1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage V DS 150
VDSX *5 130
Continuous drain current ID±33
Pulsed drain current ID(puls] ±132
Gate-source voltage VGS ±20
Repetitive or non-repetitive IAR *2 33
Maximum Avalanche Energy E AS *1 169
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 2.16
Tc=25°C 53
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3537-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±20V
ID=11.5A
ID=11.5A VDS=25V
VCC=48V ID=11.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 2.359
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=48V
ID=23A
VGS=10V
L=228µH Tch=25°C
IF=23A VGS=0V Tch=25°C
IF=23A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
150
1.0 2.5
25
250
10 100
65 90
60 81
54 70
12 24
1900 2850
200 300
17 25.5
10 15
15 23
85 128
12 18
46 70
812
12.5 19
33 1.10 1.65
0.13
0.6
-55 to +150
Outline Drawings [mm]
*3 IF=-ID, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C
<<<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
VGS=4V
VGS=5V
VGS=10V
200304
*1 L=0.228mH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch=150°C
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*4 VDS 150V *5 VGS=-20V
=
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Characteristics
2SK3537-01MR FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
0.1
1
10
100
ID[A]
VGS[V]
Typical Trans fer Character istic
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0 1020304050
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
8V
RDS(o n) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistanc e
10V
20V
5.0V
4.5V
4.0V
VGS=3.5V
0 25 50 75 100 125 150
0
5
10
15
20
25
30
35
40
45
50
55
60
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
25
30
35
40
45
50
55
4.5V
20V 10V 8V 5.0V
4.0V
ID [A]
VDS [V]
Typical Output Characteristi c s
ID=f(VDS):80 µs pulse test,Tch=25 °C
VGS=3.5V
0 25 50 75 100 125 150
0
100
200
300
400
500
IAS=14A
IAS=33A
IAS=20A
EAS [mJ]
starting Tch [°C]
Ma ximum Avalanche Energy vs. starting Tch
EAS=f(starting Tch):Vcc=48V
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2SK3537-01MR FUJI POWER MOSFET
VGS=f(Qg):ID=23A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
-50 -25 0 25 50 75 100 125 150
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
RDS(on) [ Ω ]
Tch [ °C]
typ.
max.
Drain- So ur c e On- s tate Res i s tance
RDS(on)=f(Tch):ID=11.5A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=1mA
VGS(th) [V]
Tch [°C]
0 102030405060708090100
0
2
4
6
8
10
12
14
16
18
20
22
24
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 48 V
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
100
VGS=10V VGS=0V
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID[A]
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4
2SK3537-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche Curre nt I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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