Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Max
16.7 25
40 50
RθJC 1.9 2.5
°C
V
V±20
30
A
-26
134
60
Gate-Source Voltage
Drain-Source Voltage -60
Pulsed Drain Current C
-26
-18
-60
Avalanche Current C
Continuous Drain
Current G
Maximum UnitsParameter
TC=25°C
TC=100°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
ID
PDSM
2.5
A
Repetitive avalanche energy L=0.1mH CmJ
Power Dissipation B
TC=25°C PDW
TC=100°C
Maximum Junction-to-Ambient ASteady-State °C/W
W
TA=70°C 1.6
Junction and Storage Temperature Range -55 to 175
Power Dissipation A
TA=25°C
Maximum Junction-to-Case CSteady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient At ≤ 10s RθJA
°C/W
AOD409
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -60V
ID = -26A (VGS = -10V)
RDS(ON) < 40mΩ (VGS = -10V) @ -20A
RDS(ON) < 55mΩ (VGS = -4.5V)
General Description
The AOD409 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
A
OD409 is Pb-free (meets ROHS & Sony 259
specifications). AOD409L is a Green Product
ordering option. AOD409 and AOD409L are
electrically identical.
G D S
T
O-252
D-PAK
T
op View
Drain Connected to
T
ab
G
D
S
Alpha & Omega Semiconductor, Ltd.
AOD409
Symbol Min Typ Max Units
BVDSS -60 V
-0.003 -1
TJ=55°C -5
IGSS ±100 nA
VGS(th) -1.2 -1.9 -2.4 V
ID(ON) -60 A
32 40
TJ=125°C 53
43 55 mΩ
gFS 32 S
VSD -0.73 -1 V
IS-30 A
Ciss 2977 3600 pF
Coss 241 pF
Crss 153 pF
Rg2 2.4 Ω
Qg(10V) 44 54 nC
Qg(4.5V) 22.2 28 nC
Qgs 9nC
Qgd 10 nC
tD(on) 12 ns
tr14.5 ns
tD(off) 38 ns
tf15 ns
trr 40 50 ns
Qrr 59 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-30V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-30V, ID=-20A
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-30V, RL=1.5Ω,
RGEN=3Ω
Gate resistance VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
mΩ
VGS=-4.5V, ID=-20A
IS=-1A,VGS=0V
VDS=-5V, ID=-20A
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS µA
Gate Threshold Voltage VDS=VGS ID=-250µA
VDS=-48V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
Reverse Transfer Capacitance
IF=-20A, dI/dt=100A/µs
A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3: June 2005
Alpha & Omega Semiconductor, Ltd.
AOD409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
5
10
15
20
25
30
012345
-VGS(Volts)
Figure 2: Transfer Characteristics
-ID(A)
0
10
20
30
40
50
0 5 10 15 20 25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-IS (A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Normalized On-Resistance
VGS=-4.5V
ID=-20A
VGS=-10V
ID=-20A
20
40
60
80
246810
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
ID=-20A
25°C
125°C
0
5
10
15
20
25
30
012345
-VDS (Volts)
Fig 1: On-Region Characteristics
-ID (A)
VGS=-3V
-3.5V
-6V
-10V -4.5V
-5V
-4V
Alpha & Omega Semiconductor, Ltd.
AOD409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40 45 50
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-VGS (Volts)
0
400
800
1200
1600
2000
2400
2800
3200
3600
4000
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitan ce (p F )
Ciss
0
200
400
600
800
1000
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
ZθJC Normalized Transient
Thermal R esi stan ce
Coss Crs
s
0.1
1.0
10.0
100.0
0.1 1 10 100
-VDS (Volts)
-ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100µs
10ms
1ms
DC
RDS(ON)
limited
TJ(Max)=175°C, TA=25°C
VDS=-30V
ID=-20A
A
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=175°C
TA=25°C
10
s
Alpha & Omega Semiconductor, Ltd.
AOD409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
S
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
ZθJA Normalized Transient
Thermal R esi stan ce
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Ton T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
10
15
20
25
30
0.00001 0.0001 0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
-ID(A), Peak Aval an ch e C u r r en t
0
10
20
30
40
50
60
70
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
Current rating -ID(A)
DD
D
A
VBV
IL
t−
⋅
=
TA=25°C
0
10
20
30
40
50
60
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
TA=25°C
Alpha & Omega Semiconductor, Ltd.