TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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July 15, 2005
1
-30
-20
-10
0
10
20
30
4 5 6 7 8 9 10 11 12 13 14
Frequency (GHz)
Spar & NF (dB)
0
1
2
3
4
5
6
Noise Fi
g
ure
(
dB
)
-30
-20
-10
0
10
20
30
4567891011121314
Frequency (G Hz)
Spar & NF (dB)
0
1
2
3
4
5
6
Noise Figure (dB)
Product Description
The TriQuint TGA2512-SM is a packaged X-
band balanced LNA with AGC amplifier for EW,
ECM, and RADAR receiver or driver amplifier
applications. The TGA2512-SM provides
excellent noise performance with typical
midband NF of 2.3dB, and high gain, 25dB from
4-14GHz
The TGA2512-SM is designed for maximum
ease of use. TGA2512-SM can handle up to
21dBm input power reliably, while the build-in
gain control provides 15dB of typical gain
control range. The part can be used in self-
biased mode, with a single +5V supply
connection, or in gate biased mode, allowing
the user to control the current for a particular
application.
In self-biased mode the TGA2512-SM achieves
6dBm typical P1dB, while in gate-biased mode
the typical P1dB is over 13dBm.
Lead-Free & RoHS compliant.
Evaluation boards are available.
Primary Applications
• X-Band Radar
•EW, ECM
• Point-to-Point Radio
4 - 14 GHz balanced LNA TGA2512-SM
Measu red Data
ORL
Gain
IRL
Key Features
• Typical Frequency Range: 4 - 14 GHz
• 2.3 dB Nominal Noise Figure
• 25 dB No minal Gain
• 15 dB AGC Range
• 13 dBm Nominal P1dB
• 24dBm Nominal OIP3
• Bias: 5 V, 160 mA Gate B ia s
5 V, 90 mA Self Bias
• Package Dimensions:
4.0 x 4.0 x 0.9 mm
Bias Conditions: Gate Bias, Vd = 5V, Id = 160mA
Bias Conditions: Self Bias, Vd = 5V, Id = 90mA
NF
Gain
NF
ORL
IRL
Self Bias Gate Bias
Note: Device is ea rly in t h e charac terization process prior to finalizing all electrical specifications. S pecifications are subject to change
wit ho ut notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
2
TGA2512-SM
TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
Vd Drain Voltage [3.5 + (0.0125)(Id)] V 2/ 3/
Vg Gate Voltage Range -1 TO +0.5 V
Id Drain Current (gate biased) 240 mA 2/
IgGate Current 7.04 mA
PIN Input Continuous Wave Power 21 dBm
PDPower Dissipation See note 4/ 2/
TCH Operating Channel Temperature 117 0C5/
TMMounting Temperature (30 Seconds) 260 0C
TSTG Storage Temperature -65 to 150 0C
TCASE Package Operating Temperature -40 to 110 0C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Unit for Id is A
4/ For a median life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (117 0C – TBASE 0C) / θJC (0C/W)
Wher e TBASE is the base plate temperature.
θJC for self bias is 28.2 0C/W
θJC for gate bias is 37.6 0C/W
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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July 15, 2005
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TABLE II
ELECTRICAL CHA RACTERIST ICS
(Ta = 25 0C, Nominal)
TGA2512-SM
PARAMETER Gate Bias Self Bias UNITS
Frequency Range 4 - 14 4 - 14 GHz
Drain Voltage, Vd 5.0 5.0 V
Drain Current, Id 160 90 mA
Gate Voltage, Vg -0.1 - V
Small Signal Gain, S21 25 22 dB
Input Return Loss, S11 10 10 dB
Output Return Loss, S22 20 20 dB
Noise Figure, NF 2.3 2.3 dB
Output Power @ 1dB Gain Compression, P1dB 13 6 dBm
OIP3 24 16 dBm
Tempe rature Gain Coefficent -0.02 -0.02 dB/0C
Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured
measurements.
