W982516AH
4M
×
4 BANKS
×
16 BIT SDRAM
Publication Release Date: February 2001
- 1 - Revision A2
GENERAL DESCRIPTION
W982516AH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
4M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology,
W982516AH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the
personal computer industrial standard, W982516AH is sorted into three speed grades: -7, -75, and -
8H. The -7 is compliant to the 143 MHz/CL3 or PC133/CL2 specification, the -75 is compliant to the
PC133/CL3 specification, the -8H is compliant to the PC100/CL2 specification. For handheld device
application, we also provide a low power option, the grade of 75L, with Self Refresh Current under
1mA.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W982516AH is ideal for main memory in
high performance applications.
FEATURES
• 3.3V ±0.3V Power Supply
• Up to 143 MHz Clock Frequency
• 4,194,304 Words × 4 Banks × 16 Bits Organization
• Self Refresh Mode: Standard and Low Power
• CAS Latency: 2 and 3
• Burst Length: 1, 2, 4, 8, and Full Page
• Burst Read, Single Writes Mode
• Byte Data Controlled by LDQM, UDQM
• Power-down Mode
• Auto-precharge and Controlled Precharge
• 8K Refresh Cycles/64 mS
• Interface: LVTTL
• Packaged in TSOP II 54-pin, 400 mil - 0.80
AVAILABLE PART NUMBER
PART NUMBER SPEED GRADE SELF REFRESH CURRENT
(MAX.)
W982516AH-7 PC133/CL2 3 mA
W982516AH-75 PC133/CL3 3 mA
W982516AH-8H PC100/CL2 3 mA
W982516AH75L PC133/CL3 1 mA
W982516AH
- 2 -
PIN CONFIGURATION
VSS
DQ15
VSSQ
DQ14
DQ13
VCCQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VCCQ
DQ8
VSS
NC
UDQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
VCC
DQ0
VCCQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VCCQ
DQ5
DQ6
VSSQ
DQ7
VCC
LDQM
BS0
BS1
A10/AP
A0
A1
A2
A3
VCC
CS
RAS
CAS
WE
W982516AH
Publication Release Date: February 2001
- 3 - Revision A2
PIN DESCRIPTION
PIN NO. PIN NAME
FUNCTION DESCRIPTION
23−26, 22,
29−36 A0−A12 Address Multiplexed pins for row and column address.
Row address: A0−A12. Column address: A0−A8.
20, 21 BS0, BS1
Bank Select
Select bank to activate during row address latch time, or
bank to read/write during address latch time.
2, 4, 5, 7, 8, 10,
11, 13, 42, 44,
45, 47, 48, 50,
51, 53 DQ0−DQ16
Data
Input/Output
Multiplexed pins for data output and input.
19 CS Chip Select Disable or enable the command decoder. When
command decoder is disabled, new command is
ignored and previous operation continues.
18 RAS Row Address
Strobe
Command input. When sampled at the rising edge of
the clock, RAS , CAS and
WE
define the operation
to be executed.
17 CAS Column
Address
Strobe Referred to RAS
16
WE
Write Enable
Referred to RAS
15, 39 LDQM,
UDQM Input/Output
Mask
The output buffer is placed at Hi-Z(with latency of 2)
when DQM is sampled high in read cycle. In write
cycle, sampling DQM high will block the write operation
with zero latency.
38 CLK Clock Inputs
System clock used to sample inputs on the rising edge
of clock.
37 CKE Clock Enable
CKE controls the clock activation and deactivation.
When CKE is low, Power Down mode, Suspend mode,
or Self Refresh mode is entered.
1, 14, 27 VCC Power (+3.3V)
Power for input buffers and logic circuit inside DRAM.
28, 41, 54 VSS Ground Ground for input buffers and logic circuit inside DRAM.
3, 9, 43, 49 VCCQ Power (+3.3V)
for I/O Buffer
Separated power from VCC, to improve DQ noise
immunity.
