M58LT128HST M58LT128HSB 128 Mbit (8 Mb x16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories Features Supply voltage - VDD = 1.7 V to 2.0 V for Program, Erase and Read - VDDQ = 2.7 V to 3.6 V for I/O buffers - VPP = 9 V for fast program BGA Synchronous/Asynchronous Read - Synchronous Burst Read mode: 52 MHz - Asynchronous Page Read mode - Random access: 85 ns Synchronous Burst Read Suspend Programming time - 2.5 s typical word program time using Buffer Enhanced Factory Program command Memory organization - Multiple bank memory array: 8-Mbit banks - Parameter blocks (top or bottom location) Dual operations - program/erase in one bank while read in others - No delay between Read and Write operations Block protection - All blocks protected at power-up - Any combination of blocks can be protected with zero latency - Absolute write protection with VPP = VSS Security - Software security features - 64-bit unique device number - 2112-bit user programmable OTP Cells Common flash interface (CFI) 100 000 program/erase cycles per block December 2007 TBGA64 (ZA) 10 x 13 mm Electronic signature - Manufacturer code: 20h - Top device codes: M58LT128HST: 88D6h - Bottom device codes M58LT128HSB: 88D7h TBGA64 package - ECOPACK(R) available Rev 3 1/110 www.numonyx.com 1 Contents M58LT128HST, M58LT128HSB Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Signal descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3 4 2/110 2.1 Address inputs (A0-A22) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2 Data inputs/outputs (DQ0-DQ15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.3 Chip Enable (E) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.4 Output Enable (G) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.5 Write Enable (W) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.6 Reset (RP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.7 Latch Enable (L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.8 Clock (K) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.9 Wait (WAIT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.10 VDD supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.11 VDDQ supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.12 VPP program supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2.13 VSS ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.14 VSSQ ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.1 Bus Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.2 Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.3 Address Latch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.4 Output Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3.5 Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.6 Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Command interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 4.1 Read Array command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.2 Read Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.3 Read Electronic Signature command . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.4 Read CFI Query command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.5 Clear Status Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 M58LT128HST, M58LT128HSB 5 6 Contents 4.6 Block Erase command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4.7 Blank Check command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4.8 Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.9 Buffer Program command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4.10 Buffer Enhanced Factory Program command . . . . . . . . . . . . . . . . . . . . . 24 4.10.1 Setup phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.10.2 Program and verify phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.10.3 Exit phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.11 Program/Erase Suspend command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 4.12 Program/Erase Resume command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.13 Protection Register Program command . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4.14 Set Configuration Register command . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.15 Block Protect command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 4.16 Block Unprotect command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 5.1 Program/Erase Controller status bit (SR7) . . . . . . . . . . . . . . . . . . . . . . . . 33 5.2 Erase Suspend status bit (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 5.3 Erase/Blank Check status bit (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.4 Program status bit (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.5 VPP status bit (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 5.6 Program Suspend status bit (SR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 5.7 Block Protection status bit (SR1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 5.8 Bank Write/Multiple Word Program status bit (SR0) . . . . . . . . . . . . . . . . 35 Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 6.1 Read Select bit (CR15) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 6.2 X-Latency bits (CR13-CR11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 6.3 Wait Polarity bit (CR10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.4 Data Output Configuration bit (CR9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.5 Wait Configuration bit (CR8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.6 Burst Type bit (CR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 6.7 Valid Clock Edge bit (CR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 6.8 Wrap Burst bit (CR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 3/110 Contents M58LT128HST, M58LT128HSB 6.9 7 Burst length bits (CR2-CR0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Read modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 7.1 Asynchronous Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 7.2 Synchronous Burst Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 7.2.1 7.3 Synchronous Burst Read Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 Single Synchronous Read mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 8 Dual operations and multiple bank architecture . . . . . . . . . . . . . . . . . 47 9 Block protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 9.1 Protection status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 9.2 Protected state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 9.3 Unprotected state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 9.4 Protection operations during Erase Suspend . . . . . . . . . . . . . . . . . . . . . . 50 10 Program and erase times and endurance cycles . . . . . . . . . . . . . . . . . 51 11 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 12 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 13 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 14 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 Appendix A Block address tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Appendix B Common Flash Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 Appendix C Flowcharts and pseudo codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Appendix D Command Interface state tables. . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 4/110 M58LT128HST, M58LT128HSB List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. Table 19. Table 20. Table 21. Table 22. Table 23. Table 24. Table 25. Table 26. Table 27. Table 28. Table 29. Table 30. Table 31. Table 32. Table 33. Table 34. Table 35. Table 36. Table 37. Table 38. Table 39. Table 40. Table 41. Table 42. Table 43. Table 44. Table 45. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Bank architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Bus operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Command codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Standard commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Factory commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Electronic signature codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Protection Register locks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Status Register bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 X-Latency Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 Configuration Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Burst type definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Dual operations allowed in other banks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 Dual operations allowed in same bank . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Dual operation limitations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48 Program/erase times and endurance cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Operating and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 DC characteristics - currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 DC characteristics - voltages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 Asynchronous Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 Synchronous Read AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 Write AC characteristics, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66 Write AC characteristics, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68 Reset and power-up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 TBGA64 10 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 Top boot block addresses, M58LT128HST . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Bottom boot block addresses, M58LT128HSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77 Query structure overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81 CFI query identification string . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82 CFI query system interface information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 Device geometry definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84 Primary algorithm-specific extended query table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85 Protection Register information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 Burst Read information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86 Bank and Erase Block region information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 Bank and Erase Block region 1 information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87 Bank and Erase Block region 2 Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89 Command Interface states - modify table, next state . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Command Interface states - modify table, next output state . . . . . . . . . . . . . . . . . . . . . . 103 Command interface states - lock table, next state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Command interface states - lock table, next output state . . . . . . . . . . . . . . . . . . . . . . . . 107 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109 5/110 List of figures M58LT128HST, M58LT128HSB List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. 6/110 Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 TBGA64 package connections (top view through package) . . . . . . . . . . . . . . . . . . . . . . . . 10 Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Protection Register memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 X-latency and data output configuration example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Wait configuration example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 AC measurement load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Asynchronous random access Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58 Asynchronous Page Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59 Synchronous Burst Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61 Single Synchronous Read AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62 Synchronous Burst Read Suspend AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Clock input AC waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 Write AC waveforms, Write Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 Write AC waveforms, Chip Enable controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67 Reset and power-up AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69 TBGA64 10 x 13 mm - 8 x 8 active ball array, 1 mm pitch, bottom view package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 Program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91 Blank Check flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 Buffer Program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93 Program Suspend & Resume flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . 94 Block Erase flowchart and pseudo code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95 Erase Suspend & Resume flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . . 96 Protect/Unprotect operation flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . . 97 Protection Register Program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . . . . . 98 Buffer Enhanced Factory Program flowchart and pseudo code . . . . . . . . . . . . . . . . . . . . . 99 M58LT128HST, M58LT128HSB 1 Description Description The M58LT128HST/B are 128 Mbit (8 Mbit x 16) non-volatile secure Flash memories. They may be erased electrically at block level and programmed in system on a word-by-word basis using a 1.7 V to 2.0 V VDD supply for the circuitry and a 2.7 V to 3.6 V VDDQ supply for the Input/Output pins. An optional 9 V VPP power supply is provided to accelerate factory programming. The devices feature an asymmetrical block architecture, with an array of 131 blocks, divided into 8 Mbit banks. There are 15 banks each containing 8 main blocks of 64 Kwords, and one parameter bank containing 4 parameter blocks of 16 Kwords and 7 main blocks of 64 Kwords. The multiple bank architecture allows dual operations, while programming or erasing in one bank, Read operations are possible in other banks. Only one bank at a time is allowed to be in Program or Erase mode. It is possible to perform burst reads that cross bank boundaries. The bank architecture is summarized in Table 2, and the memory map is shown in Figure 3. The parameter blocks are located at the top of the memory address space for the M58LT128HST, and at the bottom for the M58LT128HSB. Each block can be erased separately. Erase can be suspended to perform a program or read operation in any other block, and then resumed. Program can be suspended to read data at any memory location except for the one being programmed, and then resumed. Each block can be programmed and erased over 100,000 cycles using the supply voltage VDD. There is a buffer-enhanced factory programming command available to accelerate programming. Program And Erase Commands Are Written To The command interface of the memory. An internal Program/Erase Controller manages the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified in the Status Register. The command set required to control the memory is consistent with JEDEC standards. The device supports Synchronous Burst Read and Asynchronous Read from all blocks of the memory array; at power-up the device is configured for Asynchronous Read. In Synchronous Burst Read mode, data is output on each clock cycle at frequencies of up to 52 MHz. The Synchronous Burst Read operation can be suspended and resumed. The device features an Automatic Standby mode. When the bus is inactive during Asynchronous Read operations, the device automatically switches to the Automatic Standby mode. In this condition the power consumption is reduced to the standby value and the outputs are still driven. The M58LT128HST/B features an instant, individual block protection scheme that allows any block to be protected or unprotected with no latency, enabling instant code and data protection. They can be protected individually preventing any accidental programming or erasure. There is an additional hardware protection against program and erase. When VPP VPPLK all blocks are protected against program or erase. All blocks are protected at powerup. 7/110 Description M58LT128HST, M58LT128HSB The device includes 17 Protection Registers and 2 Protection Register locks, one for the first Protection Register and the other for the 16 one-time-programmable (OTP) Protection Registers of 128 bits each. The first Protection Register is divided into two segments: a 64 bit segment containing a unique device number written by Numonyx, and a 64 bit segment OTP by the user. The user programmable segment can be permanently protected. Figure 4, shows the Protection Register memory map. The M58LT128HST/B also has a full set of software security features that are not described in this datasheet, but are documented in a dedicated application note. For further information, please contact Numonyx. The M58LT128HST/B are offered in a TBGA64, 10 x 13 mm, 1 mm pitch package. They are supplied with all the bits erased (set to '1'). 8/110 M58LT128HST, M58LT128HSB Figure 1. Description Logic diagram VDD VDDQ VPP 16 DQ0-DQ15 A0-A22 W E G M58LT128HST M58LT128HSB WAIT RP L K VSS Table 1. VSSQ AI12887 Signal names Signal name Function Direction A0-A22 Address inputs Inputs DQ0-DQ15 Data input/outputs, command inputs I/O E Chip Enable Input G Output Enable Input W Write Enable Input RP Reset Input K Clock Input L Latch Enable Input WAIT Wait Output VDD Supply voltage Input VDDQ Supply voltage for input/output buffers Input VPP Optional supply voltage for fast program & erase Input VSS Ground VSSQ Ground input/output supply NC Not Connected Internally DU Do Not Use Input 9/110 Description M58LT128HST, M58LT128HSB Figure 2. TBGA64 package connections (top view through package) 1 2 3 4 5 6 7 8 A A0 A5 A7 VPP A12 VDD A17 A21 B A1 VSS A8 E A13 NC A18 WAIT C A2 A6 A9 A11 A14 NC A19 A20 D A3 A4 A10 RP NC NC A15 A16 E DQ8 DQ1 DQ9 DQ3 DQ4 NC DQ15 NC F K DQ0 DQ10 DQ11 DQ12 NC NC G G A22 NC DQ2 VDDQ DQ5 DQ6 DQ14 W H L NC VDD VSSQ DQ13 VSS DQ7 NC AI10270b 10/110 M58LT128HST, M58LT128HSB Table 2. Description Bank architecture Parameter bank 8 Mbits 4 blocks of 16 Kwords 7 blocks of 64 Kwords Bank 1 8 Mbits - 8 blocks of 64 Kwords Bank 2 8 Mbits - 8 blocks of 64 Kwords Bank 3 8 Mbits - 8 blocks of 64 Kwords ---- Main blocks ---- Parameter blocks ---- Bank size ---- Number Bank 14 8 Mbits - 8 blocks of 64 Kwords Bank 15 8 Mbits - 8 blocks of 64 Kwords Figure 3. Memory map M58LT128HSB - Bottom Boot Block Address lines A0-A16 M58LT128HST - Top Boot Block Address lines A0-A16 000000h 00FFFFh 64 KWord 070000h 07FFFFh 64 KWord Bank 15 600000h 60FFFFh 8 Main Blocks 7E0000h Parameter 7EFFFFh Bank 7F0000h 7F3FFFh 7FC000h 7FFFFFh 4 Parameter Blocks 16 KWord 64 KWord 7 Main Blocks 64 KWord 64 KWord 8 Main Blocks 64 KWord 64 KWord 8 Main Blocks Bank 2 170000h 17FFFFh 180000h 18FFFFh 64 KWord Bank 1 770000h 77FFFFh 780000h 78FFFFh 0F0000h 0FFFFFh 100000h 10FFFFh 64 KWord 8 Main Blocks 16 KWord Bank 1 64 KWord 8 Main Blocks 00C000h 00FFFFh 010000h 01FFFFh 070000h 07FFFFh 080000h 08FFFFh 64 KWord Bank 2 6F0000h 6FFFFFh 700000h 70FFFFh Parameter Bank 64 KWord Bank 3 670000h 67FFFFh 680000h 68FFFFh 000000h 003FFFh 8 Main Blocks 64 KWord 64 KWord 8 Main Blocks Bank 3 64 KWord 1F0000h 1FFFFFh 64 KWord 780000h 78FFFFh 64 KWord 7F0000h 7FFFFFh 64 KWord 64 KWord 7 Main Blocks 64 KWord 16 KWord 4 Parameter Blocks Bank 15 16 KWord 8 Main Blocks AI12888 11/110 Signal descriptions 2 M58LT128HST, M58LT128HSB Signal descriptions See Figure 1: Logic diagram and Table 1: Signal names, for a brief overview of the signals connected to this device. 