DESCRIPTION
The
µ
PG2160T5K is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed
for mobile phone and other L, S-band applications.
This device can operate frequency from 0.5 to 3.0 GHz, with low insertion loss and high isolation.
This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) package, and is suitable
for high-density surface mounting.
FEATURES
• Supply voltage : VDD = 2.4 to 2.8 V (2.6 V TYP.)
• Switch control voltage : Vcont (H) = 2.4 to VDD (2.6 V TYP.)
: Vcont (L) = −0.2 to 0.2 V (0 V TYP.)
• Low insertion loss : Lins1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: Lins2 = 0.35 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: Lins3 = 0.40 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: Lins4 = 0.50 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
• High isolation : ISL1 = 25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: ISL2 = 18 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: ISL4 = 13 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
• Handling power : Pin (0.1 dB) = +21.0 dBm TYP. @ f = 2.0/2.5 GHz, VDD = 2.6 V, Vcont (H ) = 2.6 V, Vcont (L) = 0 V
• High-density surface mounting : 6-pi n plastic TSSON package (1.0 × 1.0 × 0.37 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
• W-LAN, WLL and BluetoothTM etc.
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
µ
PG2160T5K-E2
µ
PG2160T5K-E2-A 6-pin plastic TSSON
(Pb-Free) Note G4 • Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2160T5K-A
2006
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
L, S-BAND SINGLE CONTROL SPDT SWITCH
GaAs INTEGRATED CIRCUIT
µ
PG2160T5K
Document No. PG10635EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
Pin No. Pin Name
1 OUTPUT1
2 GND
3 OUTPUT2
4 Vcont
5 INPUT
(Top View) (Bottom View)
1
2
3
4
5
6
1
2
34
5
6
1
2
34
5
6
(Top View)
G4
6 VDD
TRUTH TABLE
Vcont INPUT−OUTPUT1 INPUT−OUTPUT2
High OFF ON
Low ON OFF
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Supply Voltage VDD +6.0 V
Switch Control Voltage Vcont +6.0 V
Input Power Pin +26 dBm
Operating Ambient Temperature TA −45 to +85 °C
Storage Temperature Tstg −55 to +135 °C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter Symbol MIN. TYP. MAX. Unit
Supply Voltage Note VDD 2.4 2.6 2.8 V
Switch Control Voltage (H) Note Vcont (H) 2.4 2.6 VDD V
Switch Control Voltage (L) Vcont (L) −0.2 0 0.2 V
Note V
cont (H) ≤ VDD
Data Sheet PG10635EJ01V0DS
2
µ
PG2160T5K
ELECTRICAL CHARACTERISTICS
(TA = +25 °C, VDD = 2.6 V, V cont (H) = 2.6 V, V cont (L) = 0 V, DC cut capacitors = 56 pF, unless otherwise
specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Insertion Loss 1 Lins1 f = 0.5 to 1.0 GHz − 0.30 0.45
Insertion Loss 2 Lins2 f = 1.0 to 2.0 GHz − 0.35 0.50
Insertion Loss 3 Lins3 f = 2.0 to 2.5 GHz − 0.40 0.55
Insertion Loss 4 Lins4 f = 2.5 to 3.0 GHz − 0.50 0.65
dB
Isolation 1 ISL1 f = 0.5 to 1.0 GHz 22 25 −
Isolation 2 ISL2 f = 1.0 to 2.0 GHz 15 18 −
