A1P50S65M2-F Datasheet ACEPACKTM 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC Features * ACEPACKTM 1 power module - DBC Cu Al2O3 Cu * Sixpack topology - 650 V, 50 A IGBTs and diodes - Soft and fast recovery diode Integrated NTC ACEPACKTM 1 * Applications * * * Inverters Industrial Motor drives Description This power module is a sixpack topology in an ACEPACKTM 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status A1P50S65M2-F Product summary Order code A1P50S65M2-F Marking A1P50S65M2-F Package ACEPACKTM 1 Leads type Press fit contact pins DS12333 - Rev 2 - March 2018 For further information contact your local STMicroelectronics sales office. www.st.com A1P50S65M2-F Electrical ratings 1 Electrical ratings 1.1 IGBT Limiting values at Tj = 25 C, unless otherwise specified. Table 1. Absolute maximum ratings of the IGBT Symbol Value Unit Collector-emitter voltage (VGE = 0) 650 V Continuous collector current (Tc = 100 C) 50 A Pulsed collector current (tp = 1 ms) 100 A VGE Gate-emitter voltage 20 V PTOT Total power dissipation of each IGBT (TC = 25 C, TJ = 175 C) 208 W TJMAX Maximum junction temperature 175 C -40 to 150 C VCES IC ICP (1) TJop Parameter Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 2. Electrical characteristics of the IGBT Symbol Parameter Test conditions Min. V(BR)CES Collector-emitter breakdown voltage IC = 1 mA, VGE = 0 V 650 VCE(sat) (terminal) Collector-emitter saturation voltage VGE = 15 V, IC = 50 A, TJ = 150 C 2.3 VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current Cies Input capacitance Output capacitance Cres Reverse transfer capacitance Qg Total gate charge td(on) V V VGE = 0 V, VCE = 650 V 100 A VCE = 0 V, VGE = 20 V 500 nA VGE = 0 V VCC = 520 V, IC = 50 A, VGE = 15 V 6 2.3 7 VCE = 25 V, f = 1 MHz, 5 Unit 4150 pF 170 pF 80 pF 150 nC Turn-on delay time VCC = 300 V, IC = 50 A, 143 ns Current rise time RG = 6.8 , VGE = 15 V, 16.5 ns Eon(1) Turn-on switching energy di/dt = 2400 A/s 0.140 mJ td(off) Turn-off delay time VCC = 300 V, IC = 50 A, 112 ns Current fall time RG = 6.8 , VGE = 15 V, 149 ns Turn-off switching energy dv/dt = 7600 V/s 1.45 mJ tr tf Eoff(2) DS12333 - Rev 2 1.95 Gate threshold voltage Max. V VGE = 15 V, IC= 50 A VGE(th) Coes Typ. page 2/13 A1P50S65M2-F Diode Symbol Parameter Test conditions Turn-on delay time VCC = 300 V, IC = 50 A, 148 ns Current rise time RG = 6.8 , VGE = 15 V, 19.2 ns Eon Turn-on switching energy di/dt = 2062 A/s, TJ = 150 C 0.311 mJ td(off) Turn-off delay time VCC = 300 V, IC = 50 A, 110 ns Current fall time RG = 6.8 , VGE = 15 V, 221 ns Turn-off switching energy dv/dt = 5800 V/s, TJ = 150 C 1.98 mJ Short-circuit withstand time VCC 360 V, VGE 15 V, td(on) tr (1) tf Eoff(2) tSC Min. Typ. Max. 6 TJstart 150 C Unit s RTHj-c Thermal resistance junction-to-case Each IGBT 0.65 RTHc-h Thermal resistance caseto-heatsink Each IGBT, grease = 1 W/(m*C) 0.79 0.72 C/W C/W 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. 