2.1 Address inputs (A0-A22) The Address Inputs select the cells in the memory array to access during Bus Read operations. During Bus Write operations they control the commands sent to the command interface of the Program/Erase Controller. 2.2 Data inputs/outputs (DQ0-DQ15) The Data I/O output the data stored at the selected address during a Bus Read operation or input a command or the data to be programmed during a Bus Write operation. 2.3 Chip Enable (E) The Chip Enable input activates the memory control logic, input buffers, decoders and sense amplifiers. When Chip Enable is at VILand Reset is at VIH the device is in active mode. When Chip Enable is at VIH the memory is deselected, the outputs are high impedance and the power consumption is reduced to the standby level. 2.4 Output Enable (G) The Output Enable input controls data outputs during the Bus Read operation of the memory. 2.5 Write Enable (W) The Write Enable input controls the Bus Write operation of the memory's Command Interface. The data and address inputs are latched on the rising edge of Chip Enable or Write Enable whichever occurs first. 2.6 Reset (RP) The Reset input provides a hardware reset of the memory. When Reset is at VIL, the memory is in reset mode: the outputs are high impedance and the current consumption is reduced to the Reset Supply Current IDD2. Refer to Table 20: DC characteristics - currents, for the value of IDD2. After Reset, all blocks are in the protected state and the Configuration Register is reset. When Reset is at VIH, the device is in normal operation. When exiting Reset mode the device enters Asynchronous Read mode, but a negative transition of Chip Enable or Latch Enable is required to ensure valid data outputs. 12/110 M58LT128HST, M58LT128HSB 2.7 Signal descriptions Latch Enable (L) Latch Enable latches the address bits on its rising edge. The address latch is transparent when Latch Enable is at VIL and it is inhibited when Latch Enable is at VIH. 2.8 Clock (K) The Clock input synchronizes the memory to the microcontroller during Synchronous Read operations; the address is latched on a Clock edge (rising or falling, according to the configuration settings) when Latch Enable is at VIL. Clock is ignored during Asynchronous Read and in Write operations. 2.9 Wait (WAIT) Wait is an output signal used during synchronous read to indicate whether the data on the output bus are valid. This output is high impedance when Chip Enable is at VIH, Output Enable is at VIH or Reset is at VIL. It can be configured to be active during the wait cycle or one clock cycle in advance. 2.10 VDD supply voltage VDD provides the power supply to the internal core of the memory device. It is the main power supply for all operations (Read, Program, and Erase). 2.11 VDDQ supply voltage VDDQ provides the power supply to the I/O pins and enables all outputs to be powered independently from VDD. 2.12 VPP program supply voltage VPP is both a control input and a power supply pin. The two functions are selected by the voltage range applied to the pin. If VPP is kept in a low voltage range (0V to VDDQ) VPP is seen as a control input. In this case a voltage lower than VPPLK gives absolute protection against program or erase, while VPP in the VPP1 range enables these functions (see Tables 20 and 21, DC Characteristics for the relevant values). VPP is only sampled at the beginning of a program or erase; a change in its value after the operation has started does not have any effect and program or erase operations continue. If VPP is in the range of VPPH it acts as a power supply pin. In this condition VPP must be stable until the Program/Erase algorithm is completed. 13/110 Signal descriptions 2.13 M58LT128HST, M58LT128HSB VSS ground VSS ground is the reference for the core supply. It must be connected to the system ground. 2.14 VSSQ ground VSSQ ground is the reference for the input/output circuitry driven by VDDQ. VSSQ must be connected to VSS Note: 14/110 Each device in a system should have VDD, VDDQ and VPP decoupled with a 0.1F ceramic capacitor close to the pin (high-frequency, inherently low inductance capacitors should be as close as possible to the package). See Figure 8: AC measurement load circuit. The PCB track widths should be sufficient to carry the required VPP program and erase currents. M58LT128HST, M58LT128HSB 3 Bus operations Bus operations There are six standard bus operations that control the device. These are Bus Read, Bus Write, Address Latch, Output Disable, Standby and Reset. See Table 3: Bus operations, for a summary. Typically glitches of less than 5 ns on Chip Enable or Write Enable are ignored by the memory and do not affect Bus Write operations. 3.1 Bus Read Bus Read operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output Enable must be at VIL to perform a Read operation. The Chip Enable input is used to enable the device. Output Enable is used to gate data onto the output. The data read depends on the previous command written to the memory (see Command Interface section). See Figures 9, 10 and 11 Read AC Waveforms, and Tables 22 and 23 Read AC Characteristics, for details of when the output becomes valid. 3.2 Bus Write Bus Write operations write commands to the memory or latch input data to be programmed. A Bus Write operation is initiated when Chip Enable and Write Enable are at VIL with Output Enable at VIH. Commands, input data and addresses are latched on the rising edge of Write Enable or Chip Enable, whichever occurs first. The addresses must be latched prior to the write operation by toggling Latch Enable (when Chip Enable is at VIL). The Latch Enable must be tied to VIH during the Bus Write operation. See Figures 15 and 16, Write AC waveforms, and Tables 24 and 25, Write AC characteristics, for details of the timing requirements. 3.3 Address Latch Address Latch operations input valid addresses. Both Chip Enable and Latch Enable must be at VIL during Address Latch operations. The addresses are latched on the rising edge of Latch Enable. 3.4 Output Disable The outputs are high impedance when the Output Enable is at VIH. 15/110 Bus operations 3.5 M58LT128HST, M58LT128HSB Standby Standby disables most of the internal circuitry, allowing a substantial reduction of the current consumption. The memory is in Standby when Chip Enable and Reset are at VIH. The power consumption is reduced to the standby level IDD3 and the outputs are set to high impedance, independently from the Output Enable or Write Enable inputs. If Chip Enable switches to VIH during a Program or Erase operation, the device enters Standby mode when finished. 3.6 Reset During Reset mode the memory is deselected and the outputs are high impedance. The memory is in Reset mode when Reset is at VIL. The power consumption is reduced to the Reset level, independently from the Chip Enable, Output Enable, or Write Enable inputs. If Reset is pulled to VSS during a Program or Erase, this operation is aborted and the memory content is no longer valid. Table 3. Bus operations(1) Operation Bus Read WAIT(2) E G W L RP VIL VIL VIH VIL(3) VIH Data Output (3) VIH Data Input Data Output or Hi-Z(4) Bus Write VIL VIH VIL Address Latch VIL X VIH VIL VIH Output Disable VIL VIH VIH X VIH Hi-Z Hi-Z Standby VIH X X X VIH Hi-Z Hi-Z X X X X VIL Hi-Z Hi-Z Reset VIL 1. X = `Don't care'. 2. WAIT signal polarity is configured using the Set Configuration Register command. 3. L can be tied to VIH if the valid address has been previously latched. 4. Depends on G. 16/110 DQ15-DQ0 M58LT128HST, M58LT128HSB 4 Command interface Command interface All Bus Write operations to the memory are interpreted by the Command Interface. Commands consist of one or more sequential Bus Write operations. An internal Program/Erase Controller handles all timings and verifies the correct execution of the program and erase commands. The Program/Erase Controller provides a Status Register whose output may be read at any time to monitor the progress or the result of the operation. When exiting from Reset or whenever VDD is lower than VLKO, the Command Interface is reset to Read mode when power is first applied. Command sequences must be followed exactly. Any invalid combination of commands is ignored. Refer to Table 4: Command codes, Table 5: Standard commands, Table 6: Factory commands, and Appendix D: Command Interface state tables for a summary of the Command Interface. Table 4. Command codes Hex Code Command 01h Block Protect Confirm 03h Set Configuration Register Confirm 10h Alternative Program Setup 20h Block Erase Setup 40h Program Setup 50h Clear Status Register 60h Block Protect Setup, Block Unprotect Setup and Set Configuration Register Setup 70h Read Status Register 80h Buffer Enhanced Factory Program Setup 90h Read Electronic Signature 98h Read CFI Query B0h Program/Erase Suspend BCh Blank Check Setup C0h Protection Register Program CBh Blank Check Confirm D0h Program/Erase Resume, Block Erase Confirm, Block Unprotect Confirm, Buffer Program or Buffer Enhanced Factory Program Confirm E8h Buffer Program FFh Read Array 17/110 Command interface 4.1 M58LT128HST, M58LT128HSB Read Array command The Read Array command returns the addressed bank to Read Array mode. One Bus Write cycle is required to issue the Read Array command. Once a bank is in Read Array mode, subsequent read operations outputs the data from the memory array. A Read Array command can be issued to any banks while programming or erasing in another bank. If the Read Array command is issued to a bank currently executing a program or erase operation, the bank returns to Read Array mode, but the Program or Erase operation continues. However, the data output from the bank is not guaranteed until the Program or Erase operation is finished. The Read modes of other banks are not affected. 4.2 Read Status Register command The device contains a Status Register that is used to monitor program or erase operations. The Read Status Register command is used to read the contents of the Status Register for the addressed bank. One Bus Write cycle is required to issue the Read Status Register command. Once a bank is in Read Status Register mode, subsequent Read operations output the contents of the Status Register. The Status Register data is latched on the falling edge of the Chip Enable or Output Enable signals. Either Chip Enable or Output Enable must be toggled to update the Status Register data The Read Status Register command can be issued at any time, even during Program or Erase operations. The Read Status Register command only changes the Read mode of the addressed bank. The Read modes of other banks are not affected. Only Asynchronous Read and Single Synchronous Read operations should be used to read the Status Register. A Read Array command is required to return the bank to Read Array mode. See Table 9 for the description of the Status Register Bits. 18/110 M58LT128HST, M58LT128HSB 4.3 Command interface Read Electronic Signature command The Read Electronic Signature command is used to read the manufacturer and device codes, the protection status of the addressed bank, the Protection Register, and the Configuration Register. One Bus Write cycle is required to issue the Read Electronic Signature command. Once a bank is in Read Electronic Signature mode, subsequent Read operations in the same bank output the manufacturer code, the device code, the protection status of the addressed bank, the Protection Register, or the Configuration Register (see Table 8). The Read Electronic Signature command can be issued at any time, even during Program or Erase operations, except during Protection Register Program operations. Dual operations between the parameter bank and the electronic signature location are not allowed (see Table 15: Dual operation limitations for details). If a Read Electronic Signature command is issued to a bank that is executing a Program or Erase operation the bank go into Read Electronic Signature mode. Subsequent Bus Read cycles output the Electronic Signature data and the Program/Erase Controller continues to program or erase in the background. The Read Electronic Signature command only changes the Read mode of the addressed bank. The Read modes of other banks are not affected. Only Asynchronous Read and Single Synchronous Read operations should be used to read the Electronic Signature. A Read Array command is required to return the bank to Read Array mode. 4.4 Read CFI Query command The Read CFI Query command is used to read data from the Common Flash Interface (CFI). One Bus Write cycle is required to issue the Read CFI Query command. Once a bank is in Read CFI Query mode, subsequent Bus Read operations in the same bank read from the Common Flash Interface. The Read CFI Query command can be issued at any time, even during Program or Erase operations. If a Read CFI Query command is issued to a bank that is executing a Program or Erase operation the bank goes into Read CFI Query mode. Subsequent Bus Read cycles output the CFI data and the Program/Erase controller continues to Program or Erase in the background. The Read CFI Query command only changes the Read mode of the addressed bank. The Read modes of other banks are not affected. Only Asynchronous Read and Single Synchronous Read operations should be used to read from the CFI. A Read Array command is required to return the bank to Read Array mode. Dual operations between the Parameter Bank and the CFI memory space are not allowed (see Table 15: Dual operation limitations for details). See Appendix B: Common Flash Interface, Tables 31, 32, 33, 34, 35, 36, 37, 38, 39 and 40 for details on the information contained in the Common Flash Interface memory area. 19/110 Command interface 4.5 M58LT128HST, M58LT128HSB Clear Status Register command The Clear Status Register command can be used to reset (set to `0') all error bits (SR1, 3, 4 and 5) in the Status Register. One Bus Write cycle is required to issue the Clear Status Register command. The Clear Status Register command does not affect the Read mode of the bank. The error bits in the Status Register do not automatically return to `0' when a new command is issued. The error bits in the Status Register should be cleared before attempting a new Program or Erase command. 4.6 Block Erase command The Block Erase command is used to erase a block. It sets all the bits within the selected block to '1'. All previous data in the block is lost. If the block is protected then the erase operation aborts, the data in the block is not changed, and the Status Register outputs the error. The following two Bus Write cycles are required to issue the command: The first bus cycle sets up the Block Erase command. The second latches the block address and starts the Program/Erase Controller. If the second bus cycle is not the Block Erase Confirm code, Status Register bits SR4 and SR5 are set and the command is aborted. Once the command is issued, the bank enters Read Status Register mode and any Read operation within the addressed bank outputs the contents of the Status Register. A Read Array command is required to return the bank to Read Array mode. During Block Erase operations the bank containing the block being erased only accepts the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query, and the Program/Erase Suspend command; all other commands are ignored. The Block Erase operation aborts if Reset, RP, goes to VIL. As data integrity cannot be guaranteed when the Block Erase operation is aborted, the block must be erased again. Refer to Chapter 8: Dual operations and multiple bank architecture for detailed information about simultaneous operations allowed in banks not being erased. Typical erase times are given in Table 16: Program/erase times and endurance cycles. See Appendix C, Figure 23: Block Erase flowchart and pseudo code for a suggested flowchart for using the Block Erase command. 20/110 M58LT128HST, M58LT128HSB 4.7 Command interface Blank Check command The Blank Check command is used to check whether a block has been completely erased. Only one block at a time can be checked. To use the Blank Check command, VPP must be equal to VPPH. If VPP is not equal to VPPH, the device ignores the command and no error is shown in the Status Register. The following two bus cycles are required to issue the Blank Check command: The first bus cycle writes the Blank Check command (BCh) to any address in the block to be checked. The second bus cycle writes the Blank Check Confirm command (CBh) to any address in the block to be checked and starts the Blank Check operation. If the second bus cycle is not Blank Check Confirm, Status Register bits SR4 and SR5 are set to '1' and the command aborts. Once the command is issued the addressed bank automatically enters the Status Register mode and further reads the Status Register contents within the bank output. The only operation permitted during Blank Check is Read Status Register. Dual operations are not supported while a Blank Check operation is in progress. Blank Check operations cannot be suspended and are not allowed while the device is in Program/Erase Suspend. The SR7 Status Register bit indicates the status of the Blank Check operation in progress: SR7 = '0' means that the Blank Check operation is still ongoing, and SR7 = '1' means that the operation is complete. The SR5 Status Register bit goes High (SR5 = '1') to indicate if the Blank Check operation has failed. At the end of the operation the bank remains in the Read Status Register mode until another command is written to the Command Interface. See Appendix C, Figure 20: Blank Check flowchart and pseudo code for a suggested flowchart for using the Blank Check command. Typical Blank Check times are given in Table 16: Program/erase times and endurance cycles. 21/110 Command interface 4.8 M58LT128HST, M58LT128HSB Program command The Program command is used to program a single word to the memory array. If the block being programmed is protected, then the Program operation aborts, the data in the block is not changed, and the Status Register outputs the error. The following two Bus Write cycles are required to issue the Program Command: The first bus cycle sets up the Program command. The second latches the address and data to be programmed and starts the Program/Erase Controller. Once the programming has started, Read operations in the bank being programmed output the Status Register content. During a Program operation, the bank containing the word being programmed only accepts the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query and the Program/Erase Suspend commands; all other commands are ignored. A Read Array command is required to return the bank to Read Array mode. Refer to Chapter 8: Dual operations and multiple bank architecture for detailed information about simultaneous operations allowed in banks not being programmed. Typical Program times are given in Table 16: Program/erase times and endurance cycles. The Program operation aborts if Reset, RP, goes to VIL. As data integrity cannot be guaranteed when the Program operation is aborted, the word must be reprogrammed. See Appendix C, Figure 19: Program flowchart and pseudo code for the flowchart for using the Program command. 