6, 12, 46, 52 VSSQ Ground
for I/O Buffer
Separated ground from VSS, to improve DQ noise
immunity.
40 NC No Connection
No connection
W982516AH
- 4 -
BLOCK DIAGRAM
DQ0
DQ15
LDQM
UDQM
CLK
CKE
CS
RAS
CAS
WE
A10
A0
A9
A11
A12
BS0
BS1
CLOCK
BUFFER
COMMAND
DECODER
ADDRESS
BUFFER
REFRESH
COUNTER COLUMN
COUNTER
CONTROL
SIGNAL
GENERATOR
MODE
REGISTER
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #2
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #0
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #3
DATA CONTROL
CIRCUIT DQ
BUFFER
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #1
Note: The cell array configuration is 8192 * 512 * 16.
ROW DECODER ROW DECODER
ROW DECODERROW DECODER
W982516AH
Publication Release Date: February 2001
- 5 - Revision A2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATING UNIT NOTES
Input, Output Voltage VIN, VOUT -0.3 − VCC +0.3
V 1
Power Supply Voltage VCC, VCCQ -0.3−4.6 V 1
Operating Temperature TOPR 0−70 °C 1
Storage Temperature TSTG -55−150 °C 1
Soldering Temperature (10s) TSOLDER 260 °C 1
Power Dissipation PD 1 W 1
Short Circuit Output Current IOUT 50 mA 1
Note 1: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
RECOMMENDED DC OPERATING CONDITIONS
(Ta = 0 to 70°C)
PARAMETER SYMBOL
MIN. TYP. MAX. UNIT NOTES
Power Supply Voltage VCC 3.0 3.3 3.6 V 2
Power Supply Voltage (for I/O
Buffer) VCCQ 3.0 3.3 3.6 V 2
Input High Voltage VIH 2.0 - VCC +0.3
V 2
Input Low Voltage VIL -0.3 - 0.8 V 2
Note 2: VIH(max) = VCC/ VCCQ+1.2V for pulse width < 5 nS
VIL(min) = VSS/ VSSQ-1.2V for pulse width < 5 nS
CAPACITANCE
(VCC = 3.3V, f = 1 MHz, TA = 25°C)
PARAMETER SYMBOL
MIN. MAX.
UNIT
Input Capacitance
(A0 to A12, BS0, BS1, CS, RAS , CAS,
WE
, LDQM,
UDQM, CKE)
CI - 3.8 pf
Input Capacitance (CLK) CCLK - 3.5 pf
Input/Output Capacitance CIO - 6.5 pf
Note: These parameters are periodically sampled and not 100% tested.
W982516AH
- 6 -
AC CHARACTERISTICS AND OPERATING CONDITION
(Vcc = 3.3V ± 0.3V, TA = 0° to 70°C; Notes: 5, 6, 7, 8)
PARAMETER SYM.
-7
(PC133, CL2)
-75/75L
(PC133, CL3)
-8H
(PC100) UNIT
MIN.
MAX. MIN.
MAX. MIN.
MAX.
