AOD409G
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -28A
R
DS(ON)
(at V
GS
=-10V) < 40mΩ
R
DS(ON)
(at V
GS
=-4.5V) < 55mΩ
Applications
100% UIS Tested
100% Rg Tested
• Industrial and Motor Drive applications
AOD409G TO-252 Tape & Reel 2500
60V P-Channel MOSFET
Orderable Part Number Package Type Form Minimum Order Quantity
-60V
• Trench Power MOSFET technology
• Low R
DS(ON)
• Logic Level Driving
• RoHS and Halogen-Free Compliant
TO252
DPAK
Top View Bottom View
G
S
D
G
S
D
G
D
Symbol
V
DS
V
GS
I
DM
I
AS
Avalanche energy L=0.1mH
C
E
AS
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Power Dissipation
B
24
T
C
=100°C P
D
-60
60
Gate-Source Voltage
Pulsed Drain Current
C
-18
Parameter
Drain-Source Voltage
Continuous Drain
Current
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
1.7
50
2.1
V
A
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
V
Maximum Units
W
I
D
A-26
A
-80
I
DSM
-7
mJ34
-9
-28
Maximum Junction-to-Ambient
A
°C/W
R
θJA
15
40
20
Thermal Characteristics
Parameter Max
T
A
=70°C 4.0
°C
Units
Junction and Storage Temperature Range -55 to 150
Typ
P
DSM
W
T
A
=25°C 6.2
Power Dissipation
A
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
Avalanche Current
C
Continuous Drain
Current
Rev.1.0: September 2017
www.aosmd.com Page 1 of 6
AOD409G
Symbol Min Typ Max Units
BV
DSS
-60 V
V
DS
=-60V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -1.5 -2.0 -2.5 V
33 40
T
J
=125°C 56 68
44 55 mΩ
g
FS
33 S
V
SD
-0.7 -1 V
I
S
-28 A
C
iss
2350 pF
C
oss
160 pF
C
rss
115 pF
R
g
2.0 4.0 Ω
Q
g
(10V)
45 65 nC
Q
g
(4.5V)
22 33 nC
Q
gs
7 nC
Q
gd
10 nC
Q
oss
Output Charge V
GS
=0V, V
DS
=-30V 8nC
t
D(on)
10 ns
t
r
6 ns
t
D(off)
47
ns
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=-30V, f=1MHz
V
DS
=V
GS,
I
D
=-250µA
Output Capacitance
Forward Transconductance
I
S
=-1A, V
GS
=0V
V
DS
=-5V, I
D
=-20A
V
GS
=-10V, I
D
=-20A
V
DS
=0V, V
GS
=±20V
Maximum Body-Diode Continuous Current
Input Capacitance
Gate-Body leakage current
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-30V, R
L
=1.5Ω,
R
GEN
=3
Ω
Diode Forward Voltage
DYNAMIC PARAMETERS
V
GS
=-4.5V, I
D
=-20A
Turn-On Rise Time
Gate Source Charge
Gate Drain Charge
Total Gate Charge
SWITCHING PARAMETERS
Turn-On DelayTime
mΩ
V
GS
=-10V, V
DS
=-30V, I
D
=-20A
Total Gate Charge
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Gate resistance f=1MHz
I
DSS
µAZero Gate Voltage Drain Current
Drain-Source Breakdown Voltage I
D
=-250µA, V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
t
D(off)
47
ns
t
f
12 ns
t
rr
23 ns
Q
rr
107 nC
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=-20A, di/dt=500A/µs
Turn-Off DelayTime
Turn-Off Fall Time
R
GEN
=3
Ω
I
F
=-20A, di/dt=500A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev.1.0: September 2017 www.aosmd.com Page 2 of 6
AOD409G
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
10
20
30
12345
-ID (A)
-VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
10
20
30
40
50
60
0 5 10 15 20 25
RDS(ON) (mΩ)
-I
D
(A)
Figure 3: On
-
Resistance vs. Drain Current and Gate
0.8
1
1.2
1.4
1.6
1.8
2
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On
-
Resistance vs. Junction Temperature
VGS=-4.5V
ID=-20A
VGS=-10V
ID=-20A
25°C
125°C
VDS=-5V
VGS=-4.5V
VGS=-10V
0
10
20
30
012345
-ID(A)
-VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=-3V
-3.5V
-4.5V
-10V
-4V
D
Figure 3: On
-
Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
25°C
125°C
Figure 4: On
-
Resistance vs. Junction Temperature
(Note E)
20
30
40
50
60
70
80
90
2 4 6 8 10
RDS(ON) (mΩ)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
ID=-20A
25°C
125°C
Rev.1.0: September 2017 www.aosmd.com Page 3 of 6
AOD409G
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
100
200
300
400
500
0.0001 0.001 0.01 0.1 1 10 100
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
0
2
4
6
8
10
0 10 20 30 40 50
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
500
1000
1500
2000
2500
3000
3500
0 10 20 30 40 50 60
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-30V
ID=-20A
TJ(Max)=150°C
TC=25°C
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
10µs
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
100
µ
s
10ms
Figure 10: Single Pulse Power Rating Junction
-
to
-
Case (Note F)
0.01
0.1
1
10
1E-05 0.0001 0.001 0.01 0.1 1 10 100
ZθJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
RθJC=2.1°C/W
Rev.1.0: September 2017 www.aosmd.com Page 4 of 6
AOD409G
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
0 25 50 75 100 125 150
Power Dissipation (W)
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
10
20
30
40
0 25 50 75 100 125 150
Current rating -ID (A)
TCASE (°C)
Figure 13: Current De-rating (Note F)
1
10
100
1000
10000
1E-05 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
TA=25°C
0
0.5
1
0 20 40 60
Eoss(uJ)
-
V
(Volts)
0.001
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100 1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
DM
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note H)
RθJA=50°C/W
-
V
DS
(Volts)
Figure 14: Coss stored Energy
Rev.1.0: September 2017 www.aosmd.com Page 5 of 6
AOD409G
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E = 1/2 LI
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Vds
L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
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