SUP70030E
www.vishay.com Vishay Siliconix
S18-1020-Rev. A, 08-Oct-2018 1Document Number: 76678
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 100 V (D-S) MOSFET
FEATURES
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Very low Qgd reduces power loss from passing
through Vplateau
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
•DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
• OR-ing / e-fuse
Notes
a. Duty cycle 1 %
b. See SOA curve for voltage derating
c. When mounted on 1" square PCB (FR4 material)
d. Package limited
PRODUCT SUMMARY
VDS (V) 100
RDS(on) max. () at VGS = 10 V 0.00318
RDS(on) max. () at VGS = 7.5 V 0.00384
Qg typ. (nC) 142.4
ID (A) 150 d
Configuration Single
TO-220AB
Top View
S
S
D
G
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free and halogen-free SUP70030E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V
Gate-source voltage VGS ± 20
Continuous drain current (TJ = 150 °C) TC = 25 °C ID
150 d
A
TC = 70 °C 150 d
Pulsed drain current (t = 100 μs) IDM 500
Avalanche current IAS 60
Single avalanche energy aL = 0.1 mH EAS 180 mJ
Maximum power dissipation aTC = 25 °C PD
375 b
W
TC = 125 °C 125 b
Operating junction and storage temperature range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient (PCB mount) cRthJA 40 °C/W
Junction-to-case (drain) RthJC 0.4
SUP70030E
www.vishay.com Vishay Siliconix
S18-1020-Rev. A, 08-Oct-2018 2Document Number: 76678
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V
Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2 - 4
Gate-body leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 nA
Zero gate voltage drain current IDSS
VDS = 100 V, VGS = 0 V - - 1 μA
VDS = 100 V, VGS = 0 V, TJ = 125 °C - - 150
VDS = 100 V, VGS = 0 V, TJ = 175 °C - - 5 mA
On-state drain current aID(on) VDS 10 V, VGS = 10 V 120 - - A
Drain-source on-state resistance aRDS(on)
VGS = 10 V, ID = 30 A - 0.00265 0.00318
VGS = 7.5 V, ID = 20 A - 0.00320 0.00384
Forward transconductance agfs VDS = 15 V, ID = 30 A - 110 - S
Dynamic b
Input capacitance Ciss
VGS = 0 V, VDS = 50 V, f = 1 MHz
- 10 870 -
pFOutput capacitance Coss - 820 -
Reverse transfer capacitance Crss -40-
Total gate charge cQg
VDS = 50 V, VGS = 10 V, ID = 20 A
- 142.4 214
nC
Gate-source charge cQgs -46.8-
Gate-drain charge cQgd -18.5-
Output charge Qoss VDS = 50 V, VGS = 0 V - 138 207
Gate resistance Rgf = 1 MHz 0.34 1.7 3.4
Turn-on delay time ctd(on)
VDD = 50 V, RL = 3
ID 10 A, VGEN = 10 V, Rg = 1
-3060
ns
Rise time ctr-1326
Turn-off delay time ctd(off) - 50 100
Fall time ctf-1530
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed current (t = 100 μs) ISM - - 250 A
Forward voltage aVSD IF = 10 A, VGS = 0 V -0.81.5V
Reverse recovery time trr
IF = 34 A, di/dt = 100 A/μs
- 76 150 ns
Peak reverse recovery charge IRM(REC) -4.65.6A
Reverse recovery charge Qrr - 0.205 0.24 μC
Reverse recovery fall time ta-52-ns
Reverse recovery rise time tb-24-
SUP70030E
www.vishay.com Vishay Siliconix
S18-1020-Rev. A, 08-Oct-2018 3Document Number: 76678
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
50
100
150
200
01234
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
VGS = 10 V thru 6 V
VGS = 5 V
VGS = 4 V
10
100
1000
10000
0
30
60
90
120
150
0 10.0 20.0 30.0 40.0 50.0 60.0
Axis Title
1st line
2nd line
2nd line
gfs - Transconductance (S)
ID- Drain Current (A)
T
C
=-55 °C
T
C
= 25 °C
T
C
= 125 °C
10
100
1000
10000
10
100
1000
10 000
020406080100
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
VDS - Drain-to-Source Voltage (V)
C
iss
Crss
Coss
10
100
1000
10000
0
20
40
60
80
100
0 1.6 3.2 4.8 6.4 8
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VGS - Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= 25 °C
T
C
=-55 °C
10
100
1000
10000
0.001
0.002
0.003
0.004
0.005
0 50 100 150 200
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
ID- Drain Current (A)
V
GS
= 7.5 V
V
GS
= 10 V
10
100
1000
10000
0
2
4
6
8
10
0306090120150
Axis Title
1st line
2nd line
2nd line
VGS - Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
I
D
= 20 A
V
DS
= 25 V, 50 V, 80 V
SUP70030E
www.vishay.com Vishay Siliconix
S18-1020-Rev. A, 08-Oct-2018 4Document Number: 76678
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
Current De-rating
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Normalized)
TJ- Junction Temperature (°C)
VGS = 7.5 V, 20 A
VGS = 10 V, 30 A
10
100
1000
10000
0
0.002
0.004
0.006
0.008
0.010
46810
Axis Title
1st line
2nd line
2nd line
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
TJ= 125 °C
TJ= 25 °C
ID= 30 A
10
100
1000
10000
105
108
111
114
117
-50-25 0 255075100125150175
Axis Title
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
TJ- Junction Temperature (°C)
ID= 250 μA
10
100
1000
10000
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2
Axis Title
1st line
2nd line
2nd line
IS- Source Current (A)
VSD - Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
100
1000
10000
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150 175
Axis Title
1st line
2nd line
2nd line
VGS(th) (V)
TJ- Junction Temperature (°C)
ID= 250 μA
10
100
1000
10000
0
50
100
150
200
250
0255075100125150175
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
TC- Case Temperature (°C)
Package limited
SUP70030E
www.vishay.com Vishay Siliconix
S18-1020-Rev. A, 08-Oct-2018 5Document Number: 76678
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Safe Operating Area Single Pulse Avalanche Current Capability vs. Time
Note
a. VGS > minimum VGS at which RDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual pplication parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76678.
10
100
1000
10000
1
10
100
1000
0.1 1 10 100 1000
Axis Title
1st line
2nd line
2nd line
ID- Drain Current (A)
VDS - Drain-to-Source Voltage (V)
IDM limited
TC= 25 °C,
single pulse
Limited by RDS(on) a
BVDSS limited
10 ms
1 ms
100 μs
DC, 10 s,
1s, 100 ms
10
100
0.00001 0.0001 0.001 0.01
2nd line
IDAV - Drain Current Avalanche (A)
t-Time (s)
25 °C
150 °C
Square Wave Pulse Duration (s)
1
0.1
0.01
10-4 10-3 10-2 10-1
Normalized Effective Transient
Thermal Impedance
1
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 62.5 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Package Information
www.vishay.com Vishay Siliconix
Revison: 16-Jun-14 1Document Number: 71195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220AB
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
D2
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
D2 12.19 12.70 0.480 0.500
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
Ø P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
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Revision: 01-Jan-2021 1Document Number: 91000
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