MITSUBISHI Nch POWER MOSFET FK14VS-10 HIGH-SPEED SWITCHING USE FK14VS-10 OUTLINE DRAWING Dimensions in mm FO5MAX, \ z \ (oa OS i) tO oi? 39 Bo) 3 8/15 Li Ce fe ae 08 op i) Y 2. 3 at al J? GATE 2: DRAIN @VDSS ccc ccc etter eee eet e ence tenet eeeeeenes 500V 3 SOURCE 4 DRAIN eros (ON) (MAX) eee renee eto e awe seas 0.80 WD cece eee eet e tence vente n teen eneeentettagee 14A @ Integrated Fast Recovery Diode (MAX.) -+-: 150ns TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS (Te = 25C) Symbol Parameter Conditions Ratings Unit Vpss Drain-source voltage Vas = 0V 500 Vv Vass Gate-source voltage Vos = OV +30 V ID Drain current 14 A loM Drain current (Pulsed) 42 A Is Source current 14 A ism Source current (Pulsed) 42 A Po Maximum power dissipation 150 Ww Tech Channel temperature ~55 ~ +150 C Tstg Storage temperature ~55 ~ +150 C ~ Weight Typical value 1.2 g MITSUBISHI 3-177 ELECTRICMITSUBISHI Nch POWER MOSFET FK14VS-10 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (ten = 25C) .. Limits . Symbol Parameter Test conditions - Unit Min. Typ. Max. V (eR) OSs | Drain-source breakdown voltage | lb = IMA, VGS = OV 500 _ _ Vv V (BR) GSS _ | Gate-source breakdown voltage | IG =+100uA, Vbs = OV +30 Vv lass Gate leakage current Vas = +25V, VDs = OV _ ~ +10 HA ipss Drain current VDS = 500V, Vas = OV _ 1 mA VGS (th) Gate-source threshold voitage ID = ImA, VDS = 10V 2 3 4 Vv rOS (ON) | Drain-source on-state resistance | lo = 7A, VGS = 10V _ 0.63 0.80 Q Vps (ON) | Drain-source on-state voltage {| ID = 7A, Vas = 10V 4.44 5.60 Vv | yts | Forward transfer admittance | Ib = 7A, VDS = 10V 45 7.0 s Ciss Input capacitance 1500 ~~ pF Coss Output capacitance VDS = 25V, VGS = OV, f = IMHz _ 180 pF Crss Reverse transfer capacitance _ 30 = pF td fon) Turn-on delay time _ 30 _ ns ise ti 50 _ us Rise time _ Vop = 200V, Ip = 7A, VGS = 10V, RGEN = Res = 500 ns ta (off) Turn-off delay time _ 130 _ ns ft Fail time = 50 _ ns Vsp Source-drain voltage Is = 7A, VGS = OV _ 15 2.0 Vv Rth ich-c}_ | Thermal resistance Channel to case ~ _ 0.83 CW trr Reverse recovery time Is = 14A, dis/dt = -100A/us _ _ 150 ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 5 _ 3 tw=10us = 2 a 160 < 1 ao o 1 100us z 5 3 120 5 3 Ee iw < vd 2 a G 5 10 Q 80 oO 7 a z 5 x < 3 = 40 3b tc = 25C 9 Single o 10 2 5 %5 50 100 150 200 109 23 5710123 57102 23 57108 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE Vos (V) 3-178 MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FK14VS-10 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 50 r a 20 VGS=20V 10V co. 258 > ~ Tc = 25C Pulse Test Pulse Test =< 40 x 16 o VoS = 20V a = 10V = 5B 30 5 12 Ww Ww x cc c fig B 2 a 8 Zz Z < < & 10 oy a 4 =YCSEZ V 0 0 9 10 20 30 40 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vops (V) DRAIN-SOQURCE VOLTAGE Vos (V) ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) 2.0 C= 25C Tc = 25C Ww Pulse Test wn Pulse Test ze Re De OS Zo Zan Og Og 12 wi wea OF Ow zy o BO ae 08 aS Ore Z+ zZ2 =< <u a ce 04 a a 0 . 