Rev. 0.2 10/08 Copyright © 2008 by Silicon Laborato ries Si50x-32x4-EVB
Si50x-32x4-EVB
EVALUATION BOARD FOR THE Si50X 3.2X4.0 MM
SILICON OSCILLATORS
Description
This document describes the operation of the Silicon
Laboratories Si50x-32x4-EVB Rev 2.0 evaluation board
to evaluate Silicon Laboratories' Si50x Silicon
Oscillators in the 3.2x4.0 mm package. Devices
currently available include the single-ended output
Si500S and the differential output Si500D. The Si50x
utilizes Silicon Laboratories' ultra stable silicon oscillator
technology to achieve an inexpensive low jitter clock
source. This unique oscillator technology is factory
programmed to support any frequency between
900 kHz and 200 MHz. Unlike traditional XOs that
require a unique quartz crystal resonator to generate
each frequency, the Si50x uses programmable,
compensated silicon oscillator architecture that is
capable of operating over a wide range of output
frequencies. In addition, Silicon Lab's compensated
silicon oscillator provides stability comparable to fixed
frequency crystal based oscillators. The Si50x is factory
configurable for a wide variety of user specifications
including frequency, supply voltage, output format,
output drive strength, and OE behavior. Specific
configurations are factory programmed at time of
shipment, thereby eliminating long lead times
associated with custom oscillators.
Si50x samples should be ordered at the same time as
the Si50x-32x4-EVB since the EVB does not come with
the device. This allows end users maximum flexibility.
Silicon Laboratories can solder down samples when
ordering an EVB; please specify when ordering.
Features
Evaluation of Silicon Laboratories' Si50x devices
Stuffing options support dc or ac coupled single-
ended or differential output clocks
Supports output signal formats: CMOS, HCSL, Low
Power LVPECL, LVDS, LVPECL, or SSTL
Jumper selections for OE and MODE (reserved for
future use)
Functional Block Diagram
Pow e r Inp ut
Si50x
Devi ce
Confi guratio n
Jumpers
Output
Bias
DC
Block
CLK+
CLK-
Si50x-32x4-EVB
2 Rev. 0.2
1. Functional Description
The Si50x-32x4-EVB provides access to all I/O signals
for configuring, operating, and testing the device.
Jumpers and test points are provided as described
below.
1.1. Power Supply
The Si50x supports operation from nominal voltages of
1.8, 2.5, and 3.3 V. Supply VDD and GND are wired in
at the J1 ± terminals. Review the device data sheet and
part number for allowed configurations of output buffer
type and device power supply.
1.2. Jumpers
The jumpers at JP1 and JP2 allow one to pull up or pull
down OE or MODE to VDD or GND. (The MODE signal
is reserved for future use. It is not used by either the
Si500S or the Si500D.) The current silkscreen for these
jumpers is reproduced in Figure 1.
Figure 1. Jumpers Silkscreen
Pins 1 and 2 in Figure 1 refer respectively to the Si50x's
OE and MODE pins. The jumper positions are
illustrated in Figure 2.
The Si50x can be ordered with the OE pin pulled to the
desired state, so the JP1 jumper would typically be
needed only to access the opposing state.
Figure 2. JP1–JP2 Jumper Positions
1.3. Preparing the EVB
By default, the evaluation board is set up to support ac-
coupling of differential mode configured devices (i.e.,
Low Power LVPECL, LVDS, and SSTL). The stuffing
variations for the supported output modes are tabulated
in Table 1.
1.3.1. LVPECL Biasing
Because the Si50x can support an LVPECL buffer type
(in addition to CMOS, HCSL, LVDS, or SSTL), pulldown
resistor locations (R1 and R4) are available for proper
output biasing. For LVPECL buffers, correct biasing can
be achieved through a variety of equivalent circuits; the
Si50x-32x4-EVB allows for a commonly used
approximation using pulldown resistors. After the output
biasing, the high-speed outputs are dc-blocked for
connection to differently biased inputs such as standard
test equipment.
1.4. Test Points
There are 4 through-hole test points as follows:
TP1—VDD
TP2—Output CLK_N
TP3—GND
TP4—Output CLK
Test point TP1 is located near terminal J1. Test points
TP2–TP4 are located in between the output connectors.