22/110 M58LT128HST, M58LT128HSB 4.9 Command interface Buffer Program command The Buffer Program Command makes use of the device's 32-word Write Buffer to accelerate programming. Up to 32 words can be loaded into the Write Buffer, which can dramatically reduce in-system programming time compared to the standard non-buffered Program command. Four successive steps are required to issue the Buffer Program command: 1. The first Bus Write cycle sets up the Buffer Program command. The setup code can be addressed to any location within the targeted block. After the first Bus Write cycle, Read operations in the bank output the contents of the Status Register. Status Register bit SR7 should be read to check that the buffer is available (SR7 = `1'). If the buffer is not available (SR7 = `0'), re-issue the Buffer Program command to update the Status Register contents. 2. The second Bus Write cycle sets up the number of words to be programmed. Value "n" is written to the same block address, where n+1 is the number of words to be programmed. 3. Use n+1 Bus Write cycles to load the address and data for each word into the Write Buffer. Addresses must lie within the range from the start address to the start address + n, where the start address is the location of the first data to be programmed. Optimum performance is obtained when the start address corresponds to a 32-word boundary. 4. The final Bus Write cycle confirms the Buffer Program command and starts the program operation. All the addresses used in the Buffer Program operation must lie within the same block. Invalid address combinations or an incorrect sequence of Bus Write cycles sets an error in the Status Register and aborts the operation without affecting the data in the memory array. If the block being programmed is protected an error is set in the Status Register, and the operation aborts without affecting the data in the memory array. During Buffer Program operations the bank being programmed only accepts the Read Array, Read Status Register, Read Electronic Signature, Read CFI Query, and the Program/Erase Suspend command; all other commands are ignored. Refer to Chapter 8: Dual operations and multiple bank architecture for detailed information about simultaneous operations allowed in banks not being programmed. See Appendix C, Figure 21: Buffer Program flowchart and pseudo code for a suggested flowchart on using the Buffer Program command. 23/110 Command interface 4.10 M58LT128HST, M58LT128HSB Buffer Enhanced Factory Program command The Buffer Enhanced Factory Program command has been specially developed to accelerate programming in manufacturing environments where the programming time is critical. It is used to program one or more Write Buffer(s) of 32 words to a block. Once the device enters Buffer Enhanced Factory Program mode, the Write Buffer can be reloaded any number of times as long as the address remains within the same block. Only one block can be programmed at a time. If the block being programmed is protected, then the Program operation aborts, the data in the block is not changed and the Status Register outputs the error. The use of the Buffer Enhanced Factory Program command requires the following operating conditions: VPP must be set to VPPH VDD must be within operating range Ambient temperature TA must be 30C 10C The targeted block must be unprotected The start address must be aligned with the start of a 32-word buffer boundary The address must remain the Start Address throughout programming. Dual operations are not supported during the Buffer Enhanced Factory Program operation and the command cannot be suspended. The Buffer Enhanced Factory Program Command consists of three phases: the Setup Phase, the Program and Verify Phase, and the Exit Phase. Refer to Table 6: Factory commands for detailed information. 4.10.1 Setup phase The Buffer Enhanced Factory Program command requires the following two Bus Write cycles to initiate the command. The first Bus Write cycle sets up the Buffer Enhanced Factory Program command. The second Bus Write cycle confirms the command. After the Confirm command is issued, Read operations output the contents of the Status Register. The read Status Register command must not be issued, othewise it is interpreted as data to program. The Status Register Program/Erase Controller bit SR7 should be read to check that the Program/Erase Controller is ready to proceed to the next phase. If an error is detected, SR4 goes high (set to `1') and the Buffer Enhanced Factory Program operation is terminated. See Chapter 5: Status Register for details on the error. 24/110 M58LT128HST, M58LT128HSB 4.10.2 Command interface Program and verify phase The program and verify phase requires 32 cycles to program the 32 words to the Write Buffer. The data is stored sequentially, starting at the first address of the Write Buffer, until the Write Buffer is full (32 words). To program less than 32 words, the remaining words should be programmed with FFFFh. The following three successive steps are required to issue and execute the program and verify phase of the command. 1. Use one Bus Write operation to latch the Start Address and the first word to be programmed. The Status Register Bank Write status bit SR0 should be read to check that the Program/Erase Controller is ready for the next word. 2. Each subsequent word to be programmed is latched with a new Bus Write operation. The address must remain the start address as the Program/Erase Controller increments the address location. If any address is given that is not in the same block as the start address, the program and verify phase terminates. Status Register bit SR0 should be read between each Bus Write cycle to check that the Program/Erase Controller is ready for the next word. 3. Once the Write Buffer is full, the data is programmed sequentially to the memory array. After the Program operation, the device automatically verifies the data and reprograms, if necessary. The program and verify phase can be repeated, without re-issuing the command, to program additional 32 word locations as long as the address remains in the same block. 4. Finally, after all words, or the entire block has been programmed, write one Bus Write operation to any address outside the block containing the start address, to terminate program and verify phase. Status Register bit SR0 must be checked to determine whether the Program operation is finished. The Status Register may be checked for errors at any time but it must be checked after the entire block has been programmed. 4.10.3 Exit phase Status Register Program/Erase Controller bit SR7 set to `1' indicates that the device has exited the Buffer Enhanced Factory Program operation and returned to Read Status Register mode. A full Status Register check should be done to ensure that the block has been successfully programmed. See Section Table 5: Status Register for more details. For optimum performance the Buffer Enhanced Factory Program command should be limited to a maximum of 100 program/erase cycles per block. If this limit is exceeded, the internal algorithm continues to work properly but some degradation in performance is possible. Typical program times are given in Table 16. See Appendix C, Figure 27: Buffer Enhanced Factory Program flowchart and pseudo code for a suggested flowchart on using the Buffer Enhanced Factory Program command. 25/110 Command interface 4.11 M58LT128HST, M58LT128HSB Program/Erase Suspend command The Program/Erase Suspend command is used to pause a Program or Block Erase operation. The command can be addressed to any bank. The Program/Erase Resume command is required to restart the suspended operation. One Bus Write cycle is required to issue the Program/Erase Suspend command. Once the Program/Erase Controller has paused, bits SR7, SR6, and/or SR2 of the Status Register are set to `1'. The following commands are accepted during Program/Erase Suspend: - Program/Erase Resume - Read Array (data from erase-suspended blocks or program-suspended words is not valid) - Read Status Register - Read Electronic Signature - Read CFI Query In addition, if the suspended operation is a Block Erase, then the following commands are also accepted: - Clear Status Register - Program (except in erase-suspended blocks) - Buffer Program (except in erase suspended blocks) - Block Protect - Block Unprotect - Set Configuration Register During an Erase Suspend, the block being erased can be protected by issuing the Block Protect command. When the Program/Erase Resume command is issued, the operation completes. It is possible to accumulate multiple suspend operations. For example, suspend an Erase operation, start a Program operation, suspend the Program operation, and then read the array. If a Program command is issued during a Block Erase Suspend, the Erase operation cannot be resumed until the program operation has completed. The Program/Erase Suspend command does not change the read mode of the banks. If the suspended bank was in Read Status Register, Read Electronic signature, or Read CFI Query mode, the bank remains in that mode and outputs the corresponding data. Refer to Section Table 8: Dual operations and multiple bank architecture for detailed information about simultaneous operations allowed during Program/Erase Suspend. During a Program/Erase Suspend, the device can be placed in Standby mode by driving Chip Enable to VIH. Program/Erase is aborted if Reset, RP, goes to VIL. See Appendix C, Figure 22: Program Suspend & Resume flowchart and pseudo code and Figure 24: Erase Suspend & Resume flowchart and pseudo code for flowcharts for using the Program/Erase Suspend command. 26/110 M58LT128HST, M58LT128HSB 4.12 Command interface Program/Erase Resume command The Program/Erase Resume command is used to restart the Program or Erase operation suspended by the Program/Erase Suspend command. One Bus Write cycle is required to issue the command. The command can be issued to any address. The Program/Erase Resume command does not change the Read mode of the banks. If the suspended bank was in Read Status Register, Read Electronic signature, or Read CFI Query mode, the bank remains in that mode and outputs the corresponding data. If a Program command is issued during a Block Erase Suspend, then the erase cannot be resumed until the program operation has completed. See Appendix C, Figure 22: Program Suspend & Resume flowchart and pseudo code and Figure 24: Erase Suspend & Resume flowchart and pseudo code for flowcharts for using the Program/Erase Resume command. 4.13 Protection Register Program command The Protection Register Program command is used to program the user segments of the Protection Register and the two Protection Register Locks. The device features 16 OTP segments of 128 bits and one OTP segment of 64 bits, as shown in Figure 4: Protection Register memory map. The segments are programmed one word at a time. When shipped, all bits in the segment are set to `1'. The user can only program the bits to `0'. The following two Bus Write cycles are required to issue the Protection Register Program command: The first bus cycle sets up the Protection Register Program command. The second latches the address and data to be programmed to the Protection Register and starts the Program/Erase Controller. Read operations to the bank being programmed output the Status Register content after the Program operation has started. Attempting to program a previously protected Protection Register results in a Status Register error. The Protection Register Program cannot be suspended. Dual operations between the Parameter Bank and the Protection Register memory space are not allowed (see Table 15: Dual operation limitations for details). The two Protection Register Locks are used to protect the OTP segments from further modification. The protection of the OTP segments is not reversible. Refer to Figure 4: Protection Register memory map and Table 8: Protection Register locks for details on the Lock bits. See Appendix C, Figure 26: Protection Register Program flowchart and pseudo code for a flowchart for using the Protection Register Program command. 27/110 Command interface 4.14 M58LT128HST, M58LT128HSB Set Configuration Register command The Set Configuration Register command is used to write a new value to the Configuration Register. The following two Bus Write cycles are required to issue the Set Configuration Register command. The first cycle sets up the Set Configuration Register command and the address corresponding to the Configuration Register content. The second cycle writes the Configuration Register data and the Confirm command. The Configuration Register data must be written as an address during the bus write cycles, such as A0 = CR0, A1 = CR1, ..., A15 = CR15. Addresses A16-A22 are ignored. Read operations output the array content after the Set Configuration Register command is issued. The Read Electronic Signature command is required to read the updated contents of the Configuration Register. 4.15 Block Protect command The Block Protect command is used to protect a block and prevent Program or Erase operations from changing the data in it. All blocks are protected after power-up or reset. The following two Bus Write cycles are required to issue the Block Protect command: The first bus cycle sets up the Block Protect command. The second Bus Write cycle latches the block address and protects the block. Once the command has been issued, subsequent Bus Read operations read the Status Register. The protection status can be monitored for each block using the Read Electronic Signature command. Refer to Section 9: Block protection for a detailed explanation. See Appendix C, Figure 25: Protect/Unprotect operation flowchart and pseudo code for a flowchart for using the Block Protect command. 4.16 Block Unprotect command The Block Unprotect command is used to unprotect a block, allowing the block to be programmed or erased. The following two Bus Write cycles are required to issue the Block Unprotect command: The first bus cycle sets up the Block Unprotect command. The second Bus Write cycle latches the block address and unprotects the block. Once the command has been issued, subsequent Bus Read operations read the Status Register. The protection status can be monitored for each block using the Read Electronic Signature command. Refer to Section 9: Block protection for a detailed explanation and Appendix C, Figure 25: Protect/Unprotect operation flowchart and pseudo code for a flowchart for using the Block Unprotect command. 28/110 M58LT128HST, M58LT128HSB Command interface Standard commands(1) Table 5. Commands Cycles Bus operations 1st cycle 2nd cycle Op. Add Data Op. Add Data Read Array 1+ Write BKA FFh Read WA RD Read Status Register 1+ Write BKA 70h Read BKA(2) SRD Read BKA (2) ESD Read BKA(2) QD Read Electronic Signature 1+ Write BKA 90h Read CFI Query 1+ Write BKA 98h Clear Status Register 1 Write X 50h Block Erase 2 Write BKA or BA(3) 20h Write BA D0h Program 2 Write BKA or WA(3) 40h or 10h Write WA PD Write BA E8h Write BA n Write PA1 PD1 Write PA2 PD2 Write PAn+1 PDn+1 Write X D0h Buffer Program(4) n+4 Program/Erase Suspend 1 Write X B0h Program/Erase Resume 1 Write X D0h Protection Register Program 2 Write PRA C0h Write PRA PRD Set Configuration Register 2 Write CRD 60h Write CRD 03h Block Protect 2 Write BKA or BA(3) 60h Write BA 01h Block Unprotect 2 Write BKA or BA(3) 60h Write BA D0h 1. X = `Don't Care', WA = word Address in targeted bank, RD = Read Data, SRD = Status Register Data, ESD = Electronic Signature Data, QD = Query Data, BA = Block Address, BKA = Bank Address, PD = Program Data, PRA = Protection Register Address, PRD = Protection Register Data, CRD = Configuration Register Data. 2. Must be same bank as in the first cycle. The signature addresses are listed in Table 7. 3. Any address within the bank can be used. 4. n+1 is the number of words to be programmed. 29/110 Command interface Table 6. M58LT128HST, M58LT128HSB Factory commands Command Cycles Bus Write operations(1) Phase 1st Add Blank Check Setup 2nd 3rd Data Add Data Add Data 2 BA BCh BA CBh 2 BKA or WA(2) 80h WA1 D0h WA1 PD1 WA1 PD2 WA1 PD3 NOT BA1(4) X Buffer Enhanced Program/ 32 Factory Verify(3) Program Exit 1 Final -1 Add Final Data Add Data WA1 PD31 WA1 PD32 1. WA = word Address in targeted bank, BKA = Bank Address, PD = Program Data, BA = Block Address, X = `Don't Care'. 2. Any address within the bank can be used. 3. The Program/Verify phase can be executed any number of times as long as the data is to be programmed to the same block. 4. WA1 is the Start Address, NOT BA1 = Not Block Address of WA1. Table 7. Electronic signature codes Code Address (h) Data (h) Bank Address + 000 0020 Top Bank Address + 001 88D6 (M58LT128HST) Bottom Bank Address + 001 88D7 (M58LT128HSB) Protected Block Address + 002 0000 Bank Address + 005 CR(1) Manufacturer code Device code Block protection Unprotected Configuration Register Numonyx Factory Default Protection Register PR0 Lock OTP Area Permanently Protected 0001 0002 Bank Address + 080 0000 Bank Address + 081 Bank Address + 084 Unique Device Number Bank Address + 085 Bank Address + 088 OTP Area Protection Register PR1 through PR16 Lock Bank Address + 089 PRLD(1) Protection Registers PR1-PR16 Bank Address + 08A Bank Address + 109 OTP Area Protection Register PR0 1. CR = Configuration Register, PRLD = Protection Register Lock Data. 30/110 M58LT128HST, M58LT128HSB Figure 4. Command interface Protection Register memory map PROTECTION REGISTERS 109h PR16 User Programmable OTP 102h 91h PR1 User Programmable OTP 8Ah Protection Register Lock 89h 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 88h PR0 User Programmable OTP 85h 84h Unique device number 81h 80h Protection Register Lock 1 0 AI07563 31/110 Command interface Table 8. M58LT128HST, M58LT128HSB Protection Register locks Lock Description Number Lock 1 Address 80h Bits Bit 0 Preprogrammed to protect unique device number, address 81h to 84h in PR0 Bit 1 Protects 64 bits of OTP segment, address 85h to 88h in PR0 Bits 2 to 15 reserved 32/110 Bit 1 Protects 128 bits of OTP segment PR2 Bit 2 Protects 128 bits of OTP segment PR3 ---- 89h Protects 128 bits of OTP segment PR1 ---- Lock 2 Bit 0 Bit 13 Protects 128 bits of OTP segment PR14 Bit 14 Protects 128 bits of OTP segment PR15 Bit 15 Protects 128 bits of OTP segment PR16 M58LT128HST, M58LT128HSB 5 Status Register Status Register The Status Register provides information on the current or previous Program or Erase operations. The Read Status Register command reads the contents of the Status Register (refer to Section 4.2: Read Status Register command for more details. To output the contents, the Status Register is latched and updated on the falling edge of the Chip Enable or Output Enable signals, and can be read until Chip Enable or Output Enable returns to VIH. The Status Register can only be read using single Asynchronous or Single Synchronous reads. If no Read Array command has been issued, Bus Read operations from any address within the bank always read the Status Register during Program and Erase operations. The various bits convey information about the status and any errors of the operation. Bits SR7, SR6, SR2, and SR0 give information on the status of the device and are set and reset by the device. Bits SR5, SR4, SR3, and SR1 give information about any errors; they are set by the device but must be reset by issuing a Clear Status Register command or a hardware reset. If an error bit is set to `1' the Status Register should be reset before issuing another command. The bits in the Status Register are summarized in Table 9: Status Register bits. Refer to Table 9 in conjunction with the following text descriptions. 