AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807 and AO8807L are electrically identical. VDS (V) = -12V ID = -6.5 A (VGS = -4.5V) RDS(ON) < 20m (VGS = -4.5V) RDS(ON) < 24m (VGS = -2.5V) RDS(ON) < 30m (VGS = -1.8V) - RoHS Compliant -Halogen Free ESD Protected! D1 D2 TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 Rg Rg G1 G2 S1 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current Pulsed Drain Current ID IDM TA=70C C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V 8 V -60 1.4 W 0.9 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A -5 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead Maximum -12 -6.5 TA=25C Power Dissipation B S2 RJA RJL Typ 73 96 63 Max 90 125 75 Units C/W C/W C/W www.aosmd.com AO8807 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -12 -1 TJ=55C -5 IGSS Gate-Body leakage current VDS=0V, VGS=8V Gate Threshold Voltage VDS=VGS ID=-250A -0.35 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -60 10 VGS=-4.5V, ID=-6.5A TJ=125C Static Drain-Source On-Resistance VGS=-2.5V, ID=-6A Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On Delay Time tr Turn-On Rise Time A 16 20 23 28 19 24 m m 30 28 36 m VDS=-5V, ID=-6.5A 45 DYNAMIC PARAMETERS Ciss Input Capacitance Rg -0.85 23 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss A VGS=-1.8V, ID=-5.5A VSD Output Capacitance -0.53 A VGS=-1.5V, ID=-5A Forward Transconductance Coss Units m gFS IS Max V VDS=-12V, VGS=0V VGS(th) RDS(ON) Typ -0.56 1740 VGS=0V, VDS=-6V, f=1MHz S -1 V -1.4 A 2100 pF 334 pF VGS=0V, VDS=0V, f=1MHz 200 1.3 1.7 pF k 19 23 nC VGS=-4.5V, VDS=-6V, ID=-6.5A 4.5 nC 5.3 nC 240 ns 580 7 ns s 4.2 s VGS=-4.5V, VDS=-6V, RL=0.9, RGEN=3 tD(off) Turn-Off Delay Time tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-6.5A, dI/dt=100A/s 22 Qrr Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/s 17 27 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on T J(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. Rev1 :April 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO8807 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 -4.5V 50 VDS=-5V -2.5V 50 -3V 40 -2V -ID(A) -ID (A) 40 30 30 20 20 VGS=-1.5V 10 125C 10 0 25C 0 0 1 2 3 4 5 0 45 1 1.5 2 2.5 3 1.6 Normalized On-Resistance 40 VGS=-1.5V 35 RDS(ON) (m) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) -VDS (Volts) Figure 1: On-Region Characteristics(Note E) VGS=-2.5V 30 VGS=-1.8V 25 20 15 ID=-6A, VGS=-2.5V 1.4 ID=-6.5A, VGS=-4.5V 1.2 ID=-5A, VGS=-1.5V ID=-5.5A, VGS=-1.8V 1.0 VGS=-4.5V 10 0.8 0 2 4 6 8 10 12 14 16 18 20 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 50 1E+01 ID=-6.5A 45 1E+00 125C 40 1E-01 35 30 -IS (A) RDS(ON) (m) 50 125C 25 25C 1E-02 1E-03 20 1E-04 15 25C 1E-05 10 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) Alpha & Omega Semiconductor, Ltd. 8 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) www.aosmd.com AO8807 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2800 4.5 VDS=-6V ID=-6.5A 4 2400 Capacitance (pF) 3.5 -VGS (Volts) 3 2.5 2 1.5 1 1600 1200 800 0.5 400 0 0 0 4 8 12 16 Ciss 2000 20 Coss Crss 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 6 100 12 TJ(Max)=150C TA=25C 60 RDS(ON) limited 100s 1ms 1 10s 0.1s Power (W) ID (Amps) 10 80 10s 10 8 -VDS (Volts) Figure 8: Capacitance Characteristics 20 1s 0 DC TJ(Max)=150C TA=25C 0 0.01 40 0 0.0001 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=125C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO8807 Gate Charge Test Circuit & Waveform Vgs Qg - + VDC Qgs Vds Qgd + DUT - VDC -10V Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs VDC 90% - DUT Vdd + Rg Vgs 10% Vgs td(on) tr t d(off) ton tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.aosmd.com