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November 2013
Thermal Characteristics
Symbol Parameter FQB19N20CTM Unit
RJC Thermal Resistance, Junction to Case, Max. 0.9
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5
FQB19N20C
N-Channel QFET® MOSFET
200 V, 19 A, 170 mΩ
Description
FQB19N20C — N-Channel QFET® MOSFET
©2004 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
www.fairchildsemi.com
1
•
•
•
100% Avalanche Tested
•
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC),
and electronic lamp ballasts.
Features
19.0 A, 200 V, RDS(on) = 170 mΩ (Max.) @ VGS = 10 V,
ID = 9.5 A
Low Gate Charge (Typ. 40.5 nC)
Low Crss (Typ. 85 pF)
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter Unit
VDSS Drain-Source Voltage V
IDDrain Current - Continuous (TC = 25°C) A
- Continuous (TC = 100°C) A
IDM Drain Current - Pulsed (Note 1) A
VGSS Gate-Source voltage V
EAS Single Pulsed Avalanche Energy (Note 2) mJ
IAR Avalanche Current (Note 1) A
EAR Repetitive Avalanche Energy (Note 1) mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns
PD
Power Dissipation (TC = 25°C)
W
- Derate above 25°C
W
TJ, TSTG Operating and Storage Temperature Range °C
TLMaximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds °C
FQB19N20CTM
200
19.0
12.1
76.0
± 30
433
19.0
13.9
5.5
3.13
139
-55 to +150
300
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.
1.11 W/°C
Power Dissipation (TA = 25°C)*
40
GS
D
D2-PAK
G
S
D
• RoHS Compliant
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQB19N20C D2-PAK 330 mm 24 mm 800 units
FQB19N20C — N-Channel QFET® MOSFET
©2004 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
www.fairchildsemi.com
2
FQB19N20CTM
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol Parameter Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA200 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C
IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 10 µA
VDS = 160 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 9.5 A -- 0.140.17 Ω
gFS Forward Transconductance VDS = 40 V, ID = 9.5 A-- 10.8 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 830 1080 pF
Coss Output Capacitance -- 195 255 pF
Crss Reverse Transfer Capacitance -- 85 110 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 100 V, ID = 19.0 A
RG = 25 Ω
(Note 4)
-- 10 40ns
trTurn-On Rise Time -- 150 310 ns
td(off) Turn-Off Delay Time -- 135 280 ns
tfTurn-Off Fall Time -- 115 240 ns
QgTotal Gate Charge VDS = 160 V, ID = 19.0 A
VGS = 10 V
(Note 4)
-- 40.5 53 nC
Qgs Gate-Source Charge -- 6.0 -- nC
Qgd Gate-Drain Charge -- 22.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 19.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 76.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 19.0 A-- -- 1.5V
trr Reverse Recovery Time VGS = 0 V, IS = 19.0 A
dIF/dt =100 A/µs
-- 208 ns
Qrr Reverse Recovery Charge -- 1.63 -- µC
--
-- 0.24--V/οC
2.0 4.0 V
--
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 1.8 mH, IAS = 19.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 19.0 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
FQB19N20C — N-Channel QFET® MOSFET
©2004 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
www.fairchildsemi.com
3
Typical Characteristics
0 01 20 03 4050
0
2
4
6
8
10
12
VDS = 100V
VDS = 40V
VDS = 160V
※ Note : ID = 19.0A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 0101
0
500
1000
1500
2000
2500
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
10
VDS, Drain-Source Voltage [V]
0.0 0.4 0.8 1.2 1.6 2.0 2.4
10-1
100
101
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
25℃
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 01 20 03 04 05 60
0.0
0.2
0.4
0.6
0.8
VGS = 20V
VGS = 10V
※ Note : T
J = 25℃
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
22 810
10-1
100
101
150oC
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
ID, Drain Current [A]
10-1 0101
100
101
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
ID, Drain Current [A]
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics
VGS, Gate-Source Voltage [V]
64
FQB19N20C — N-Channel QFET® MOSFET
©2004 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
www.fairchildsemi.com
4
Typical Characteristics (Continued)
10-5 10-4 100101
10-2
10-1
100
Notes :※
1. Z θJC (t) = 0.90 ℃/W Max.
2. D uty F a c to r, D =t1/t2
3. T JM - T C = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
10-3 10-2 10-1
t1, S quare W ave Pulse D uration [sec]
25 50 75 100 125 150
0
5
10
15
20
ID, Drain Current [A]
TC, Case Temperature [℃]
100101102
10-1
100
101
102
10 ms
100 µs
DC
1 ms
Operation in This Area
is Limited by R DS( on)
※ Notes :
1. TC
= 25 o
C
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. VGS = 10 V
2. ID
= 9.5 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1. VGS = 0 V
2. ID
= 250 µ A
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [o
C]
V
DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t1
PDM
t2
Figure 8. On-Resistance Variation
vs Temperature
ZθJC(t), Thermal Response [oC/W]
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
©2004 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
www.fairchildsemi.com
5
FQB19N20C — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
FQB19N20C — N-Channel QFET® MOSFET
©2004 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
www.fairchildsemi.com
6
©2004 Fairchild Semiconductor Corporation
FQB19N20C Rev. C1
www.fairchildsemi.com
7
FQB19N20C — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO263 (D2PAK), Molded, 2-Lead, Surface Mount
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www.fairchildsemi.com
8
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Rev. I66
tm
®
FQB19N20C — N-Channel QFET® MOSFET
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