5.1 Program/Erase Controller status bit (SR7) The Program/Erase Controller status bit indicates whether the Program/Erase Controller is active or inactive in any bank. When the Program/Erase Controller status bit is Low (set to `0'), the Program/Erase Controller is active. When the bit is High (set to `1'), the Program/Erase Controller is inactive and the device is ready to process a new command. The Program/Erase Controller status bit is Low immediately after a Program/Erase Suspend command is issued, until the Program/Erase Controller pauses. After the Program/Erase Controller pauses, the bit is High. 5.2 Erase Suspend status bit (SR6) The Erase Suspend status bit indicates that an erase operation has been suspended. When the Erase Suspend status bit is High (set to `1'), a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. The Erase Suspend status bit should only be considered valid when the Program/Erase Controller status bit is High (Program/Erase Controller inactive). SR6 is set within the Erase Suspend latency time of the Program/Erase Suspend command being issued; therefore, the memory may still complete the operation rather than entering the Suspend mode. When a Program/Erase Resume command is issued, the Erase Suspend status bit returns Low. 33/110 Status Register 5.3 M58LT128HST, M58LT128HSB Erase/Blank Check status bit (SR5) The Erase/Blank Check status bit is used to identify if there was an error during a Block Erase operation. When the Erase/Blank Check status bit is High (set to `1'), the Program/Erase Controller has applied the maximum number of pulses to the block and still failed to verify that it has erased correctly. The Erase/Blank Check status bit should be read once the Program/Erase Controller status bit is High (Program/Erase Controller inactive). The Erase/Blank Check status bit is also used to indicate whether an error occurred during the Blank Check operation. If the data at one or more locations in the block where the Blank Check command has been issued is different from FFFFh, SR5 is set to '1'. Once set High, the Erase/Blank Check status bit must be set Low by a Clear Status Register command or a hardware reset before a new erase command is issued, otherwise the new command appears to fail. 5.4 Program status bit (SR4) The Program status bit is used to identify if there was an error during a Program operation. The Program status bit should be read once the Program/Erase Controller status bit is High (Program/Erase Controller inactive). When the Program status bit is High (set to `1'), the Program/Erase Controller has applied the maximum number of pulses to the word and still failed to verify that it has programmed correctly. Attempting to program a '1' to an already programmed bit while VPP = VPPH also sets the Program status bit High. If VPP is different from VPPH, SR4 remains Low (set to '0') and the attempt is not shown. Once set High, the Program status bit must be set Low by a Clear Status Register command or a hardware reset before a new Program command is issued, otherwise the new command appears to fail. 5.5 VPP status bit (SR3) The VPP status bit is used to identify an invalid voltage on the VPP pin during Program and Erase operations. The VPP pin is only sampled at the beginning of a Program or Erase operation. Program and Erase operations are not guaranteed if VPP becomes invalid during an operation. When the VPP status bit is Low (set to `0'), the voltage on the VPP pin was sampled at a valid voltage. When the VPP status bit is High (set to `1'), the VPP pin has a voltage that is below the VPP Lockout Voltage, VPPLK. This means the memory is protected and Program and Erase operations cannot be performed. Once set High, the VPP status bit must be set Low by a Clear Status Register command or a hardware reset before a new Program or Erase command is issued, otherwise the new command appears to fail. 34/110 M58LT128HST, M58LT128HSB 5.6 Status Register Program Suspend status bit (SR2) The Program Suspend status bit indicates that a Program operation has been suspended. The Program Suspend status bit should only be considered valid when the Program/Erase Controller status bit is High (Program/Erase Controller inactive). When the Program Suspend status bit is High (set to `1'), a Program/Erase Suspend command has been issued and the memory is waiting for a Program/Erase Resume command. SR2 is set within the Program Suspend latency time of the Program/Erase Suspend command being issued; therefore,the memory may still complete the operation rather than entering Suspend mode. When a Program/Erase Resume command is issued, the Program Suspend status bit returns Low. 5.7 Block Protection status bit (SR1) The Block Protection status bit is used to identify if a Program or Block Erase operation has tried to modify the contents of a protected block. When the Block Protection status bit is High (set to `1'), a Program or Erase operation has been attempted on a protected block. Once set High, the Block Protection status bit must be set Low by a Clear Status Register command or a hardware reset before a new Program or Erase command is issued, otherwise the new command appears to fail. 5.8 Bank Write/Multiple Word Program status bit (SR0) The Bank Write status bit indicates whether the addressed bank is programming or erasing. In Buffer Enhanced Factory Program mode the Multiple Word Program bit shows if the device is ready to accept a new word to be programmed to the memory array. The Bank Write status bit should only be considered valid when the Program/Erase Controller Status SR7 is Low (set to `0'). When both the Program/Erase Controller status bit and the Bank Write status bit are Low (set to `0'), the addressed bank is executing a Program or Erase operation. When the Program/Erase Controller status bit is Low (set to `0') and the Bank Write status bit is High (set to `1'), a program or erase operation is being executed in a bank other than the one being addressed. In Buffer Enhanced Factory Program mode, if Multiple Word Program status bit is Low (set to `0'), the device is ready for the next word. If the Multiple Word Program status bit is High (set to `1'), the device is not ready for the next word. For further details on how to use the Status Register, see the Flowcharts and Pseudocodes provided in Appendix C. 35/110 Status Register M58LT128HST, M58LT128HSB Table 9. Bit Status Register bits Name Type SR7 P/E.C. Status Status SR6 SR5 Erase Suspend Status Status Erase/Blank Check Status Error SR4 Program Status SR3 VPP Status SR2 SR1 Logic Level(1) Definition '1' Ready '0' Busy '1' Erase suspended '0' Erase In progress or completed '1' Erase/Blank Check error '0' Erase/Blank Check success '1' Program error '0' Program success '1' VPP invalid, abort '0' VPP OK '1' Program suspended '0' Program in progress or completed '1' Program/Erase on protected block, abort '0' No operation to protected blocks Error Error Program Suspend Status Status Block Protection Status Error SR7 = `1' Not allowed '1' Bank Write Status SR7 = `0' Program or Erase operation in a bank other than the addressed bank SR7 = `1' No Program or Erase operation in the device SR7 = `0' Program or Erase operation in addressed bank Status '0' SR0 SR7 = `1' Not allowed Multiple Word Program Status (Buffer Enhanced Factory Program mode) '1' Status 1. Logic level '1' is High, '0' is Low. 36/110 The device is NOT ready for the next SR7 = `0' buffer loading or is going to exit the BEFP mode SR7 = `1' The device has exited the BEFP mode SR7 = `0' The device is ready for the next Buffer loading '0' M58LT128HST, M58LT128HSB 6 Configuration Register Configuration Register The Configuration Register is used to configure the type of bus access that the memory performs. Refer to Chapter 7: Read modes for details on Read operations. The Configuration Register is set through the Command Interface using the Set Configuration Register command. After a reset or power-up, the device is configured for Asynchronous Read (CR15 = 1). The Configuration Register bits are described in Table 11 and specify the selection of the burst length, burst type, burst X latency, and the Read operation. Refer to Figures 5 and 6 for examples of synchronous burst configurations. 6.1 Read Select bit (CR15) The Read Select bit, CR15, is used to switch between Asynchronous and Synchronous Read operations. When the Read Select bit is set to '1', Read operations are asynchronous; when the Read Select bit is set to '0', Read operations are synchronous. Synchronous Burst Read is supported in both parameter and main blocks, and can be performed across banks. On reset or power-up the Read Select bit is set to '1' for asynchronous access. 6.2 X-Latency bits (CR13-CR11) The X-Latency bits are used during Synchronous Read operations to set the number of clock cycles between the address being latched and the first data becoming available. Refer to Figure 5: X-latency and data output configuration example. For correct operation the X-Latency bits can only assume the values in Table 11: Configuration Register. Table 10 shows how to set the X-Latency parameter, taking into account the speed class of the device and the frequency used to read the Flash memory in Synchronous mode. Table 10. X-Latency Settings fmax tKmin X-Latency min 30 MHz 33 ns 3 40 MHz 25 ns 4 52 MHz 19 ns 5 37/110 Configuration Register 6.3 M58LT128HST, M58LT128HSB Wait Polarity bit (CR10) The Wait Polarity bit is used to set the polarity of the Wait signal used in Synchronous Burst Read mode. During Synchronous Burst Read mode the Wait signal indicates whether the data output is valid or a WAIT state must be inserted. When the Wait Polarity bit is set to `0' the Wait signal is active Low. When the Wait Polarity bit is set to `1' the Wait signal is active High. 6.4 Data Output Configuration bit (CR9) The Data Output Configuration bit is used to configure the output to remain valid for either one or two clock cycles during Synchronous mode. When the Data Output Configuration bit is '0' the output data is valid for one clock cycle; when the Data Output Configuration bit is '1' the output data is valid for two clock cycles. The Data Output Configuration bit must be configured using the following condition: tK > tKQV + tQVK_CPU where: tK is the clock period tQVK_CPU is the data setup time required by the system CPU tKQV is the clock to data valid time. If this condition is not satisfied, the Data Output Configuration bit should be set to `1' (two clock cycles). Refer to Figure 5: X-latency and data output configuration example. 6.5 Wait Configuration bit (CR8) The Wait Configuration bit is used to control the timing of the Wait output pin, WAIT, in Synchronous Burst Read mode. When WAIT is asserted, Data is Not Valid and when WAIT is de-asserted, Data is Valid. When the Wait Configuration bit is Low (set to '0'), the Wait output pin is asserted during the WAIT state. When the Wait Configuration bit is High (set to '1'), the Wait output pin is asserted one data cycle before the WAIT state. 6.6 Burst Type bit (CR7) The Burst Type bit determines the sequence of addresses read during Synchronous Burst Reads. The Burst Type bit is High (set to '1') because the memory only outputs from sequential addresses. See Table 12: Burst type definition for the sequence of addresses output from a given starting address in Sequential mode. 38/110 M58LT128HST, M58LT128HSB 6.7 Configuration Register Valid Clock Edge bit (CR6) The Valid Clock Edge bit, CR6, is used to configure the active edge of the Clock, K, during Synchronous Read operations. When the Valid Clock Edge bit is Low (set to '0') the falling edge of the Clock is the active edge. When the Valid Clock Edge bit is High (set to '1') the rising edge of the Clock is the active edge. 6.8 Wrap Burst bit (CR3) The Wrap Burst bit, CR3, is used to select between wrap and no wrap. Synchronous Burst reads can be confined inside the 4, 8 or 16 word boundary (wrap) or overcome the boundary (no wrap). When the Wrap Burst bit is Low (set to `0') the Burst Read wraps. When it is High (set to `1') the Burst Read does not wrap. 6.9 Burst length bits (CR2-CR0) The Burst Length bits are used to set the number of words to be output during a Synchronous Burst Read operation as result of a single address latch cycle. They can be set for 4 words, 8 words, 16 words or continuous burst, where all the words are read sequentially. In Continuous Burst mode the burst sequence can cross bank boundaries. In continuous burst mode, in 4, 8 or 16 words no-wrap, depending on the starting address, the device asserts the WAIT signal to indicate that a delay is necessary before the data is output. If the starting address is shifted by 1, 2 or 3 positions from the four-word boundary, WAIT is asserted for 1, 2 or 3 clock cycles, respectively, when the burst sequence crosses the first 16-word boundary. This indicates that the device needs an internal delay to read the successive words in the array. WAIT is only asserted once during a continuous burst access. See also Table 12: Burst type definition. CR14, CR5 and CR4 are reserved for future use. 39/110 Configuration Register Table 11. Bit CR15 CR14 CR13-CR11 M58LT128HST, M58LT128HSB Configuration Register Description Value Description 0 Synchronous Read 1 Asynchronous Read (Default at power-on) 010 2 clock latency(1) 011 3 clock latency 100 4 clock latency 101 5 clock latency 110 6 clock latency 111 7 clock latency (default) Read Select Reserved X-Latency Other configurations reserved CR10 CR9 CR8 CR7 CR6 CR5-CR4 CR3 CR2-CR0 0 WAIT is active Low 1 WAIT is active High (default) 0 Data held for one clock cycle 1 Data held for two clock cycles (default)(1) 0 WAIT is active during WAIT state 1 WAIT is active one data cycle before WAIT state(1) (default) 0 Reserved 1 Sequential (default) 0 Falling Clock edge 1 Rising Clock edge (default) 0 Wrap 1 No Wrap (default) 001 4 words 010 8 words 011 16 words 111 Continuous (default) Wait Polarity Data Output Configuration Wait Configuration Burst Type Valid Clock Edge Reserved Wrap Burst Burst Length 1. The combination X-Latency = 2, Data held for two clock cycles and Wait active one data cycle before the WAIT state is not supported. 40/110 M58LT128HST, M58LT128HSB Wrap Mode Table 12. Start Add Configuration Register Burst type definition Sequential Continuous Burst 4 words 8 words 16 words 0 0-1-2-3 0-1-2-3-4-5-67 0-1-2-3-4-5-6-7-8-9-1011-12-13-14-15 0-1-2-3-4-5-6... 1 1-2-3-0 1-2-3-4-5-6-70 1-2-3-4-5-6-7-8-9-1011-12-13-14-15-0 1-2-3-4-5-6-7-...15-WAIT-16-1718... 2 2-3-0-1 2-3-4-5-6-7-01 2-3-4-5-6-7-8-9-10-1112-13-14-15-0-1 2-3-4-5-6-7...15-WAIT-WAIT-1617-18... 3 3-0-1-2 3-4-5-6-7-0-1- 3-4-5-6-7-8-9-10-11-122 13-14-15-0-1-2 7-4-5-6 7-0-1-2-3-4-56 3-4-5-6-7...15-WAIT-WAITWAIT-16-17-18... ... 7 7-8-9-10-11-12-13-1415-0-1-2-3-4-5-6 7-8-9-10-11-12-13-14-15-WAITWAIT-WAIT-16-17... ... 12 12-13-14-15-16-17-18... 13 13-14-15-WAIT-16-17-18... 14 14-15-WAIT-WAIT-16-17-18.... 15 15-WAIT-WAIT-WAIT-16-17-18... 41/110 Configuration Register Mode Table 12. Start Add M58LT128HST, M58LT128HSB Burst type definition (continued) Sequential Continuous Burst 4 words 8 words 16 words 0 0-1-2-3 0-1-2-3-4-5-67 0-1-2-3-4-5-6-7-8-9-1011-12-13-14-15 1 1-2-3-4 1-2-3-4-5-6-78 1-2-3-4-5-6-7-8-9-1011-12-13-14-15-WAIT16 2 2-3-4-5 2-3-4-5-6-7-89... 2-3-4-5-6-7-8-9-10-1112-13-14-15-WAITWAIT-16-17 3 3-4-5-6 3-4-5-6-7-8-910 3-4-5-6-7-8-9-10-11-1213-14-15-WAIT-WAITWAIT-16-17-18 7-8-9-10 7-8-9-10-1112-13-14 7-8-9-10-11-12-13-1415-WAIT-WAIT-WAIT16-17-18-19-20-21-22 12 12-13-1415 12-13-14-1516-17-18-19 12-13-14-15-16-17-1819-20-21-22-23-24-2526-27 13 13-14-15WAIT-16 13-14-15WAIT-16-1718-19-20 13-14-15-WAIT-16-1718-19-20-21-22-23-2425-26-27-28 14 14-15WAITWAIT-1617 14-15-WAITWAIT-16-1718-19-20-21 14-15-WAIT-WAIT-1617-18-19-20-21-22-2324-25-26-27-28-29 15 15-WAITWAITWAIT-1617-18 15-WAITWAIT-WAIT16-17-18-1920-21-22 15-WAIT-WAIT-WAIT16-17-18-19-20-21-2223-24-25-26-27-28-2930 No-wrap ... 42/110 7 ... Same as for wrap (wrap /no wrap has no effect on continuous burst) M58LT128HST, M58LT128HSB Figure 5. Configuration Register X-latency and data output configuration example X-latency 1st cycle 2nd cycle 3rd cycle 4th cycle K E L A22-A0 tDELAY VALID ADDRESS tAVK_CPU tQVK_CPU tK tKQV tACC tQVK_CPU DQ15-DQ0 VALID DATA VALID DATA AI10542 1. The settings shown are X-latency = 4, Data Output held for one clock cycle. Figure 6. Wait configuration example E K L A22-A0 DQ15-DQ0 VALID ADDRESS VALID DATA VALID DATA NOT VALID VALID DATA WAIT CR8 = '0' CR10 = '0' WAIT CR8 = '1' CR10 = '0' WAIT CR8 = '0' CR10 = '1' WAIT CR8 = '1' CR10 = '1' AI06972 43/110 Read modes 7 M58LT128HST, M58LT128HSB Read modes Read operations can be performed in two different ways depending on the settings in the Configuration Register. If the clock signal is `don't care' for the data output, the Read operation is asynchronous. If the data output is synchronized with clock, the Read operation is synchronous. The Read mode and format of the data output are determined by the Configuration Register. (See Section 6: Configuration Register for details). All banks support both asynchronous and Synchronous Read operations. 7.1 Asynchronous Read mode In Asynchronous Read operations the clock signal is `don't care'. The device outputs the data corresponding to the address latched; that is the memory array, Status Register, Common Flash Interface, or Electronic Signature depending on the command issued. CR15 in the Configuration Register must be set to `1' for synchronous operations. Asynchronous Read operations can be performed in two different ways, Asynchronous Random Access Read and Asynchronous Page Read. Only Asynchronous Page Read takes full advantage of the internal page storage so different timings are applied. In Asynchronous Read mode a page of data is internally read and stored in a page buffer. The page has a size of 4 words and is addressed by address inputs A0 and A1. The first Read operation within the page has a longer access time (tAVQV, random access time). Subsequent reads within the same page have much shorter access times (tAVQV1, page access time). If the page changes, then the normal, longer timings apply again. The device features an Automatic Standby mode. During Asynchronous Read operations, after a bus inactivity of 150 ns, the device automatically switches to the Automatic Standby mode. In this situation, the power consumption is reduced to the standby value and the outputs are still driven. In Asynchronous Read mode, the WAIT signal is always de-asserted. See Table 22: Asynchronous Read AC characteristics, Figure 9: Asynchronous random access Read AC waveforms, and Figure 10: Asynchronous Page Read AC waveforms for details. 