FQB50N06L / FQI50N06L
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
FQB50N 06L / FQI50N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V
• Low gate charge ( typical 24.5 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
!"
!
!
!"
"
"
!"
!
!
!"
"
"
Absolute Maximum Ratin gs TC = 25°C unless otherwise noted
Thermal Characteri stics
Symbol Parameter FQB50N06L / FQI50N06L Units
VDSS Drain-Source Voltage 60 V
IDDrain Current - Continuous (TC = 25°C) 52.4 A
- Continuous (TC = 100°C) 37.1 A
IDM Drain Current - Pulsed (Note 1) 210 A
VGSS Gate-Source Voltage ± 20 V
EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ
IAR Avalanche Current (Note 1) 52.4 A
EAR Repetitive Avalanche Energy (Note 1) 12.1 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns
PDPower Dissipation (TA = 25°C) * 3.75 W
Power Dissipation (TC = 25°C) 121 W
- Derate above 25°C 0.81 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 1.24 °C/W
RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
S
D
G
D2-PAK
FQB Series I2-PAK
FQI Series
GS
D
GS
D
October 2008
QFET
®
• RoHS Compliant
FQB50N06L / FQI50N06L
Rev. A2. Oct 2008©2008 Fairchild Semiconductor Corporation
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 300µH, IAS = 52.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 52.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Condit ions Min Typ Max Units
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = 250 µA60 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Vo ltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA
VDS = 48 V, TC = 150°C -- -- 10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
On Characteri st ics
VGS(th) Gate Threshold Volt age VDS = VGS, ID = 250 µA1.0 -- 2.5 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 26.2 A
VGS = 5 V, ID =26.2 A --
-- 0.017
0.020 0.021
0.025 Ω
gFS Forward Transconductance VDS = 25 V, ID = 26.2 A -- 40 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1250 1630 pF
Coss Output Capacitance -- 445 580 pF
Crss Reverse Transfer Capacit ance -- 90 120 pF
Switching Characteristics
td(on) Turn-On Delay T ime VDD = 30 V, ID = 26.2 A,
RG = 25 Ω
-- 20 50 ns
trTurn-On Rise Time -- 380 770 ns
td(off) Turn-Off De l a y Time -- 80 170 n s
tfTurn-Off Fa ll Time -- 145 300 n s
QgTotal Gate Ch a rge VDS = 48 V, ID = 52.4 A,
VGS = 5 V
-- 24.5 32 nC
Qgs Gate-Source Charge -- 6 -- nC
Qgd Gate-Drain Charge -- 14.5 -- nC
Drain-Source Diod e Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 52.4 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 210 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 52.4 A -- -- 1.5 V
trr Reverse Recovery Time VGS = 0 V, I S = 52.4 A,
dIF / dt = 100 A/µs
-- 65 -- ns
Qrr Reverse Recovery Charge -- 125 -- nC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
FQB50N06L / FQI50N06L
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
0 1020304050
0
2
4
6
8
10
12
VDS = 30V
VDS = 48V
! N ote : I D = 52.4A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
10-1 100101
0
1000
2000
3000
4000 Ciss = C gs + Cgd (C ds = shorted)
Coss = C ds + Cgd
Crss = Cgd
! Notes :
1. V GS = 0 V
2. f = 1 M Hz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
101
102
175"! No tes :
1. V GS = 0V
2. 2 5 0#s P ulse Test
25"
IDR , Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
VGS = 10V
VGS = 5V
! Note : T J = 25"
RDS(ON) [m$],
Drain-Source On-Resistance
ID, Drain Current [A]
0246810
100
101
102
175"
25"
-55"
! No te s :
1. V DS = 25V
2. 2 5 0#s P ulse Test
ID, Drain Current [A]
VGS, Gate-Source Voltage [V]
10-1 100101
100
101
102
V GS
T o p : 10 .0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
B o ttom : 3.0 V
! No te s :
1. 2 5 0#s P ulse Test
2. T C = 25"
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance C haracterist i cs Figure 6. Gate Charge Ch a ra ct eristics
Figu re 3. On-R esistan ce Variation vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ics
FQB50N06L / FQI50N06L
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
! Notes :
1. Z %JC(t ) = 1 .2 4 "/W Ma x.
2. D uty Factor , D =t1/t2
3. T JM - T C = P DM * Z%JC
(t)
s ingle pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Z%JC
(t), Therm al R esponse
t1, Square W ave Pulse Duration [sec]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
ID, Drain Current [A]
TC, Case Temperature ["]
10-1 100101102
100
101
102
103
DC
10 ms
1 ms
100 µs
Operation in This Area
is Lim ited by R DS(on)
! Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
! Note s :
1. VGS = 10 V
2. ID = 26.2 A
RDS(ON) , (N o rmalize d )
D rain-So urce O n-R esistance
TJ, Junction T em p erature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
!
Notes :
1 . VGS = 0 V
2 . ID = 250 #A
BV DSS , (Norm alized)
D rain-Source Breakdow n Voltage
TJ, Junction Tem perature [oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Br ea kdown Volta ge Variation
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Tr ansient Thermal Res pons e Cur ve
t1
PDM
t2
FQB50N06L / FQI50N06L
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
Gate Charge Test Circuit & Waveform
Resist iv e Swi tc hi ng Tes t Ci rcuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
Charge
VGS
5V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
Charge
VGS
5V Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50K&
200nF
12V
Same Type
as DUT
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
5V
VDS RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
5V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
FQB50N06L / FQI50N06L
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
Peak Diode Recovery dv/dt Test Circuit & Waveform s
DUT
VDS
+
_
Driver
RGSame Typ e
as DUT
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGSame Typ e
as DUT
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
FQB50N06L / FQI50N06L
©2008 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
Dimensions in Millimeters
Mechanical Dimensions
D2 - PAK
FQB50N06L / FQI50N06L
©2002 Fairchild Semiconductor Corporation Rev. A2. Oct 2008
Mechanical Dimensions
Dimensions in Millimeters
I2 - PAK
FQB50N06L / FQI50N06L
FQB50N06L / FQI50N06L Rev. A2www.fairchildsemi.com
Rev. I37
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.