TLP180
2009-01-19
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP180
Telephone Use Equipment
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP180 is a small outline coupler, suitable
for surface mount assembly.
TLP180 consist of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.
• Collector-emitter voltage: 80 V (min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• Isolation voltage: 3750 Vrms (min)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002, certificate no.8285
BS EN60950-1:2002, certificate no.8286
Current Transfer Ratio
Current Transfer Ratio
IF = 5 mA, VCE = 5 V, Ta = 25℃
Classi-
fication(*1) Min Max
Marking Of
Classification
Standard 50 600
Blank, YE, GR, BL , GB
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB
＊The product with the Rank Y and BL are limited in production.
For details, please contact your nearest Toshiba sales representative.
(*1): Ex. rank GB: TLP180 (GB)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP180(GB): TLP180
TOSHIBA 11−4C1
Weight: 0.09 g (typ.)
Pin Configuration
(top view)
6
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
4
1
3
Unit in mm
TLP180
2009-01-19
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF(RMS) ±50 mA
Forward current detating (Ta≥53°C) ΔIF / °C −0.7 mA / °C
Pulse forward current (Note 1) IFP ±1 A
LED
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 80 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta ≥ 25°C) ΔPC / °C −1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Operating temperature range Topr −55 to 100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta ≥ 25°C) ΔPT / °C −2.0 mW / °C
Isolation voltage (AC,1 min., R.H. ≤ 60%) (Note 2) BVS 3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width ≤ 100 μs,f=100 Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 48 V
Forward current IF(RMS) ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25
― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP180
2009-01-19
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = ±10 mA 1.0 1.15 1.3 V
LED
Capacitance CT V = 0, f = 1 MHz ― 60 ― pF
Collector−emitter
breakdown voltage V(BR) CEO IC = 0.5 mA 80 ― ― V
Emitter−collector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 ― ― V
VCE = 48 V (ambient light
below 1000 ℓx)
(Note 3)
― 0.01
(2)
0.1
(10) μA
Collector dark current ICEO VCE = 48 V (ambient light
Ta = 85°C below 1000 ℓx)
(Note 3)
― 2
(4)
50
(50) μA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz ― 10 ― pF
Note 3: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
IF = ±5 mA, VCE = 5 V 50 — 600
Current transfer ratio IC / IF Rank GB 100 — 600
%
IF = ±1 mA, VCE = 0.4 V — 60 —
Saturated CTR IC / IF (sat) Rank GB 30 — —
%
IC = 2.4 mA, IF = ±8 mA — — 0.4
IC = 0.2 mA, IF = ±1 mA — 0.2 —
Collector−emitter
saturation voltage VCE (sat)
Rank GB — — 0.4
V
Off−state collector current IC(off) V
F = ± 0.7 V, VCE = 48 V — 1 10 μA
CTR symmetry IC (ratio) IC (IF = −5 mA) / IC (IF = 5 mA)
(Note 4) 0.33 1 3 —
Note 4: IC(ratio)= 5V)
CE
V,
F1
I
F
(I
C1
I
5V)
CE
V,
F2
I
F
(I
C2
I
==
==
IC1
IC2
VCE
IF1
IF2
TLP180
2009-01-19
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance input to output CS VS = 0 V, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V, R.H. ≤ 60% 5×1010 1014 ― Ω
AC, 1 minute 3750 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― V
dc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr ― 2 ―
Fall time tf ― 3 ―
Turn−on time tON ― 3 ―
Turn−off time tOFF
VCC = 10 V, IC = 2 mA
RL = 100 Ω
― 3 ―
μs
Turn−on time tON ― 2 ―
Storage time ts ― 25 ―
Turn−off time tOFF
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = ±16 mA
― 40 ―
μs
Fig. 1: Switching time test circuit
tOFF
tON
VCE
IF
ts VCC
4.5V
0.5V
VCC
RL
IF
VCE
TLP180
2009-01-19
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PC – Ta
200
−20 0 20 40 60 80 100 120
160
120
80
40
0
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
Pulse width ≤ 100 μs
Ta = 25°C
10−3 10−210−1 100
30
50
100
300
1000
500
ΔVF / ΔTa – IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa ( mV / ° C )
−3.2
−0.4
0.1
−2.8
−2.4
−2.0
−1.6
−1.2
−0.8
0.3 0.5 1 3 5 10 30 50
IFP – VFP
Pulse forward voltage VFP (V)
1000
1
0.6
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse width ≤ 10 μs
Repetitive
Frequency = 100 Hz
Ta = 25°C
Pulse forward current IFP (mA)
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
−20
80
60
40
20
0
0 20 40 60 80 100 120
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.001
0
10
1
0.1
0.01
0.4 0.8 1.2 1.6 2
−25°C 85°C 25
°C
TLP180
2009-01-19
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Collector current IC (mA)
IC – VCE
50
0
Collector-emitter voltage VCE (V)
0
40
30
20
10
2 4 6 8 10
50
mA
30
mA
2
0
mA
1
5
mA
10
mA
PC(MAX)
IF = 5 mA
Ta = 25°C
Collector-emitter voltage VCE (V)
Forward current IF (mA)
IC / IF – IF
Current transfer ratio
I
C / IF (%)
1000
10
0.1 0.3 0.5 1 3 5 10 30 50
30
50
100
300
500
VCE = 10 V
VCE = 5 V
VCE = 0.4 V
Ta = 25°C
Sample B
Sample A
Collector dark current ID(ICEO) (μA)
ICEO – Ta
Ambient temperature Ta (°C)
0
101
VCE = 48V
5
V
1
0
V
24
V
20 40 60 80 100
100
10
−
1
10
−
2
10
−
3
10
−
4
IC – IF
Forward current IF (mA)
Collector current IC (mA)
0.1
0.1
0.3
0.5
1
3
5
10
30
50
100
0.3 0.5 1 3 5 10 30 50
Sample A
Sample B
Ta = 25°C
VCE = 10 V
VCE = 5 V
VCE = 0.4 V
IC – VCE
30
0
0 1.0
0.2 0.4 0.6 0.8
20
10
Collector current IC (mA)
50
mA
Ta = 25°C
4
0
mA
30
mA
2
0
mA
10
mA
5
mA
2 mA
TLP180
2009-01-19
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VCE(sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE(sat) (V)
0.24
0
−40
0.20
0.12
0.08
0.04
−20 0 40 80 100 20 60
0.16
IF = 5 mA, IC = 1 mA
IF = 1 mA, IC = 0.2mA
IF = 1 mA
IC = 0.2 mA
IC – Ta
Collector current IC (mA)
100
1
−20 100
0 20 40 80
30
5
60
0.1
0.3
0.5
3
10
50
VCE = 5 V
1mA
0.5mA
5
mA
1
mA
IF = 25mA
Ambient temperature Ta (°C)
Switching Time – RL
Load resistance RL (kΩ)
1
10
30
50
100
300
500
1000
3 5 30 50
Switching time (μs)
5
3
1
Ta = 25°C
IF = 16 mA
VCC = 5 V
tOFF
ts
tON
100 10
Switching time (μs)
Switching Time – Ta
0
160
−20 20 40 60 80
Ambient temperature Ta (°C)
30
10
1
0.5
0.1
100
0.3
3
5
50 tOFF
ts
tON
IF = 16 mA
VCC = 5 V
RL = 1.9 kΩ
TLP180
2009-01-19
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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