M25PE40 4 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 25 MHz SPI Bus, Standard Pinout PRELIMINARY DATA FEATURES SUMMARY Industrial Standard SPI Pinout 4Mbit of Page-Erasable Flash Memory Page Write (up to 256 Bytes) in 11ms (typical) Page Program (up to 256 Bytes) in 1.2ms (typical) Page Erase (256 Bytes) in 10ms (typical) Sector Erase (512 Kbit) 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 25MHz Clock Rate (maximum) Deep Power-down Mode 1A (typical) Electronic Signature - JEDEC Standard Two-Byte Signature (8013h) More than 100,000 Write Cycles More than 20 Year Data Retention Hardware Write Protection of the Top Sector (64KB) Figure 1. Packages VDFPN8 (MP) 6x5mm (MLP8) 8 1 SO8 (MW) 208 mils width January 2005 1/37 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. M25PE40 TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Figure 2. Table 1. Figure 3. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 VDFPN and SO Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 SIGNAL DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Serial Data Output (Q) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Serial Data Input (D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Serial Clock (C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Chip Select (S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Reset (Reset) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Top Sector Lock (TSL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 SPI MODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 4. Bus Master and Memory Devices on the SPI Bus. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 5. SPI Modes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 OPERATING FEATURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Sharing the Overhead of Modifying Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 An Easy Way to Modify Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 A Fast Way to Modify Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Polling During a Write, Program or Erase Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Active Power, Standby Power and Deep Power-Down Modes . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 2. Status Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 MEMORY ORGANIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 3. Memory Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 6. Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 INSTRUCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 4. Instruction Set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Write Enable (WREN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 7. Write Enable (WREN) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Write Disable (WRDI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 8. Write Disable (WRDI) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Read Identification (RDID) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 5. Read Identification (RDID) Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/37 M25PE40 Figure 9. Read Identification (RDID) Instruction Sequence and Data-Out Sequence . . . . . . . . . . 14 Read Status Register (RDSR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 WEL bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 10.Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence . . . . . . . 15 Read Data Bytes (READ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 11.Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence . . . . . . . . . . . 16 Read Data Bytes at Higher Speed (FAST_READ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Figure 12.Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Page Write (PW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 13.Page Write (PW) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Page Program (PP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Figure 14.Page Program (PP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Page Erase (PE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Figure 15.Page Erase (PE) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Sector Erase (SE) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Figure 16.Sector Erase (SE) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Deep Power-down (DP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Figure 17.Deep Power-down (DP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Release from Deep Power-down (RDP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 18.Release from Deep Power-down (RDP) Instruction Sequence. . . . . . . . . . . . . . . . . . . . 23 POWER-UP AND POWER-DOWN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 19.Power-up Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Table 6. Power-Up Timing and VWI Threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 INITIAL DELIVERY STATE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Table 7. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 8. Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 9. AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 20.AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 10. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Table 11. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Table 12. AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Figure 21.Serial Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Figure 22.Top Sector Lock Setup and Hold Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Figure 23.Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Table 13. Reset Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Figure 24.Reset AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 3/37 M25PE40 Figure 25.MLP8, 8-lead Very thin Dual Flat Package No lead, 6x5mm, Package Outline . . . . . . . 33 Table 14. MLP8, 8-lead Very thin Dual Flat Package No lead, 6x5mm, Package Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Figure 26.SO8 wide - 8 lead Plastic Small Outline, 208 mils body width, Package Outline . . . . . . 34 Table 15. SO8 wide - 8 lead Plastic Small Outline, 208 mils body width, Mechanical Data . . . . . . 34 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 16. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 REVISION HISTORY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 17. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 4/37 M25PE40 SUMMARY DESCRIPTION Table 1. Signal Names The M25PE40 is a 4Mbit (512K x 8 bit) Serial Paged Flash Memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle. The memory is organized as 8 sectors, each containing 256 pages. Each page is 256 Bytes wide. Thus, the whole memory can be viewed as consisting of 2048 pages, or 524,288 Bytes. The memory can be erased a page at a time, using the Page Erase instruction, or a sector at a time, using the Sector Erase instruction. The top sector of the memories can be Write Protected by Hardware (TSL). C Serial Clock D Serial Data Input Q Serial Data Output S Chip Select TSL Top Sector Lock Reset Reset VCC Supply Voltage VSS Ground Figure 3. VDFPN and SO Connections Figure 2. Logic Diagram M25PE40 VCC D S Q TSL VSS Q C S 1 2 3 4 8 7 6 5 VCC Reset C D AI09703C M25PE40 TSL Reset VSS AI09704C Note: 1. There is an exposed die paddle on the underside of the MLP8 package. This is pulled, internally, to VSS, and must not be allowed to be connected to any other voltage or signal line on the PCB. 2. See PACKAGE MECHANICAL section for package dimensions, and how to identify pin-1. 5/37 M25PE40 SIGNAL DESCRIPTION Serial Data Output (Q). This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of Serial Clock (C). Select (S) Low selects the device, placing it in the Active Power mode. After Power-up, a falling edge on Chip Select (S) is required prior to the start of any instruction. Serial Data Input (D). This input signal is used to transfer data serially into the device. It receives instructions, addresses, and the data to be programmed. Values are latched on the rising edge of Serial Clock (C). Reset (Reset). The Reset (Reset) input provides a hardware reset for the memory. When Reset (Reset) is driven High, the memory is in the normal operating mode. When Reset (Reset) is driven Low, the memory will enter the Reset mode. In this mode, the output is high impedance. Driving Reset (Reset) Low while an internal operation is in progress will affect this operation (write, program or erase cycle) and data may be lost. Serial Clock (C). This input signal provides the timing of the serial interface. Instructions, addresses, or data present at Serial Data Input (D) are latched on the rising edge of Serial Clock (C). Data on Serial Data Output (Q) changes after the falling edge of Serial Clock (C). Chip Select (S). When this input signal is High, the device is deselected and Serial Data Output (Q) is at high impedance. Unless an internal Read, Program, Erase or Write cycle is in progress, the device will be in the Standby Power mode (this is not the Deep Power-down mode). Driving Chip 6/37 Top Sector Lock (TSL). This input signal puts the device in the Hardware Protected mode, when Top Sector Lock (TSL) is connected to VSS, causing the top 256 pages (upper addresses) of the memory to become read-only (protected from write, program and erase operations). When Top Sector Lock (TSL) is connected to VCC, the top 256 pages of memory behave like the other pages of memory. M25PE40 SPI MODES These devices can be driven by a microcontroller with its SPI peripheral running in either of the two following modes: - CPOL=0, CPHA=0 - CPOL=1, CPHA=1 For these two modes, input data is latched in on the rising edge of Serial Clock (C), and output data is available from the falling edge of Serial Clock (C). The difference between the two modes, as shown in Figure 5., is the clock polarity when the bus master is in Stand-by mode and not transferring data: - C remains at 0 for (CPOL=0, CPHA=0) - C remains at 1 for (CPOL=1, CPHA=1) Figure 4. Bus Master and Memory Devices on the SPI Bus SDO SPI Interface with (CPOL, CPHA) = (0, 0) or (1, 1) SDI SCK C Q D C Q D C Q D SPI Memory Device SPI Memory Device SPI Memory Device Bus Master (ST6, ST7, ST9, ST10, Others) CS3 CS2 CS1 S TSL RP S TSL RP S TSL RP AI10741B Note: The Top Sector Lock (TSL) signal should be driven, High or Low as appropriate. Figure 5. SPI Modes Supported CPOL CPHA 0 0 C 1 1 C D Q MSB MSB AI01438B 7/37 M25PE40 OPERATING FEATURES Sharing the Overhead of Modifying Data To write or program one (or more) data Bytes, two instructions are required: Write Enable (WREN), which is one Byte, and a Page Write (PW) or Page Program (PP) sequence, which consists of four Bytes plus data. This is followed by the internal cycle (of duration tPW or tPP). To share this overhead, the Page Write (PW) or Page Program (PP) instruction allows up to 256 Bytes to be programmed (changing bits from 1 to 0) or written (changing bits to 0 or 1) at a time, provided that they lie in consecutive