AO8803 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8803 is Pb-free (meets ROHS & Sony 259 specifications). AO8803L is a Green Product ordering option. AO8803 and AO8803L are electrically identical. VDS (V) = -12V ID = -7 A (VGS = -4.5V) RDS(ON) < 18m (VGS = -4.5V) RDS(ON) < 22m (VGS = -2.5V) RDS(ON) < 29m (VGS = -1.8V) ESD Rating: 4KV HBM D1 D2 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum -12 Units V 8 V -20 1.4 W 0.9 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A -5.8 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 -7 TA=25C Power Dissipation A G2 RJA RJL Typ 73 96 63 Max 90 125 75 Units C/W C/W C/W AO8803 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -12 IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 1 A VDS=0V, VGS=8V 10 A 18 VGS=-2.5V, ID=-6A 18 22 m VGS=-1.8V, ID=-5A 22 29 m VGS=-1.5V, ID=-1A 28 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-7A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A 23 Forward Transconductance Rg -1 15 VSD Crss -0.55 19 gFS Output Capacitance A -5 VDS=0V, VGS=4.5V TJ=125C Coss V TJ=55C VGS=-4.5V, ID=-7A IS Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=-9.6V, VGS=0V IDSS RDS(ON) Typ m 34 S -0.78 3960 VGS=0V, VDS=-6V, f=1MHz m -1 V -2.5 A 4750 pF 910 pF 757 VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-6V, ID=-7A pF 6.9 8.5 36.6 44 nC 3.4 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On Delay Time 15 ns tr Turn-On Rise Time 43 ns 158 ns tD(off) Turn-Off Delay Time tf Turn-Off Fall Time trr Qrr VGS=-4.5V, VDS=-6V, RL=0.86, RGEN=3 95 Body Diode Reverse Recovery Time IF=-7A, dI/dt=100A/s 49 Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/s 19.4 ns 60 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 4 : September 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8803 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 10 -8V VDS=-5V -3.0V 20 8 -2.0V 15 -ID(A) -ID (A) -1.5V 10 6 125C 4 25C 5 2 VGS=-1.0V 0 0 0 1 2 3 4 5 0.2 0.4 0.8 1 1.2 1.4 1.6 25 VGS=-1.8V 20 VGS=-2.5V Normalized On-Resistance RDS(ON) (m) 30 15 VGS=-4.5V 10 ID=-6A, VGS=-2.5V 1.4 ID=-5A, VGS=-1.8V 1.2 ID=-7A, VGS=-4.5V 1.0 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 50 1E+01 45 125C 1E+00 40 ID=-7A 1E-01 35 -IS (A) RDS(ON) (m) 0.6 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 30 25 25C 1E-02 1E-03 125C 20 1E-04 25C 15 1E-05 10 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO8803 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6400 5 Capacitance (pF) -VGS (Volts) 5600 VDS=-10V ID=-7A 4 3 2 1 Ciss 4800 4000 3200 2400 1600 Coss 800 0 Crss 0 0 5 10 15 20 25 30 35 40 45 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 TJ(Max)=150C TA=25C 40 10s 100s RDS(ON) limited 10ms 1.0 1s DC 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 20 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) 10 TJ(Max)=150C TA=25C 0 0.001 0.1 1 20 10 0.1s 10s 15 30 1ms 0.1 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000