1.2 Diode Limiting values at Tj = 25 C, unless otherwise specified. Table 3. Absolute maximum ratings of the diode Symbol Value Unit Repetitive peak reverse voltage 650 V Continuous forward current at (TC = 100 C) 50 A IFP(1) Pulsed forward current (tp = 1 ms) 100 A TJMAX Maximum junction temperature 175 C -40 to 150 C VRRM IF TJop Parameter Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature. Table 4. Electrical characteristics of the diode Symbol VF (terminal) DS12333 - Rev 2 Parameter Forward voltage Test conditions Min. Typ. Max. Unit IF = 50 A - 1.85 2.65 IF = 50 A, TJ = 150 C - 1.65 - 142 ns V trr Reverse recovery time Qrr Reverse recovery charge IF = 50 A, VR = 300 V, - 1.87 C Irrm Reverse recovery current VGE = 15 V, di/dt = 2400 A/s - 40 A Erec Reverse recovery energy - 0.41 mJ - 260 ns - 5.2 C - 58 A - 1.32 mJ trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current Erec Reverse recovery energy IF = 50 A, VR = 300 V, VGE = 15 V, di/dt = 2062 A/s, TJ = 150 C page 3/13 A1P50S65M2-F NTC Symbol 1.3 Parameter Test conditions Min. Typ. Max. Unit RTHj-c Thermal resistance junction-to-case Each diode - 1.0 1.1 C/W RTHc-h Thermal resistance caseto-heatsink Each diode, grease = 1 W/(m*C) - 0.9 C/W NTC Table 5. NTC temperature sensor, considered as stand-alone Symbol Parameter Test conditions R25 Resistance T = 25C 5 k R100 Resistance T = 100C 493 R/R Deviation of R100 B25/50 B-constant 3375 K B25/80 B-constant 3411 K T Min. Max. -5 Operating temperature range Unit +5 -40 Figure 1. NTC resistance vs temperature R () Typ. % 150 C Figure 2. NTC resistance vs temperature, zoom R () GADG260720171142NTC GADG260720171151NTCZ 800 max 10 4 700 600 10 3 min 500 typ 400 10 2 1.4 0 25 50 75 100 125 300 85 TC (C) 90 95 100 105 110 TC (C) Package Table 6. ACEPACKTM 1 package Symbol DS12333 - Rev 2 Parameter Min. Visol Isolation voltage (AC voltage, t = 60 s) Tstg Storage temperature -40 CTI Comparative tracking index 200 Typ. Max. Unit 2500 V 125 C Ls Stray inductance module P1 - EW loop 28.7 nH Rs Module single lead resistance, terminal-to-chip 3.9 m page 4/13 A1P50S65M2-F Electrical characteristics (curves) 2 Electrical characteristics (curves) Figure 3. IGBT output characteristics (VGE = 15 V, terminal) Ic (A) 80 IGBT111020170929TCH Figure 4. IGBT output characteristics (TJ = 150 C, terminal) IC (A) 90 IGBT101020171341OC25 19 V 17 V 80 TJ = 25 C 15 V 70 60 13 V 11 V 60 TJ = 150 C 50 40 40 30 20 VGE = 9 V 20 10 0 0 1 2 3 4 VCE (V) Figure 5. IGBT transfer characteristics (VCE = 15 V, terminal) IC (A) IGBT101020171339OC25 0 0 1 E (mJ) 4 VCE (V) IGBT101020171348SLG VCC = 300 V, IC = 50 A, VGE = 15 V 4.0 3.0 TJ = 25 C 3 Figure 6. Switching energy vs gate resistance EON (TJ = 150 C) 80 60 2 EOFF (TJ = 150 C) EON (TJ = 25 C) 2.0 40 TJ = 150 C EOFF (TJ = 25 C) 1.0 20 0 5 DS12333 - Rev 2 0 0 6 7 8 9 10 11 12 20 40 60 80 RG () VGE (V) page 5/13 A1P50S65M2-F Electrical characteristics (curves) Figure 7. Switching energy vs collector current IGBT101020171351SLC E (mJ) VCC = 300 V, RG = 6.8 , VGE = 15 V IGBT101020171353OC25 IC (A) TJ = 125 C, VGE = 15 V, RG = 6.8 50 EOFF (TJ = 150 C) 3 Figure 8. IGBT reverse biased safe operating area (RBSOA) 40 EOFF (TJ = 25 C) 2 30 EON (TJ = 150C) 1 20 EON (TJ = 25 C) 10 0 10 30 50 70 90 IC (A) Figure 9. Diode forward characteristics IGBT101020171356DVF IF (A) 0 0 100 200 300 400 500 600 VCE (V) Figure 10. Diode reverse recovery energy vs diode current slope IGBT101020171356OC25 Erec (mJ) VCE = 300 V, VGE = 15 V, IF = 50 A 80 1.2 TJ = 150 C 60 TJ = 150 C 0.9 40 0.6 TJ = 25 C 20 0.3 0 0 0.4 0.8 1.2 1.6 2.0 VF (V) Figure 11. Diode reverse recovery energy vs forward current IGBT101020171402RRE