RECTRON
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
2SD596
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Emitter cut-off current (VEB= 5V, IC=0)
DC current gain (VCE= 1V, IC= 100mA)
DC current gain (VCE= 1V, IC= 700mA)
Collector cut-off current (VCB= 30V, IE=0)
Collector-emitter saturation voltage (IC= 700mA, IB= 70mA)
Base-emitter voltage (VCE= 6V, IC= 10mA)
Transition frequency (VCE= 6V, IC= 10mA)
CHARACTERISTICS SYMBOL UNITS
-
-
-
-
-
-
-
-
-
-
-
-
0.1
-
-
-
400
mA
mA
V
V
V
V
V
MHz
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 100mA, IC=0)
CLASSIFICATION OF hFE
Pulse teat: Pulse width <350ms, Duty Cycle <2%.
RANK
Range
DV1
110-180 135-220
V(BR)CBO
V(BR)CEO
V(BR)EBO
IEBO
hFE(1)
hFE(2)
ICBO
VBE(on)
VCE(sat)
fT
TYP MAX
30
25
5
-
50
0.7
-140
-
0.6
110
MIN
DV5
DV2
200-320
DV4
170-270
DV3
250-400
0.055(1.40)
0.047(1.20)
-0.1
0.6
-
BASE
EMITTER
COLLECTOR
*
*
*
*
Power dissipation
PCM : 0.2 W (Tamb=25OC)
Collector current
ICM : 0.7 A
Collector-base voltage
V(BR)CBO : 30 V
Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
1
1
2
3
2
3
*
*
*
*
*
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.