DMP3017SFGQ-7 - DIODES INC - Product.Network

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

1 of 8

www.diodes.com

September 2015

DMP3017SFGQ

ADVANCE INFO R MA T I O N

30V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI®

Product Summary

V(BR)DSS

RDS(ON) Max

ID Max

TA = +25°C

-30V

10mΩ @ VGS = -10V

-11.5A

18mΩ @ VGS = -4.5V

-8.7A

Description

This MOSFET is designed to minimize the on-state resistance

(RDS(ON)), yet maintain superior switching performance, making it

ideal for high-efficiency power management applications.

Applications

 Backlighting

 Power Management Functions

 DC-DC Converters

Features and Benefits

 Low RDS(ON) – Ensures On-State Losses Are Minimized

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 ESD Protected Gate

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP capable (Note 4)

Mechanical Data

 Case: POWERDI®3333-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

Terminals: Finish – Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.072 grams (Approximate)

Ordering Information (Note 5)

Part Number

Case

Packaging

DMP3017SFGQ-7

POWERDI3333-8

2,000/Tape & Reel

DMP3017SFGQ-13

POWERDI3333-8

3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Bottom View

SSSG

DDDD

Pin 1

Top View

ESD PROTECTED

Equivalent Circuit

D

S

G

Gate Protection

Diode

POWERDI is a registered trademark of Diodes Incorporated.

POWERDI3333-8

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

2 of 8

www.diodes.com

September 2015

DMP3017SFGQ

ADVANCE INFO R MA T I O N

Marking Information

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±25

V

Continuous Drain Current (Note 7) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

ID

-11.5

-9.4

A

t<10s

TA = +25°C

TA = +70°C

ID

-15.2

-12.1

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

-3.0

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

-80

A

Avalanche Current (Note 8) L = 1mH

IAR

14

A

Repetitive Avalanche Energy (Note 8) L = 1mH

EAR

104

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

TA = +25°C

PD

0.94

W

TA = +70°C

0.6

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

137

°C/W

t<10s

82

°C/W

Total Power Dissipation (Note 7)

TA = +25°C

PD

2.2

W

TA = +70°C

1.3

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RθJA

60

°C/W

t<10s

36

°C/W

Thermal Resistance, Junction to Case (Note 7)

RθJC

3.0

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout, please see

http://www.diodes.com/datasheets/ap02001.pdf for latest version.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C

P17= Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 13 = 2013)

WW = Week code (01 ~ 53)

P17

YYWW

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

3 of 8

www.diodes.com

September 2015

DMP3017SFGQ

ADVANCE INFO R MA T I O N

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

-30

—

V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

—

-1

μA

VDS = -24V, VGS = 0V

Gate-Source Leakage

IGSS

—

±10

μA

VGS = ±25V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(th)

-1.0

—

-3.0

V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

8.5

10

mΩ

VGS = -10V, ID = -11.5A

—

15

18

VGS = -4.5V, ID = -8.5A

Forward Transfer Admittance

|Yfs|

—

24

—

S

VDS = -5V, ID = -11.5A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

—

2246

—

pF

VDS = -15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

352

—

pF

Reverse Transfer Capacitance

Crss

—

294

—

pF

Gate resistance

Rg

—

5.1

12

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 5V)

Qg

—

20.5

—

nC

VDS = -15V, ID = -11.5A

Total Gate Charge (VGS = 10V)

Qg

—

41

—

nC

Gate-Source Charge

Qgs

—

7.6

—

nC

Gate-Drain Charge

Qgd

—

8.0

—

nC

Turn-On Delay Time

tD(on)

—

7.5

—

nS

VDD = -15V, VGS = -10V,

RG = 6Ω, ID = -11.5A

Turn-On Rise Time

tr

—

15.4

—

nS

Turn-Off Delay Time

tD(off)

—

45.6

—

nS

Turn-Off Fall Time

tf

—

36.8

—

nS

BODY DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

—

-0.7

—

V

VGS = 0V, IS = -1A

Reverse Recovery Time (Note 9)

trr

—

20

—

nS

IS = -11.5A, dI/dt = 100A/μs

Reverse Recovery Charge (Note 9)