addresses on the same page of memory. An Easy Way to Modify Data The Page Write (PW) instruction provides a convenient way of modifying data (up to 256 contiguous Bytes at a time), and simply requires the start address, and the new data in the instruction sequence. The Page Write (PW) instruction is entered by driving Chip Select (S) Low, and then transmitting the instruction Byte, three address Bytes (A23-A0) and at least one data Byte, and then driving Chip Select (S) High. While Chip Select (S) is being held Low, the data Bytes are written to the data buffer, starting at the address given in the third address Byte (A7-A0). When Chip Select (S) is driven High, the Write cycle starts. The remaining, unchanged, Bytes of the data buffer are automatically loaded with the values of the corresponding Bytes of the addressed memory page. The addressed memory page then automatically put into an Erase cycle. Finally, the addressed memory page is programmed with the contents of the data buffer. All of this buffer management is handled internally, and is transparent to the user. The user is given the facility of being able to alter the contents of the memory on a Byte-by-Byte basis. A Fast Way to Modify Data The Page Program (PP) instruction provides a fast way of modifying data (up to 256 contiguous Bytes at a time), provided that it only involves resetting bits to 0 that had previously been set to 1. This might be: - when the designer is programming the device for the first time - when the designer knows that the page has already been erased by an earlier Page Erase 8/37 - (PE) or Sector Erase (SE) instruction. This is useful, for example, when storing a fast stream of data, having first performed the erase cycle when time was available when the designer knows that the only changes involve resetting bits to 0 that are still set to 1. When this method is possible, it has the additional advantage of minimizing the number of unnecessary erase operations, and the extra stress incurred by each page. Polling During a Write, Program or Erase Cycle A further improvement in the write, program or erase time can be achieved by not waiting for the worst case delay (tPW, tPP, tPE, or tSE). The Write In Progress (WIP) bit is provided in the Status Register so that the application program can monitor its value, polling it to establish when the previous cycle is complete. Reset An internal Power-On Reset circuit helps protect against inadvertent data writes. Addition protection is provided by driving Reset (Reset) Low during the Power-on process, and only driving it High when VCC has reached the correct voltage level, VCC(min). Active Power, Standby Power and Deep Power-Down Modes When Chip Select (S) is Low, the device is selected, and in the Active Power mode. When Chip Select (S) is High, the device is deselected, but could remain in the Active Power mode until all internal cycles have completed (Program, Erase, Write). The device then goes in to the Standby Power mode. The device consumption drops to ICC1. The Deep Power-down mode is entered when the specific instruction (the Deep Power-down (DP) instruction) is executed. The device consumption drops further to ICC2. The device remains in this mode until the Release from Deep Power-down instruction is executed. All other instructions are ignored while the device is in the Deep Power-down mode. This can be used as an extra software protection mechanism, when the device is not in active use, to protect the device from inadvertent Write, Program or Erase instructions. M25PE40 Status Register The Status Register contains two status bits that can be read by the Read Status Register (RDSR) instruction. WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write, Program or Erase cycle. WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. Table 2. Status Register Format b7 0 b0 0 0 0 0 0 WEL WIP Note: WEL and WIP are volatile read-only bits (WEL is set and reset by specific instructions; WIP is automatically set and reset by the internal logic of the device). Protection Modes The environments where non-volatile memory devices are used can be very noisy. No SPI device can operate correctly in the presence of excessive noise. To help combat this, the M25PE40 features the following data protection mechanisms: Power On Reset and an internal timer (tPUW) can provide protection against inadvertent changes while the power supply is outside the operating specification. Program, Erase and Write instructions are checked that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution. All instructions that modify data must be preceded by a Write Enable (WREN) instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state by the following events: - Power-up - Reset (RESET) driven Low - Write Disable (WRDI) instruction completion - Page Write (PW) instruction completion - Page Program (PP) instruction completion - Page Erase (PE) instruction completion - Sector Erase (SE) instruction completion The Hardware Protected mode is entered when Top Sector Lock (TSL) is driven Low, causing the top 256 pages of memory to become read-only. When Top Sector Lock (TSL) is driven High, the top 256 pages of memory behave like the other pages of memory The Reset (Reset) signal can be driven Low to protect the contents of the memory during any critical time, not just during Power-up and Power-down. In addition to the low power consumption feature, the Deep Power-down mode offers extra software protection from inadvertent Write, Program and Erase instructions while the device is not in active use. 9/37 M25PE40 MEMORY ORGANIZATION The memory is organized as: 2048 pages (256 Bytes each). 