Data Sheet 1 of 10 Rev. 04, 2009-07-16
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
PTFA142401FL
Package H-34288-2
Description
The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs
designed for DVB and DAB applications in the 1450 to 1500 MHz
frequency band. Features include internal I/O matching and thermally-
enhanced packages with slotted or earless flanges. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA142401EL
Package H-33288-2
Thermally-Enhanced High Power RF LDMOS FET
240 W, 1450 – 1500 MHz
DVB-T Drive-up
VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz,
DVB-T signal, PAR = 9.65 dB at 0.01%, 8 MHz BW
ACPR = 1475+/-4.3 MHz delta marker, 30 kHz RBW
-45
-40
-35
-30
-25
42 43 44 45 46 47 48 49
Average Output Power (dBm)
0
10
20
30
40
Drain Efficiency (%)
ACPR Hi
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR Low
Features
•Pb-free, RoHS-compliant and thermally-enhanced
packages with less than 0.25 micron Au plating
•Broadband internal matching
•Typical DVB-T performance at 1475 MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 16.0 dB
- Efficiency = 27.5%
- Adjacent channel power = –32 dBc
•Typical CW performance, 1475 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 52%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 30 V,
200 W (CW) output power
*See Infineon distributor for future availability.
RF Characteristics
DVB-T Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 2.0 A, POUT = 50 W average
ƒ = 1475 MHz DVB-T, channel bandwidth = 8.0 MHz , peak/average = 9.65 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps —16.5 —dB
Drain Efficiency ηD—27.5 —%
Adjacent Channel Power Ratio (±4.3 MHz offset, 30 kHz RBW) ACPR —–32 —dBc
Data Sheet 2 of 10 Rev. 04, 2009-07-16
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 2.0 A, POUT = 240 W PEP, ƒ = 1500 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 15.0 16.0 —dB
Drain Efficiency ηD40 43 —%
Intermodulation Distortion IMD —–31 –29 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.05 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 2.0 A VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD625 W
Above 25°C derate by 3.57 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 240 W CW) RθJC 0.28 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping Marking
PTFA142401EL V4 H-33288-2 Thermally-enhanced, slotted flange, Tray PTFA142401EL
single-ended
PTFA142401FL V4 H-34288-2 Thermally-enhanced, earless flange, Tray PTFA142401FL
single-ended
*See Infineon distributor for future availability.
Data Sheet 3 of 10 Rev. 04, 2009-07-16
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
Pulsed CW Characteristics
VDD = 30 V, IDQ = 1800 mA, ƒ = 1475 MHz
10 µs pulse time, 10% duty cycle
47
49
51
53
55
57
59
30 32 34 36 38 40 42
Input Power (dBm)
Output Power (dBm)
Measured POUT
Ideal POUT
Broadband Performance
VDD = 30 V, IDQ = 2000 mA, POUT = 50 W
10
15
20
25
30
35
40
1400 1430 1460 1490 1520 1550
Frequency (MHz)
Gain (dB), Efficiency (%)
-30
-25
-20
-15
-10
-5
0
Input Return Loss (dB)
Gain
Efficiency
Return Loss
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 2000 mA, ƒ = 1475 MHz
12
13
14
15
16
17
0 40 80 120 160 200 240 280
Output Power (W)
Gain (dB)
10
20
30
40
50
60
Drain Efficiency (%)
Gain
Efficiency
Typical Performance (data taken in an Infineon test fixture)
Two-tone Drive-up
VDD = 30 V, IDQ = 2000 mA,
ƒ = 1475 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
45 47 49 51 53 55
Output Power, PEP (dBm)
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
IM5
Efficiency
IM7
Intermodulation Distortion (dBc)
IM3
Data Sheet 4 of 10 Rev. 04, 2009-07-16
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.98
0.98
0.99
0.99
1.00
1.00
1.01
1.01
1.02
1.02
1.03
1.03
-20 020 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
2.33 A
4.65 A
6.99 A
9.33 A
11.64 A
13.98 A
16.32 A
18.66 A
21.00 A
CW Power Sweep (P–1dB)
VDD = 30 V, IDQ = 1.8 A, ƒ = 1500 MHz
13
14
15
16
17
18
040 80 120 160 200 240 280
Output Power (W)
Gain (dB)
10
20
30
40
50
60
Drain Efficiency (%)
Drain Efficiency
TCASE = 25°C
TCASE = 90°C
Gain
Gain vs. Output Power
VDD = 30 V, ƒ = 1500 MHz
15.0
15.5
16.0
16.5
17.0
040 80 120 160 200 240
Output Power (W)
Power Gain (dB)
IDQ = 1800 mA
IDQ = 1500 mA
IDQ = 1200 mA
IDQ = 600 mA
IDQ = 900 mA
Data Sheet 5 of 10 Rev. 04, 2009-07-16
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1450 2.3 –6.4 1.2 –1.4
1463 2.3 –6.2 1.2 –1.3
1475 2.2 –6.0 1.2 –1.2
1488 2.2 –5.8 1.2 –1.2
1500 2.1 –5.7 1.2 –1.1
Broadband Circuit Impedance
0.1
0.2
0.1
0.1
.