44/110 M58LT128HST, M58LT128HSB 7.2 Read modes Synchronous Burst Read mode In Synchronous Burst Read mode the data is output in bursts synchronized with the clock. It is possible to perform Burst reads across bank boundaries. Synchronous Burst Read mode can only be used to read the memory array. For other Read operations, such as Read Status Register, Read CFI and Read Electronic Signature, then Single Synchronous Read or Asynchronous Random Access Read must be used. In Synchronous Burst Read mode the flow of the data output depends on parameters that are configured in the Configuration Register. A burst sequence starts at the first clock edge (rising or falling depending on Valid Clock Edge bit CR6 in the Configuration Register) after the falling edge of Latch Enable or Chip Enable, whichever occurs last. Addresses are internally incremented and data is output on each data cycle after a delay, which depends on the X-latency bits CR13-CR11 of the Configuration Register. The number of words to be output during a Synchronous Burst Read operation can be configured as 4 words, 8 words, 16 words or Continuous (Burst Length bits CR2-CR0). The data can be configured to remain valid for one or two clock cycles (Data Output Configuration bit CR9). The order of the data output can be modified through the Wrap Burst bit in the Configuration Register. The burst sequence is sequential and can be confined inside the 4-, 8- or 16-word boundary (wrap) or overcome the boundary (no wrap). The WAIT signal may be asserted to indicate to the system that an output delay occurs. This delay depends on the starting address of the burst sequence and on the burst configuration. WAIT is asserted during the X-latency, the WAIT state, and at the end of a 4-, 8- and 16word burst. It is only de-asserted when output data is valid. In Continuous Burst Read mode a WAIT state occurs when crossing the first 16-word boundary. If the starting address is aligned to the burst length (4-, 8- or 16-words), the wrapped configuration has no impact on the output sequence. The WAIT signal can be configured to be active Low or active High by setting CR10 in the Configuration Register. See Table 23: Synchronous Read AC characteristics and Figure 11: Synchronous Burst Read AC waveforms for details. 45/110 Read modes 7.2.1 M58LT128HST, M58LT128HSB Synchronous Burst Read Suspend A Synchronous Burst Read operation can be suspended, freeing the data bus for other higher priority devices. It can be suspended during the initial access latency time (before data is output) or after the device has output data. When the Synchronous Burst Read operation is suspended, internal array sensing continues and any previously latched internal data is retained. A burst sequence can be suspended and resumed as often as required as long as the operating conditions of the device are met. A Synchronous Burst Read operation is suspended when Chip Enable, E, is Low and the current address has been latched (on a Latch Enable rising edge or on a valid clock edge). The Clock signal is then halted at VIH or at VIL, and Output Enable, G, goes High. When Output Enable, G, becomes Low again and the Clock signal restarts, the Synchronous Burst Read operation resumes exactly where it stopped. WAIT reverts to high-impedance whenever Chip Enable, E, or Output Enable, G, goes High. See Table 23: Synchronous Read AC characteristics and Figure 13: Synchronous Burst Read Suspend AC waveforms for details. 7.3 Single Synchronous Read mode Single Synchronous Read operations are similar to Synchronous Burst Read operations except that the memory outputs the same data to the end of the operation. Synchronous Single Reads are used to read the Electronic Signature, Status Register, CFI, Block Protection Status, Configuration Register Status or Protection Register. When the addressed bank is in Read CFI, Read Status Register, or Read Electronic Signature mode, the WAIT signal is asserted during the X-latency, the WAIT state, and at the end of a 4-, 8and 16-word burst. It is only de-asserted when output data are valid. See Table 23: Synchronous Read AC characteristics and Figure 12: Single Synchronous Read AC waveforms for details. 46/110 M58LT128HST, M58LT128HSB 8 Dual operations and multiple bank architecture Dual operations and multiple bank architecture The multiple bank architecture of the M58LT128HST/B gives greater flexibility for software developers to split the code and data spaces within the memory array. The dual operations feature simplifies the software management of the device by allowing code to be executed from one bank while another bank is being programmed or erased. The dual operations feature means that while programming or erasing in one bank, read operations are possible in another bank with zero latency (only one bank at a time is allowed to be in Program or Erase mode). If a read operation is required in a bank, which is programming or erasing, the program or erase operation can be suspended. Also if the suspended operation was Erase then a Program command can be issued to another block. This means the device can have one block in Erase Suspend mode, one programming, and other banks in Read mode. Bus Read operations are allowed in another bank between setup and confirm cycles of Program or Erase operations. By using a combination of these features, Read operations are possible at any moment in the M58LT128HST/B device. Dual operations between the parameter bank and either of the CFI, the OTP or the electronic signature memory space are not allowed. Table 15 shows which dual operations are allowed or not between the CFI, the OTP, the electronic signature locations, and the memory array. Table 13 and Table 14 show the dual operations possible in other banks and in the same bank. Table 13. Dual operations allowed in other banks Commands allowed in another bank Status of bank Read Array Read Read Read Status CFI Electronic Register Query Signature Program, Buffer Program Block Erase Program Program /Erase /Erase Suspend Resume Idle Yes Yes Yes Yes Yes Yes Yes Yes Programming Yes Yes Yes Yes - - Yes - Erasing Yes Yes Yes Yes - - Yes - Program suspended Yes Yes Yes Yes - - - Yes Erase suspended Yes Yes Yes Yes Yes - - Yes 47/110 Dual operations and multiple bank architecture Table 14. M58LT128HST, M58LT128HSB Dual operations allowed in same bank Commands allowed in same bank Status of bank Idle Programming Erasing Read Array Read Read Read Status CFI Electronic Register Query Signature Program, Buffer Program Block Erase Program Program /Erase /Erase Suspend Resume Yes Yes Yes Yes Yes Yes Yes Yes - (1) Yes Yes Yes - - Yes - - (1) Yes Yes Yes - - Yes - Program suspended Yes(2) Yes Yes Yes - - - Yes Erase suspended Yes(2) Yes Yes Yes Yes(3) - - Yes 1. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase has completed. 2. The Read Array command is accepted but the data output is not guaranteed in the block that is being erased, or in the word that is being programmed. 3. Not allowed in the block that is being erased or in the word that is being programmed. Table 15. Dual operation limitations Commands allowed Read main blocks Current status Programming/erasing parameter blocks Located in parameter bank Programming/ erasing main Not located in blocks parameter bank Programming OTP 48/110 Read CFI/OTP/ electronic signature Read parameter blocks No Located in parameter bank Not located in parameter bank No No Yes Yes No No Yes Yes Yes Yes In different bank only No No No No M58LT128HST, M58LT128HSB 9 Block protection Block protection The M58LT128HST/B features an instant, individual block protection scheme that allows any block to be protected or unprotected with no latency. This protection scheme has two levels of protection. Protect/unprotect: this first level allows software only control of block protection. VPP VPPLK : the second level offers a complete hardware protection against Program and Erase operations on all blocks. The protection status of each block can be set to protected and unprotected. Appendix C, Figure 25 shows a flowchart for the protection operations. 9.1 Protection status The protection status of every block can be read in the Read Electronic Signature mode of the device. To enter this mode, issue the Read Electronic Signature command. Subsequent reads at the address specified in Table 7 output the protection status of that block. The protection status is represented by DQ0. DQ0 indicates the block protect/unprotect status. It is set by the Protect command and cleared by the Unprotect command. The following sections explain the operation of the protection system. 9.2 Protected state The default state of all blocks on power-up or after a hardware reset is protected (state = 1). Protected blocks are fully protected from Program or Erase operations. Any Program or Erase operations attempted on a protected block return an error in the Status Register. The state of a protected block can be changed to unprotected using the appropriate software commands. An unprotected block can be protected by issuing the Protect command. 9.3 Unprotected state Unprotected blocks (state = 0) can be programmed or erased. All unprotected blocks return to the protected state after a hardware reset or when the device is powered-down. The state of an unprotected block can be changed to protected using the appropriate software commands. A protected block can be unprotected by issuing the Unprotect command. 49/110 Block protection 9.4 M58LT128HST, M58LT128HSB Protection operations during Erase Suspend Changes to the block protection state can be made during an Erase Suspend by using the standard protection command sequences to unprotect or protect a block. This is useful in the case where another block needs to be updated while an Erase operation is in progress. To change block protection during an Erase operation, first write the Erase Suspend command, then check the Status Register until it indicates that the Erase operation has been suspended. Next, write the desired Protect command sequence to a block and the protection status changes. After completing any desired Protect, Read, or Program operations, resume the Erase operation with the Erase Resume command. If a block is protected during an Erase Suspend of the same block, the Erase operation completes when the erase is resumed. Protection operations cannot be performed during a Program Suspend operation. 50/110 M58LT128HST, M58LT128HSB 10 Program and erase times and endurance cycles Program and erase times and endurance cycles The program and erase times and the number of program/erase cycles per block are shown in Table 16. Exact erase times may change depending on the memory array condition. The best case is when all the bits in the block are at `0' (preprogrammed). The worst case is when all the bits in the block are at `1' (not preprogrammed). Usually, the system overhead is negligible with respect to the erase time. In the M58LT128HST/B the maximum number of program/erase cycles depends on the VPP voltage supply used. Table 16. Program/erase times and endurance cycles(1) (2) Parameter Typ Typical after 100kW/E Cycles Max Unit 0.4 1 2.5 s Preprogrammed 1.2 3 4 s Not preprogrammed 1.5 4 s Word program 12 180 s Buffer program 12 180 s Condition Min Parameter block (16 Kword) Erase Main block (64 Kword) VPP = VDD Single word Program(3) Buffer (32 words) (Buffer Program) 384 s Main block (64 Kword) 768 ms Program 5 10 s Erase 5 20 s Suspend latency Program/erase cycles (per block) Main blocks 100,000 cycles Parameter blocks 100,000 cycles 51/110 Program and erase times and endurance cycles M58LT128HST, M58LT128HSB Program/erase times and endurance cycles(1) (2) (continued) Table 16. Parameter Condition Typ Typical after 100kW/E Cycles Max Unit 0.4 2.5 s 1 4 s Word program 10 170 s Buffer enhanced factory program(4) 2.5 s Buffer program 80 s 80 s Buffer program 160 ms Buffer enhanced factory program 160 ms Buffer program 1.28 s Buffer enhanced factory program 1.28 s Parameter block (16 Kword) Min Erase Main block (64 Kword) VPP = VPPH Single word (3) Buffer (32 words) Buffer enhanced factory program Program Main Block (64 Kwords) Bank (8 Mbits) Program/erase cycles (per block) Main blocks 1000 cycles Parameter blocks 2500 cycles Main blocks 16 ms Parameter blocks 4 ms Blank check 1. TA = -40 to 85C; VDD = 1.7 V to 2 V; VDDQ = 2.7 V to 3.6 V. 2. Values are liable to change with the external system-level overhead (command sequence and Status Register polling execution). 3. Excludes the time needed to execute the command sequence. 4. This is an average value on the entire device. 52/110 M58LT128HST, M58LT128HSB 11 Maximum rating Maximum rating Stressing the device above the rating listed in the absolute maximum ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer to the Numonyx SURE Program and other relevant quality documents. Table 17. Absolute maximum ratings Value Symbol Parameter Unit Min Max Ambient operating temperature -40 85 C TBIAS Temperature under bias -40 85 C TSTG Storage temperature -65 125 C VIO Input or output voltage -0.5 3.8 V VDD Supply voltage -0.2 2.5 V Input/output supply voltage -0.2 4.2 V Program voltage -0.2 10 V Output short circuit current 100 mA Time for VPP at VPPH 100 hours TA VDDQ VPP IO tVPPH 53/110 DC and AC parameters 12 M58LT128HST, M58LT128HSB DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables that follow are derived from tests performed under the measurement conditions summarized in Table 18: Operating and AC measurement conditions. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 18. Operating and AC measurement conditions M58LT128HST/B Parameter 85 Units Min Max VDD supply voltage 1.7 2.0 V VDDQ supply voltage 2.7 3.6 V VPP supply voltage (factory environment) 8.5 9.5 V VPP supply voltage (application environment) -0.4 VDDQ+0.4 V Ambient operating temperature -40 85 C Load capacitance (CL) 30 Input rise and fall times 5 Input pulse voltages Input and output timing ref. voltages Figure 7. ns 0 to VDDQ V VDDQ/2 V AC measurement I/O waveform VDDQ VDDQ/2 0V AI06161 54/110 pF M58LT128HST, M58LT128HSB Figure 8. DC and AC parameters AC measurement load circuit VDDQ VDDQ VDD 22k DEVICE UNDER TEST CL 0.1F 22k 0.1F CL includes JIG capacitance Table 19. Symbol CIN COUT AI12842 Capacitance(1) Parameter Input capacitance Output capacitance Test Condition Min Max Unit VIN = 0V 6 8 pF VOUT = 0V 8 12 pF 1. Sampled only, not 100% tested. 55/110 DC and AC parameters Table 20. Symbol M58LT128HST, M58LT128HSB DC characteristics - currents Parameter Test Condition ILI Input leakage current ILO Max Unit 0V VIN VDDQ 1 A Output leakage current 0V VOUT VDDQ 1 A Supply current Asynchronous Read (f=5 MHz) E = VIL, G = VIH 14 16 mA 4 word 13 17 mA 8 word 15 19 mA 16 word 17 21 mA Continuous 21 26 mA 4 word 16 19 mA 8 word 19 23 mA 16 word 22 26 mA Continuous 23 28 mA Supply current Synchronous Read (f = 40 MHz) IDD1 Supply current Synchronous Read (f = 52 MHz) IDD2 Supply current (Reset) RP = VSS 0.2V 25 75 A IDD3 Supply current (Standby) E = VDDQ 0.2V K=VSS 25 75 A IDD4 Supply current (Automatic Standby) E = VIL, G = VIH 25 75 A VPP = VPPH 8 20 mA VPP = VDD 10 25 mA VPP = VPPH 8 20 mA VPP = VDD 10 25 mA Program/erase in one bank, Asynchronous Read in another bank 24 41 mA Program/erase in one bank, Synchronous Read (continuous f=52 MHz) in another bank 33 53 mA E = VDDQ 0.2V K=VSS 25 75 A VPP = VPPH 2 5 mA VPP = VDD 0.2 5 A VPP = VPPH 2 5 mA VPP = VDD 0.2 5 A VPP supply current (Read) VPP VDD 0.2 5 A VPP supply current (Standby) VPP VDD 0.2 5 A Supply current (Program) IDD5(1) Supply current (Erase) Supply current IDD6(1),(2) (Dual operations) IDD7(1) Supply current Program/Erase Suspended (standby) VPP supply current (Program) IPP1(1) VPP supply current (Erase) IPP2 IPP3(1) 1. Sampled only, not 100% tested. 2. VDD Dual Operation current is the sum of Read and Program or Erase currents. 56/110 Typ M58LT128HST, M58LT128HSB Table 21. Symbol DC and AC parameters DC characteristics - voltages Parameter Test Condition Min Typ Max Unit VIL Input low voltage 0 0.4 V VIH Input high voltage VDDQ -0.4 VDDQ + 0.4 V VOL Output low voltage IOL = 100A 0.1 V VOH Output high voltage IOH = -100A VDDQ -0.1 VPP1 VPP program voltage-logic Program, Erase 1.3 3 3.6 V VPPH VPP program voltage factory Program, Erase 8.5 9.0 9.5 V VPPLK Program or Erase lockout 0.4 V VLKO VDD lock voltage 1 V V 57/110 58/110 Hi-Z Hi-Z tGLTV tELQX tELTV tGLQV tGLQX tELQV tLLQV tAVQV tLHAX tEHQZ tEHQX tEHTZ tGHQZ tGHQX tAXQX VALID VALID tGHTZ Notes: 1. Write Enable, W, is High, WAIT is active Low. 2. Latch Enable, L, can be kept Low (also at board level) when the Latch Enable function is not required or supported. WAIT(1) DQ0-DQ15 G E tELLH tLLLH tAVLH VALID AI09817 Figure 9. L(2) A0-A22 tAVAV DC and AC parameters M58LT128HST, M58LT128HSB Asynchronous random access Read AC waveforms M58LT128HST, M58LT128HSB DC and AC parameters Figure 10. Asynchronous Page Read AC waveforms A2-A22 VALID ADDRESS tAVAV A0-A1 VALID ADDRESS VALID ADD. VALID ADD. VALID ADD. tLHAX tAVLH L tLLLH tLLQV tELLH E tELQV tELQX G tGLTV tELTV WAIT(1) Hi-Z tGLQV tGLQX tAVQV1 VALID DATA DQ0-DQ15 Outputs Valid Address Latch Enabled VALID DATA VALID DATA Valid Data VALID DATA Standby AI13570b 1. WAIT is active Low. 59/110 DC and AC parameters Table 22. M58LT128HST, M58LT128HSB Asynchronous Read AC characteristics M58LT128HST/B Symbol Alt Parameter Unit 85 tAVAV tRC Address Valid to Next Address Valid Min 85 ns tAVQV tACC Address Valid to Output Valid (Random) Max 85 ns tAVQV1 tPAGE Address Valid to Output Valid (Page) Max 25 ns tAXQX(1) tOH Address Transition to Output Transition Min 0 ns Chip Enable Low to Wait Valid Max 17 ns Read Timings tELTV tELQV(2) tCE Chip Enable Low to Output Valid Max 85 ns tELQX(1) tLZ Chip Enable Low to Output Transition Min 0 ns Chip Enable High to Wait Hi-Z Max 17 ns tEHTZ tEHQX(1) tOH Chip Enable High to Output Transition Min 0 ns (1) tHZ Chip Enable High to Output Hi-Z Max 17 ns tGLQV(2) tOE Output Enable Low to Output Valid Max 25 ns tGLQX(1) tOLZ Output Enable Low to Output Transition Min 0 ns Output Enable Low to Wait Valid Max 17 ns tEHQZ tGLTV (1) tOH Output Enable High to Output Transition Min 0 ns tGHQZ(1) tDF Output Enable High to Output Hi-Z Max 17 ns Output Enable High to Wait Hi-Z Max 17 ns tGHQX Latch Timings tGHTZ tAVLH tAVADVH Address Valid to Latch Enable High Min 10 ns tELLH tELADVH Chip Enable Low to Latch Enable High Min 10 ns tLHAX tADVHAX Latch Enable High to Address Transition Min 9 ns Min 10 ns Max 85 ns tLLLH tLLQV tADVLADVH Latch Enable Pulse Width tADVLQV Latch Enable Low to Output Valid (Random) 1. Sampled only, not 100% tested. 2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV. 60/110 Hi-Z tELKH Hi-Z tLLLH Address Latch tKHAX tAVKH tLLKH tAVLH VALID ADDRESS X Latency tGLTV tGLQX Note 2 Note 1 VALID Valid Data Flow tKHTV tKHQV VALID Note 2 tKHTX tKHQX VALID Boundary Crossing Note 2 NOT VALID Note 1. The number of clock cycles to be inserted depends on the X-latency set in the Burst Configuration Register. 2. The WAIT signal can be configured to be active during wait state or one cycle before. WAIT signal is active Low. 3. Address latched and data output on the rising clock edge. 4. Either the rising or the falling edge of the clock signal, K, can be configured as the active edge. Here, the active edge of K is the rising one. WAIT G E K(4) L A0-A22 DQ0-DQ15 Data Valid tGHQZ tGHQX AI09819c Standby tEHTZ tEHQZ tEHQX tEHEL VALID M58LT128HST, M58LT128HSB DC and AC parameters Figure 11. Synchronous Burst Read AC waveforms 61/110 DC and AC parameters M58LT128HST, M58LT128HSB Figure 12. Single Synchronous Read AC waveforms A0-A22 VALID ADDRESS tAVKH L tLLKH K(2) tELKH tKHQV tELQV E tGLQV tGLQX G tELQX DQ0-DQ15 Hi-Z tGHTZ VALID tKHTV tGLTV WAIT(1,2) Hi-Z Ai12359 1. The WAIT signal is configured to be active during wait state. WAIT signal is active Low. 2. Address latched and data output on the rising clock edge. Either the rising or the falling edge of the clock signal, K, can be configured as the active edge. Here, the active edge is the rising one. 62/110 tELKH Hi-Z Hi-Z tLLLH tKHAX tAVKH tLLKH tAVLH VALID ADDRESS tGLTV tGLQV tGLQX Note 1 tKHQV VALID VALID tGHTZ tGHQZ Note 3 VALID VALID tGHQX tEHEL tEHQZ tEHQX Notes 1. The number of clock cycles to be inserted depends on the X-latency set in the Configuration Register. 