Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
1
Features:
Speziell entwickelt für beschaltungslosen
Betrieb Specially designed for snubberless operation
Niedrige Verluste, weiches A usschalten Low losses, soft recovery
Volle Sperrfähigkeit bei 140°C mit 50Hz Full blocking capability at 140°C with 50Hz
Hohes di/dt und niedriger Wärmewiderstand
durch NTV-Verbindung zwischen Silizium und
Mo-Trägerscheibe
High di/dt and low thermal resistance by
using low temperature-connection NTV
between silicon wafer and molybdenum
Elektroaktive Passivierung durch a-C:H Electroactive passivation by a-C:H
Elektrische Eigenschaften / Electrical properties
Höchst zul ässige Werte / Maximum rat ed val ues
Periodis che Spitzens perrspannung
repetiti ve peak reverse voltage Tvj = 0°C ... Tvj max
f = 50Hz VRRM 4500 V
Durchlaßstrom-Grenzeffektivwert
RMS forward current Tc = 60°C. f = 50Hz IFRMSM 2240 A
Dauergrenzstrom
mean f orward current TC = 85°C, f = 50Hz
TC = 60°C, f = 50Hz IFAVM 1140
1420 A
A
Stoßstrom-Grenzwert
surge forward current Tvj = Tvj max, Tp = 10ms IFSM 26 kA
Grenzlastintegral
I2t-value Tvj = Tvj max, Tp = 10ms I2t3,38 106A2s
Max. Ausschal tverluste
max. turn-of f losses IFM = 2500A, VCL = 2800V,
clamp circuit Lσ 0,25 µH, RCL = 68
CCL = 3µF, DCL = 34DSH65
Tvj = Tvj max
Wmax 4MW
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
2
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Charac t e ri stic values
Gleichsperrspannung
continuous direct reverse voltage failure rate λ < 100
estimate value VR(D) typ. 2800 V
Durchlaßspannung
forward voltage Tvj = Tvj max, iF = 2500A VFmax 4,2 V
Schleusenspannung
threshold vol tage Tvj = Tvj max V(TO) 1,7 V
Ersatzwiderstand
forward slope resistance Tvj = Tvj max rT1,0 m
Durchlaßrechenkennlinie 250 A iF 3200 A
On-stat e characteris tics f or calculat i on
()
VABiCi Di
FFF F
=++ ++ln 1
Tvj = Tvj max A
B
C
D
max.
0,600
-0,0000339
-0,0750
0,0851
Spitzenwert der Durchlaßverzögerungsspannung
peak value of forward recovery voltage Tvj = Tvj max, diF/dt = 5000A/µs
IFM = 4000A VFRM typ. 350 V
Sperrstrom
reverse current Tvj = Tvj max, vR = VRRM iR100 mA
Rückstromspitze
peak reverse rec o very current IRM max 1500 A
Sperrverzögerungsladung
recovered charge Qrmax 3500 µAs
Auss chaltverlust Energie
turn-off energy
IFM = 2500A, VCL = 2800V,
clamp circuit Lσ 0,25 µH, RCL = 68
CCL = 3µF, DCL = 34DSH65
Tvj = Tvj max Eoff 7,0 Ws
Abklingsanftheit
reverse recovery softness factor
max
0
)/( )/( dtdi dtdi
F
rf
irr
RRS =
=
IFM = 2500A, VR = 2800V
-dirr /dt(i=0) = 1000A/µs, dt = 200ns
Tvj = Tvj max ,
FRRS typ. 1,6
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
3
Thermische Eigenschaften / Thermal properties
Innerer Wärm ewiderstand
therm al resistanc e, junction to case Kühlfläche / cooling surface
beidseitig / two-sided, DC
Anode / anode, DC
Kathode /cathode, DC
RthJC max
max
max
0,0100
0,0178
0,0230
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
therm al resistanc e, case to heatsink Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single sided
RthCK max
max 0,003
0,006 °C/W
°C/W
Höchst zul ässige Sperrschicht temperatur
max. junction tem perature Tvj max 140 °C
Betriebstemperatur
operating temperature Tc op 0...+140 °C
Lagertemperatur
storage t emperature Tstg -40...+150 °C
Mechanische E i genschaften / Mechanical properti es
Gehäuse, s i ehe A nl age
case, see appendix Seite 3
Si - Element mit Druckkontakt
Si - pellet with pressure cont act 65DSH45
Anpreßkraft
clampig force F 27...45 kN
Gewicht
weight Gtyp 850 g
Kriechstrecke
creepage distance 30 mm
Luftstrecke
air dist ance 17 mm
Feuchteklasse
humidity classification DIN 40040 C
Schwingfestigkeit
vibration res i stance f = 50Hz 50 m/s2
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbidung mit den zugehörigen technischen Erläuterungen.
