TEMPFET® BTS 121 A
1 19.02.04
3
2
1
Features
●N channel
●Logic level
●Enhancement mode
●Temperature sensor with thyristor characteristic
●The drain pin is electrically shorted to the tab
Pin 1 2 3
GDS
Type VDS IDRDS(on) Package Ordering Code
BTS 121A 100 V 22 A 0.1 ΩTO-220AB C67078-S5010-A2
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 100 V
Drain-gate voltage, RGS = 20 kΩVDGR 100
Gate-source voltage VGS ± 10
Continuous drain current, TC = 25 °CID22 A
ISO drain current
TC = 85 °C, VDS = 10 V, VDS = 0.5 V
ID-ISO 3.5
Pulsed drain current, TC = 25 °CID puls 88
Short circuit current, Tj = – 55 ... + 150 °CISC 68
Short circuit dissipation, Tj = – 55 ... + 150 °C
VDS ≤ 50 V / VDS ≤ 15 V
PSCmax 800 / 1000
W
Power dissipation Ptot 95
Operating and storage temperature range Tj,Tstg – 55 ... + 150 °C
DIN humidity category, DIN 40 040 – E –
IEC climatic category, DIN IEC 68-1 – 55/150/56
Thermal resistance
Chip-case
Chip-ambient
Rth JC
Rth JA
≤ 1.32
≤ 75
K/W
TEMPFET® BTS 121 A
2 19.02.04
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, ID = 0.25 mA
V(BR)DSS 100 ––
V
Gate threshold voltage
VGS = VDS, ID = 1 mA
VGS(th) 1.5 2.0 2.5
Zero gate voltage drain current
VGS = 0 V, VDS = 100
Tj = 25 °C
Tj = 125 °C
IDSS
–
–
0.1
10
1.0
100
µA
Gate-source leakage current
VGS = ±20 V, VDS = 0
Tj = 25 °C
Tj = 150 °C
IGSS
–
–
10
2
100
4
nA
µA
Drain-source on-state resistance
VGS = 4.5 V, ID = 9.5 A
RDS(on) –0.085 0.1
Ω
Dynamic Characteristics
Forward transconductance
VDS ≥ 2 ×ID×RDS(on)max,ID = 9.5 A
gfs 814–
S
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Ciss –1200 1500
pF
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Coss –320 580
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Crss –160 260
Turn-on time ton, (ton = td(on) + tr)
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω
td(on) –25 40 ns
tr–110 170
Turn-off time toff, (toff = td(off) + tf)
VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Ω
td(off) –210 270
tf–100 130
TEMPFET® BTS 121 A
3 19.02.04
Electrical Characteristics (cont’d)
at Tj = 25 °CC, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Continuous source current IS––19 A
Pulsed source current ISM ––76
Diode forward on-voltage
IF = 22 A, VGS = 0 V
VSD – 1.2 1.5
V
Reverse recovery time
IF = IS, diF/dt = 100 A/µs, VR = 30 V
t rr –150 –
ns
Reverse recovery charge
IF = IS, diF/dt = 100 A/µs, VR = 30 V
Q rr –0.58 –
µC
Temperature Sensor
Forward voltage
ITS(on) = 5 mA, Tj = – 55 ... + 150 °C
Sensor override, tp≤ 100 µs
Tj = – 55 ... + 160 °C
VTS(on) –
–
1.3
–
1.4
10
V
Forward current
Tj = – 55 ... + 150 °C
Sensor override, tp≤ 100 µs
Tj = – 55 ... + 160 °C
ITS(on) –
–
–
–
5.0
600
mA
Holding current, VTS(off) = 5 V, Tj = 25 °C
Tj = 150 °C
IH0.05
0.05
0.1
0.2
0.5
0.3
Switching temperature
VTS = 5 V
TTS(on) 150 ––
°C
Turn-off time
VTS = 5 V, ITS(on) = 2 mA
toff 0.5 –2.5
µs
TEMPFET® BTS 121 A
4 19.02.04
Examples for short-circuit protection
at Tj = – 55 ... + 150 °C, unless otherwise specified.
Parameter Symbol Examples Unit
12–
Drain-source voltage VDS 15 30 –V
Gate-source voltage VGS 5.5 4.0 –
Short-circuit current ISC 66.7 26.7 –A
Short-circuit dissipation PSC 1000 800 –W
Response time
Tj = 25 °C, before short circuit
tSC(off) ≤25 ≤25 –
ms
Short-circuit protection ISC = f (VDS)
Parameter:V
GS
DiagramtodetermineISC forTj=–55...+ 150 ˚C
Max. gate voltage VGS(SC) = f (VDS)
Parameter: Tj=– 55 ... + 150 °C
TEMPFET® BTS 121 A
5 19.02.04
Max. power dissipation Ptot = f (TC)
Typical output characteristics ID = f (VDS)
Parameter:t
p =80µs
Typ. drain-source on-state resistance
RDS(on) = f (ID)
Parameter:V
GS
Safe operating area ID = f (VDS)
Parameter: D = 0.01, TC=25°C
TEMPFET® BTS 121 A
6 19.02.04
Drain-source on-state resistance
RDS(on) = f (Tj)
Parameter: ID= 4.5 A, VGS = 9.5 V
Typ. transfer characteristic
ID = f (VGS)
Parameter:t
p = 80 µs, VDS = 25 V
Gate threshold voltage VGS(th) = f (Tj)
Parameter:V
DS = VGS,ID= 1 mA (spread)
Typ. transconductance gfs = f (ID)
Parameter: tp = 80 µs, VDS = 25 V
TEMPFET® BTS 121 A
7 19.02.04
Continuous drain current ID=f (TC)
Parameter: VGS ≥ 10 V
Typ. gate-source leakage current
IGSS =f (TC)
Parameter: VGS = 20 V, VDS = 0
Forward characteristics of reverse diode
IF = f (VSD)
Parameter:T
j,tp = 80 µs (spread)
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f= 1 MHz
TEMPFET® BTS 121 A
8 19.02.04
Transient thermal impedance ZthJC = f (tp)
Parameter:D = tp/T
TEMPFET® BTS 121 A
9 19.02.04
TO 220 AB Ordering Code
Standard C67078-S5010-A2
TO 220 AB Ordering Code
SMD Version E 3045 C67078-S5010-A5
3.7
9.5
9.9
4.6
0.75
1.05
2.542.54
17.5
2.8
12.8
0.5
2.4
13.5
9.2
15.6
1.3
4.4
GPT05155
1)
3) max. 14.5 by dip tinning press burr max. 0.05
2) dip tinning
1) punch direction, burr max. 0.04
3)
2) 1
TEMPFET® BTS 121 A
10 19.02.04
Edition 04.97
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
©
Infineon Technologies AG 2000.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address
list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
