VS-ST230C Series
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Phase Control Thyristors
(Hockey PUK Version), 410 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 410 A
VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V,
1600 V, 1800 V, 2000 V
VTM 1.69 V
IGT 90 mA
TJ-40 °C to +125 °C
Package A-PUK (TO-200AB)
Circuit configuration Single SCR
A-PUK (TO-200AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
410 A
Ths 55 °C
IT(RMS)
780 A
Ths 25 °C
ITSM
50 Hz 5700 A
60 Hz 5970
I2t50 Hz 163 kA2s
60 Hz 149
VDRM/VRRM 400 to 2000 V
tqTypical 100 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK AND OFF-STATE
VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM, MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST230C..C
04 400 500
30
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
18 1800 1900
20 2000 2100
VS-ST230C Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
double side (single side) cooled
410 (165) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 780
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5700
t = 8.3 ms 5970
t = 10 ms 100 % VRRM
reapplied
4800
t = 8.3 ms 5000
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
163
kA2s
t = 8.3 ms 148
t = 10 ms 100 % VRRM
reapplied
115
t = 8.3 ms 105
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1630 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.92 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.88 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.81
Maximum on-state voltage VTM Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.69 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Maximum (typical) latching current IL1000 (300)
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/μs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
μs
Typical turn-off time tqITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise
of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA
VS-ST230C Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
180 -
TJ = 25 °C 90 150 mA
TJ = 125 °C 40 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.9 -
VTJ = 25 °C 1.8 3.0
TJ = 125 °C 1.2 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.17
K/W
DC operation double side cooled 0.08
Maximum thermal resistance,
case to heatsink RthC-hs
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 % 4900
(500)
N
(kg)
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet A-PUK (TO-200AB)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.015 0.017 0.011 0.011
TJ = TJ maximum K/W
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.036
30° 0.060 0.060 0.060 0.061
VS-ST230C Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
40
50
60
70
80
90
100
110
120
130
0 40 80 120 160 200 240 280 320
30°
60° 90°
120°
180°
Conduction Angle
ST230C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500
DC
30°
60°
90°
120°
180°
Conduction Period
ST230C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°
120°
180°
Conduction Angle
ST230C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
DC
30°
60°
90°
120°
180°
Conduction Period
ST230C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W
thJ-hs
Average On-state Current (A)
Maximum Allowable Heatsink Temperature (°C)
0
100
200
300
400
500
600
700
800
900
1000
1100
0 100 200 300 400 500 600
180°
120°
90°
60°
30° RMS Limit
Conduction Angle
ST230C..C Series
T = 125°C
J
Maximum Allowable Heatsink Temperature (°C)
Average On-state Current (A)
0
200
400
600
800
1000
1200
1400
0 200 400 600 800 1000
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
ST230C..C Series
T = 125°C
J
VS-ST230C Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
2000
2500
3000
3500
4000
4500
5000
5500
110100
ST230C..C Series
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
0.01 0.1 1
Versus Pulse Train Duration. Control
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
ST230C..C Series
Initial Tj = 125°C
No Voltage Reapplied
Rated Vrrm Reapplied
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
ST230C..C Series
Tj = 25°C
Tj = 125°C
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z (K/W)
thJ-hs
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Steady State Value
R = 0.17 K/W
(Single Side Cooled)
R = 0.08 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST230C..C Series
VS-ST230C Series
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95074
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(2)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Device: ST230C..C Series
(3)(1) (4)
- Thyristor
- Essential part number
- 0 = converter grade
- C = ceramic PUK
- Voltage code x 100 = VRRM (see Voltage Ratings table)
- C = PUK case A-PUK (TO-200AB)
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
- Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
Device code
51 32 4 6 7 8 9
STVS- 23 0 C 20 C 1 -
2
3
4
5
6
7
8
9
1- Vishay Semiconductors product
Outline Dimensions
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A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
DIA. MAX. 0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
25° ± 5°
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
42 (1.65) MAX.
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
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