This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
4
Maßbild / Outline drawing
26
+-0.5
100 max
62
,
8
C
A
2 center holes
3.5 ×
××
×1.8
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
5
Durchlaßkennlinie / On-state characteristics iF = f ( VF )
upper limit of scatter range
0
500
1000
1500
2000
2500
3000
3500
012345
VF / [V]
Tvj = 140°CTvj = 25°C
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
6
Transienter innerer Wärmewiderstand
Transient thermal Impedance Z(th)JC = f (t)
Double side
cooled Anode side
cooled Cathode side
cooled
r [K/W] [s] r [K/W] [s] r [K/W] [s]
10,0054 0,509 0,0106 3,78 0,01656 3,766
20,00261 0,0869 0,00307 0,284 0,00151 0,386
30,00122 0,0156 0,00251 0,066 0,00314 0,0844
40,00074 0,00302 0,0011 0,00957 0,00114 0,0122
50,00003 0,000819 0,00052 0,00221 0,00065 0,00265
Σ0,01 - 0,0178 -0,023 -
(
)
å
= n
t
nthJCth n
eRtZ
τ
/
1)(
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
7
Stoßstrom / Grenzlastintegral Charakteristik
Surge current / I²t value characteristics
I FSM = f ( tp ) / i2 dt = f ( tp )
Sine half-wave, T vj =140 ° C , v R = 0
1,E+03
1,E+04
1,E+05
0,1 1 10 100
Time / [ms]
1,E+05
1,E+06
1,E+07
−−−−−
−−−−−
−−−−−
−−−−− ò
ò
ò
ò
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
8
Sperrverz öger ungsladung / recovere d char ge Qr = f ( - di/dt )
Upper limit of scatter range for VF = 3,8V @2500A, 140°C
Conditions: Tvj = 140 ° C
Parameter: IFM
clamping circuit CCL = 3 µF RCL = 6834DSH65
VCL = 2800 V
0
500
1000
1500
2000
2500
3000
3500
4000
0 100 200 300 400 500 600 700 800 900 1000
-di/ dt / [A/µs]
IFM =
2500A
1000A
500A
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
9
Rückstromspitze / peak reverse recovery current IRM = f ( - di/dt )
Upper limit of scatter range for VF = 3,8V @2500A, 140°C
Conditions: Tvj = 140 ° C
Parameter: IFM
clamping circuit CCL = 3 µF RCL = 6834DSH65
VCL = 2800 V
0
250
500
750
1000
1250
1500
1750
0 100 200 300 400 500 600 700 800 900 1000
-di /dt / [A s ]
IFM =
2500A
1000A
500A
100A
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
10
Ausschaltverlust Energie / turn-off energy Eoff = f ( - di/dt )
Upper limit of scatter range for VF = 3,8V @2500A, 140°C
Conditions: Tvj = 140 ° C
Parameter: IFM
clamping circuit CCL = 3 µF RCL = 6834DSH65
VCL = 2800 V
0
1
2
3
4
5
6
7
8
0 100 200 300 400 500 600 700 800 900 1000
-di/dt / [A/µs]
IFM =
2500A
1000A
500A
100A
Technische Information / Technical Information
Schnell e beschaltungs l ose Diode
Fast Hard Dri ve Di ode D 1031 SH 45T
BIP A C / 2001-09-17, Schnei der / Keller Release 2.1 Seite/ page
SH
11
Spitzen-Durchlassverzögerungsspannung
peak forward recovery voltage VFRM = f ( diF/dt )
typische Abhängigkeit / typical dependence
Tvj = 140°C, IFM = 4000A
0
100
200
300
400
0 1000 2000 3000 4000 5000 6000
diF
/
dt [A/µs]
V
FRM
[V]
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