Isolation 3 ISL3 f = 2.0 to 2.5 GHz 14 17 −
Isolation 4 ISL4 f = 2.5 to 3.0 GHz 10 13 −
dB
Input Return Loss RLin f = 0.5 to 3.0 GHz 15 20 − dB
Output Return Loss RLout f = 0.5 to 3.0 GHz 15 20 − dB
0.1 dB Loss Compression
Input Power Note Pin (0.1 dB) f = 2.0/2.5 GHz +18.0 +21.0 − dBm
2nd Harmonics 2f0 f = 2.0/2.5 GHz, Pin = +10 dBm 65 75 − dBc
3rd Harmonics 3f0 f = 2.0/2.5 GHz, Pin = +10 dBm 65 75 − dBc
Supply Current IDD No signal − 50 100
µ
A
Switch Control Current Icont − 4 20
µ
A
Switch Control Speed tSW 50% CTL to 90/10% RF − 150 − ns
Note Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
Data Sheet PG10635EJ01V0DS 3
µ
PG2160T5K
EVALUATION CIRCUIT
OUTPUT1 OUTPUT2
C
0
C
0
V
DD
INPUT
1 000 pF 1 000 pF
C
0
V
cont
12
56
3
4
Remark C
0 : 56 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PG10635EJ01V0DS
4
µ
PG2160T5K
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
C1
C4
C2
C3
C5
V
cont
OUTPUT2
INPUT
OUTPUT1
V
DD
G4
USING THE NEC EVALUATION BOARD
Symbol Values
C1, C2, C3 56 pF
C4, C5 1 000 pF
Data Sheet PG10635EJ01V0DS 5
µ
PG2160T5K
TYPICAL CHARACTERISTICS (TA = +25°C, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V, DC cut
capacitors = 56 pF, using test fixture, unless otherwise specified)
1.3 3.10.7 1.9 2.50.1
1.3 3.10.7 1.9 2.50.1
1.3 3.10.7 1.9 2.50.1
1.3 3.10.7 1.9 2.50.1
1.3 3.10.7 1.9 2.50.1
1.3 3.10.7 1.9 2.50.1
2.0
2.5
1.0
0.5
0
–1.0
–2.0
–2.5
1.5
–0.5
–1.5
2
1
345
1:
–
0.255 dB
0.5 GHz
2:
–
0.305 dB
1.0 GHz
3:
–
0.355 dB
2.0 GHz
4:
–
0.408 dB
2.5 GHz
5:
–
0.502 dB
3.0 GHz
1:
–
0.255 dB
0.5 GHz
2:
–
0.304 dB
1.0 GHz
3:
–
0.354 dB
2.0 GHz
4:
–
0.408 dB
2.5 GHz
5:
–
0.506 dB
3.0 GHz
2
1
345
40
50
20
10
0
–20
–40
–50
30
–10
–30
1:
–
30.53 dB
0.5 GHz
2:
–
24.659 dB
1.0 GHz
3:
–
19.114 dB
2.0 GHz
4:
–
17.362 dB
2.5 GHz
5:
–
15.87 dB
3.0 GHz
2
1345
40
50
20
10
0
–20
–40
–50
30
–10
–30
1:
–
30.378 dB
0.5 GHz
2:
–
24.496 dB
1.0 GHz
3:
–
18.545 dB
2.0 GHz
4:
–
17.212 dB
2.5 GHz
5:
–
15.717 dB
3.0 GHz
2
145
3
40
50
20
10
0
–20
–40
–50
30
–10
–30 2
1
345
1:
–
18.298 dB
0.5 GHz
2:
–
22.409 dB
1.0 GHz
3:
–
28.233 dB
2.0 GHz
4:
–
31.992 dB
2.5 GHz
5:
–
27.286 dB
3.0 GHz
2
1
345
1:
–
18.557 dB
0.5 GHz
2:
–
23.14 dB
1.0 GHz
3:
–
29.248 dB
2.0 GHz
4:
–
28.445 dB
2.5 GHz
5:
–
23.756 dB
3.0 GHz
40
50
20
10
0
–20
–40
–50
30
–10
–30
2.0
2.5
1.0
0.5
0
–1.0
–2.0
–2.5
1.5
–0.5
–1.5
Insertion Loss L
ins
(dB)
Frequency f (GHz)
INPUT-OUTPUT1
INSERTION LOSS vs. FREQUENCY
Insertion Loss L
ins
(dB)
Frequency f (GHz)
INPUT-OUTPUT2
INSERTION LOSS vs. FREQUENCY
Isolation ISL (dB)
Frequency f (GHz)
INPUT-OUTPUT1
ISOLATION vs. FREQUENCY
Isolation ISL (dB)
Frequency f (GHz)
INPUT-OUTPUT2
ISOLATION vs. FREQUENCY
Input Return Loss RL
in
(dB)
Frequency f (GHz)
INPUT-OUTPUT1
INPUT RETURN LOSS vs. FREQUENCY
Input Return Loss RL
in
(dB)
Frequency f (GHz)
INPUT-OUTPUT2
INPUT RETURN LOSS vs. FREQUENCY
Remark The graphs indicate nominal characteristics.