524,288 Bytes (8 bits each) 8 sectors (512 Kbits, 65536 Bytes each) Each page can be individually: - programmed (bits are programmed from 1 to 0) - erased (bits are erased from 0 to 1) - written (bits are changed to either 0 or 1) The device is Page or Sector Erasable (bits are erased from 0 to 1). 10/37 Table 3. Memory Organization Sector Address Range 7 70000h 7FFFFh 6 60000h 6FFFFh 5 50000h 5FFFFh 4 40000h 4FFFFh 3 30000h 3FFFFh 2 20000h 2FFFFh 1 10000h 1FFFFh 0 00000h 0FFFFh M25PE40 Figure 6. Block Diagram Reset TSL High Voltage Generator Control Logic S C D I/O Shift Register Q Address Register and Counter Status Register 256 Byte Data Buffer 7FFFFh Top 256 Pages can be made read-only Y Decoder 6FFFFh 00000h 000FFh 256 Bytes (Page Size) X Decoder AI04042d 11/37 M25PE40 INSTRUCTIONS All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select (S) is driven Low. Then, the one-Byte instruction code must be shifted in to the device, most significant bit first, on Serial Data Input (D), each bit being latched on the rising edges of Serial Clock (C). The instruction set is listed in Table 4.. Every instruction sequence starts with a one-Byte instruction code. Depending on the instruction, this might be followed by address Bytes, or by data Bytes, or by both or none. In the case of a Read Data Bytes (READ), Read Data Bytes at Higher Speed (Fast_Read) or Read Status Register (RDSR) instruction, the shifted-in instruction sequence is followed by a data-out se- quence. Chip Select (S) can be driven High after any bit of the data-out sequence is being shifted out. In the case of a Page Write (PW), Page Program (PP), Page Erase (PE), Sector Erase (SE), Write Enable (WREN), Write Disable (WRDI), Deep Power-down (DP) or Release from Deep Powerdown (RDP) instruction, Chip Select (S) must be driven High exactly at a Byte boundary, otherwise the instruction is rejected, and is not executed. That is, Chip Select (S) must driven High when the number of clock pulses after Chip Select (S) being driven Low is an exact multiple of eight. All attempts to access the memory array during a Write cycle, Program cycle or Erase cycle are ignored, and the internal Write cycle, Program cycle or Erase cycle continues unaffected. Table 4. Instruction Set Instruction Description One-Byte Instruction Code Address Bytes Dummy Bytes Data Bytes WREN Write Enable 0000 0110 06h 0 0 0 WRDI Write Disable 0000 0100 04h 0 0 0 RDID Read Identification 1001 1111 9Fh 0 0 1 to 3 RDSR Read Status Register 0000 0101 05h 0 0 1 to READ Read Data Bytes 0000 0011 03h 3 0 1 to 0000 1011 0Bh 3 1 1 to FAST_READ Read Data Bytes at Higher Speed PW Page Write 0000 1010 0Ah 3 0 1 to 256 PP Page Program 0000 0010 02h 3 0 1 to 256 PE Page Erase 1101 1011 DBh 3 0 0 SE Sector Erase 1101 1000 D8h 3 0 0 DP Deep Power-down 1011 1001 B9h 0 0 0 Release from Deep Power-down 1010 1011 ABh 0 0 0 RDP 12/37 M25PE40 Write Enable (WREN) Page Erase (PE), and Sector Erase (SE) instruction. The Write Enable (WREN) instruction is entered by driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S) High. The Write Enable (WREN) instruction (Figure 7.) sets the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must be set prior to every Page Write (PW), Page Program (PP), Figure 7. Write Enable (WREN) Instruction Sequence S 0 1 2 3 4 5 6 7 C Instruction D High Impedance Q AI02281E Write Disable (WRDI) - - - - - - The Write Disable (WRDI) instruction (Figure 8.) resets the Write Enable Latch (WEL) bit. The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S) High. The Write Enable Latch (WEL) bit is reset under the following conditions: Power-up Write Disable (WRDI) instruction completion Page Write (PW) instruction completion Page Program (PP) instruction completion Page Erase (PE) instruction completion Sector Erase (SE) instruction completion Figure 8. Write Disable (WRDI) Instruction Sequence S 0 1 2 3 4 5 6 7 C Instruction D High Impedance Q AI03750D 13/37 M25PE40 The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code for the instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory, being shifted out on Serial Data Output (Q), each bit being shifted out during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 9.. The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at any time during data output. When Chip Select (S) is driven High, the device is put in the Standby Power mode. Once in the Standby Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. Read Identification (RDID) The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be read, followed by two Bytes of device identification. The manufacturer identification is assigned by JEDEC, and has the value 20h for STMicroelectronics. The device identification is assigned by the device manufacturer, and indicates the memory type in the first Byte (80h), and the memory capacity of the device in the second Byte (13h). Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. Table 5. Read Identification (RDID) Data-Out Sequence Device Identification Manufacturer Identification 20h Memory Type Memory Capacity 80h 13h Figure 9. Read Identification (RDID) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 28 29 30 31 C Instruction D Manufacturer Identification Device Identification High Impedance Q 15 14 13 MSB 3 2 1 0 MSB AI06809b 14/37 M25PE40 WIP bit. The Write In Progress (WIP) bit indicates whether the memory is busy with a Write, Program or Erase cycle. When set to 1, such a cycle is in progress, when reset to 0 no such cycle is in progress. Read Status Register (RDSR) The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register may be read at any time, even while a Program, Erase or Write cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write In Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register continuously, as shown in Figure 10.. The status bits of the Status Register are as follows: WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write, Program or Erase instruction is accepted. Figure 10. Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 C Instruction D Status Register Out Status Register Out High Impedance Q 7 MSB 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 MSB AI02031E 15/37 M25PE40 Read Data Bytes (READ) next higher address after each Byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes (READ) instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. The Read Data Bytes (READ) instruction is terminated by driving Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any Read Data Bytes (READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Data Bytes (READ) instruction is followed by a 3-Byte address (A23-A0), each bit being latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each bit being shifted out, at a maximum frequency fR, during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 11.. The first Byte addressed can be at any location. The address is automatically incremented to the Figure 11. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 C Instruction 24-Bit Address 23 22 21 D 3 2 1 0 MSB Data Out 1 High Impedance Q 7 6 5 4 3 2 Data Out 2 1 0 7 MSB AI03748D Note: Address bits A23 to A19 are Don't Care. 16/37 M25PE40 Read Data Bytes at Higher Speed (FAST_READ) next higher address after each Byte of data is shifted out. The whole memory can, therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ) instruction. When the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-Byte address (A23-A0) and a dummy Byte, each bit being latched-in during the rising edge of Serial Clock (C). Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each bit being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C). The instruction sequence is shown in Figure 12.. The first Byte addressed can be at any location. The address is automatically incremented to the Figure 12. Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence and Data-Out Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 C Instruction 24 BIT ADDRESS 23 22 21 D 3 2 1 0 High Impedance Q S 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 C Dummy Byte D 7 6 5 4 3 2 1 0 DATA OUT 2 DATA OUT 1 Q 7 MSB 6 5 4 3 2 1 0 7 MSB 6 5 4 3 2 1 0 7 MSB AI04006 Note: Address bits A23 to A19 are Don't Care. 17/37 M25PE40 data Bytes are guaranteed to be written correctly within the same page. If less than 256 Data Bytes are sent to device, they are correctly written at the requested addresses without having any effects on the other Bytes of the same page. Chip Select (S) must be driven High after the eighth bit of the last data Byte has been latched in, otherwise the Page Write (PW) instruction is not executed. As soon as Chip Select (S) is driven High, the selftimed Page Write cycle (whose duration is tPW) is initiated. While the Page Write cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Write cycle, and is 0 when it is completed. At some unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset. A Page Write (PW) instruction applied to a page that is Hardware Protected is not executed. Any Page Write (PW) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Page Write (PW) The Page Write (PW) instruction allows Bytes to be written in the memory. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Page Write (PW) instruction is entered by driving Chip Select (S) Low, followed by the instruction code, three address Bytes and at least one data Byte on Serial Data Input (D). The rest of the page remains unchanged if no power failure occurs during this write cycle. The Page Write (PW) instruction performs a page erase cycle even if only one Byte is updated. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data exceeding the addressed page boundary roll over, and are written from the start address of the same page (the one whose 8 least significant address bits (A7-A0) are all zero). Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 13.. If more than 256 Bytes are sent to the device, previously latched data are discarded and the last 256 Figure 13. Page Write (PW) Instruction Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 C Instruction 24-Bit Address 23 22 21 D 3 2 Data Byte 1 1 0 7 6 5 4 3 2 0 1 MSB MSB S 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 C Data Byte 2 D 7 6 5 4 3 2 MSB Data Byte 3 1 0 7 MSB 6 5 4 3 2 Data Byte n 1 0 7 6 5 4 3 2 1 0 MSB AI04045 Note: 1. Address bits A23 to A19 are Don't Care 2. 1 n 256 18/37 M25PE40 Bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the other Bytes of the same page. Chip Select (S) must be driven High after the eighth bit of the last data Byte has been latched in, otherwise the Page Program (PP) instruction is not executed. As soon as Chip Select (S) is driven High, the selftimed Page Program cycle (whose duration is tPP) is initiated. While the Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the selftimed Page Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset. A Page Program (PP) instruction applied to a page that is Hardware Protected is not executed. Any Page Program (PP) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Page Program (PP) The Page Program (PP) instruction allows Bytes to be programmed in the memory (changing bits from 1 to 0, only). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Page Program (PP) instruction is entered by driving Chip Select (S) Low, followed by the instruction code, three address Bytes and at least one data Byte on Serial Data Input (D). If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data exceeding the addressed page boundary roll over, and are programmed from the start address of the same page (the one whose 8 least significant address bits (A7-A0) are all zero). Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 14.. If more than 256 Bytes are sent to the device, previously latched data are discarded and the last 256 data Bytes are guaranteed to be programmed correctly within the same page. If less than 256 Data Figure 14. Page Program (PP) Instruction Sequence S 0 1 2 3 4 5 6 7 8 9 10 28 29 30 31 32 33 34 35 36 37 38 39 C Instruction 24-Bit Address 23 22 21 D 3 2 Data Byte 1 1 0 7 6 5 4 3 2 0 1 MSB MSB S 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 C Data Byte 2 D 7 6 5 4 3 2 MSB Data Byte 3 1 0 7 MSB 6 5 4 3 2 Data Byte n 1 0 7 6 5 4 3 2 1 0 MSB AI04044 Note: 1. Address bits A23 to A19 are Don't Care 2. 1 n 256 19/37 M25PE40 Page Erase (PE) latched in, otherwise the Page Erase (PE) instruction is not executed. As soon as Chip Select (S) is driven High, the self-timed Page Erase cycle (whose duration is tPE) is initiated. While the Page Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset. A Page Erase (PE) instruction applied to a page that is Hardware Protected is not executed. Any Page Erase (PE) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. The Page Erase (PE) instruction sets to 1 (FFh) all bits inside the chosen page. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Page Erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the instruction code, and three address Bytes on Serial Data Input (D). Any address inside the Page is a valid address for the Page Erase (PE) instruction. Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 15.. Chip Select (S) must be driven High after the eighth bit of the last address Byte has been Figure 15. Page Erase (PE) Instruction Sequence S 0 1 2 3 4 5 6 7 8 9 29 30 31 C Instruction D 24 Bit Address 23 22 2 1 0 MSB AI04046 Note: Address bits A23 to A19 are Don't Care. 20/37 M25PE40 struction is not executed. As soon as Chip Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is complete, the Write Enable Latch (WEL) bit is reset. A Sector Erase (SE) instruction applied to a sector that contains a page that is Hardware Protected is not executed. Any Sector Erase (SE) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Sector Erase (SE) The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the device sets the Write Enable Latch (WEL). The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the instruction code, and three address Bytes on Serial Data Input (D). Any address inside the Sector (see Table 3.) is a valid address for the Sector Erase (SE) instruction. Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 16.. Chip Select (S) must be driven High after the eighth bit of the last address Byte has been latched in, otherwise the Sector Erase (SE) inFigure 16. Sector Erase (SE) Instruction Sequence S 0 1 2 3 4 5 6 7 8 9 29 30 31 C Instruction D 24 Bit Address 23 22 2 1 0 MSB AI03751D Note: Address bits A23 to A19 are Don't Care. 21/37 M25PE40 Deep Power-down (DP) Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all Write, Program and Erase instructions. Driving Chip Select (S) High deselects the device, and puts the device in the Standby Power mode (if there is no internal cycle currently in progress). But this mode is not the Deep Power-down mode. The Deep Power-down mode can only be entered by executing the Deep Power-down (DP) instruction, subsequently reducing the standby current (from ICC1 to ICC2, as specified in Table 11.). Once the device has entered the Deep Powerdown mode, all instructions are ignored except the Release from Deep Power-down (RDP) instruction. This releases the device from this mode. The Deep Power-down mode automatically stops at Power-down, and the device always Powers-up in the Standby Power mode. The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 17.. Chip Select (S) must be driven High after the eighth bit of the instruction code has been latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as Chip Select (S) is driven High, it requires a delay of tDP before the supply current is reduced to ICC2 and the Deep Power-down mode is entered. Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 17. Deep Power-down (DP) Instruction Sequence S 0 1 2 3 4 5 6 7 tDP C Instruction D Stand-by Mode 22/37 Deep Power-down Mode AI03753D M25PE40 Release from Deep Power-down (RDP) Once the device has entered the Deep Powerdown mode, all instructions are ignored except the Release from Deep Power-down (RDP) instruction. Executing this instruction takes the device out of the Deep Power-down mode. The Release from Deep Power-down (RDP) instruction is entered by driving Chip Select (S) Low, followed by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the entire duration of the sequence. The instruction sequence is shown in Figure 18.. The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select (S) High. Sending additional clock cycles on Serial Clock (C), while Chip Select (S) is driven Low, cause the instruction to be rejected, and not executed. After Chip Select (S) has been driven High, followed by a delay, tRDP, the device is put in the Standby Power mode. Chip Select (S) must remain High at least until this period is over. The device waits to be selected, so that it can receive, decode and execute instructions. Any Release from Deep Power-down (RDP) instruction, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 18. Release from Deep Power-down (RDP) Instruction Sequence S 0 1 2 3 4 5 6 7 tRDP C Instruction D High Impedance Q Deep Power-down Mode Stand-by Mode AI06807 23/37 M25PE40 POWER-UP AND POWER-DOWN At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must follow the voltage applied on VCC) until VCC reaches the correct value: - VCC(min) at Power-up, and then for a further delay of tVSL - VSS at Power-down Usually a simple pull-up resistor on Chip Select (S) can be used to ensure safe and proper Power-up and Power-down. To avoid data corruption and inadvertent write operations during power up, a Power On Reset (POR) circuit is included. The logic inside the device is held reset while VCC is less than the Power On Reset (POR) threshold voltage, VWI - all operations are disabled, and the device does not respond to any instruction. Moreover, the device ignores all Write Enable (WREN), Page Write (PW), Page Program (PP), Page Erase (PE) and Sector Erase (SE) instructions until a time delay of tPUW has elapsed after the moment that VCC rises above the VWI threshold. However, the correct operation of the device is not guaranteed if, by this time, VCC is still below VCC(min). No Write, Program or Erase instructions should be sent until the later of: - tPUW after VCC passed the VWI threshold - tVSL after VCC passed the VCC(min) level These values are specified in Table 6. If the delay, tVSL, has elapsed, after VCC has risen above VCC(min), the device can be selected for READ instructions even if the tPUW delay is not yet fully elapsed. As an extra protection, the Reset (Reset) signal could be driven Low for the whole duration of the Power-up and Power-down phases. At Power-up, the device is in the following state: - The device is in the Standby Power mode (not the Deep Power-down mode). - The Write Enable Latch (WEL) bit is reset. Normal precautions must be taken for supply rail decoupling, to stabilize the VCC supply. Each device in a system should have the VCC rail decoupled by a suitable capacitor close to the package pins. (Generally, this capacitor is of the order of 0.1F). At Power-down, when VCC drops from the operating voltage, to below the Power On Reset (POR) threshold voltage, VWI, all operations are disabled and the device does not respond to any instruction. (The designer needs to be aware that if a Power-down occurs while a Write, Program or Erase cycle is in progress, some data corruption can result.) Figure 19. Power-up Timing VCC VCC(max) Program, Erase and Write Commands are Rejected by the Device Chip Selection Not Allowed VCC(min) Reset State of the Device tVSL Read Access allowed Device fully accessible VWI tPUW time 24/37 AI04009C M25PE40 Table 6. Power-Up Timing and VWI Threshold Symbol 1 Parameter Min. Max. Unit VCC(min) to S low 30 tPUW1 Time delay before the first Write, Program or Erase instruction 1 10 ms VWI1 Write Inhibit Voltage 1.5 2.5 V tVSL s Note: 1. These parameters are characterized only, over the temperature range -40C to +85C. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1 (each Byte contains FFh). All usable Status Register bits are 0. 25/37 M25PE40 MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not im- plied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 7. Absolute Maximum Ratings Symbol Parameter TSTG Storage Temperature TLEAD Lead Temperature during Soldering Min. Max. Unit -65 150 C See note 1 C VIO Input and Output Voltage (with respect to Ground) -0.6 4.0 V VCC Supply Voltage -0.6 4.0 V VESD Electrostatic Discharge Voltage (Human Body model) 2 -2000 2000 V Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK(R) 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU. 2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 ). 26/37 M25PE40 DC AND AC PARAMETERS ment Conditions summarized in the relevant tables. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC Characteristic tables that follow are derived from tests performed under the MeasureTable 8. Operating Conditions Symbol VCC TA Parameter Min. Max. Unit Supply Voltage 2.7 3.6 V Ambient Operating Temperature -40 85 C Min. Max. Unit Table 9. AC Measurement Conditions Symbol CL Parameter Load Capacitance 30 Input Rise and Fall Times pF 5 ns Input Pulse Voltages 0.2VCC to 0.8VCC V Input and Output Timing Reference Voltages 0.3VCC to 0.7VCC V Note: Output Hi-Z is defined as the point where data out is no longer driven. Figure 20. AC Measurement I/O Waveform Input Levels Input and Output Timing Reference Levels 0.8VCC 0.7VCC 0.3VCC 0.2VCC AI00825B Table 10. Capacitance Symbol COUT CIN Parameter Output Capacitance (Q) Input Capacitance (other pins) Test Condition Min. Max. Unit VOUT = 0V 8 pF VIN = 0V 6 pF Note: Sampled only, not 100% tested, at TA=25C and a frequency of 20 MHz. 27/37 M25PE40 Table 11. DC Characteristics Symbol