Single Diode Schottky Barrier Diode D3FS6 M4 OUTLINE Package : 2F AY FR? 60V 3 A / Cathode mark Li zz (BP eogis : SMD Small SMD 8, F Io @Prasm//\Sl/2/ 0 {Ra Parsm Rating \ at 299A \y bd (A) F ms Type No. Class Date code 0 At vF VISE Switching Regulator 76 eDC/DCIVI\-F DC/DC Converter o Rae, TL,. OARS Home Appliance, Game, Office Automation || 38(8. K-49 LES Communication, Portable set 2 BtKX RATINGS bey | eed Unit?mm Weight 0.16g(Typ) FEI Tite ic Webtt 7 b tit CRUST Wax) OSI Favs, lOve RAILS CB F So, For details of the outline dimensions, refer to our web site or Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection". @@xtRAZH Absolute Maximum Ratings (##Oe MS T=25) i 4H aby : th % Hye Item Symbol| Conditions Bpene: Bases Unit (ere a 9 Storage Temperature Ts tg 55~ 150 Cc Tey bike . 9 Operation Junction Temperature Tj 150 Cc +f A SLE 7 Maximum Reverse Voltage Va 60 \ B00 RLEADH Fie #8 AGO.5ms, duty 1/40 r Flepetitive Peak Surge Reverse Voltage Vrrsm Pulse width 0.5ms, duty 1/40 65 V east, PVs PIM HJ ithe I 5OHz IESE, BULA A Ta=25 On alumina substrate 1,65 4 Average Rectified Forward Current o 50Hz sine wave, Resistance load 2 Ti=s87 3.0 4b AL 7 MTR i 50Hz Esk, JFARO LIA 2 eat A, Ti = 250 80 A Peak Surge Forward Current M 50Hz sine wave, Non-repetitive 1 cycle peak value, T)=25C #0 BLAM Py , ALO, T]=25C xr Repetitive Peak Surge Reverse Power | PRRSM | pulse width 10ps, Tj=25C 330 W @BRi- MAH Electrical Characteristics (#EDe VHA TI=25C) WLR = AAs 7 Forward Voltage Vr Ir = 3.0A, Pulse measurement MAX 0.58 V eA r= 20 Ae ! Reverse Current Tr Vr= VM. pulse measurement MAX 2.5 mA fr fit : IMU = 19 Seaie Capacitance Cj f= 1MHz, Va=10V TYP 130 pF F dee ib: 0 FB djl Junction to lead MAX 24 SL TE THEME fl Thermal Resistance c Se ri REAL On alumina substrate MAX 90 C/W Bia Junction to ambient Ti) y } ARE MAX 124 On glass-epoxy substrate 70 (J532-1) www.shindengen.co.jp/product/semilSmall SMD Single SBD D3FS6 Mist CHARACTERISTIC DIAGRAMS NET Tea Fat Fabward Voltage NFR 748 thee Forward Power Dissipation lA - moe PARTON iii Peak Surge Forward Current Capability Sime wave { 2 an = S oat! ! a z 3 "Toms Tome) =< We RA si cycle aE 5 Non-repetitiv tal 3a 3 E T=25C 2 17=159C(MAX) 3 3 hope 5 2 - T= 15N'C(TYP) a = cH oO ~ T= 25'C(MAX) e 2 Pi T= 25 = c 5 ca s war z lo 5 = g | 2 z {Pp ! p=p/T o 02 Ss Lad x [Pulse measurement) a T nae isc T T 2 al Forward Voltage Vr (V) Average Rectified Forward Current lo (A) Number of Cycles [cycle] ARE BAAR HeaR Reverse Current Reverse Power Dissipation St T= ISCUT TH SCT Ti Reverse Current Ir (mA) [Pulse measurement) Reverse Voltage Vr [V] 7 Pav ' i me D=tp/T j= lay Reverse Power Dissipation Pr [(W) Reverse Voltage Vr (VJ Junction Capacitance f=1MHz TiS Junction Capacitance Cj (pF) Reverse Voltage Vr [V] F4lF4yvINT Ta-lo Derating Curve Ta-lo On alumina substrate Substrate thickness G4" | 9 AEsE=ak= 0 Me LVR 1 Vr= SV a 4 D=tp/T Average Rectified Forward Current lo [A) Ambient Temperature Ta (C) F4lF4vINF Ti-lo Derating Curve T/-lo --Elo LWVe isi 1 Vee OV iat wee J D=tp/ Average Rectified Forward Current Io [A) Lead Temperature T/ (C) BORLA TAS ee Repetitive Surge Reverse Power Derating Curve ve Ver am 4 Tet ip: Pres =TRex Var PrrsM Derating (%) Operation Junction Temperature Tj (C) MOBLEAMY-VERARE Repetitive Surge Reverse Power Capability YR tip: Prea=IppxVap Ratio of Pres (tp) / Presm (tp=10us) Ol Pulse Width tp (ys) * Sine wave (i50Hz THE LT ET. * SOHz sine wave is used for measurements. + SAREE HIS eho THD ET, Typical SHANE SRL ET, * Semiconductor products generally have characteristic variation. Typical is a statistical average of the device's ability. www.shindengen.co.jp/product/semi/ (J532-1) 71