Data Sheet PG10635EJ01V0DS
6
µ
PG2160T5K
1.3 3.1
0.7 1.9 2.5
0.1 1.3 3.1
0.7 1.9 2.5
0.1
40
50
20
10
0
–20
–40
–50
30
–10
–30
40
50
20
10
0
–20
–40
–50
30
–10
–30
+20+12 +16 +24 +28+8
+35
+30
+25
+20
+15
+10
+5
f = 2.0 GHz
Output Return Loss RLout (dB)
Frequency f (GHz)
INPUT-OUTPUT1
OUTPUT RETURN LOSS vs. FREQUENCY
Output Return Loss RLout (dB)
Frequency f (GHz)
INPUT-OUTPUT2
OUTPUT RETURN LOSS vs. FREQUENCY
Output Power Pout (dBm)
Input Power Pin (dBm)
OUTPUT POWER vs. INPUT POWER
2
1
345
1:
–
18.38 dB
0.5 GHz
2:
–
22.911 dB
1.0 GHz
3:
–
28.715 dB
2.0 GHz
4:
–
30.049 dB
2.5 GHz
5:
–
25.211 dB
3.0 GHz
2
1
345
1:
–
18.646 dB
0.5 GHz
2:
–
23.332 dB
1.0 GHz
3:
–
31.078 dB
2.0 GHz
4:
–
28.398 dB
2.5 GHz
5:
–
23.042 dB
3.0 GHz
Remark The graphs indicate nominal characteristics.
Data Sheet PG10635EJ01V0DS 7
µ
PG2160T5K
MOUNTING PAD DIMENSIONS
6-PIN PLASTIC TSSON (UNIT: mm)
0.31 0.31
0.29 0.29
6–0.22
0.35
0.35
Remark The mounting pad layouts in this document are for reference only.
Data Sheet PG10635EJ01V0DS
8
µ
PG2160T5K
PACKAGE DIMENSIONS
6-PIN PLASTIC TSSON (UNIT: mm)
1.0±0.1
0.35±0.060.35±0.06
0.45 ±0.1
0.13±0.07
0.15
+0.07
–0.05
0.23±0.07
0.175±0.075
(Bottom View)
(Top View)
1.0±0.1
1.0±0.1
1.0±0.1
0.37
+0.03
–0.05
0.15
+0.07
–0.05
Data Sheet PG10635EJ01V0DS 9
µ
PG2160T5K
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10635EJ01V0DS
10
µ
PG2160T5K
Bluetooth is a trademark ow ned by Bluetooth SIG, Inc., U.S.A.
The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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(Note)
•
•
•
•
•
•
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":
Data Sheet PG10635EJ01V0DS 11
µ
PG2160T5K
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
0604
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: contact@ncsd-hk.necel.com
Hong Kong Head Office TEL: +852-3107-7303 FAX: +852-3107-7309
Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office TEL: +82-2-558-2120 FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH http://www.eu.necel.com/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc. http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Compound Semiconductor Devices Division
NEC Electronics Corporation
URL: http://www.ncsd.necel.com/
For further information, please contact
µ
PG2160T5K
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS Concentration Limit per RoHS
(values are not yet fixed) Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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See CEL Terms and Conditions for additional clarification of warranties and liability.