Erec (mJ) VCE = 300 V, VGE = 15 V, RG = 6.8 1.6 0 200 1300 1850 di/dt (A/s) Figure 12. Diode reverse recovery energy vs gate resistance Erec (mJ) TJ = 150 C IGBT101020171406RRE VCE = 300 V, VGE = 15 V, IF = 50 A 0.6 0.4 0.3 TJ = 25 C 30 50 70 90 TJ = 150 C 0.9 0.8 DS12333 - Rev 2 750 1.2 1.2 0 10 TJ = 25 C IF (A) 0 0 TJ = 25 C 20 40 60 80 RG () page 6/13 A1P50S65M2-F Electrical characteristics (curves) Figure 13. Inverter diode thermal impedance Zth (C/W) IGBT111020170844MT Figure 14. IGBT thermal impedance Zth (C/W) IGBT111020170846MT Zth(typ.)JH Zth(typ.)JH 100 JC i 0.5169 0.2851 0.1197 i(s) 0.0008 0.0074 0.0368 0.2601 JH RC - Foster thermal network 1 2 3 4 0.2091 0.5735 0.7511 0.3615 DS12333 - Rev 2 i(s) 0.0010 10-1 0.0116 0.0729 100 Zth(max.)JC JC 4 0.1746 i 10-2 RC - Foster thermal network 1 2 3 ri (C/W) ri (C/W) 10-1 10-3 10 0 Zth(max.)JC i ri (C/W) i(s) JH i 0.3310 t (s) 10 -1 10 -3 ri (C/W) i(s) 10 -2 RC - Foster thermal network 1 2 3 4 0.0718 0.2858 0.2471 0.1130 0.0002 0.0072 0.0392 0.2850 RC - Foster thermal network 1 2 3 4 0.0808 0.3144 0.6701 0.3713 0.0003 0.0113 0.0752 0.3492 10 -1 10 0 t (s) page 7/13 A1P50S65M2-F Test circuits 3 Test circuits Figure 15. Test circuit for inductive load switching C A Figure 16. Gate charge test circuit k A k L=100 H G E B B + 3.3 F C G RG 1000 F VCC k D.U.T k E k k AM01505v1 AM015 04v 1 Figure 17. Switching waveform Figure 18. Diode reverse recovery waveform 90% 10% VG 90% VCE 10% Tr(Voff) 25 Tcross 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS12333 - Rev 2 page 8/13 A1P50S65M2-F Topology and pin description 4 Topology and pin description Figure 19. Electrical topology and pin description P G3 G1 G5 T1 U V W T2 G4 G2 E'U EU E'V G6 EV E'W EW Figure 20. Package top view with sixpack pinout DS12333 - Rev 2 page 9/13 A1P50S65M2-F Package information 5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 5.1 ACEPACKTM 1 sixpack press fit pins package information Figure 21. ACEPACKTM 1 sixpack press fit pins package outline (dimensions are in mm) 32.00 E'W EW EV G4 E'V EU G6 28.80 E'U 25.60 G2 T1 T2 22.40 P 16.00 P 12.80 W U W V V G3 G5 6.40 U G1 3.20 0.00 16.40.50 120.35 0.00 6.40 3.20 9.60 16.00 22.40 19.20 25.60 3.2 BSC 33.80.3 28.10.2 2.3 REF Section B-B 19.40.2 8.5 16.40.2 1.30.2 B Detail A 530.1 42.50.2 480.3 410.2 62.80.5 3.2 BSC 36.8 REF B 2.50.2 A A 3.5 REF x45 4.50.1 GADG260220181307MT_8569715_4 * * * DS12333 - Rev 2 The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs. page 10/13 A1P50S65M2-F ACEPACKTM 1 sixpack press fit pins package information Figure 22. ACEPACKTM 1 sixpack press fit pins recommended PCB holes layout (dimensions are in mm) GADG260220181409MT_8569715_4 DS12333 - Rev 2 page 11/13 A1P50S65M2-F Revision history Table 7. Document revision history Date Revision 11-Oct-2017 1 Changes Initial release. Removed maturity status indication from cover page. The document status is production data. 01-Mar-2018 2 Updated silhouette in cover page, Figure 13. Inverter diode thermal impedance, Figure 14. IGBT thermal impedance and Section 5.1 ACEPACKTM 1 sixpack press fit pins package information. Minor text changes. DS12333 - Rev 2 page 12/13 A1P50S65M2-F IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2018 STMicroelectronics - All rights reserved DS12333 - Rev 2 page 13/13