IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
"%&$!"#™3 Power-Transistor
Features
Q#451<6? B89786B5AE5>3 ICG9D3 89>71>4CI>3 B53
Q( @D9=9J54D53 8>? <? 7I6? B 3 ? >F5BD5BC
Q H3 5<<5>D71D53 81B75HR9H"[Z#@B? 4E3 D ( &
Q.5BI<? G? >B5C9CD1>3 5+ 9H"[Z#
Q' 3 81>>5<>? B=1<<5F5<
Q 1F1<1>3 85D5CD54
Q)2 6B55@<1D9>7+ ? " ,3 ? =@<91>D
Q* E1<9695413 3 ? B49>7D? $ )#6? BD1B75D1@@<93 1D9? >C
Q" 1<? 75>6B5513 3 ? B49>7D? #
Maximum ratings, 1DTV T E><5CC? D85BG9C5C@53 96954
Parameter Symbol Conditions Unit
? >D9>E? EC4B19>3 EBB5>D I9T8 T *# )(( 6
T8 T )((
)E<C544B19>3 EBB5>D
*# I9$\aX_Q T8 T ,((
F1<1>3 855>5B7IC9>7<5@E<C5+# E6H I9 R=H "-)( Y@
!1D5C? EB3 5F? <D175 V=H q*( J
)? G5B49CC9@1D9? > P`[` T8 T *), K
( @5B1D9>71>4CD? B175D5=@5B1DEB5 TVT_`S T
# 3 <9=1D93 3 1D57? BI #' #
+#
, 55697EB5 6? B=? B545D19<549>6? B=1D9?
Z
Value
)#$ , - 1>4$ ,
*#, 55697EB5 6? B=? B545D19<549>6? B=1D9? >
V9H 0( J
R9H"[Z#$YMd +&- Y"
I9)(( 6
Product Summary
Type #)) ' ' ! #)# ' ' ! #) ' ' !
Package E=%ID**(%+ E=%ID*.*%+ E=%ID*.+%+
Marking (+/C(0C (+/C(0C (+-C(0C
@B5F9? EC5>79>55B9>73 ? 45
#) ' ' !
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
-85B=1<B5C9CD1>3 5:E>3 D9? >3 1C5 R`T@8 % % (&/ A'K
-85B=1<B5C9CD1>3 5 R`T@6 =9>9=1<6? ? D@B9>D
:E>3 D9? >1=2 95>D 3 =*3 ? ? <9>71B51,# % % ,(
Electrical characteristics, 1DTV T E><5CC? D85BG9C5C@53 96954
Static characteristics
B19>C? EB3 52 B51;4? G>F? <D175 V"7G#9HH V=H .I9 = 0( % % J
!1D5D8B5C8? <4F? <D175 V=H"`T# V9H4V=HI9 V * *&0 +&-
05B? 71D5F? <D1754B19>3 EBB5>D I9HH V9H .V=H .
TV T % (&) ) r6
V9H . V=H .
TV T % )( )((
!1D5C? EB3 5<51;1753 EBB5>D I=HH V=H .V9H . % ) )(( Z6
B19>C? EB3 5? >CD1D5B5C9CD1>3 5 R9H"[Z# V=H .I9 % +&) +&/- Y"
V=H .I9 % +&1 .&+
R9H"[Z# V=H .I9 % *&0 +&-
V=H .I9 % +&. .&(
!1D5B5C9CD1>3 5 R=% )&1 % "
I^MZ_O[ZPaO`MZOQ gR_
gV9Hg5*gI9gR9H"[Z#YMd
I9 /- ),1 % H
Values
,# 5F93 5? > ==H ==H ==5@? HI) + G9D8 3 =
*? >5<1I5B V =D893 ;3 ? @@5B1B516? B4B19>
3 ? >>53 D9? >) 9CF5BD93 1<9>CD9<<19B
B19>C? EB3 5? >CD1D5B5C9CD1>3 5
"HB9#
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
#>@ED3 1@13 9D1>3 5 CU__ % .)(( 0))( \<
( ED@ED3 1@13 9D1>3 5 C[__ % ).,( *)0(
+ 5F5BC5DB1>C65B3 1@13 9D1>3 5 C^__ % -1 %
-EB>? >45<1ID9=5 tP"[Z# % *+ % Z_
+ 9C5D9=5 t^% /1 %
-EB>? 6645<1ID9=5 tP"[RR# % ,- %
1<<D9=5 tR% ), %
!1D5 81B
S
5 81B13 D5B9CD93 C
-#
!1D5D? C? EB3 53 81B75 QS_ % +( % Z8
!1D5D? 4B19>3 81B75 QSP % )0 %
,G9D3 89>73 81B75 Q_c % +) %
!1D53 81B75D? D1< QS% 00 ))/
!1D5@<1D51EF? <D175 V\XM`QMa % -&( % J
( ED@ED3 81B75 Q[__ V99 . V=H . % ))1 )-0 Z8
Reverse Diode
9? 453 ? >D9>? EC6? BG1B43 EBB5>D IH% % )(( 6
9? 45@E<C53 EBB5>D IH$\aX_Q % % ,((
9? 456? BG1B4F? <D175 VH9 V=H .I<
TV T % )&( )&* J
+ 5F5BC5B53 ? F5BID9=5 t^^ % /+ % Z_
+ 5F5BC5B53 ? F5BI3 81B75 Q^^ % )+. % Z8
-#, 55697EB5 6? B71D53 81B75@1B1=5D5B4569>9D9? >
VG . I<4IH
Pi<'Pt V C
T8 T
Values
V=H .V9H .
