MBRS140T3/D - ON Semiconductor

1Rectifier Device Data

Surface Mount

Schottky Power Rectifier

. . . employing the Schottky Barrier principle in a large area metal–to–silicon

power diode. State–of–the–art geometry features epitaxial construction with

oxide passivation and metal overlay contact. Ideally suited for low voltage, high

frequency rectification, or as free wheeling and polarity protection diodes in

surface mount applications where compact size and weight are critical to the

system.

•Small Compact Surface Mountable Package with J–Bend Leads

•Rectangular Package for Automated Handling

•Highly Stable Oxide Passivated Junction

•Very Low Forward Voltage Drop (0.55 Volts Max @ 1.0 A, TJ = 25°C)

•Excellent Ability to Withstand Reverse Avalanche Energy Transients

•Guardring for Stress Protection

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 95 mg (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C

Max. for 10 Seconds

•Shipped in 12 mm Tape and Reel, 2500 units per reel

•Cathode Polarity Band

•Marking: B14

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

40 Volts

Average Rectified Forward Current TL = 115°C IF(AV) 1.0 Amps

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 Amps

Operating Junction Temperature TJ– 65 to +125 °C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Lead

(TL = 25°C) RθJL 12 °C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (1)

(iF = 1.0 A, TJ = 25°C) VF0.6 Volts

Maximum Instantaneous Reverse Current (1)

(Rated dc Voltage, TJ = 25°C)

(Rated dc Voltage, TJ = 100°C)

iR1.0

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

 Motorola, Inc. 1999

Order this document

by MBRS140T3/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MBRS140T3

SCHOTTKY BARRIER

RECTIFIERS

1.0 AMPERE

40 VOLTS

CASE 403A–03

SMB

Motorola Preferred Device

Rev 3

MBRS140T3

2Rectifier Device Data

iF, INSTANT ANEOUS FOR WARD CURRENT (AMPS)

0.5

0.2

0.1

0.05

0.03

0.02 10.1 0.2 0.3 0.4 0.5 0.6 0.7

vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

Figure 1. Typical Forward Voltage

IR, REVERSE CURRENT (mA)

100

0.1

0.01 0 4 8 1216202428323640

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Typical Reverse Current

TJ = 125°C

25°C

IF(AV),

VER

RD CURRENT (

MPS)

050 60 70 80 90 100 110 120 130

TC, CASE TEMPERATURE (°C)

SQUARE WAVE DC

TJ = 125°C

PF(AV), AVERAGE POWER DISSIPATION (WATTS)

0012345

IF(AV), A VERAGE FOR W ARD CURRENT (AMPS)

IPK

IAV =

SQUARE

WAVE

RATED VOLTAGE APPLIED

RθJC = 12°C/W

TJ = 125°C

C, CAPACITANCE (pF)

160

140

120

100

00 4 8121620242832

VR, REVERSE VOLTAGE (VOLTS)

0.2

0.02

0.3

0.03

0.5

0.05

36 40

180

200

4030

CAPACITANCE

LOAD

0.7

0.07

0.3

0.8 0.9 1.1

TC = 100°C

TC = 25°C

100°C

75°C

NOTE: TYPICAL CAPACITANCE

AT 0 V = 160 pF

Figure 3. Typical Capacitance

Figure 4. Current Derating (Case) Figure 5. Power Dissipation

MBRS140T3

3Rectifier Device Data

PACKAGE DIMENSIONS

CASE 403A–03

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. D DIMENSION SHALL BE MEASURED WITHIN

DIMENSION P.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.160 0.180 4.06 4.57

B0.130 0.150 3.30 3.81

C0.075 0.095 1.90 2.41

D0.077 0.083 1.96 2.11

H0.0020 0.0060 0.051 0.152

J0.006 0.012 0.15 0.30

K0.030 0.050 0.76 1.27

P0.020 REF 0.51 REF

S0.205 0.220 5.21 5.59

MBRS140T3

4Rectifier Device Data

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MBRS140T3/D

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