IRF5210
HEXFET® Power MOSFET
PD - 91434A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -4 0
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -2 9 A
IDM Pulsed Drain Current -140
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy780 mJ
IAR Avalanche Current-21 A
EAR Repetitive Avalanche Energy20 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance
VDSS = -100V
RDS(on) = 0.06Ω
ID = -40A
T
O
-22
0
AB
lAdvanced Process Technology
lUltra Low On-Resistance
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lP-Channel
lFully Avalanche Rated
Description
5/13/98
S
D
G
IRF5210
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -21A, VGS = 0V
trr Reverse Recovery Time ––– 170 260 ns TJ = 25°C, IF = -21A
Qrr Reverse Recovery Charge ––– 1.2 1.8 µ C di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 ΩVGS = -10V, ID = -24A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 10 ––– ––– S VDS = -50V, ID = -21A
––– ––– -25 µA VDS = -100V, VGS = 0V
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 180 ID = -21A
Qgs Gate-to-Source Charge ––– ––– 25 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 97 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 17 ––– VDD = -50V
trRise Time ––– 86 ––– ID = -21A
td(off) Turn-Off Delay Time ––– 79 ––– RG = 2.5 Ω
tfFall Time ––– 81 ––– RD = 2.4Ω, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 2700 ––– VGS = 0V
Coss Output Capacitance ––– 790 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 450 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤ -21A, di/dt ≤ -480A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
VDD = -25V, starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -21A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
-40
-140 A
S
D
G
S
D
G
IRF5210
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
D
DS
A
-I , Drain-to-S o urce Curre nt (A )
-V , D rain-to-S ource Voltage (V )
VGS
T OP - 15 V
- 10V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
B O TT O M - 4. 5V
-4 .5 V
40µ s PU LSE WIDTH
T = 2 5°C
c
1
10
100
1000
0.1 1 10 100
D
DS
A
-I , D rain -to-Sou rc e C urre nt (A )
-V , Dr a in-t o-So u rc e Vo lta
g
e
(
V
)
VGS
TOP - 15V
- 10V
- 8. 0V
- 7. 0V
- 6. 0V
- 5. 5V
- 5. 0V
BOTTOM - 4.5V
-4.5V
40
µ
s PU LSE WIDTH
T = 175°C
C
1
10
100
1000
45678910
T = 25°C
J
GS
D
A
-I , D rain-to-S ource Current (A)
-V , G a te-to -S ou rce V olta
g
e (V)
T = 175°C
V = -50V
40µs PULSE WID TH
DS
J
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Tem perature (°C)
R , Dra in - to-Sou r ce On Re s is tan c e
DS(on)
(Normalized)
A
V = -1 0 V
GS
I = -3 5 A
D
IRF5210
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
1000
2000
3000
4000
5000
6000
1 10 100
C , Capacitance (pF)
A
DS
-V , D ra in -to -So urce Volt a
g
e
(
V
)
V = 0V, f = 1 M Hz
C = C + C , C S H O RTED
C = C
C = C + C
GS
is s gs gd ds
rss gd
os s ds g d
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 40 80 120 160 200
G
GS
A
-V , G a te-to -Sou rc e V o ltag e (V )
Q , To ta l Ga te Ch a r
g
e
(
nC
)
V = -8 0 V
V = -5 0 V
V = -2 0 V
DS
DS
DS
FO R TE ST CIRCUIT
S EE FIG UR E 1 3
I = - 2 1A
D
1
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , R ev ers e D ra in C urre nt (A )
-V , S ourc e-to-Drain V oltage (V)
T = 175°C
J
1
10
100
1000
1 10 100 1000
O P ER A T IO N IN T H IS A R E A L IM IT E D
B Y R
DS(on)
10ms
A
-I , D ra in C u rren t (A )
-V , Dr a in- to -S o u rc e V o lta
g
e
(
V
)
DS
D
10µs
100µs
1ms
T = 25 °C
T = 17 5 °C
Sin
g
le P u ls e
C
J
IRF5210
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF5210
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(
BR
)
DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
V
DS
VDD
DRIVER A
15V
-20V
0
400
800
1200
1600
2000
25 50 75 100 125 150 175
J
E , S in gle Pu ls e A valanc he E n ergy (m J)
AS
A
Startin
g
T , J unction Tem perature
(
°C
)
I
T O P -8 .6A
-1 5 A
B OT TOM -21 A
D
IRF5210
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
VGS
IRF5210
LEAD ASSIGNMENTS
1 - G A T E
2 - D R A IN
3 - S O UR CE
4 - D R A IN
- B -
1 .32 (.05 2)
1 .22 (.04 8)
3X 0.55 (.022)
0.46 (.018)
2 .92 (.115)
2 .64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10 .54 (.415)
10 .29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0 .3 6 (.01 4) M B A M
4
1 2 3
NOTES:
1 D IMENSIONING & T OLERANCI N G PER ANSI Y14 . 5 M, 198 2 . 3 O UTL INE CONFORMS T O J EDEC O UTL INE T O- 22 0AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREM ENTS DO NOT INCLU DE BURRS.
PART NUMBER
INTERNATIONAL
RECT I F IER
L OGO
EXAMP LE : THIS IS AN IRF1010
W IT H AS SEMB LY
LOT C ODE 9 B1 M
ASSEMBLY
LO T CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9 B 1 M
A
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PART NU MB ER
INTERNATIONAL
RE CTIFIER
LOGO
EXA MP LE : THIS IS AN IRF1010
W ITH A SS EMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9 B 1 M
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