2. The WAIT signal is configured to be active during wait state. WAIT signal is active Low. 3. The CLOCK signal can be held high or low. 4. Address latched and data output on the rising clock edge. Either the rising or the falling edge of the clock signal, K, can be configured as the active edge. Here, the active edge is the rising one. WAIT(2) G E K(4) L A0-A22 DQ0-DQ15 AI12366c tEHTZ M58LT128HST, M58LT128HSB DC and AC parameters Figure 13. Synchronous Burst Read Suspend AC waveforms 63/110 DC and AC parameters M58LT128HST, M58LT128HSB Figure 14. Clock input AC waveform tKHKL tKHKH tf tr tKLKH AI06981 Table 23. Synchronous Read AC characteristics(1) (2) M58LT128HST/B Symbol Alt Parameter Unit Clock Specifications Synchronous Read Timings 85 tAVKH tAVCLKH Address Valid to Clock High Min 9 ns tELKH tELCLKH Chip Enable Low to Clock High Min 9 ns tEHEL Chip Enable Pulse Width (subsequent synchronous reads) Min 20 ns tEHTZ Chip Enable High to Wait Hi-Z Max 17 ns tKHAX tCLKHAX Clock High to Address Transition Min 10 ns tKHQV tKHTV tCLKHQV Clock High to Output Valid Clock High to WAIT Valid Max 17 ns tKHQX tKHTX tCLKHQX Clock High to Output Transition Clock High to WAIT Transition Min 3 ns tLLKH tADVLCLKH Latch Enable Low to Clock High Min 9 ns tKHKH tCLK Clock Period (f=52 MHz) Min 19 ns tKHKL tKLKH Clock High to Clock Low Clock Low to Clock High Min 6 ns tf tr Clock Fall or Rise Time Max 2 ns 1. Sampled only, not 100% tested. 2. For other timings please refer to Table 22: Asynchronous Read AC characteristics. 64/110 K VPP DQ0-DQ15 W G E L A0-A22 tWHDX CONFIRM COMMAND OR DATA INPUT tWHVPL tELKV tWHEL tWHGL tWHAV tWHAX CMD or DATA VALID ADDRESS tAVWH tVPHWH tWHWL tWHEH tWHLL tWLWH tLHAX COMMAND tLLLH SET-UP COMMAND tDVWH tGHWL tELWL tELLH tAVLH BANK ADDRESS tAVAV Ai12889 tQVVPL STATUS REGISTER STATUS REGISTER READ 1st POLLING tELQV VALID ADDRESS PROGRAM OR ERASE M58LT128HST, M58LT128HSB DC and AC parameters Figure 15. Write AC waveforms, Write Enable controlled 65/110 DC and AC parameters M58LT128HST, M58LT128HSB Write AC characteristics, Write Enable controlled(1) Table 24. M58LT128HST/B Symbol Alt Unit Parameter 85 tAVAV Address Valid to Next Address Valid Min 85 ns tAVLH Address Valid to Latch Enable High Min 10 ns tAVWH(2) Address Valid to Write Enable High Min 50 ns Data Valid to Write Enable High Min 50 ns Chip Enable Low to Latch Enable High Min 10 ns Chip Enable Low to Write Enable Low Min 0 ns tELQV Chip Enable Low to Output Valid Min 85 ns tELKV Chip Enable Low to Clock Valid Min 9 ns tGHWL Output Enable High to Write Enable Low Min 17 ns tLHAX Latch Enable High to Address Transition Min 9 ns tLLLH Latch Enable Pulse Width Min 10 ns Write Enable High to Address Valid Min 0 ns tDVWH tWC tDS tELLH Write Enable Controlled Timings tELWL tWHAV(2) tWHAX(2) tAH Write Enable High to Address Transition Min 0 ns tWHDX tDH Write Enable High to Input Transition Min 0 ns tWHEH tCH Write Enable High to Chip Enable High Min 0 ns Write Enable High to Chip Enable Low Min 25 ns tWHGL Write Enable High to Output Enable Low Min 0 ns tWHLL(3) Write Enable High to Latch Enable Low Min 25 ns tWHWL tWPH Write Enable High to Write Enable Low Min 25 ns tWLWH tWP Write Enable Low to Write Enable High Min 50 ns Output (Status Register) Valid to VPP Low Min 0 ns VPP High to Write Enable High Min 200 ns Write Enable High to VPP Low Min 200 ns tWHEL Protection Timings tCS (3) tQVVPL tVPHWH tWHVPL tVPS 1. Sampled only, not 100% tested. 2. Meaningful only if L is always kept low. 3. tWHEL and tWHLL have this value when reading in the targeted bank or when reading following a Set Configuration Register command. System designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after issuing any command and to delay the first read to any address after issuing a Set Configuration Register command. If the first read after the command is a Read Array operation in a different bank and no changes to the Configuration Register have been issued, tWHEL and tWHLL are 0 ns. 66/110 K VPP DQ0-DQ15 E G W L A0-A22 tGHEL tELEH tLHAX COMMAND SET-UP COMMAND tDVEH tLLLH tELLH tWLEL tAVLH BANK ADDRESS tEHDX tEHEL tEHWH CMD or DATA tEHAX CONFIRM COMMAND OR DATA INPUT tVPHEH tAVEH VALID ADDRESS tAVAV tEHVPL tELKV tWHEL tEHGL tQVVPL STATUS REGISTER STATUS REGISTER READ 1st POLLING tELQV VALID ADDRESS PROGRAM OR ERASE Ai12890 M58LT128HST, M58LT128HSB DC and AC parameters Figure 16. Write AC waveforms, Chip Enable controlled 67/110 DC and AC parameters M58LT128HST, M58LT128HSB Write AC characteristics, Chip Enable controlled(1) Table 25. M58LT128HST/B Symbol Alt Parameter Unit 85 Chip Enable Controlled Timings tAVAV Address Valid to Next Address Valid Min 85 ns tAVEH Address Valid to Chip Enable High Min 50 ns tAVLH Address Valid to Latch Enable High Min 10 ns tDVEH tDS Data Valid to Chip Enable High Min 50 ns tEHAX tAH Chip Enable High to Address Transition Min 0 ns tEHDX tDH Chip Enable High to Input Transition Min 0 ns tEHEL tCPH Chip Enable High to Chip Enable Low Min 25 ns Chip Enable High to Output Enable Low Min 0 ns Chip Enable High to Write Enable High Min 0 ns Chip Enable Low to Clock Valid Min 9 ns Chip Enable Low to Chip Enable High Min 50 ns tELLH Chip Enable Low to Latch Enable High Min 10 ns tELQV Chip Enable Low to Output Valid Min 85 ns tGHEL Output Enable High to Chip Enable Low Min 17 ns tLHAX Latch Enable High to Address Transition Min 9 ns tLLLH Latch Enable Pulse Width Min 10 ns Write Enable High to Chip Enable Low Min 25 ns Write Enable Low to Chip Enable Low Min 0 ns tEHVPL Chip Enable High to VPP Low Min 200 ns tQVVPL Output (Status Register) Valid to VPP Low Min 0 ns VPP High to Chip Enable High Min 200 ns tEHGL tEHWH tCH tELKV tELEH tWHEL tCP (2) tWLEL Protection Timings tWC tVPHEH tCS tVPS 1. Sampled only, not 100% tested. 2. tWHEL has this value when reading in the targeted bank or when reading following a Set Configuration Register command. System designers should take this into account and may insert a software No-Op instruction to delay the first read in the same bank after issuing any command and to delay the first read to any address after issuing a Set Configuration Register command. If the first read after the command is a Read Array operation in a different bank and no changes to the Configuration Register have been issued, tWHEL is 0 ns. 68/110 M58LT128HST, M58LT128HSB DC and AC parameters Figure 17. Reset and power-up AC waveforms tPHWL tPHEL tPHGL tPHLL W, E, G, L tPLWL tPLEL tPLGL tPLLL RP tVDHPH tPLPH VDD, VDDQ Power-Up Reset AI06976 Table 26. Symbol Reset and power-up AC characteristics Parameter tPLWL tPLEL tPLGL tPLLL Reset Low to Write Enable Low, Chip Enable Low, Output Enable Low, Latch Enable Low tPHWL tPHEL tPHGL tPHLL tPLPH(1),(2) tVDHPH(3) Test condition 85 Unit During Program Min 25 s During Erase Min 25 s Read Min 80 ns Other conditions Min 20 s Reset High to Write Enable Low Chip Enable Low Output Enable Low Latch Enable Low Min 30 ns RP Pulse Width Min 50 ns Supply Voltages High to Reset High Min 250 s 1. The device Reset is possible but not guaranteed if tPLPH < 50ns. 2. Sampled only, not 100% tested. 3. It is important to assert RP in order to allow proper CPU initialization during power-up or reset. 69/110 Package mechanical 13 M58LT128HST, M58LT128HSB Package mechanical To meet environmental requirements, Numonyx offers the M58LT128HST and M58LT128HSB devices in ECOPACK(R) packages that have a lead-free, second-level interconnect. The category of second-level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. Figure 18. TBGA64 10 x 13 mm - 8 x 8 active ball array, 1 mm pitch, bottom view package outline D D1 FD FE E SD SE E1 ddd BALL "A1" A e b A2 A1 BGA-Z23 1. Drawing is not to scale. 70/110 M58LT128HST, M58LT128HSB Table 27. Package mechanical TBGA64 10 x 13 mm - 8 x 8 active ball array, 1 mm pitch, package mechanical data millimeters inches Symbol Typ Min A Max Typ Min 1.200 A1 0.300 A2 0.800 b 0.200 0.350 Max 0.0472 0.0118 0.0079 0.0138 0.0138 0.0197 0.0315 0.350 0.500 D 10.000 9.900 10.100 0.3937 0.3898 0.3976 D1 7.000 - - 0.2756 - - ddd 0.100 0.0039 e 1.000 - - 0.0394 - - E 13.000 12.900 13.100 0.5118 0.5079 0.5157 E1 7.000 - - 0.2756 - - FD 1.500 - - 0.0591 - - FE 3.000 - - 0.1181 - - SD 0.500 - - 0.0197 - - SE 0.500 - - 0.0197 - - 71/110 Part numbering 14 M58LT128HST, M58LT128HSB Part numbering Table 28. Ordering information scheme Example: M58LT128HST 8 ZA 6 E Device type M58 Architecture L = multilevel, multiple bank, burst mode Operating voltage T = VDD = 1.7 V to 2.0 V, VDDQ = 2.7 V to 3.6 V Density 128 = 128 Mbit (x16) Technology H = 90nm technology Security S = Secure Parameter location T = Top boot B = Bottom boot Speed 8 = 85 ns Package ZA = TBGA64, 10 x 13 mm, 1 mm pitch Temperature range 6 = -40 to 85C Packing option E = ECOPACK(R) package, standard packing F = ECOPACK(R) package, tape & reel packing T = tape & reel packing Blank = standard packing Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact the Numonyx Sales Office nearest to you. 72/110 M58LT128HST, M58LT128HSB Appendix A Block address tables Block address tables Table 29. Top boot block addresses, M58LT128HST Bank 3 Bank 2 Bank 1 Parameter Bank Bank(1) # Size (Kword) Address range 0 16 7FC000-7FFFFF 1 16 7F8000-7FBFFF 2 16 7F4000-7F7FFF 3 16 7F0000-7F3FFF 4 64 7E0000-7EFFFF 5 64 7D0000-7DFFFF 6 64 7C0000-7CFFFF 7 64 7B0000-7BFFFF 8 64 7A0000-7AFFFF 9 64 790000-79FFFF 10 64 780000-78FFFF 11 64 770000-77FFFF 12 64 760000-76FFFF 13 64 750000-75FFFF 14 64 740000-74FFFF 15 64 730000-73FFFF 16 64 720000-72FFFF 17 64 710000-71FFFF 18 64 700000-70FFFF 19 64 6F0000-6FFFFF 20 64 6E0000-6EFFFF 21 64 6D0000-6DFFFF 22 64 6C0000-6CFFFF 23 64 6B0000-6BFFFF 24 64 6A0000-6AFFFF 25 64 690000-69FFFF 26 64 680000-68FFFF 27 64 670000-67FFFF 28 64 660000-66FFFF 29 64 650000-65FFFF 30 64 640000-64FFFF 31 64 630000-63FFFF 32 64 620000-62FFFF 33 64 610000-61FFFF 34 64 600000-60FFFF 73/110 Block address tables M58LT128HST, M58LT128HSB Table 29. Top boot block addresses, M58LT128HST (continued) Bank 7 Bank 6 Bank 5 Bank 4 Bank(1) 74/110 # Size (Kword) Address range 35 64 5F0000-5FFFFF 36 64 5E0000-5EFFFF 37 64 5D0000-5DFFFF 38 64 5C0000-5CFFFF 39 64 5B0000-5BFFFF 40 64 5A0000-5AFFFF 41 64 590000-59FFFF 42 64 580000-58FFFF 43 64 570000-57FFFF 44 64 560000-56FFFF 45 64 550000-55FFFF 46 64 540000-54FFFF 47 64 530000-53FFFF 48 64 520000-52FFFF 49 64 510000-51FFFF 50 64 500000-50FFFF 51 64 4F0000-4FFFFF 52 64 4E0000-4EFFFF 53 64 4D0000-4DFFFF 54 64 4C0000-4CFFFF 55 64 4B0000-4BFFFF 56 64 4A0000-4AFFFF 57 64 490000-49FFFF 58 64 480000-48FFFF 59 64 470000-47FFFF 60 64 460000-46FFFF 61 64 450000-45FFFF 62 64 440000-44FFFF 63 64 430000-43FFFF 64 64 420000-42FFFF 65 64 410000-41FFFF 66 64 400000-40FFFF M58LT128HST, M58LT128HSB Table 29. Block address tables Top boot block addresses, M58LT128HST (continued) Bank 11 Bank 10 Bank 9 Bank 8 Bank(1) # Size (Kword) Address range 67 64 3F0000-3FFFFF 68 64 3E0000-3EFFFF 69 64 3D0000-3DFFFF 70 64 3C0000-3CFFFF 71 64 3B0000-3BFFFF 72 64 3A0000-3AFFFF 73 64 390000-39FFFF 74 64 380000-38FFFF 75 64 370000-37FFFF 76 64 360000-36FFFF 77 64 350000-35FFFF 78 64 340000-34FFFF 79 64 330000-33FFFF 80 64 320000-32FFFF 81 64 310000-31FFFF 82 64 300000-30FFFF 83 64 2F0000-2FFFFF 84 64 2E0000-2EFFFF 85 64 2D0000-2DFFFF 86 64 2C0000-2CFFFF 87 64 2B0000-2BFFFF 88 64 2A0000-2AFFFF 89 64 290000-29FFFF 90 64 280000-28FFFF 91 64 270000-27FFFF 92 64 260000-26FFFF 93 64 250000-25FFFF 94 64 240000-24FFFF 95 64 230000-23FFFF 96 64 220000-22FFFF 97 64 210000-21FFFF 98 64 200000-20FFFF 75/110 Block address tables M58LT128HST, M58LT128HSB Table 29. Top boot block addresses, M58LT128HST (continued) Bank 15 Bank 14 Bank 13 Bank 12 Bank(1) # Size (Kword) Address range 99 64 1F0000-1FFFFF 100 64 1E0000-1EFFFF 101 64 1D0000-1DFFFF 102 64 1C0000-1CFFFF 103 64 1B0000-1BFFFF 104 64 1A0000-1AFFFF 105 64 190000-19FFFF 106 64 180000-18FFFF 107 64 170000-17FFFF 108 64 160000-16FFFF 109 64 150000-15FFFF 110 64 140000-14FFFF 111 64 130000-13FFFF 112 64 120000-12FFFF 113 64 110000-11FFFF 114 64 100000-10FFFF 115 64 0F0000-0FFFFF 116 64 0E0000-0EFFFF 117 64 0D0000-0DFFFF 118 64 0C0000-0CFFFF 119 64 0B0000-0BFFFF 120 64 0A0000-0AFFFF 121 64 090000-09FFFF 122 64 080000-08FFFF 123 64 070000-07FFFF 124 64 060000-06FFFF 125 64 050000-05FFFF 126 64 040000-04FFFF 127 64 030000-03FFFF 128 64 020000-02FFFF 129 64 010000-01FFFF 130 64 000000-00FFFF 1. There are two Bank Regions: Bank Region 1 contains all the banks that are made up of main blocks only; Bank Region 2 contains the banks that are made up of the parameter and main blocks (Parameter Bank). 76/110 M58LT128HST, M58LT128HSB Table 30. Block address tables Bottom boot block addresses, M58LT128HSB Bank 12 Bank 13 Bank 14 Bank 15 Bank(1) # Size (Kword) Address range 130 64 7F0000-7FFFFF 129 64 7E0000-7EFFFF 128 64 7D0000-7DFFFF 127 64 7C0000-7CFFFF 126 64 7B0000-7BFFFF 125 64 7A0000-7AFFFF 124 64 790000-79FFFF 123 64 780000-78FFFF 122 64 770000-77FFFF 121 64 760000-76FFFF 120 64 750000-75FFFF 119 64 740000-74FFFF 118 64 730000-73FFFF 117 64 720000-72FFFF 116 64 710000-71FFFF 115 64 700000-70FFFF 114 64 6F0000-6FFFFF 113 64 6E0000-6EFFFF 112 64 6D0000-6DFFFF 111 64 6C0000-6CFFFF 110 64 6B0000-6BFFFF 109 64 6A0000-6AFFFF 108 64 690000-69FFFF 107 64 680000-68FFFF 106 64 670000-67FFFF 105 64 660000-66FFFF 104 64 650000-65FFFF 103 64 640000-64FFFF 102 64 630000-63FFFF 101 64 620000-62FFFF 100 64 610000-61FFFF 99 64 600000-60FFFF 77/110 Block address tables M58LT128HST, M58LT128HSB Table 30. Bottom boot block addresses, M58LT128HSB (continued) Bank 8 Bank 9 Bank 10 Bank 11 Bank(1) 78/110 # Size (Kword) Address range 98 64 5F0000-5FFFFF 97 64 5E0000-5EFFFF 96 64 5D0000-5DFFFF 95 64 5C0000-5CFFFF 94 64 5B0000-5BFFFF 93 64 5A0000-5AFFFF 92 64 590000-59FFFF 91 64 580000-58FFFF 90 64 570000-57FFFF 89 64 560000-56FFFF 88 64 550000-55FFFF 87 64 540000-54FFFF 86 64 530000-53FFFF 85 64 520000-52FFFF 84 64 510000-51FFFF 83 64 500000-50FFFF 82 64 4F0000-4FFFFF 81 64 4E0000-4EFFFF 80 64 4D0000-4DFFFF 79 64 4C0000-4CFFFF 78 64 4B0000-4BFFFF 77 64 4A0000-4AFFFF 76 64 490000-49FFFF 75 64 480000-48FFFF 74 64 470000-47FFFF 73 64 460000-46FFFF 72 64 450000-45FFFF 71 64 440000-44FFFF 70 64 430000-43FFFF 69 64 420000-42FFFF 68 64 410000-41FFFF 67 64 400000-40FFFF M58LT128HST, M58LT128HSB Table 30. Block address tables Bottom boot block addresses, M58LT128HSB (continued) Bank 4 Bank 5 Bank 6 Bank 7 Bank(1) # Size (Kword) Address range 66 64 3F0000-3FFFFF 65 64 3E0000-3EFFFF 64 64 3D0000-3DFFFF 63 64 3C0000-3CFFFF 62 64 3B0000-3BFFFF 61 64 3A0000-3AFFFF 60 64 390000-39FFFF 59 64 380000-38FFFF 58 64 370000-37FFFF 57 64 360000-36FFFF 56 64 350000-35FFFF 55 64 340000-34FFFF 54 64 330000-33FFFF 53 64 320000-32FFFF 52 64 310000-31FFFF 51 64 300000-30FFFF 50 64 2F0000-2FFFFF 49 64 2E0000-2EFFFF 48 64 2D0000-2DFFFF 47 64 2C0000-2CFFFF 46 64 2B0000-2BFFFF 45 64 2A0000-2AFFFF 44 64 290000-29FFFF 43 64 280000-28FFFF 42 64 270000-27FFFF 41 64 260000-26FFFF 40 64 250000-25FFFF 39 64 240000-24FFFF 38 64 230000-23FFFF 37 64 220000-22FFFF 36 64 210000-21FFFF 35 64 200000-20FFFF 79/110 Block address tables M58LT128HST, M58LT128HSB Table 30. Bottom boot block addresses, M58LT128HSB (continued) Parameter Bank Bank 1 Bank 2 Bank 3 Bank(1) # Size (Kword) Address range 34 64 1F0000-1FFFFF 33 64 1E0000-1EFFFF 32 64 1D0000-1DFFFF 31 64 1C0000-1CFFFF 30 64 1B0000-1BFFFF 29 64 1A0000-1AFFFF 28 64 190000-19FFFF 27 64 180000-18FFFF 26 64 170000-17FFFF 25 64 160000-16FFFF 24 64 150000-15FFFF 23 64 140000-14FFFF 22 64 130000-13FFFF 21 64 120000-12FFFF 20 64 110000-11FFFF 19 64 1F0000-1FFFFF 18 64 0F0000-0FFFFF 17 64 0E0000-0EFFFF 16 64 0D0000-0DFFFF 15 64 0C0000-0CFFFF 14 64 0B0000-0BFFFF 13 64 0A0000-0AFFFF 12 64 090000-09FFFF 11 64 080000-08FFFF 10 64 070000-07FFFF 9 64 060000-06FFFF 8 64 050000-05FFFF 7 64 040000-04FFFF 6 64 030000-03FFFF 5 64 020000-02FFFF 4 64 010000-01FFFF 3 16 00C000-00FFFF 2 16 008000-00BFFF 1 16 004000-007FFF 0 16 000000-003FFF 1. There are two bank regions: bank region 2 contains all the banks that are made up of main blocks only; bank region 1 contains the banks that are made up of the parameter and main blocks (parameter bank). 80/110 M58LT128HST, M58LT128HSB Appendix B Common Flash Interface Common Flash Interface The Common Flash Interface is a JEDEC-approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information, and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the Read CFI Query Command is issued the device enters CFI Query mode and the data structure is read from the memory. Tables 31, 32, 33, 34, 35, 36, 37, 38, 39 and 40 show the addresses used to retrieve the data. The query data is always presented on the lowest order data outputs (DQ0-DQ7), and the other outputs (DQ8-DQ15) are set to 0. The CFI data structure also contains a security area where a 64-bit unique security number is written (see Figure 4: Protection Register memory map). This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by Numonyx. Issue a Read Array command to return to Read mode. Table 31. Query structure overview Offset Sub-section name Description 000h Reserved Reserved for algorithm-specific information 010h CFI Query Identification String Command set ID and algorithm data offset 01Bh System Interface Information Device timing and voltage information 027h Device Geometry Definition Flash device layout P Primary Algorithm-specific Extended Query table Additional information specific to the primary algorithm (optional) A Alternate Algorithm-specific Extended Query table Additional information specific to the alternate algorithm (optional) Security Code Area Lock Protection Register, unique device number and user-programmable OTP 080h 1. The Flash memory displays the CFI data structure when the CFI Query command is issued. This table lists the main sub-sections detailed in Tables 32, 33, 34 and 35. Query data is always presented on the lowest order data outputs. 81/110 Common Flash Interface Table 32. 