AOT2500L/AOB2500L
Symbol Min Typ Max Units
BV
DSS
150 V
V
DS
=150V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage 2.3 2.8 3.5 V
5.4 6.5
T
J
=125°C 10.2 12.3
g
FS
70 S
V
SD
0.66 1 V
I
S
152 A
C
iss
6460 pF
C
oss
586 pF
C
rss
22 pF
R
g
1 2.1 3.2 Ω
Q
g(10V)
97 136 nC
V
GS
=6V, I
D
=20A
TO220 5.9 7.6 mΩ
5.1 6.2 mΩ
V
GS
=10V, I
D
=20A
TO263
V
DS
=V
GS,
I
D
=250µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Gate-Body leakage current
Reverse Transfer Capacitance V
GS
=0V, V
DS
=75V, f=1MHz
mΩ
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
TO220
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
Forward Transconductance
V
GS
=6V, I
D
=20A
TO263 mΩ
7.35.6
V
GS
=10V, I
D
=20A
SWITCHING PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Diode Forward Voltage
gs
Q
gd
17 nC
t
D(on)
18.5 ns
t
r
20 ns
t
D(off)
67.5 ns
t
f
14 ns
t
rr
90 ns
Q
rr
1090 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
GS
DS
D
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time I
F
=20A, dI/dt=500A/µs
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=75V, R
L
=3.75Ω,
R
GEN
=3Ω
Turn-Off Fall Time I
F
=20A, dI/dt=500A/µs
Gate Drain Charge
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PDis based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1. 0: July 2013 www.aosmd.com Page 2 of 6