HMC8802 - ANALOG DEVICES - Product.Network

MMIC Digital Attenuator

DC-13GHz Die

ADH424S

ASD0016560 Rev. C

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1.0 SCOPE

This specification documents the detail requirements for space qualified die per MIL-PRF-38534 class K

except as modified herein.

The manufacturing flow described in the SPACE DIE BROCHURE is to be considered a part of this

specification.

This datasheet specifically details the space grade version of this product. A more detailed operational

description and a complete datasheet for commercial product grades can be found at

www.analog.com/HMC424

2.0 Part Number. The complete part number(s) of this specification follow:

Part Number Description

HMC8802 MMIC Digital Attenuator, DC-13GHz Die

3.0 Die Information

3.1 Die Dimensions

Die Size Die Thickness Bond Pad Metalization

33 mil x 57 mil 4 mil ± 0.5 mil Au

3.2 Die Picture

1. RF1 (DC coupled, matched to 50 ohms)*

2. VEE (Supply Voltage, -5V ±10%)

3. RF2 (DC coupled, matched to 50 ohms)*

4. V1

5. V2

6. V3

7. V4

8. V5

9. V6

Die bottom must be connected to RF GND

 *Blocking capacitors are required if RF line

potential is not equal to 0V

ADH424S

ASD0016560 Rev. C | Page 2 of 4

Control Voltage Input Attenuation

State RF1 – RF2

(16 dB)

(8 dB)

(4 dB)

(2 dB)

(1 dB)

(0.5 dB)

Low Low Low Low Low Low Reference I.L.

Low Low Low Low Low High 0.5 dB

Low Low Low Low High Low 1 dB

Low Low Low High Low Low 2 dB

Low Low High Low Low Low 4 dB

Low High Low Low Low Low 8 dB

High Low Low Low Low Low 16 dB

High High High High High High 31.5 dB

Note: Any combination of the above states will provide an attenuation approximately equal to the sum of the bits selected

3.3 Absolute Maximum Ratings 1/

Control Voltage Range ........................................................ VEE - 0.5 VDC

Bias Voltage (VEE) ........................................................................ -7 VDC

Channel Temperature ....................................................................... 150C

RF Input Power (0.5 to 13 GHz) .................................................. +25 dBm

Thermal Resistance (Junction to Die Bottom) ............................. 330C /W

Ambient Operating Temperature Range (TA)..................... -40C to +85C

Storage Temperature ........................................................ -65C to +150C

Absolute Maximum Ratings Notes:

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum

levels may degrade performance and affect reliability.

4.0 Die

Qualification

In accordance with class-K version of MIL-PRF-38534, Appendix C, Table C-II, except as modified

Herein.

(a) Pre-screen test post assembly required prior to die qualification, to remove all assembly related

rejects.

(b) Mechanical Shock or Constant Acceleration not performed; die qualification is performed in an

open carrier.

Table I - Dice Electrical Characteristics

Parameter Symbol

Conditions

1/, 2/, 3/, 4/

50 Ω System

Limit

Min

Limit

Max Units

Insertion Loss IL DC – 8.0 GHz

8 – 13.0 GHz

3.8

4.6 dB

Attenuation Range AR DC – 13.0 GHz 29.3 33.7 dB

Return Loss (RF1 & RF2 All Attenuation States) RL DC – 8.0 GHz

8 – 13.0 GHz

9 dB

Attenuation Accuracy: (Referenced to Insertion

Loss)

0.5 -7.5 dB States

8 – 31.5 dB States

Acc DC – 13.0 GHz

DC – 13.0 GHz

±0.3 +4% of Atten Setting Max

±0.3 + 6% of Atten Setting Max

IEE IEE DC – 13 GHz 4 mA

Table I Notes:

1/ Limits apply at +25C only.

2/ Tested with VEE = -5V, V1-V6 Low = -3V, High = -4.2V

3/ S-par data to be tabulated at 250 MHz, 1 GHz, 3 GHz, 5 GHz, 9 GHz, 11 GHz, and 13 GHz. Pin = -25 dBm

4/ Measure major attenuation states only

ADH424S

ASD0016560 Rev. C | Page 3 of 4

Table II - Electrical Characteristics for Qual Samples

Parameter Symbol

Conditions 1/ 2/ 3/ 4/ 5/ 6/

-40°C ≤ TA ≤ 85°C unless

otherwise specified, 50

Ohm System

Sub-

groups

Min

Limit

Max

Limit Units

Insertion Loss IL DC – 8.0 GHz 4,5,6 3.8 dB

8.0 – 13.0 GHz 4,5,6 4.6

Attenuation Range AR DC – 13.0 GHz 4,5,6 29.3 33.7 dB

Return Loss (RF1 & RF2 All Attenuation States) RL DC – 8.0 GHz 4,5,6 8 dB

8.0 – 13.0 GHz 4,5,6 10

Attenuation Accuracy: (Referenced to Insertion

Loss)

0.5 - 7.5dB States

8 – 31.5 dB States

Acc

DC – 13 GHz

DC – 13 GHz 4,5,6

±0.3 + 4% of

Atten. Setting

Max dB

DC – 13 GHz

DC – 13 GHz 4,5,6

±0.3 + 6% of

Atten. Setting

Max

Input Power for 0.1dB Compression (REF State) IP0.1dB 1.0 – 13.0 GHz 4 22 dBm

5,6 17

Input Third Order Intercept Point (REF State)

Two-Tone Input Power = 0dBm each tone, 1MHz

tone separation

IIP3 1.0 – 13.0 GHz

4 38

dBm

5,6 34

IEE IEE DC – 13 GHz 4,5,6 5 mA

Table II Notes:

1/ Pre burn-in and Post burn-in electrical require S-parameter testing only as defined. Final electrical tests shall incorporate power tests as defined.

2/ Temperature testing required for Final Electrical testing only

3/ Tested with VEE = -5V, V1-V6 Low = -3V, High = -4.2V

4/ Measure major attenuation states only

5/ S-par data to be tabulated at 250 MHz, 1 GHz, 3 GHz, 5 GHz, 9 GHz, 11 GHz, and 13 GHz. Pin = -25 dBm

6/ P0.1dB and IP3 shall be tabulated at 1 GHz, 3 GHz, 5 GHz, 9 GHz, and 11 GHz

Table III - Endpoint and Delta Limits (+25°C)

(Product is tested in accordance with Table II with the following exceptions)

Parameter Sub-

groups

End-point Delta Units

Min Max

Insertion Loss 4 4.6 ±1.0 dB

IEE (Biased at -5V) 1 5 ±10 %

Table III Notes:

1/ Table II limits will not be exceeded

2/ 240 hour burn in and Group C end point electrical parameters. Deltas are performed at TA = 25°C

ADH424S

ASD0016560 Rev. C | Page 4 of 4

5.0 Die Outline

Rev Description of Change Date

A Initiate 26-October-2015

B Added Clarification to sections 3.2, 3.3 and 5.0. Adding IEE parameter to

Tables I and II. Remove symbol Column from Tables I, II and III 11-December-2015

Add note to clarify exception for temperatures for interim and post burn-in

electrical tests. Remove exception notes for maximum die qual temperature

and for sample size and qual acceptance criteria.

4-June-2019

1. RF1 (DC coupled, matched to 50 ohms)*

2. VEE (Supply Voltage, -5V ±10%)

3. RF2 (DC coupled, matched to 50 ohms)*

4. V1

5. V2

6. V3

7. V4

8. V5

9. V6

Die bottom must be connected to RF GND

 *Blocking capacitors are required if RF line

potential is not equal to 0V

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Printed in the U.S.A. 6/19