82/110 M58LT128HST, M58LT128HSB CFI query identification string Offset Sub-section name Description 000h 0020h Manufacturer code 001h 88D6h 88D7h Device code 002h-00Fh Reserved 010h 0051h 011h 0052h 012h 0059h 013h 0001h 014h 0000h 015h offset = P = 000Ah 016h 0001h 017h 0000h 018h 0000h 019h value = A = 0000h 01Ah 0000h Value Numonyx M58LT128HST M58LT128HSB Top Bottom Reserved "Q" Query unique ASCII string "QRY" "R" "Y" Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm Address for Primary Algorithm extended query table (see Table 35) p = 10Ah Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported NA Address for Alternate Algorithm extended query table NA M58LT128HST, M58LT128HSB Table 33. Common Flash Interface CFI query system interface information Offset Data 01Bh 0017h VDD logic supply minimum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 1.7V 01Ch 0020h VDD logic supply maximum Program/Erase or Write voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 millivolts 2V 01Dh 0085h VPP [programming] supply minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 8.5V 01Eh 0095h VPP [programming] supply maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 millivolts 9.5V 01Fh 0004h Typical timeout per single byte/word program = 2n s 16s 020h 0009h Description Value n Typical timeout for Buffer Program = 2 s 512s 021h 000Ah Typical timeout per individual block erase = 022h 0000h Typical timeout for full chip erase = 2n ms 023h 024h 0004h 0004h 2n ms NA n Maximum timeout for word program = 2 times typical Maximum timeout for Buffer Program = 2n 1s 256 s times typical 8192 s n 025h 0002h Maximum timeout per individual block erase = 2 times typical 4s 026h 0000h Maximum timeout for chip erase = 2n times typical NA 83/110 Common Flash Interface Table 34. Device geometry definition Data 027h 0018h Device size = 2n in number of bytes 028h 029h 0001h 0000h Flash Device Interface Code description 02Ah 02Bh 0006h 0000h Maximum number of bytes in multi-byte program or page = 2n 64 bytes 02Ch 0002h Number of identical size erase block regions within the device bit 7 to 0 = x = number of Erase Block regions 2 02Dh 02Eh 007Eh 0000h Erase Block Region 1 information Number of identical-size erase blocks = 007Eh+1 02Fh 030h 0000h 0002h Erase Block Region 1 information Block size in Region 1 = 0200h * 256 byte 031h 032h 0003h 0000h Erase Block Region 2 information Number of identical-size erase blocks = 0003h+1 033h 034h 0080h 0000h Erase Block Region 2 information Block size in Region 2 = 0080h * 256 byte TOP DEVICES Offset BOTTOM DEVICES 035h 038h Description Reserved Reserved for future erase block region information 02Dh 02Eh 0003h 0000h Erase Block Region 1 information Number of identical-size erase block = 0003h+1 02Fh 030h 0080h 0000h Erase Block Region 1 information Block size in Region 1 = 0080h * 256 bytes 031h 032h 007Eh 0000h Erase Block Region 2 information Number of identical-size erase block = 007Eh+1 033h 034h 0000h 0002h Erase Block Region 2 information Block size in Region 2 = 0200h * 256 bytes 035h 038h 84/110 M58LT128HST, M58LT128HSB Reserved Reserved for future erase block region information Value 16 Mbytes x16 Async. 127 128 Kbyte 4 32 Kbyte NA 4 32 Kbytes 127 128 Kbytes NA M58LT128HST, M58LT128HSB Table 35. Common Flash Interface Primary algorithm-specific extended query table Offset Data (P)h = 10Ah 0050h 0052h Description Value "P" Primary Algorithm extended query table unique ASCII string "PRI" 0049h "R" "I" (P+3)h =10Dh 0031h Major version number, ASCII "1" (P+4)h = 10Eh 0033h Minor version number, ASCII "3" (P+5)h = 10Fh 00E6h Extended query table contents for Primary Algorithm. address (P+5)h contains less significant bytes. 0003h (P+7)h = 111h (P+8)h = 112h 0000h 0000h bit 0 Chip Erase supported(1 = Yes, 0 = No) bit 1 Erase Suspend supported(1 = Yes, 0 = No) bit 2 Program Suspend supported(1 = Yes, 0 = No) bit 3 Legacy Protect/Unprotect supported(1 = Yes, 0 = No) bit 4 Queued Erase supported(1 = Yes, 0 = No) bit 5 Instant individual block protection supported(1 = Yes, 0 = No) bit 6 Protection bits supported(1 = Yes, 0 = No) bit 7 Page mode read supported(1 = Yes, 0 = No) bit 8 Synchronous read supported(1 = Yes, 0 = No) bit 9 Simultaneous operation supported(1 = Yes, 0 = No) bit 10 to 31 Reserved; undefined bits are `0'. If bit 31 is '1' then another 31 bit field of optional features follows at the end of the bit-30 field. No Yes Yes No No Yes Yes Yes Yes Yes Supported Functions after Suspend Read Array, Read Status Register and CFI Query (P+9)h = 113h 0001h bit 0 Program supported after Erase Suspend (1 = Yes, 0 = No) bit 7 to 1 Reserved; undefined bits are `0' (P+A)h = 114h 0003h (P+B)h = 115h 0000h Yes Block Protect Status Defines which bits in the Block Status Register section of the query are implemented. bit 0 Block protect Status Register Protect/Unprotect bit active (1 = Yes, 0 = No) bit 1 Block Protection Status Register Lock-Down bit active (1 = Yes, 0 = No) bit 15 to 2 Reserved for future use; undefined bits are `0' Yes No VDD logic supply optimum Program/Erase voltage (highest performance) (P+C)h = 116h 0018h 1.8V bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV VPP supply optimum Program/Erase voltage (P+D)h = 117h 0090h bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 9V 85/110 Common Flash Interface Table 36. Protection Register information Offset Data (P+E)h = 118h 0002h (P+F)h = 119h (P+12)h = 11Ch 0080h Protection Field 1: Protection description 0000h Bits 0-7 Lower byte of Protection Register address Bits 8-15 Upper byte of Protection Register address 0003h Bits 16-23 2n bytes in factory preprogrammed region 0003h Bits 24-31 2n bytes in user-programmable region (P+13)h = 11Dh 0089h (P+10)h = 11Ah (P+ 11)h = 11Bh (P+14)h = 11Eh 0000h (P+15)h = 11Fh 0000h (P+16)h = 120h 0000h (P+17)h = 121h 0000h (P+18)h = 122h 0000h (P+19)h = 123h 0000h (P+1A)h = 124h 0010h (P+1B)h = 125h 0000h (P+1C)h = 126h 0004h Table 37. Description Number of Protection Register fields in JEDEC ID space. 0000h indicates that 256 fields are available. Value 2 80h 00h 8 bytes 8 bytes 89h Protection Register 2: protection description Bits 0-31 Protection Register address Bits 32-39 n number of factory programmed regions (lower byte) Bits 40-47 n number of factory programmed regions (upper byte) Bits 48-55 2n bytes in factory programmable region Bits 56-63 n number of user programmable regions (lower byte) Bits 64-71 n number of user programmable regions (upper byte) Bits 72-79 2n bytes in user programmable region 00h 00h 00h 0 0 0 16 0 16 Burst Read information Offset 86/110 M58LT128HST, M58LT128HSB Data Description Value (P+1D)h = 127h Page-mode read capability bits 0-7 n' such that 2n HEX value represents the number of 0003h read-page bytes. See offset 0028h for device word width to determine page-mode data output width. (P+1E)h = 128h 0004h (P+1F)h = 129h Synchronous mode read capability configuration 1 bit 3-7 Reserved bit 0-2 n' such that 2n+1 HEX value represents the maximum number of continuous synchronous reads when the device is configured for its maximum word width. A value of 07h indicates that the device is capable of continuous linear 0001h bursts that output data until the internal burst counter reaches the end of the device's burstable address space. This field's 3-bit value can be written directly to the read Configuration Register bit 0-2 if the device is configured for its maximum word width. See offset 0028h for word width to determine the burst data output width. 4 (P+20)h = 12Ah 0002h Synchronous mode read capability configuration 2 8 (P-21)h = 12Bh (P+22)h = 12Ch 0003h Synchronous mode read capability configuration 3 0007h Synchronous mode read capability configuration 4 16 Number of Synchronous mode read configuration fields that follow. 8 bytes 4 Cont. M58LT128HST, M58LT128HSB Table 38. Common Flash Interface Bank and Erase Block region information(1) (2) Flash memory (top) Flash memory (bottom) Description Offset Data Offset Data (P+23)h = 12Dh 02h (P+23)h = 12Dh 02h Number of bank regions within the device 1. The variable P is a pointer which is defined at CFI offset 015h. 2. Bank regions. There are two bank regions, see Table 29 and Table 30. Table 39. Bank and Erase Block region 1 information M58LT128HST (top) M58LT128HSB (bottom) Offset Data Offset Data (P+24)h = 12Eh 0Fh (P+24)h = 12Eh 01h (P+25)h = 12Fh 00h (P+25)h = 12Fh 00h Description Number of identical banks within bank region 1 (P+26)h = 130h (P+27)h = 131h (P+28)h = 132h 11h 00h 00h (P+26)h = 130h (P+27)h = 131h (P+28)h = 132h 11h Number of program or erase operations allowed in bank region 1: Bits 0-3: Number of simultaneous Program operations Bits 4-7: Number of simultaneous Erase operations 00h Number of Program or Erase operations allowed in other banks while a bank in same region is programming Bits 0-3: Number of simultaneous Program operations Bits 4-7: Number of simultaneous Erase operations 00h Number of Program or Erase operations allowed in other banks while a bank in this region is erasing Bits 0-3: Number of simultaneous Program operations Bits 4-7: Number of simultaneous Erase operations Types of Erase Block regions in bank region 1 n = number of Erase Block regions with contiguous same-size erase blocks. Symmetrically blocked banks have one blocking region(2). (P+29)h = 133h 01h (P+29)h = 133h 02h (P+2A)h = 134h 07h (P+2A)h = 134h 03h (P+2B)h = 135h 00h (P+2B)h = 135h 00h (P+2C)h = 136h 00h (P+2C)h = 136h 80h (P+2D)h = 137h 02h (P+2D)h = 137h 00h (P+2E)h = 138h 64h (P+2E)h = 138h 64h (P+2F)h = 139h 00h (P+2F)h = 139h 00h Bank region 1 Erase Block Type 1 Information Bits 0-15: n+1 = number of identical size erase blocks Bits 16-31: nx256 = number of bytes in Erase Block region Bank region 1 (Erase Block Type 1) Minimum block erase cycles x 1000 87/110 Common Flash Interface Table 39. M58LT128HST, M58LT128HSB Bank and Erase Block region 1 information (continued) M58LT128HST (top) Offset (P+30)h = 13Ah (P+31)h = 13Bh Data 01h 03h M58LT128HSB (bottom) Offset Description Data 01h Bank region 1 (Erase Block Type 1): bits per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for "internal ECC used" BIts 5-7: reserved (P+31)h = 13Bh 03h Bank region 1 (Erase Block Type 1): Page mode and Synchronous mode capabilities Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved (P+32)h = 13Ch 06h Bank region 1 Erase Block Type 2 Information (P+33)h = 13Dh 00h (P+34)h = 13Eh 00h (P+35)h = 13Fh 02h Bits 0-15: n+1 = number of identical size Erase Blocks Bits 16-31: nx256 = number of bytes in Erase Block region (P+36)h = 140h 64h (P+37)h = 141h 00h (P+30)h = 13Ah (P+38)h = 142h (P+39)h = 143h Bank region 1 (Erase Block Type 2) Minimum Block Erase cycles x 1000 01h Bank regions 1 (Erase Block Type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in erase region Bit 4: reserved for "internal ECC used" BIts 5-7: reserved 03h Bank region 1 (Erase Block Type 2): Page mode and Synchronous mode capabilities Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved 1. The variable P is a pointer which is defined at CFI offset 015h. 2. Bank regions. There are two bank regions, see Table 29 to Table 30. 88/110 M58LT128HST, M58LT128HSB Table 40. Common Flash Interface Bank and Erase Block region 2 Information M58LT128HST (top) M58LT128HSB (bottom) Offset Data Offset Data (P+32)h = 13Ch 01h (P+3A)h = 144h 0Fh (P+33)h = 13Dh 00h (P+3B)h = 145h 00h Description Number of identical banks within bank region 2 (P+34)h = 13Eh (P+35)h = 13Fh (P+36)h = 140h 11h 00h 00h (P+3C)h = 146h (P+3D)h = 147h (P+3E)h = 148h 11h Number of Program or Erase operations allowed in bank region 2: Bits 0-3: Number of simultaneous Program operations Bits 4-7: Number of simultaneous Erase operations 00h Number of Program or Erase operations allowed in other banks while a bank in this region is programming Bits 0-3: Number of simultaneous Program operations Bits 4-7: Number of simultaneous Erase operations 00h Number of Program or Erase operations allowed in other banks while a bank in this region is erasing Bits 0-3: Number of simultaneous Program operations Bits 4-7: Number of simultaneous Erase operations Types of Erase Block regions in Bank Region 2 n = number of Erase Block regions with contiguous same-size erase blocks. Symmetrically blocked banks have one blocking region.(2) (P+37)h = 141h 02h (P+3F)h = 149h 01h (P+38)h = 142h 06h (P+40)h = 14Ah 07h (P+39)h = 143h 00h (P+41)h = 14Bh 00h (P+3A)h = 144h 00h (P+42)h = 14Ch 00h (P+3B)h = 145h 02h (P+43)h = 14Dh 02h (P+3C)h = 146h 64h (P+44)h = 14Eh 64h (P+3D)h = 147h 00h (P+45)h = 14Fh 00h (P+3E)h = 148h 01h (P+46)h = 150h 01h Bank region 2 Erase Block type 1 Information Bits 0-15: n+1 = number of same-size erase blocks Bits 16-31: nx256 = number of bytes in Erase Block region Bank region 2 (Erase Block type 1) Minimum Block Erase cycles x 1000 Bank region 2 (Erase Block type 1): BIts per cell, internal ECC Bits 0-3: bits per cell in Erase region Bit 4: reserved for "internal ECC used" BIts 5-7: reserved 89/110 Common Flash Interface Table 40. M58LT128HST, M58LT128HSB Bank and Erase Block region 2 Information (continued) M58LT128HST (top) Offset Data (P+3F)h = 149h 03h (P+40)h = 14Ah 03h (P+41)h = 14Bh 00h (P+42)h = 14Ch 80h (P+43)h = 14Dh 00h (P+44)h = 14Eh 64h (P+45)h = 14Fh 00h (P+46)h = 150h (P+47)h = 151h M58LT128HSB (bottom) Offset (P+47)h = 151h Description Data 03h Bank region 2 (Erase Block type 1):Page mode and Synchronous mode capabilities (defined in Table 37) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved Bank region 2 Erase Block type 2 Information Bits 0-15: n+1 = number of same-size erase blocks Bits 16-31: n x 256 = number of bytes in Erase Block region Bank region 2 (Erase Block type 2) Minimum Block Erase cycles x 1000 01h Bank region 2 (Erase Block type 2): BIts per cell, internal ECC Bits 0-3: bits per cell in Erase region Bit 4: reserved for "internal ECC used" BIts 5-7: reserved 03h Bank region 2 (Erase Block type 2): Page mode and Synchronous mode capabilities (defined in Table 37) Bit 0: Page-mode reads permitted Bit 1: Synchronous reads permitted Bit 2: Synchronous writes permitted Bits 3-7: reserved (P+48)h = 152h (P+48)h = 152h Feature Space definitions (P+49)h = 153h (P+43)h = 153h Reserved 1. The variable P is a pointer which is defined at CFI offset 015h. 2. Bank regions. There are two bank regions, see Table 29 and Table 30. 90/110 M58LT128HST, M58LT128HSB Appendix C Flowcharts and pseudo codes Flowcharts and pseudo codes Figure 19. Program flowchart and pseudo code Start program_command (addressToProgram, dataToProgram) {: writeToFlash (addressToProgram, 0x40); /*writeToFlash (addressToProgram, 0x10);*/ /*see note (3)*/ Write 40h or 10h (3) writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/ Write Address & Data do { status_register=readFlash (addressToProgram); "see note (3)"; /* E or G must be toggled*/ Read Status Register (3) SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR3 = 0 NO VPP Invalid Error (1, 2) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.SR4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) YES SR4 = 0 YES SR1 = 0 if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; YES End } AI06170b 1. Status check of SR1 (protected block), SR3 (VPP Invalid) and SR4 (program error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations. 3. Any address within the bank can equally be used. 91/110 Flowcharts and pseudo codes M58LT128HST, M58LT128HSB Figure 20. Blank Check flowchart and pseudo code Start blank_check_command (blockToCheck) { writeToFlash (blockToCheck, 0xBC); Write Block Address & BCh writeToFlash (blockToCheck, 0xCB); /* Memory enters read status state after the Blank Check Command */ Write Block Address & CBh do { status_register = readFlash (blockToCheck); /* see note (1) */ /* E or G must be toggled */ Read Status Register (1) } while (status_register.SR7==0); SR7 = 1 NO YES SR4 = 1 SR5 = 1 SR5 = 0 YES NO Command Sequence Error (2) if (status_register.SR4==1) && (status_register.SR5==1) /* command sequence error */ error_handler () ; Blank Check Error (2) if (status_register.SR5==1) /* Blank Check error */ error_handler () ; End } ai10520c 1. Any address within the bank can equally be used. 2. If an error is found, the Status Register must be cleared before further Program/Erase operations. 92/110 M58LT128HST, M58LT128HSB Flowcharts and pseudo codes Figure 21. Buffer Program flowchart and pseudo code Start Buffer Program E8h Command, Start Address status_register=readFlash (Start_Address); Read Status Register SR7 = 1 Buffer_Program_command (Start_Address, n, buffer_Program[] ) /* buffer_Program [] is an array structure used to store the address and data to be programmed to the Flash memory (the address must be within the segment Start Address and Start Address+n) */ { do {writeToFlash (Start_Address, 0xE8) ; NO } while (status_register.SR7==0); YES writeToFlash (Start_Address, n); Write n(1), Start Address Write Buffer Data, Start Address writeToFlash (buffer_Program[0].address, buffer_Program[0].data); /*buffer_Program[0].address is the start address*/ X=0 X=n x = 0; YES while (x<n) NO Write Next Buffer Data, Next Program Address(2) { writeToFlash (buffer_Program[x+1].address, buffer_Program[x+1].data); x++; X=X+1 } Program Buffer to Flash Confirm D0h writeToFlash (Start_Address, 0xD0); Read Status Register SR7 = 1 do {status_register=readFlash (Start_Address); NO } while (status_register.SR7==0); YES Full Status Register Check(3) full_status_register_check(); } End AI08913b 1. n + 1 is the number of data being programmed. 2. Next program data is an element belonging to buffer_Program[].data; next program address is an element belonging to buffer_Program[].address 3. Routine for Error Check by reading SR3, SR4 and SR1. 93/110 Flowcharts and pseudo codes M58LT128HST, M58LT128HSB Figure 22. Program Suspend & Resume flowchart and pseudo code Start program_suspend_command ( ) { writeToFlash (any_address, 0xB0) ; Write B0h writeToFlash (bank_address, 0x70) ; /* read status register to check if program has already completed */ Write 70h do { status_register=readFlash (bank_address) ; /* E or G must be toggled*/ Read Status Register SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR2 = 1 NO Program Complete if (status_register.SR2==0) /*program completed */ { writeToFlash (bank_address, 0xFF) ; read_data ( ) ; /*The device returns to Read Array (as if program/erase suspend was not issued).*/ Write FFh YES Read Data } else Write FFh { writeToFlash (bank_address, 0xFF) ; Read data from another address read_data ( ); /*read data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume program*/ Write D0h writeToFlash (bank_address, 0x70) ; /*read status register to check if program has completed */ Write 70h(1) } Program Continues with Bank in Read Status Register Mode } AI10117b 1. The Read Status Register command (Write 70h) can be issued just before or just after the Program Resume command. 94/110 M58LT128HST, M58LT128HSB Flowcharts and pseudo codes Figure 23. Block Erase flowchart and pseudo code Start erase_command ( blockToErase ) { writeToFlash (blockToErase, 0x20) ; /*see note (2) */ Write 20h (2) writeToFlash (blockToErase, 0xD0) ; /* Memory enters read status state after the Erase Command */ Write Block Address & D0h do { status_register=readFlash (blockToErase) ; /* see note (2) */ /* E or G must be toggled*/ Read Status Register (2) SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR3 = 0 NO VPP Invalid Error (1) YES Command Sequence Error (1) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; YES SR4, SR5 = 1 if ( (status_register.SR4==1) && (status_register.SR5==1) ) /* command sequence error */ error_handler ( ) ; NO SR5 = 0 NO Erase Error (1) if ( (status_register.SR5==1) ) /* erase error */ error_handler ( ) ; YES SR1 = 0 NO Erase to Protected Block Error (1) if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; YES End } AI10976 1. If an error is found, the Status Register must be cleared before further Program/Erase operations. 