EE-SB5M/SB5MC/SB5V/SB5VC/SB5V-EEE-SB5M/SB5MC/SB5V/SB5VC/SB5V-E
Specifications Table -- continued from previous page
Item Reflective
EE-SB5M EE-SB5MC EE-SB5V(-E) EE-SB5VC
Control output At 5 to 24 VDC: 80-mA load current (IC) with a residual voltage of 0.8 V max.
When driving TTL: 40-mA load current (IC) with a residual voltage of 0.4 V max.
Output
configuration Transistor on output stage
without detecting object OFF ON OFF ON
Transistor on output stage
with detecting object ON OFF ON OFF
Response frequency* 50 Hz
Connecting method EE-1001/1006 Connectors; soldering terminals
Light source GaAs infrared LED with a peak wavelength of 940 nm
Receiver Si photo-transistor with a sensing wavelength of 850 nm max.
*The response frequency was measured by detecting the following disks rotating.
Disk
15 mm 15 mm
15 mm
5mm
200 mm
dia.
CHARACTERISTICS
Ambient temperature Operating -25°Cto55
°C (-13°F to 131°F)
Storage -30°Cto80
°C (-22°F to 176°F)
Ambient humidity Operating 45% to 85%
Storage 35% to 95%
Vibration resistance Destruction: 20 to 2,000 Hz (with a peak acceleration of 20G’s), 1.5-mm double amplitude for
4 min each in X, Y, and Z directions
Shock resistance Destruction: 500 m/s2for 3 times each in X, Y, and Z directions
Soldering heat resistance 260°±5°C (See Note.) when the portion between the tip of the terminals and the position
1.5 mm from the terminal base is dipped into the solder for 10±1 seconds
Note: This conforms to MIL-STD-750-2031-1.