f & " J
V99 . V=H .
I9 R= "
V99 . I9
V=H D? .
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
1 Power dissipation 2 Drain current
P`[`4R"T8#I94R"T8V=H" .
3 Safe operating area 4 Max. transient thermal impedance
I94R"V9HT8 T D4( Z`T@84R"t\#
@1B1=5D5Bt\@1B1=5D5BD4t\'T
V C
V C
V C
=C
=C
98
102
101
100
10-1
103
102
101
100
VDS [V]
ID[A]
<9=9D542 I? >CD1D5
^Q_U_`MZOQ
C9>7<5@E<C5
(&()
(&(*
(&(-
(&)
(&*
(&-
100
10-1
10-2
10-3
10-4
10-5
100
10-1
10-2
tp[s]
ZthJC [K/W]
0
50
100
150
200
250
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
120
0 50 100 150 200
TC[°C]
ID[A]
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I94R"V9HTV T R9H"[Z#4R"I9TV T
@1B1=5D5BV=H @1B1=5D5BV=H
7 Typ. transfer characteristics 8 Typ. forward transconductance
I94R"V=HKV9Hg5*gI9gR9H"[Z#YMd gR_4R"I9TV T
@1B1=5D5BTV
. . .
.
.
.
0
2
4
6
8
10
0 50 100 150 200
ID[A]
RDS(on) [m ]
T
T
0
50
100
150
200
250
300
02468
VGS [V]
ID[A]
0
50
100
150
200
0 50 100 150
ID[A]
gfs [S]
.
.
.
.
.
.
0
50
100
150
200
250
300
350
400
012345
VDS [V]
ID[A]
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R9H"[Z#4R"TVI9 V=H . V=H"`T#4R"TVV=H4V9H
@1B1=5D5BI9
11 Typ. capacitances 12 Forward characteristics of reverse diode
C4R"V9HV=H . f & " J I<4R"VH9#
@1B1=5D5BTV
`e\
YMd
0
2
4
6
8
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [m ]
V
V
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
8U__
8[__
8^__
104
103
102
101
0 20 40 60 80
VDS [V]
C[pF]
T
T
T =1H
T =1H
103
102
101
100
0 0.5 1 1.5 2
VSD [V]
IF[A]
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
13 Avalanche characteristics 14 Typ. gate charge
I6H4R"t6JR=H "V=H4R"QSM`QI9 @E<C54
@1B1=5D5BTV"_`M^`# @1B1=5D5BV99
15 Drain-source breakdown voltage 16 Gate charge waveforms
V7G"9HH#4R"TVI9 =
.
.
.
0
2
4
6
8
10
12
0 20 40 60 80 100
Qgate [nC]
VGS [V]
60
70
80
90
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
V
=H
Q
gate
V
S _"`T#
Q
S"`T#
Q
S _
Q
S P
Q
_c
Q
g
T
T
T
1
10
100
1000
0.1 1 10 100 1000
tAV [µs]
IAV [A]
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
PG-TO263-3 (D²-Pak)
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
PG-TO262-3 (I²-Pak)
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
PG-TO220-3
+ 5F @175
IPP037N08N3 G IPI037N08N3 G
IPB035N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
+ 5F @175