Parameter Test Condition (in addition to those in Table 8.) Min. Max. Unit ILI Input Leakage Current 2 A ILO Output Leakage Current 2 A ICC1 Standby Current (Standby and Reset modes) S = VCC, VIN = VSS or VCC 50 A ICC2 Deep Power-down Current S = VCC, VIN = VSS or VCC 10 A ICC3 Operating Current (FAST_READ) C = 0.1VCC / 0.9.VCC at 25 MHz, Q = open 6 mA ICC4 Operating Current (PW) S = VCC 15 mA ICC5 Operating Current (SE) S = VCC 15 mA VIL Input Low Voltage - 0.5 0.3VCC V VIH Input High Voltage 0.7VCC VCC+0.4 V VOL Output Low Voltage IOL = 1.6 mA 0.4 V VOH Output High Voltage IOH = -100 A 28/37 VCC-0.2 V M25PE40 Table 12. AC Characteristics Test conditions specified in Table 8. and Table 9. Symbol fC Alt. fC fR Parameter Min. Typ. Max. Unit Clock Frequency for the following instructions: FAST_READ, PW, PP, PE, SE, DP, RDP, WREN, WRDI, RDSR D.C. 25 MHz Clock Frequency for READ instructions D.C. 20 MHz tCH (1) tCLH Clock High Time 18 ns tCL (1) tCLL Clock Low Time 18 ns 0.03 V/ns S Active Setup Time (relative to C) 10 ns S Not Active Hold Time (relative to C) 10 ns Clock Slew Rate 2 (peak to peak) tSLCH tCSS tCHSL tDVCH tDSU Data In Setup Time 5 ns tCHDX tDH Data In Hold Time 5 ns tCHSH S Active Hold Time (relative to C) 10 ns tSHCH S Not Active Setup Time (relative to C) 10 ns 200 ns tSHSL tCSH S Deselect Time tSHQZ (2) tDIS Output Disable Time 15 ns tCLQV tV Clock Low to Output Valid 15 ns tCLQX tHO Output Hold Time 0 ns tTHSL Top Sector Lock Setup Time 50 ns tSHTL Top Sector Lock Hold Time 100 ns tDP (2) S to Deep Power-down 3 s tRDP (2) S High to Standby Power mode 30 s tPW Page Write Cycle Time 11 25 ms tPP Page Program Cycle Time 1.2 5 ms tPE Page Erase Cycle Time 10 20 ms tSE Sector Erase Cycle Time 1 5 s Note: 1. tCH + tCL must be greater than or equal to 1/ fC 2. Value guaranteed by characterization, not 100% tested in production. 29/37 M25PE40 Figure 21. Serial Input Timing tSHSL S tCHSL tSLCH tCHSH tSHCH C tDVCH tCHCL tCHDX D Q MSB IN tCLCH LSB IN High Impedance AI01447C Figure 22. Top Sector Lock Setup and Hold Timing TSL tSHTL tTHSL S C D High Impedance Q AI07439c 30/37 M25PE40 Figure 23. Output Timing S tCH C tCLQV tCLQX tCLQV tCL tSHQZ tCLQX LSB OUT Q tQLQH tQHQL D ADDR.LSB IN AI01449D 31/37 M25PE40 Table 13. Reset Timings Test conditions specified in Table 8. and Table 9. Symbol Alt. tRLRH (1) tRST tRHSL tREC Parameter Min. Reset Pulse Width Reset Recovery Time Chip Select High to Reset High tSHRH Conditions Typ. Max. 10 s after any operation except for PW, PP, PE and SE 30 s After PW, PP and PE operations 25 ms After SE operations 5 s Chip should have been deselected before Reset is de-asserted 10 ns Note: 1. Value guaranteed by characterization, not 100% tested in production. Figure 24. Reset AC Waveforms S tSHRH Reset tRHSL tRLRH AI06808 32/37 Unit M25PE40 PACKAGE MECHANICAL Figure 25. MLP8, 8-lead Very thin Dual Flat Package No lead, 6x5mm, Package Outline D D1 E E1 E2 e b A D2 A2 L A1 A3 VDFPN-01 Note: Drawing is not to scale. Table 14. MLP8, 8-lead Very thin Dual Flat Package No lead, 6x5mm, Package Mechanical Data millimeters inches Symbol Typ. A Min. 0.85 A1 0.00 Max. Typ. 1.00 0.0335 0.05 A2 0.65 0.0256 A3 0.20 0.0079 b 0.40 D 6.00 0.2362 D1 5.75 0.2264 D2 3.40 E 5.00 0.1969 E1 4.75 0.1870 E2 4.00 e 1.27 L 0.60 0.35 3.20 3.80 0.48 3.60 4.20 0.0157 0.1339 0.1575 Min. Max. 0.0394 0.0000 0.0020 0.0138 0.0189 0.1260 0.1417 0.1496 0.1654 0.0197 0.0295 0.0500 0.50 0.75 12 0.0236 12 33/37 M25PE40 Figure 26. SO8 wide - 8 lead Plastic Small Outline, 208 mils body width, Package Outline A2 A C B CP e D N E H 1 A1 L SO-b Note: Drawing is not to scale. Table 15. SO8 wide - 8 lead Plastic Small Outline, 208 mils body width, Mechanical Data millimeters inches Symbol Typ Min A 0.10 A2 Min 0.25 0.20 0.35 0.45 - - CP Max 0.080 0.004 1.78 B 0.010 0.070 0.008 0.014 0.018 - - 0.10 0.004 D 5.15 5.35 0.203 0.211 E 5.20 5.40 0.205 0.213 - - - - H 7.70 8.10 0.303 0.319 L 0.50 0.80 0.020 0.031 0 10 0 10 N 8 e 34/37 Typ 2.03 A1 C Max 1.27 0.050 8 M25PE40 PART NUMBERING Table 16. Ordering Information Scheme Example: M25PE40 - V MP 6 T P Device Type M25PE = Page-Erasable Serial Flash Memory Device Function 40 = 4Mbit (512K x 8) Operating Voltage V = VCC = 2.7 to 3.6V Package MW = SO8 (208 mils width) MP = VDFPN8 6x5mm (MLP8) Device Grade 6 = Industrial: device tested with standard test flow over -40 to 85 C Option blank = Standard Packing T = Tape and Reel Packing Plating Technology blank = Standard SnPb plating P or G = RoHS compliant For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest ST Sales Office. 35/37 M25PE40 REVISION HISTORY Table 17. Document Revision History Date Version 01-Apr-2004 0.1 Document written 09-Nov-2004 1.0 Write Protect (W) pin replaced by Top Block Lock (TBL). Reset (Reset) description modified. Jedec signature modified. Reset timings tRLRH, tRHSL and tSHRH removed from Table 12., AC Characteristics and inserted in Table 13., Reset Timings (tRHSL modified). Document status promoted from Target Specification to Preliminary Data. 01-Dec-2004 2.0 Top Block Lock (TBL) renamed as Top Sector Lock (TSL). Small text changes. Deep Power-Down mode clarified in Active Power, Standby Power and Deep PowerDown Modes paragraph. 11-Jan-2004 3.0 Notes removed from Table 16., Ordering Information Scheme. Wording changes. SO16 package removed, SO8 Wide package added. 36/37 Description of Revision M25PE40 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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