TABLE III
THERMAL INFORMATION
PARAMETER TEST CONDITIONS TCH
(OC) TJC
(qC/W) TM
(HRS)
TJC Therma l Resistance
(channel to Case)
Vd = 5 V
Id = 160 mA Gate Bias
Pdiss = 0.80 W 100 37.6 5.8E+6
TJC Therma l Resistance
(channel to Case)
Vd = 5 V
Id = 90 mA Self Bias
Pdiss = 0.45 W 82.7 28.2 4.1E+7
Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case
Temperature @ 70 OC
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
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TGA2512-SM
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency ( G Hz)
Gain (dB)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency ( GHz)
Gain Over Vctrl (dB)
Vctrl=0.0V
Vctrl=2.5V
Vctrl=2.75V
Vctrl=3.0V
Vctrl=3.25V
Vctrl=3.5V
Vctrl=3.75V
Vctrl=4.0V
Vctrl=4.25V
Vctrl=4.5V
Vctrl=5.0V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
5
TGA2512-SM
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency ( G Hz)
I nput Ret urn Loss (dB)
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency ( G Hz)
Out put Return Loss (dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
6
TGA2512-SM
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
0
1
2
3
4
5
6
7
8
9
10
23456789101112131415161718
Frequency ( G Hz)
Noise Figure (dB)
0
1
2
3
4
5
6
7
8
9
10
2 3 4 5 6 7 8 9 101112131415161718
Freque ncy (GHz)
Noise Figure Over Vctrl (dB
)
Vctrl=0V
Vctrl=2.5V
Vctrl=2.75V
Vctrl=3.0V
Vctrl=3.5V
Vctrl=4.0V
Vctrl=5.0V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
7
TGA2512-SM
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz )
P1 d B (d Bm)
-15
-12
-9
-6
-3
0
3
6
9
12
15
2 3 4 5 6 7 8 9 101112131415161718
Frequency (GHz)
P1 d B O v e r Vctrl (dB m )
Vctrl=0V
Vctrl=2V
Vctrl=3V
Vctrl=3.5V
Vctrl=4V
Vctrl=5V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
8
TGA2512-SM
Measured Data
Bias Conditions: Self Bias, Vd = 5 V, Id = 90 mA
8
10
12
14
16
18
20
22
24
26
5 6 7 8 9 101112131415
Frequency (GHz )
OI P 3 (d B m)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
9
TGA2512-SM
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 m A
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency ( GHz)
Gain (dB)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Freque ncy ( GHz)
G a i n O v er Vct r l (dB)
Vctrl=0V
Vctrl=1V
Vctrl=2V
Vctrl=3V
Vctrl=4V
Vctrl=5V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
10
TGA2512-SM
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 m A
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Input Return Loss (dB)
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Out put Return Loss ( dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
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TGA2512-SM
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 m A
0
1
2
3
4
5
6
7
8
9
10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency ( GHz)
Noise Figure ( dB )
0
1
2
3
4
5
6
7
8
9
10
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Noi se Figure Over Vctrl (dB)
Vctrl=0V
Vctrl=2.5V
Vctrl=2.75V
Vctrl=3.0V
Vctrl=3.5V
Vctrl=4.0V
Vctrl=5.0V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
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TGA2512-SM
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 m A
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Frequency ( GHz)
P1dB ( dBm)
-15
-12
-9
-6
-3
0
3
6
9
12
15
2 3 4 5 6 7 8 9 101112131415161718
Frequency (GHz)
P1dB O ver Vctrl (dBm )
Vctrl=0V
Vctrl=2V
Vctrl=3V
Vctrl=3.5V
Vctrl=4V
Vctrl=5V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
July 15, 2005
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TGA2512-SM
Measured Data
Bias Conditions: Gate Bias, Vd = 5 V, Id = 160 m A
8
10
12
14
16
18
20
22
24
26
56789101112131415
Frequency (GHz )
OIP3 (dBm)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Package Pinout Diagram
TGA2512-SM
Bottom View
Top View
Dot indicates Pin 1
Pin Description
1,3, 4, 5, 6, 7, 9 NC
2 RF Input
8 RF Output
10 Vd
11 Vctrl
12 Vg
13 Gnd
11 12
13
10
9
8
7
654
3
2
1
Self Bias
Gate Bia s
Pin Description
1,3, 4, 5, 6, 7, 9, 12 NC
2 RF Input
8RF Output
10 Vd
11 Vctrl
13 Gnd
Self Bias: Vd = 5V (Id = ~90mA), Vctrl = 0 to +5V for Gain adjustment
Gate Bias: Vd = 5V , Vctrl = 0 to +5V for Gain adjustment
Vg = Range, -0.5 to 0, typically ~ -0.1 will provide ~160mA of Id.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA4512-SM
Units: Millimeters. Package tolerance: +/- 0.10
Bottom View
.33
.62
.65
4.00
1.35 .95
.95
3.05
4.00
2.1 x 2.1mm
Ground Pad
1
2
3
4
56
7
8
9
10 11 12
13
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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TGA2512-SM
Recommended Board Layout Assembl y
Self Bias
100pF
0402 Case Size
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Recommended Board Layout Assembly
Gate Bias
TGA2512-SM
100pF
0402 Case Size
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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TGA2512-SM
Ordering Information
Part Package Style
TGA2512-SM-1 QFN 4x4 Surface Mount – Sel f Bias
TGA2512-SM-2 QFN 4x4 Surface Mount – Gate Bias
