2SK3698-01 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 900 VDSX *5 900 ID 3.7 ID(puls] 14.8 VGS 30 IAR *2 3.7 EAS *1 171.1 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25C 2.02 Tc=25C 120 Tch +150 -55 to +150 Tstg *1 L=22.9mH, Vcc=90V, Tch=25C See to Avalanche Energy Graph *3 IF< = BVDSS, Tch < = 150C *4 VDS<= 900V = -ID, -di/dt=50A/s, Vcc < Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C *2 Tch < =150C *5 VGS=-30V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=900V VGS=0V Tch=25C Tch=125C VDS=720V VGS=0V VGS=30V VDS=0V ID=1.85A VGS=10V ID=1.85A VDS=25V Min. 2 VDS =25V VGS=0V f=1MHz VCC=600V ID=1.85A VGS=10V RGS=10 VCC =450V ID=3.7A VGS=10V L=22.9mH Tch=25C IF=3.7A VGS=0V Tch=25C IF=3.7A VGS=0V -di/dt=100A/s Tch=25C Typ. 900 3.0 3.31 4 430 60 3.5 19 7 32 17 16.5 6.4 3.7 Max. 5.0 25 250 100 4.30 650 90 5 29 11 48 26 24.8 9.6 5.6 3.7 0.9 1.0 4.0 1.50 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.042 62.0 Units C/W C/W 1 2SK3698-01 FUJI POWER MOSFET Characteristics 150 Allowable Power Dissipation PD=f(Tc) 5 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C 10V 7.0V 6.5V 20V 125 4 6.0V 100 ID [A] PD [W] 3 75 2 50 VGS=5.5V 1 25 0 0 0 25 50 75 100 125 150 0 5 10 15 20 25 VDS [V] Tc [C] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 1 gfs [S] ID[A] 10 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 10 1 VGS[V] 10 ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=5.5V 12 6.0V 4.4 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=1.85A,VGS=10V 6.5V 7.0V 10 4.2 20V 8 RDS(on) [ ] RDS(on) [ ] 10V 4.0 3.8 3.6 6 max. 4 typ. 3.4 2 3.2 3.0 0 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3698-01 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 Typical Gate Charge Characteristics VGS=f(Qg):ID=3.7A,Tch=25C 14 6.5 12 6.0 Vcc= 180V 450V 5.5 720V 4.5 4.0 VGS [V] VGS(th) [V] 10 max. 5.0 3.5 min. 3.0 8 6 2.5 4 2.0 1.5 2 1.0 0.5 0 0.0 -50 -25 0 25 50 75 100 125 0 150 5 10 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 10 25 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss -1 Coss 10 20 0 IF [A] C [nF] 10 15 Qg [nC] Tch [C] 1 -2 Crss 10 -3 10 0 10 1 10 0.1 0.00 2 0.25 0.50 10 3 0.75 1.00 1.25 1.50 VSD [V] VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 350 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=90V IAS=2A 300 tf 250 10 2 IAS=3A t [ns] EAS [mJ] td(off) td(on) 10 200 IAS=3.7A 150 1 100 tr 50 10 0 10 0 -1 10 0 10 1 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 Avalanche Current I AV [A] 2SK3698-01 10 2 10 1 10 0 10 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=90V Single Pulse -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4