2. Any address within the bank can equally be used. 95/110 Flowcharts and pseudo codes M58LT128HST, M58LT128HSB Figure 24. Erase Suspend & Resume flowchart and pseudo code Start erase_suspend_command ( ) { writeToFlash (bank_address, 0xB0) ; Write B0h writeToFlash (bank_address, 0x70) ; /* read status register to check if erase has already completed */ Write 70h do { status_register=readFlash (bank_address) ; /* E or G must be toggled*/ Read Status Register SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR6 = 1 NO Erase Complete if (status_register.SR6==0) /*erase completed */ { writeToFlash (bank_address, 0xFF) ; YES read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/ Write FFh Read data from another block, Program, Set Configuration Register or Block Protect/Unprotect/Lock } else Write D0h Write FFh Erase Continues Read Data { writeToFlash (bank_address, 0xFF) ; read_program_data ( ); /*read or program data from another address*/ writeToFlash (bank_address, 0xD0) ; /*write 0xD0 to resume erase*/ } } AI13893 1. The Read Status Register command (Write 70h) can be issued just before or just after the Erase Resume command. 96/110 M58LT128HST, M58LT128HSB Flowcharts and pseudo codes Figure 25. Protect/Unprotect operation flowchart and pseudo code Start protect_operation_command (address, protect_operation) { writeToFlash (address, 0x60) ; /*configuration setup*/ /* see note (1) */ Write 60h (1) if (protect_operation==PROTECT) /*to protect the block*/ writeToFlash (address, 0x01) ; else if (protect_operation==UNPROTECT) /*to unprotect the block*/ writeToFlash (address, 0xD0) ; Write 01h, D0h writeToFlash (address, 0x90) ; /*see note (1) */ Write 90h (1) Read Block Protect State Protection change confirmed? if (readFlash (address) ! = protection_state_expected) error_handler () ; /*Check the protection state (see Read Block Signature table )*/ NO YES writeToFlash (address, 0xFF) ; /*Reset to Read Array mode*/ /*see note (1) */ Write FFh (1) } End AI12895 1. Any address within the bank can equally be used. 97/110 Flowcharts and pseudo codes M58LT128HST, M58LT128HSB Figure 26. Protection Register Program flowchart and pseudo code Start protection_register_program_command (addressToProgram, dataToProgram) {: writeToFlash (addressToProgram, 0xC0) ; /*see note (3) */ Write C0h (3) writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command*/ Write Address & Data do { status_register=readFlash (addressToProgram) ; /* see note (3) */ /* E or G must be toggled*/ Read Status Register (3) SR7 = 1 NO } while (status_register.SR7== 0) ; YES SR3 = 0 NO VPP Invalid Error (1, 2) if (status_register.SR3==1) /*VPP invalid error */ error_handler ( ) ; NO Program Error (1, 2) if (status_register.SR4==1) /*program error */ error_handler ( ) ; NO Program to Protected Block Error (1, 2) YES SR4 = 0 YES SR1 = 0 if (status_register.SR1==1) /*program to protect block error */ error_handler ( ) ; YES End } AI06177b 1. Status check of SR1 (protected block), SR3 (VPP Invalid) and SR4 (program error) can be made after each program operation or after a sequence. 2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations. 3. Any address within the bank can equally be used. 98/110 M58LT128HST, M58LT128HSB Flowcharts and pseudo codes Figure 27. Buffer Enhanced Factory Program flowchart and pseudo code Start NO writeToFlash (start_address, 0x80) ; Write D0h to Address WA1 writeToFlash (start_address, 0xD0) ; Read Status Register do { do { status_register = readFlash (start_address); SR7 = 0 Initialize count X=0 SR4 = 1 Read Status Register SR3 and SR1for errors Write PDX Address WA1 Exit Increment Count X=X+1 NO Buffer_Enhanced_Factory_Program_Command (start_address, DataFlow[]) { Write 80h to Address WA1 YES NO SETUP PHASE if (status_register.SR4==1) { /*error*/ if (status_register.SR3==1) error_handler ( ) ;/*VPP error */ if (status_register.SR1==1) error_handler ( ) ;/* Protected Block */ PROGRAM AND } VERIFY PHASE while (status_register.SR7==1) x=0; /* initialize count */ do { writeToFlash (start_address, DataFlow[x]); x++; X = 32 NO YES }while (x<32) do { Read Status Register status_register = readFlash (start_address); SR0 = 0 }while (status_register.SR0==1) YES NO Last data? } while (not last data) YES Write FFFFh to Address = NOT WA1 Read Status Register NO writeToFlash (another_block_address, FFFFh) EXIT PHASE do { status_register = readFlash (start_address) SR7 = 1 }while (status_register.SR7==0) YES Full Status Register Check full_status_register_check(); End } AI12898 99/110 Command Interface state tables Appendix D Table 41. M58LT128HST, M58LT128HSB Command Interface state tables Command Interface states - modify table, next state(1) Command Input Current CI State Ready Block Buffer BEFP Read Program Program Erase, (3)(4) Setup Array(2) Setup (3)(4) Setup(3)(4) (FFh) (80h) (10/40h) (E8h) (20h) Ready Program Setup Protect/CR Setup BP Setup Erase Setup BEFP Setup Blank Check setup (BCh) Erase Confirm Read Buffer P/E Resume, Clear Electronic Blank Program, Read Block Status Check Program/ Status Register Signature Unprotect , Read confirm Erase Register (5) confirm, CFI Query (CBh) Suspend (70h) BEFP (50h) (B0h) (90h, 98h) Confirm(3)(4) (D0h) Blank Check setup Ready Ready (unprotect block) Ready (Protect Error) Setup Busy OTP Program OTP Busy OTP Busy IS in OTP Busy OTP Busy Setup Program Busy IS in Program Program Program Busy Busy Busy IS in Program Busy IS in Program Busy Program Busy Program Suspend Program Busy Program Busy PS IS in PS PS IS in Program Suspend PS Program Busy Program Suspend IS in PS Program Suspend Setup Buffer Program Load 1 (give word count load (N-1)); Buffer Load 1 if N=0 go to Buffer Program Confirm. Else (N 0) go to Buffer Program Load 2 (data load) Buffer Load 2 Buffer Program Confirm when count =0; Else Buffer Program Load 2 (note: Buffer Program fails at this point if any block address is different from the first address) Confirm Busy IS in BP Busy Suspend IS in BP Suspend 100/110 IS in OTP Busy OTP Busy Suspend Buffer Program OTP busy IS in OTP busy Busy Ready (Protect Error) Ready (error) in BP BP Busy ISBusy BP Busy BP Busy IS in BP Busy BP Busy Ready (error) BP Suspend Buffer Program Busy Buffer Program Busy BP BP BP IS in BP IS in BP Suspend Suspend Suspend Suspend Suspend BP busy Buffer Program Suspend Buffer Program Suspend M58LT128HST, M58LT128HSB Table 41. Command Interface state tables Command Interface states - modify table, next state(1) (continued) Command Input Current CI State Block Buffer BEFP Read Program Program Erase, (3)(4) Setup Array(2) Setup (3)(4) Setup(3)(4) (FFh) (10/40h) (80h) (E8h) (20h) Setup Busy Erase Erase Busy IS in Erase Busy Blank Check setup (BCh) Ready (error) Erase Busy Erase Busy Erase Busy IS in Erase Busy IS in Erase Busy Suspend Erase Confirm Read Buffer P/E Resume, Clear Electronic Blank Program, Read Block Status Check Program/ Status Register Signature Unprotect , Read confirm Erase Register (5) confirm, CFI Query (CBh) Suspend (70h) BEFP (50h) (B0h) (90h, 98h) Confirm(3)(4) (D0h) Erase Suspend Erase Busy Erase Busy Erase Program BP in ES Suspend in ES IS in Erase Suspend ES Erase Busy IS in ES Erase Suspend Setup Program Busy in Erase Suspend Busy Ready (error) IS in Program Program Busy in Busy in ES ES Program Busy in ES IS in Program Busy in ES Program IS in in Erase Program Suspend busy in ES Erase Suspend Program Busy in ES PS in ES Program Busy in Erase Suspend Program busy in Erase Suspend Suspend PS in ES IS in PS in PS in ES ES IS in Program Suspend in ES PS in ES Program Busy in ES Program Suspend in Erase Suspend IS in PS in ES Program Suspend in Erase Suspend Setup Buffer Program Load 1 in Erase Suspend (give word count load (N-1)); if N=0 go to Buffer Program confirm. Else (N 0) go to Buffer Program Load 2 Buffer Load 1 Buffer Program Load 2 in Erase Suspend (data load) Buffer Buffer Program Confirm in Erase Suspend when count =0; Else Buffer Program Load 2 in Erase Suspend (note: Buffer Program Load 2 fails at this point if any block address is different from the first address) Confirm Buffer Program in Erase Suspend Busy IS in BP busy in ES Erase Suspend (sequence error) BP Busy in ES IS in BP Busy in ES BP busy in ES BP Busy in ES IS in BP busy in ES BP Suspend in ES BP Busy in ES Buffer Program Busy in ES Buffer Program Busy in Erase Suspend BP BP IS in BP BP Suspend Suspend Suspend Suspend IS in BP Suspend Suspend in Erase Suspend in ES in ES in ES in ES IS in BP Suspend in ES Erase Suspend (sequence error) BP Busy in Erase Suspend Buffer Program Suspend in Erase Suspend BP Suspend in Erase Suspend 101/110 Command Interface state tables Table 41. M58LT128HST, M58LT128HSB Command Interface states - modify table, next state(1) (continued) Command Input Current CI State Block Buffer BEFP Read Program Program Erase, (3)(4) Setup Array(2) Setup (3)(4) Setup(3)(4) (FFh) (10/40h) (80h) (E8h) (20h) Setup Blank Check Busy Protect/CR Setup in Erase Suspend Buffer EFP Setup Busy Blank Check setup (BCh) Erase Confirm Read Buffer P/E Resume, Clear Electronic Blank Program, Read Block Status Check Program/ Status Register Signature Unprotect , Read confirm Erase Register (5) confirm, CFI Query (CBh) Suspend (70h) BEFP (50h) (B0h) (90h, 98h) Confirm(3)(4) (D0h) Blank Check busy Ready (error) Blank IS in Blank Check Check busy busy Blank Check busy IS in Blank Check busy Ready (error) Blank Check busy Erase Suspend (Protect Error) Erase Suspend Erase Suspend (Protect Error) Ready (error) BEFP Busy Ready (error) BEFP Busy(6) 1. CI = Command Interface, CR = Configuration register, BEFP = Buffer Enhanced Factory program, P/E C = Program/Erase controller, IS = Illegal State, BP = Buffer Program, ES = Erase Suspend. 2. At power-up, all banks are in Read Array mode. Issuing a Read Array command to a busy bank, results in undetermined data output. 3. The two cycle command should be issued to the same bank address. 4. If the Program/Erase Controller is active, both cycles are ignored. 5. The Clear Status Register command clears the SR error bits except when the Program/Erase Controller is busy or suspended. 6. BEFP is allowed only when Status Register bit SR0 is reset to '0'. BEFP is busy if block address is first BEFP address. Any other commands are treated as data. 102/110 M58LT128HST, M58LT128HSB Table 42. Command Interface state tables Command Interface states - modify table, next output state(1) (2) Command Input Current CI State Erase Confirm P/E Resume, Block Blank Block Buffer Erase, BEFP Check (4) Setup Unprotect Program Setup (5) setup confirm, BEFP (5) (E8h) (80h) (BCh) (10/40h) Confirm(4)(5) (20h) (D0h) Read Program Array Setup(4) (3) (FFh) Read Clear Electronic Blank Program/ Read Status Status signature, Check Erase confirm Suspend Register Register Read CFI Query (CBh) (B0h) (70h) (50h) (90h, 98h) Program Setup Erase Setup OTP Setup Program Setup in Erase Suspend BEFP Setup BEFP Busy Buffer Program Setup Buffer Program Load 1 Buffer Program Load 2 Buffer Program Confirm Status Register Buffer Program Setup in Erase Suspend Buffer Program Load 1 in Erase Suspend Buffer Program Load 2 in Erase Suspend Buffer Program Confirm in Erase Suspend Blank Check setup Protect/CR Setup Protect/CR Setup in Erase Suspend 103/110 Command Interface state tables Table 42. M58LT128HST, M58LT128HSB Command Interface states - modify table, next output state(1) (2) (continued) Command Input Current CI State Erase Confirm Block P/E Resume, Blank Block Buffer Erase, BEFP Check (4) Setup Unprotect Program Setup (5) setup confirm, BEFP (5) (E8h) (80h) (BCh) (10/40h) Confirm(4)(5) (20h) (D0h) Read Program Array Setup(4) (3) (FFh) Read Clear Electronic Blank Program/ Read Status Status signature, Check Erase confirm Suspend Register Register Read CFI Query (CBh) (B0h) (70h) (50h) (90h, 98h) Status Register OTP Busy Ready Program Busy Erase Busy Buffer Program Busy Program/Erase Suspend Buffer Program Suspend Array Status Register Output Unchanged Program Busy in Erase Suspend Output Status Unchang Electronic Register ed Signature/ CFI Buffer Program Busy in Erase Suspend Program Suspend in Erase Suspend Buffer Program Suspend in Erase Suspend Blank Check busy Illegal State Output Unchanged 1. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI mode, depending on the command issued. Each bank remains in its last output state until a new command is issued to that bank. The next state does not depend on the bank output state. 2. CI = Command Interface, CR = Configuration Register, BEFP = Buffer Enhanced Factory Program, Program/Erase Controller = Program/Erase Controller. 3. At power-up, all banks are in Read Array mode. Issuing a Read Array command to a busy bank, results in undetermined data output. 4. The two cycle command should be issued to the same bank address. 5. If the Program/Erase Controller is active, both cycles are ignored. 104/110 M58LT128HST, M58LT128HSB Table 43. Command Interface state tables Command interface states - lock table, next state(1) Command Input Current CI State Protect/CR Setup(2) (60h) OTP Setup(2) (C0h) Ready Protect/CR Setup OTP Setup Protect/CR Setup Busy Block Address (WA0)(3) (XXXXh) Illegal Command(4) Ready P/E C operation completed(5) N/A Ready (Protect error) OTP Busy N/A N/A IS in OTP Busy OTP Busy Ready IS in OTP busy OTP Busy IS Ready Setup Program Busy N/A Busy Program Set CR Confirm (03h) Ready Ready (Protect error) Setup OTP Block Protect Confirm (01h) IS in Program Busy IS in Program busy Suspend Program Busy Ready Program busy IS in PS IS Ready Program Suspend N/A IS in PS Program Suspend Setup Buffer Program Load 1 (give word count load (N-1)); Buffer Load 1 Buffer Program Buffer Program Load 2(6) Exit N/A see note (6) N/A Buffer Load 2 Buffer Program Confirm when count =0; Else Buffer Program Load 2 (note: Buffer Program fails at this point if any block address is different from the first address) N/A Confirm Ready (error) N/A Busy IS in BP Busy IS in Buffer Program busy Suspend Buffer Program Busy Buffer Program Busy IS in BP Suspend Ready IS Ready Buffer Program Suspend N/A IS in BP Suspend Buffer Program Suspend Setup Ready (error) Busy Erase IS in Erase Busy IS in Erase busy Suspend IS in ES N/A Erase Busy Erase Busy Protect/CR Setup in ES IS in ES Ready IS ready Erase Suspend N/A Erase Suspend 105/110 Command Interface state tables Table 43. M58LT128HST, M58LT128HSB Command interface states - lock table, next state(1) (continued) Command Input Current CI State Protect/CR Setup(2) (60h) OTP Setup(2) (C0h) Setup Busy Program in Erase Suspend Set CR Confirm (03h) Block Address (WA0)(3) (XXXXh) Illegal Command(4) P/E C operation completed(5) Program Busy in Erase Suspend IS in Program busy in ES IS in Program busy in ES Suspend Block Protect Confirm (01h) N/A Program Busy in Erase Suspend Program Busy in Erase Suspend IS in PS in ES ES IS in ES Program Suspend in Erase Suspend N/A IS in PS in ES Program Suspend in Erase Suspend Setup Buffer Program Load 1 in Erase Suspend (give word count load (N-1)) Buffer Load 1 Buffer Program in Erase Suspend Buffer Program Load 2 in Erase Suspend(7) Exit see note (7) Buffer Load 2 Buffer Program Confirm in Erase Suspend when count =0; Else Buffer Program Load 2 in Erase Suspend (note: Buffer Program fails at this point if any block address is different from the first address) Confirm Erase Suspend (sequence error) Busy IS in BP busy in ES IS in BP busy in ES Suspend Buffer Program Busy in Erase Suspend BP busy in ES IS in BP suspend in ES N/A ES IS in ES Buffer Program Suspend in Erase Suspend N/A Blank Check IS in BP Suspend in ES Buffer Program Suspend in Erase Suspend Setup Ready (error) Blank Check busy Protect/CR Setup in ES IS in Blank Check busy Erase Suspend (Protect error) Setup N/A Blank Check busy Erase Suspend Ready Erase Suspend (Protect error) Ready (error) N/A N/A BEFP Busy BEFP Busy(8) Exit BEFP Busy(8) N/A 1. CI = Command Interface, CR = Configuration register, BEFP = Buffer Enhanced Factory program, P/E C = Program/Erase controller, IS = Illegal State, BP = Buffer program, ES = Erase suspend, WA0 = Address in a block different from first BEFP address. 2. If the Program/Erase Controller is active, both cycle are ignored. 3. BEFP exit when block address is different from first block address and data are FFFFh. 4. Illegal commands are those not defined in the command set. 5. N/A: not available. In this case the state remains unchanged. 6. If N=0 go to Buffer Program Confirm. Else (not = 0) go to Buffer Program Load 2 (data load) 7. If N=0 go to Buffer Program Confirm in Erase suspend. Else (not =0) go to Buffer Program Load 2 in Erase suspend. 8. BEFP is allowed only when Status Register bit SR0 is set to '0'. BEFP is busy if Block Address is first BEFP Address. Any other commands are treated as data. 106/110 M58LT128HST, M58LT128HSB Table 44. Command Interface state tables Command interface states - lock table, next output state (1) (2) Command Input Current CI State Protect/CR P. E./C. Blank OTP Blank Check Set CR BEFP Illegal Block Protect Setup(3) Operation Check confirm Setup(3) Confirm Exit(4) Command(5) Confirm (01h) (60h) Completed setup (BCh) (C0h) (CBh) (03h) (FFFFh) Program Setup Erase Setup OTP Setup Program Setup in Erase Suspend BEFP Setup BEFP Busy Buffer Program Setup Buffer Program Load 1 Status Register Buffer Program Load 2 Output Unchanged Buffer Program Confirm Buffer Program Setup in Erase Suspend Buffer Program Load 1 in Erase Suspend Buffer Program Load 2 in Erase Suspend Buffer Program Confirm in Erase Suspend Blank Check setup Protect/CR Setup Protect/CR Setup in Erase Suspend Status Register Array Status Register 107/110 Command Interface state tables Table 44. M58LT128HST, M58LT128HSB Command interface states - lock table, next output state (continued)(1) (2) Command Input Current CI State Protect/CR P. E./C. Blank OTP Blank Check Set CR BEFP Block Protect Illegal Setup(3) Operation Check Setup(3) confirm Confirm Exit(4) Confirm (01h) Command(5) Completed (60h) setup (BCh) (C0h) (CBh) (03h) (FFFFh) OTP Busy Ready Program Busy Erase Busy Buffer Program Busy Program/Erase Suspend Buffer Program Suspend Status Register Output Unchanged Array Output Unchanged Program Busy in Erase Suspend Buffer Program Busy in Erase Suspend Program Suspend in Erase Suspend Buffer Program Suspend in Erase Suspend Blank Check busy Illegal State Output Unchanged 1. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI mode, depending on the command issued. Each bank remains in its last output state until a new command is issued to that bank. The next state does not depend on the bank's output state. 2. CI = Command Interface, CR = Configuration Register, BEFP = Buffer Enhanced Factory Program, P/E. C. = Program/Erase Controller. 3. If the Program/Erase Controller is active, both cycles are ignored. 4. BEFP Exit when block address is different from first block address and data are FFFFh. 5. Illegal commands are those not defined in the command set. 108/110 M58LT128HST, M58LT128HSB Revision history Revision history 13-Jun Table 45. Document revision history Date Revision Changes 02-Mar-2007 1 Initial release. 27-Jun-2007 2 - Modified WAIT de-assertion criteria on page 45. - Removed tELTV from waveforms in Figure 11 and Figure 13, and from Table 23. - Modified the tVDHPH parameter values in Table 26. - Added the T packaging option in part numbering information in Table 28. 10-Dec-2007 3 Applied Numonyx branding. 109/110 M58LT128HST, M58LT128HSB Please Read Carefully: INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYXTM PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. 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Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. Copyright (c) 11/5/7, Numonyx, B.V., All Rights Reserved. 110/110