0 0 4 8 42 16 20 10793 5710023 5710' 23 57102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 102 To = 28C 5 Vos = 50V C= => Puise Test 5 Toe 26 < ii @ 2 Ln 3 SB 2 : z ti cw ira FO 10! x ee 7 3 SE 5 z a a O23 2 Vos = 10V 1 Pulse Test % 4 8 12 16 20 100 2 30d 710) 2 3B 8 7 102 GATE-SOURCE VOLTAGE Vas (V)} DRAIN CURRENT Ip (A) MITSUBISHI 3-179 ELECTRICCAPACITANCE Ciss, Coss, Crss (pF) DRAIN-SOURCE ON-STATE RESISTANCE ros (on) (tC) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (25C) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2 102 7 ul = 3 ke 102 5 Bp 5 a 3h Toh = 25C 2b = 1MHz ciss VGs = OV 1 (Oly b710023 571023 STI 23 DRAIN-SOURCE VOLTAGE Vos (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 20 Toh = 25C ID = 714A ~ 16 < g 5 12 Ww iad c 3 8 tu O ec 3 4 wn 0 0 20 40 60 80100 GATE CHARGE (Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 10! 7 VGS = 10V Io = 1/2iD a 5 Pulse Test 5 =~ 3 as we 2 = a Fg 1099 Ww Ou 7 x Oo < 5 OF 23 3 ws < S Qo 7 og 50 100 150 =-200 250 CHANNEL TEMPERATURE Tch (C) MITSUBISHI Nch POWER MOSFET FK14VS-10 HIGH-SPEED SWITCHING USE SWITCHING CHARACTERISTICS (TYPICAL) _ Qo ay Toh = 25C Vod = 200V VGS = 10V EN = RGS = 500 Nw on 10! 10 2345710! 23 5 7 102 DRAIN CURRENT Ip (A) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 VGs = OV : Pulse Test 44 39 it = 125C 444 Halt 75 24 Th 35 16 8 0 0 08 1.6 2.4 3.2 49 SOURCE-DRAIN VOLTAGE Vso (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VbS = 10V lb=1mA 40 3.0 2.0 0 50 1a0 150 CHANNEL TEMPERATURE Tch (C) 3 - 180 MITSUBISHI ELECTRICDRAIN-SOURCE BREAKDOWN VOLTAGE _ V (aR) Dss (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) tre (48) REVERSE RECOVERY TIME BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGs = OV ID = IMA 04 60 0 50 106 150 CHANNEL TEMPERATURE Tch (C) DIODE REVERSE VS. SOURCE CURRENT dis/c: CHARACTERISTIC (TYPICAL) Ire (A) Is = 14A 3 Vas = OV 3 Vod = 250V I> ~ 101 5 = NR on @ Nw oO REVERSE RECOVERY CURRENT TRANSIENT THERMAL IMPEDANCE 2th (ch-c) (C/W) 10) Te = 26C 11% 7 ame Tor = 150C]? 5 5 10.23 5710 2 3 5710 SOURCE CURRENT dis/dt (A/us) MITSUBISHI Nch POWER MOSFET FK14VS-10 HIGH-SPEED SWITCHING USE DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 702 10 = R 7 disidt = ~100A/us 7 S = 5 | Y6s = Ov = & VOD = 250V 5 w 3 3 =e 2 2 > 3 > W402 10) & Uh Q 7 7 2 tu 5 5 z f 2 3 3 Ww we? Ten = 25C 12 y mm Teh = 150C > 1a! yoo WW yoo 62030668 710) 62-30 5 7 102 c SOURCE CURRENT fs (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Mud ane ieneey ane oan Pom 2 WW rd 0.05 T 0.02 5 0.01 ; 1 Pulse 10-423 87190823 5710223 571023 5710 23 5710 23 570 ~ iv mow UIs a Na PULSE WIDTH tw (s) MITSUBISHI ELECTRIC 3 - 131