JP1, Force OE high
JP1, Force OE low
JP2, Force Mode high
JP2, Force Mode low
Table 1. Stuffing Variations
Driver R1, R4 C2, C3 J2, J4 Instrument
Termination
CMOS empty empty empty Active scope
probes*
HCSL empty 0.1 µF filled HI-Z
Low Power
LVPECL
empty 0.1 µF filled 50
LVDS empty 0.1 µF filled 50
LVPECL 2.5 V 100 0.1 µF filled 50
LVPECL 3.3 V 200 0.1 µF filled 50
SSTL empty 0.1 µF filled 50
*Note: Use of Coax and 50 termination produces good
signal integrity but incorrect signal levels and power;
use of Coax and Hi-Z produces extremely bad signal
integrity.
Si50x-32x4-EVB
Rev. 0.2 3
2. Schematics
Figure 3. Si50x-32x4-EVB Schematic
VDD
VDD
VDD
Dual footprint that
allows support for
either a SMA or
BNC connector.
C2
0.1uF
C2
0.1uF
C1
0.1uF
C1
0.1uF
R3
1K
R3
1K
TP2
CLKN
Blue
TP2
CLKN
Blue
R2
1K
R2
1K
TP3
GND
Black
TP3
GND
Black
J4
BNC
J4
BNC
FB1
BLM31PG391
FB1
BLM31PG391
J6
SMA
J6
SMA
J5
SMA
J5
SMA
R4
100
R4
100
TP1
VDD
Red
TP1
VDD
Red
R1
100
R1
100
J1J1
1
2
U1
Si500D
U1
Si500D
OE
1
NC
2
GND
3CLK 4
CLK_N 5
VDD 6
C3
0.1uF
C3
0.1uF
JP2
HEADER 1x3
JP2
HEADER 1x3
1
2
3
JP1
HEADER 1x3
JP1
HEADER 1x3
1
2
3
J2
BNC
J2
BNC
TP4
CLK
Blue
TP4
CLK
Blue
Si50x-32x4-EVB
4 Rev. 0.2
3. Bill of Materials
Item Qty Reference Description Manufacturer's # Manufacturer
1 3 C1,C2,C3 0.1 µF, 10V, ±20%, X7R, C0603 C0603X7R100-104M Venkel
2 1 FB1 BLM31PG391, 3000mA, SMT, L1206 BLM31PG391SN1 MuRata
3 2 JP1,JP2 HEADER 1x3, Header, CONN-1X3 TSW-103-07-T-S Samtec
4 1 J1 CONN TRBLK 2,CONN-1X2-TB 1729018 Phoenix Contact
52R2,R31k, 1/10 W, ±1%, ThickFilm, R0603 CR0603-10W-1001F Venkel
6 1 TP1 Test Point, Red, TESTPOINT 151-207 Kobiconn
7 2 TP2,TP4 Test Point, Blue, TESTPOINT 151-205 Kobiconn
8 1 TP3 Test Point, Black, TESTPOINT 151-230 Kobiconn
9 2 J5,J6 SMA, RF, CONN-SMA-RT 142-0701-301 Johnson Components
No Load
10 2 J2,J4 BNC, CONN-BNC_RT 5413631-1 Tyco
11 2 R1,R4 100 , 1/16 W, ±1%, ThickFilm, R0603 CR0603-16W-1000F Venkel
12 1 U1 Si500 Si500 Silicon Laboratories
Si50x-32x4-EVB
Rev. 0.2 5
4. Layout
Figure 4. Assembly Drawing
Figure 5. Layer 1 Primary
Figure 6 . Layer 2 Secondary
Si50x-32x4-EVB
6 Rev. 0.2
DOCUMENT CHANGE LIST
Revision 0.1 to Revision 0.2
Revised text, schematic, layout, and BOM to reflect
Si50x-32x4-EVB Rev. 2.0 instead of Rev. 1.0.
Si50x-32x4-EVB
Rev. 0.2 7
NOTES:
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using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific
device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Laboratories
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or completeness of the included information. Silicon Laboratories shall have no liability for the consequences of use of the information supplied herein. This document does not imply
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