APTC80DDA15T3G Dual Boost chopper VDSS = 800V RDSon = 150m max @ Tj = 25C ID = 28A @ Tc = 25C Super Junction MOSFET Power Module Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction 13 14 CR1 CR2 23 8 Features * Q2 Q1 26 4 27 3 29 30 31 15 16 R1 28 27 26 25 * * 32 23 22 * * 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 800 28 21 110 30 150 277 17 0.5 670 Unit V A July, 2006 7 V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC80DDA15T3G - Rev 1 22 APTC80DDA15T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 800V VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = 20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IF VF Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ 4507 2092 108 180 Inductive switching @125C VGS = 15V VBus = 533V ID = 28A R G = 2.5 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Test Conditions VR=1000V IF = 60A VR = 667V di/dt=200A/s Max Unit A m V nA pF nC 10 13 83 486 J 278 850 J 342 Typ Tj = 25C Tj = 125C Max 250 500 Tj = 125C 60 1.9 2.2 1.7 Tj = 25C 280 Tj = 125C Tj = 25C 350 760 Tj = 125C 3600 www.microsemi.com ns 35 Min 1000 T c = 100C IF = 60A IF = 120A IF = 60A Unit 90 DC Forward Current Diode Forward Voltage 3 Max 50 375 150 3.9 150 22 Chopper diode ratings and characteristics IRM 2.1 VGS = 10V VBus = 400V ID = 28A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Tj = 25C Tj = 125C VGS = 0V,VDS = 800V Unit V A A 2.5 V July, 2006 IDSS Characteristic ns nC 2-6 APTC80DDA15T3G - Rev 1 Symbol APTC80DDA15T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M4 2500 -40 -40 -40 2.5 RT = Min R 25 Unit C/W V 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Max 0.45 0.9 Typ 50 3952 Max C N.m g Unit k K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTC80DDA15T3G - Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTC80DDA15T3G Thermal Impedance (C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 100 VGS=15&10V 6.5V 60 50 6V 40 5.5V 30 5V 20 4.5V 10 60 40 TJ =25C 20 TJ =125C 4V 0 T J=-55C 0 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 30 Normalized to V GS=10V @ 14A 1.3 ID, DC Drain Current (A) VGS=10V 1.2 VGS=20V 1.1 1 0.9 25 20 15 10 5 0 0 10 20 30 40 I D, Drain Current (A) 50 60 25 50 75 100 125 150 July, 2006 0.8 TC, Case Temperature (C) www.microsemi.com 4-6 APTC80DDA15T3G - Rev 1 RDS(on) Drain to Source ON Resistance V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 80 ID, Drain Current (A) ID, Drain Current (A) 70 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) 1.0 0.9 0.8 100 0 50 100 0 1 1000 Coss Crss 100 10 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=28A T J=25C 14 V DS =160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 40 80 120 160 200 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) Ciss 1ms Single pulse TJ =150C TC=25C 1 TC, Case Temperature (C) 10000 100s 100ms 150 Capacitance vs Drain to Source Voltage 100000 limited by RDSon 10 0.7 -50 C, Capacitance (pF) V GS=10V ID= 14A www.microsemi.com 5-6 APTC80DDA15T3G - Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80DDA15T3G APTC80DDA15T3G Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 V DS=533V RG=2.5 T J=125C L=100H 60 40 t r and tf (ns) t d(on) 20 30 VDS=533V RG=2.5 T J=125C L=100H 20 10 0 0 10 20 30 40 I D, Drain Current (A) 50 10 1200 Switching Energy (J) Eon 900 600 50 Eoff 300 V DS=533V ID=28A T J=125C L=100H 2000 1500 Eon 1000 Eon Eoff 500 0 0 10 20 30 40 I D, Drain Current (A) 0 50 Operating Frequency vs Drain Current 350 ZVS 300 250 200 Hard switching 150 100 IDR , Reverse Drain Current (A) 400 VDS=533V D=50% RG=2.5 TJ=125C TC=75C ZCS 50 0 6 5 10 15 20 Gate Resistance (Ohms) 25 Source to Drain Diode Forward Voltage 1000 100 T J=150C 10 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) T J=25C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 July, 2006 Eon and Eoff (J) 2500 VDS=533V RG=2.5 TJ=125C L=100H 20 30 40 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 1500 Frequency (kHz) tr APTC80DDA15T3G - Rev 1 td(on) and td(off) (ns) t d(off) 80