Qrr

—

9.5

—

nC

Notes: 9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

4 of 8

www.diodes.com

September 2015

DMP3017SFGQ

ADVANCE INFO R MA T I O N

-V , DRAIN -SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

-I , DRAIN CURRENT (A)

D

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0 1 2 3 4 5

V = -2.5V

GS

V = -3.0V

GS

V = -3.5V

GS

V = -4.0V

GS

V = -10V

GS

V = -5.5V

GS

V = -5.5V

GS

-V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

-I , DRAIN CURRENT (A)

D

0

5

10

15

20

25

30

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V = -5.0V

DS

-I , DRAIN SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

0.02

0 5 10 15 20 25 30

V = -4.5V

GS

V = -10V

GS

-I , DRAIN SOURCE CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

D

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON) 

0

0.005

0.01

0.015

0.02

0.025

0.03

1 2 3 4 5 6 7 8 9 10

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = -4.5V

GS

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Figure 5 On-Resistance Variation with Temperature

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.6

0.8

1.2

1.4

1.6

1.8

1.0

V = -5V

I = -5A

GS

D

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(on) 

0

0.005

0.01

0.015

0.02

0.025

0.03

V = -10V

I = A

GS

D

-10

V = 5V

I = A

GS

D

-

-5

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

5 of 8

www.diodes.com

September 2015

DMP3017SFGQ

ADVANCE INFO R MA T I O N

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

1.2

1.4

1.6

1.8

2.2

2.4

2.6

2.8

3.0

2.0

1.0

-I = 1mA

D

-I = 250µA

D

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

-I , SOURCE CURRENT (A)

S

T = 25 C

A

0

5

10

15

20

25

30

0 0.3 0.6 0.9 1.2 1.5

100

1000

10000

0 5 10 15 20 25 30

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

C , JUNCTION CAPACITANCE (pF)

T

Ciss

f = 1MHz

Coss

Crss

0

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30 35 40 45

Q (nC)

g, TOTAL GATE CHARGE

Figure 10 Gate Charge

V GATE THRESHOLD VOLTAGE (V)

GS

V = -15V

I = A

DS

D

-1.5

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

DS

-I , DRAIN CURRENT (A)

D

T = 150°C

T = 25°C

J(max)

A

V = -10V

Single Pulse

DUT on 1 * MRP Board

GS

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.01

0.1

1

10

100

0.01 0.1 110 100

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

6 of 8

www.diodes.com

September 2015

DMP3017SFGQ

ADVANCE INFO R MA T I O N

0.0001 0.001 0.01 0.1 1 10 100 1,000

t1, PULSE DURATION TIMES (sec)

Figure 12 Transient Thermal Resistance

0.001

0.01

0.1

r(t), TRANSIENT THERMAL RESISTANCE

1

R (t) = r(t) * R

R = 143°C/W

Duty Cycle, D = t1/ t2





JA JA

JA

D = 0.7

D = 0.9

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

7 of 8

www.diodes.com

September 2015

DMP3017SFGQ

ADVANCE INFO R MA T I O N

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

POWERDI3333-8

POWERDI®3333-8

Dim

Min

Max

Typ

A

0.75

0.85

0.80

A1

0.00

0.05

0.02

A3



0.203

b

0.27

0.37

0.32

b2



0.20

D

3.25

3.35

3.30

D2

2.22

2.32

2.27

E

3.25

3.35

3.30

E2

1.56

1.66

1.61

e



0.65

e1

0.79

0.89

0.84

L

0.35

0.45

0.40

L1



0.39

z



0.515

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

POWERDI3333-8

Dimensions

Value (in mm)

C

0.650

X

0.420

X1

0.420

X2

0.230

X3

2.370

Y

0.700

Y1

1.850

Y2

2.250

Y3

3.700

e1

1

8

D

D2

E

e

b

E2

A

A3

Pin #1 ID

Seating Plane

L(4x)

A1

L1(3x)

b2(4x)

z(4x)

X3

Y3

X

Y

C

Y1

Y2

X1

X2

1

8

POWERDI3333-8

DMP3017SFGQ

Document number: DS38181 Rev. 1 - 2

8 of 8

www.diodes.com

September 2015

DMP3017SFGQ

ADVANCE INFO R MA T I O N

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com