BAV19 / BAV20 / BAV21
BAV19/20/21, Rev. C
BAV19 / 20 / 21
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2001 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage BAV19
BAV20
BAV21
120
200
250
V
V
V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
Tstg Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature 175 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 500 mW
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR Breakdown Voltage BAV19
BAV20
BAV21
IR = 100 µA
IR = 100 µA
IR = 100 µA
120
200
250
V
V
V
VF Forward Voltage IF = 100 mA
IF = 200 mA 1.0
1.25 V
V
IR Reverse Current
BAV19
BAV20
BAV21
VR = 100 V
VR = 100 V, TA = 150°C
VR = 150 V
VR = 150 V, TA = 150°C
VR = 200 V
VR = 200 V, TA = 150°C
100
100
100
100
100
100
nA
µA
nA
µA
nA
µA
CT Total Capacitance VR = 0, f = 1.0 MHz 5.0 pF
trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,
RL = 100Ω 50 ns
BAV19 / BAV20 / BAV21
BAV19/20/21, Rev. C
Typical Characteristics
Small Signal Diode
(continued)
°
275
300
325 Ta=25 C
3 5 10 2 0 3 0 50 1 00
Reverse Voltage, V
R
[V]
Reverse C urrent, IR [uA ]
Figure 1. Reverse V oltage vs Reverse Current
BV - 1.0 to 100uA
0
10
20
30
40
50
55 100
Ta= 25 C
Reverse Current, I
R
[nA ]
Reverse Voltage, V R [V ]
°
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
°
Figure 2. Reverse Current vs Reverse V oltage
IR - 55 to 205 V
20
30
40
50
60
70
80
90
100
180 200 220 240 255
Ta= 25 C
Reverse Current, I
R
[nA]
Reverse Voltage, VR [V]
250
300
350
400
450
1 2 3 5 10 20 30 50 100
Ta= 25 C
Forward Voltage, V
R [mV]
Forward Current, IF [uA]
Figure 3. Reverse Current vs Reverse Roltage
IR - 180 to 225 V
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature Figure 4. Forward V oltage vs Forward Current
VF - 1.0 to 100uA
450
500
550
600
650
700
0.1 0.2 0.3 0.5 1 2 3 5 10
Ta= 25 C
Forward Voltage , V
F [mV]
Forw a rd C urren t, IF [mA]
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
10 20 30 50 100 200 300 500 800
Ta= 25 C
Forward Voltage, V
F [mV]
Fo rward C urrent, IF [m A ]
Figure 5. Forward V oltage vs Forward Current
VF - 0.1 to 10mA
Figure 6. Forward V oltage vs Forward Current
VF - 10 to 800mA
°°
°°
BAV19 / BAV20 / BAV21
BAV19/20/21, Rev. C
Typical Characteristics (continued)
Small Signal Diode
(continued)
°
100
200
300
400
500
600
700
800
900
0.001 0.003 0.01 0.03 0.1 0.3 1 3 10
Ta= -40 C
Ta= 25 C
Ta= +80 C
Forw ard V oltage, V
F
[m V ]
F o rward Cu rre n t, IF [m A ]
Figure 7. Forward V oltage
vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to +80 Deg C)
02468101214
0.8
0.9
1.0
1.1
1.2
1.3 Ta= 25 C
To ta l Ca pa c ita n c e [p F]
Reverse V o ltage [V]
Figure 8. T otal Capacitance
1.0 1.5 2.0 2.5 3.0
20
30
40
50
IF = IR = 30 mA
Rloop = 10 0 O h m s
Reverse Recovery Time [nS]
Reverse Recovery Current, Irr [m A ] 050100150
0
100
200
300
400
I
F(AV)
- AVERAGE RECTIFIED CURRENT - mA
Current [mA]
Ambient Temperature, TA [ C ]
Figure 9. Reverse Recovery Time vs
Reverse Recovery Current Figure 10. Average Rectified Current (IF(AV))
versus Ambient Temperature (TA)
0 50 100 150 200
0
100
200
300
400
500
DO-35 Pkg
SOT-23 Pk g
Power Diss ipation, P
D [mW]
Average Temperature, IO [ C ]
Figure 1 1. Power Derating Curve
°
°
°
°
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Advance Information
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This datasheet contains the design specifications for
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