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BA592/BA892...
Silicon RF Switching Diode
• For band switching in TV/VTR tuners
and mobile applications
• Very low forward resistance (typ. 0.45 Ω @ 3 mA)
• Small capacitance
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BA592
BA892/-02L
BA892-02V
Type Package Configuration LS(nH) Marking
BA592
BA892
BA892-02L
BA892-02V
SOD323
SCD80
TSLP-2-1
SC79
single
single
single, leadless
single
1.8
0.6
0.4
0.6
blue S
AA
AA
A
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR35 V
Forward current IF100 mA
Junction temperature TJ150 °C
Operating temperature range Top -55 ... 125
Storage temperature TSt
g
-55 ... 150
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BA592
BA892, BA892-02V
BA892-02L
RthJS
≤ 135
≤ 120
≤ 70
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 20 V
IR- - 20 nA
Forward voltage
IF = 100 mA
VF- - 1 V
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 3 V, f = 1 MHz
VR = 0 V, f = 100 MHz
CT
0.65
0.6
-
0.92
0.85
1
1.4
1.1
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
RP- 100 - kΩ
Forward resistance
IF = 3 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
0.45
0.36
0.7
0.5
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3mA,
RL = 100 Ω
τ rr - 120 - ns
I-region width WI- 3 - µm
Insertion loss1)
IF = 0.1 mA, f = 1.8 GHz
IF = 3 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
IL
-
-
-
0.1
0.5
0.4
-
-
-
dB
Isolation1)
VR = 0 V, f = 100 MHz
VR = 0 V, f = 470 MHz
VR = 0 V, f = 1 GHz
ISO
-
-
-
23.5
10.5
5.5
-
-
-
1BA892-02L in series configuration, Z = 50Ω
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Diode capacitance CT = ƒ (VR)
f = Parameter
0 5 10 15 20 V30
VR
0
0.4
0.8
1.2
pF
2
CT
1 MHz ... 1 GHz
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 5 10 15 20 V30
VR
-1
10
0
10
1
10
2
10
3
10
KOhm
Rp
100 MHz
1 GHz
Forward resistance rf = ƒ (IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2
mA
IF
-1
10
0
10
1
10
2
10
Ohm
rf
Forward current IF = ƒ (VF)
TA = Parameter
0 0.2 0.4 0.6 0.8 V1.2
VF
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
A
IF
-40 °C
25 °C
85 °C
125 °C
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Isolation ISO = -|S21|2 = ƒ(f)
VR = Paramter
BA892-02L in series configuration, Z = 50Ω
0 0.5 1 1.5 2 GHz 3
f
-30
-25
-20
-15
-10
dB
0
|S21|2
0 V
1 V
10 V
Insertion loss IL = -|S21|2 = ƒ(f)
IF = Parameter
BA892-02L in series configuration, Z = 50Ω
0 0.5 1 1.5 2 GHz 3
f
-0.4
-0.3
-0.2
dB
0
|S21|2
10 mA
3 mA
1 mA
0.1 mA
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Package SC79
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Package SCD80
Package Outline
Foot Print
Marking Layout (Example)
±0.1
1.7
0.3
1
2
marking
Cathode
0.8
±0.1
10
˚
MAX.
±0.1
0.7
±0.1
1.3 7
˚
0.13
±0.05
+0.05
-0.03
±1.5
˚
0.2
M
A
A
±0.05
0.2
0.35
0.35
1.45
BAR63-02W
Type code
Cathode marking
Laser marking
0.7
20.2
0.9
0.4
8
4
1.45
2.5
Standard Reel with 2 mm Pitch
Cathode
marking
Cathode
marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code
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BA592/BA892...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
1) New Marking Layout for SC75, implemented at October 2005.
.
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01apAPapAPapAP
02bqBQbqBQbqBQ
03crCRcrCRcrCR
04dsDSdsDSdsDS
05et ETet ETet ET
06fuFUfuFUfuFU
07gvGVgvGVgvGV
08hxHXhxHXhxHX
09jyJYjyJYjyJY
10kzKZkzKZkzKZ
11l 2L4l 2L4l 2L4
12n3N5n3N5n3N5
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Package SOD323
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Package TSLP-2-1
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Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
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Life support devices or systems are intended to be implanted in the human body or
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