DSA60C150PB Schottky Diode Gen VRRM = 150 V I FAV = 2x 30 A VF = 0.8 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA60C150PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c DSA60C150PB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 150 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 150 V IR reverse current, drain current VR = 150 V TVJ = 25C 450 A VR = 150 V TVJ = 125C 5 mA TVJ = 25C 0.93 V 1.09 V 0.80 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 125 C TC = 150C rectangular 0.98 V T VJ = 175 C 30 A TVJ = 175 C 0.55 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 6 m 0.85 K/W K/W 0.50 TC = 25C 12 V f = 1 MHz 175 390 289 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131031c DSA60C150PB Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C 1) Weight 2 MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part number D S A 60 C 150 PB XXXXXX Logo Assembly Line Lot # g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) Zyyww abcdef Date Code Ordering Standard Part Number DSA60C150PB Similar Part DSA50C150HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA60C150PB Package TO-247AD (3) * on die level Delivery Mode Tube Code No. 509198 Voltage class 150 T VJ = 175 C Schottky V 0 max threshold voltage 0.55 V R 0 max slope resistance * 2.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c DSA60C150PB Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 2.54 5.85 10.66 BSC 6.85 0.390 0.100 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A A1 OP H1 Q E D 4 3 L 3x b2 2 L1 1 3x b C 2x e A2 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c DSA60C150PB Schottky 100 10 1000 TVJ=175C 1 150C IR 125C IF 0.1 10 TVJ = 175C 125C 25C [A] CT 100C [mA] 100 [pF] 0.01 75C 50C 0.001 25C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TVJ= 25C 10 0.0001 0 50 100 150 0 50 VR [V] VF [V] 150 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 1 Maximum forward voltage drop characteristics 100 VR [V] 60 70 60 50 DC 50 d = 0.5 40 P(AV) 40 IF(AV) d= DC 0.5 0.33 0.25 0.17 0.08 30 30 [W] [A] 20 20 10 10 0 0 0 40 80 120 0 160 10 20 TC [C] 30 40 50 60 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1 i 1 2 3 4 5 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 Rthi [K/W] 0.02326 0.1539 0.2031 0.3892 0.08053 ti [s] 0.0005 0.011 0.072 0.34 1.5 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031c