (6.48)

.268 (6.81)

.379 (9.63)

.390 (9.91)

.030 (0.76)

.045 (1.14)

4° typ.

.100 (2.54) typ.

10°

3°–9°

.300 (7.62)

typ.

.018 (.46)

.022 (.56) .008 (.20)

.012 (.30)

.110 (2.79)

.130 (3.30)

.150 (3.81)

.020 (.51 )

.035 (.89 )

.230(5.84)

.250(6.35)

4321

.031 (0.79)

.050 (1.27)

5678

8

7

6

5

Emitter

Collector

Emitter

Anode

Cathode

Anode

1

2

3

4

.010 (.25)

typ.

.114 (2.90)

.130 (3.0)

.130 (3.30)

.150 (3.81)

.031 (0.80) min.

.300 (7.62)

typ.

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

.039

(1.00)

Min.

.018 (0.45)

.022 (0.55)

.048 (0.45)

.022 (0.55)

.248 (6.30)

.256 (6.50)

.335 (8.50)

.343 (8.70)

pin one ID

6

5

4

12

3

18°

3°–9°

.300–.347

(7.62–8.81)

4°

typ.

1

2

3

6

5

4

Base

Collector

Emitter

Anode/

Cathode

Cathode/

Anode

NC

Dimensions in inches (mm)

Dual Channel

Single Channel



2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD766

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–160 March 1, 2000-01

Figure 1. Input characteristics

Figure 2. Transistor current versus voltage

Figure 3. Transistor output current versus voltage

Figure 4.

I

CEO

at

V

CE

=10 V versus temperature

Figure 5. Normalized CTR versus forward current

Figure 6.

t

r

versus forward current

NCTRce - Normalized CTR

.1 1 10 100

10

1

.1

.01

IF - LED Current - mA

VCE = 1 V

VCE = 5 V

Normalized @

IF = 10 mA

TA = 25°C

Trise (µs)

110

30

20

10

.0

IF - LED Current - mA

RL = 1k

RL = 10k



2001 Inﬁneon Technologies Corp. • Optoelectronics Division • San Jose, CA IL/ILD766

www.inﬁneon.com/opto • 1-888-Inﬁneon (1-888-463-4636)

2–161 March 1, 2000-01

Figure 10.

t

off

versus forward current

Figure 11. t

phl

versus forward current

Figure 12. t

plh

versus forward current

Toff (µs)

110

700

600

500

400

300

200

100

0

IF - LED Current - mA

RL = 1k

RL = 10k

Ton (µs)

110

30

20

10

0

IF - LED Current - mA

RL = 1k

RL = 10k

Tplh (µs)

110

400

300

200

100

0

IF - LED Current - mA

RL = 10k

RL = 1k

Figure 7. Saturated switching characteristics

measurements—schematic and waveform

Figure 8.

t

fall

versus forward current

Figure 9.

t

on

versus forward current

VO

RL

VCC=10 V

F=10 KHz,

DF=50%

IF=2 mA

IF

tR

VO

tD

tStF

tPHL

tPLH

VTH=1.5 V

Tfall (µs)

110

600

500

400

300

200

100

0

IF - LED Current - mA

RL = 1k

RL = 10k

Tphl (µs)

110

20

10

0

IF - LED Current - mA

RL = 1k

RL = 10k