2
-
W
AV
E
LE
N
GT
H
S T
O
W
AR
D
G
E
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
1450 MHz
1500 MHz
Z Load
Z Source
1450 MHz
1500 MHz
Z0 = 50 Ω
See next page for circuit information
Data Sheet 6 of 10 Rev. 04, 2009-07-16
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
V66100-G9259-D331-01-7606.dwg
R4
2K V
R1
1.2K V
C7
33pF
l1
DUT
J1
C6
7.5pF
C5
0.1µF
C4
10µF
35V
R7
5.1K V
R6
10 V
C14
10µF
35V
l2l3l5
l6
l4
C8
4.5pF
C13
0.1µF
C16
1µF
C15
13pF
C19
0.1µF
C18
100µF
50V
C17
1µF
C20
10µF
35V
l14
C24
1.7pF
R3
2K V
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
C1
0.001µF
VDD
R5
10 V
VDD
l8
l7
C21
1.7pF
C22
1.7pF
l9l10
L2
l11 l12 l13
C23
33pF
C12
100µF
50V
C10
1µF
C9
13pF
C11
1µF
L1
Circuit Assembly Information
DUT PTFA142401EL or PTFA142401FL LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 4.5 TMM4 2 oz. copper
Microstrip Electrical Characteristics at 1475 MHz Dimensions: L x W ( mm) Dimensions: L x W (in.)
l10.038 λ, 53.1, Ω4.17 x 1.52 0.164 x 0.060
l20.108 λ, 47.5, Ω11.86 x 1.91 0.467 x 0.075
l30.014 λ, 47.5, Ω1.57 x 1.91 0.062 x 0.075
l40.012 λ, 16.3, Ω1.22 x 7.62 0.048 x 0.300
l50.051 λ, 8.9, Ω5.08 x 15.24 0.200 x 0.600
l60.171 λ, 66.9, Ω19.10 x 1.02 0.752 x 0.040
l7, l80.177 λ, 60.0, Ω19.66 x 1.27 0.774 x 0.050
l90.049 λ, 5.0, Ω4.80 x 27.94 0.189 x 1.100
l10 0.065 λ, 5.0, Ω6.38 x 27.94 0.251 x 1.100
l11 0.059 λ, 10.6, Ω5.97 x 12.70 0.235 x 0.500
l12 0.006 λ, 53.1, Ω0.71 x 1.52 0.028 x 0.060
l13 0.011 λ, 53.1, Ω1.19 x 1.52 0.047 x 0.060
l14 0.046 λ, 53.1, Ω5.05 x 1.52 0.199 x 0.060
Reference circuit schematic for ƒ = 1475 MHz
Reference Circuit
J2
Data Sheet 7 of 10 Rev. 04, 2009-07-16
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
V66100-G9259-D331-01-7631.dwg
R7
R6
C4
C6
R1
R2
Q1
C2
C3
R4 C1
C12
C24
C21
C8
C7
C23
C20
C19
C13
C14
L1
C11
C9
R3
R5 C5
RF_IN
C15
C17
C16
C18 L2
QQ1
C22
RF_OUT
C10
GND VDD
Reference circuit assembly diagram * (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C14, C20 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5, C13, C19 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6 Ceramic capacitor, 7.5 pF ATC 100B 7R5
C7, C23 Ceramic capacitor, 33 pF ATC 100B 330
C8 Ceramic capacitor, 4.5 pF ATC 100B 4R5
C9, C15 Ceramic capacitor, 13 pF ATC 100B 130
C10, C11, C16, C17 Capacitor, 1 µF ATC 920C105
C12, C18 Electrolytic capacitor, 100 µF, 50 VDigi-Key PCE3718CT-ND
C21, C22, C24 Ceramic capacitor, 1.7 pF ATC 100B 1R7
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2k ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3k ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor, 2k ohms Digi-Key P2KECT-ND
R4 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND
R5, R7 Chip resistor, 5.1k ohms Digi-Key P5.1KECT-ND
R6 Chip resistor, 10 ohms Digi-Key P10ECT-ND
*Gerber Files for this circuit available on request
Data Sheet 8 of 10 Rev. 04, 2009-07-16
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-33288-2
C66065-A0003-C723-01-0027 H-33288-2.dwg
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating less than 0.25 micron [10 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 9 of 10 Rev. 04, 2009-07-16
PTFA142401EL
PTFA142401FL
Confidential, Limited Internal Distribution
C66065-A0003-C724-01-0027 H-34288-2.dwg
Package Outline Specifications (cont.)
Package H-34288-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.102 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating less than 0.25 micron [10 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 10 of 10 Rev. 04, 2009-07-16
PTFA142401EL/FL V4
Confidential, Limited Internal Distribution
Revision History: 2009-07-16 Data Sheet
Previous Version: 2009-03-31, Data Sheet
Page Subjects (major changes since last revision)
6, 7 Fixed typing error
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-07-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
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that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
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