Ref/Active to Ref/Active Command
Period tRC 56
65
68
Active to precharge Command Period tRAS 40
100000
45
100000
48
100000
nS
Active to Read/Write Command Delay
Time tRCD 15
20
20
Read/Write(a) to Read/Write(b)
Command Period tCCD 1 1 1 Cycle
Precharge to Active Command Period tRP 15
20
20
Active(a) to Active(b) Command Period
tRRD 15
15
20
Write Recovery Time CL* = 2 tWR 7.5
10
10
CL* = 3 7 7.5
8
CLK Cycle Time CL* = 2 tCK 7.5
1000 10
1000 10
1000
CL* = 3 7 1000 7.5
1000 8 1000
CLK High Level Width tCH 2.5
2.5
3
CLK Low Level Width tCL 2.5
2.5
3
Access Time from CLK CL* = 2 tAC 5.4 6 6
CL* = 3 5.4 5.4 6 nS
Output Data Hold Time tOH 3 3 3
Output Data High Impedance Time tHZ 3 7 3 7.5 3 8
Output Data Low Impedance Time tLZ 0 0 0
Power Down Mode Entry Time tSB 0 7 0 7.5 0 8
Transition Time of CLK
(Rise and Fall) tT 0.5
10 0.5
10 0.5
10
Data-in Set-up Time tDS 1.5
1.5
2
Data-in Hold Time tDH 0.8
0.8
1
Address Set-up Time tAS 1.5
1.5
2
Address Hold Time tAH 0.8
0.8
1
CKE Set-up Time tCKS 1.5
1.5
2
CKE Hold Time tCKH 0.8
0.8
1
Command Set-up Time tCMS
1.5
1.5
2
Command Hold Time tCMS
0.8
0.8
1
Refresh Time tREF 64 64 64 mS
Mode register Set Cycle Time tRSC 14
15
16
nS
*CL = CAS Latency
W982516AH
Publication Release Date: February 2001
- 7 - Revision A2
DC CHARACTERISTICS
(VCC = 3.3V ± 0.3V, TA = 0°− 70°C)
PARAMETER
SYM.
-7
(PC133, CL2)
-75/75L
(PC133, CL3)
-8H
(PC100) UNIT
NOTES
MIN.
MAX.
MIN.
MAX.
MIN. MAX.
Operating Current
tCK = min., tRC = min.
Active precharge command
cycling without burst
operation
1 Bank
Operation ICC1 80 75 70 3
Standby Current
tCK = min, CS = VIH
CKE = VIH ICC2 40 35 30 3
VIH/L = VIH (min.)/VIL (max.)
Bank: Inactive state CKE = VIL
(Power down
mode)
ICC2P
1 1 1 3
Standby Current
CLK = VIL, CS = VIH
CKE = VIH ICC2S
10 10 10
VIH/L = VIH (min.)/VIL (max.)
BANK: Inactive state CKE = VIL
(Power down
mode)
ICC2PS 1 1 1 mA
No Operating Current
tCK = min., CS = VIH (min.)
CKE = VIH ICC3 60 55 50
BANK: Active state
(4 banks) CKE = VIL
(Power down
mode)
ICC3P
10 10 10
Burst Operating Current
tCK = min.
Read/ Write command cycling
ICC4 100
95 90 3, 4
Auto Refresh Current
tCK = min.
Auto refresh command cycling
ICC5 170
160
150
3
Standard ICC6 3 3 3
Self Refresh Current
Self Refresh Mode
CKE = 0.2V Low Power
ICC6L
- 1 -
PARAMETER SYMBOL
MIN. MAX. UNIT NOTES
Input Leakage Current
(0V ≤ VIN ≤ VCC, all other pins not under test = 0V)
II(L) -5 5 µA
Output Leakage Current
(Output disable, 0V ≤ VOUT ≤ VCCQ)
IO(L) -5 5 µA
LVTTL Output ″H″ Level Voltage
(IOUT = -2 mA )
VOH 2.4 - V
LVTTL Output ″L″ Level Voltage
(IOUT = 2 mA )
VOL - 0.4 V
W982516AH
- 8 -
Notes:
1. Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the
devices.
2. All voltages are referenced to VSS
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the
minimum values of tCK and tRC.
4. These parameters depend on the output loading conditions. Specified values are obtained with
output open.
5. Power up sequence is further described in the "Functional Description" section.
6. AC Testing Conditions
Output Reference Level 1.4V/1.4V
Output Load See diagram below
Input Signal Levels 2.4V/0.4V
Transition Time (Rise and Fall) of Input Signal 2 nS
Input Reference Level 1.4V
50 ohms
1.4 V
AC TEST LOAD
Z = 50 ohmsoutput 50pF
7. Transition times are measured between VIH and VIL.
8. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to
output level.
W982516AH
Publication Release Date: February 2001
- 9 - Revision A2
OPERATION MODE
Fully synchronous operations are performed to latch the commands at the positive edges of CLK.
Table 1 shows the truth table for the operation commands.
Table 1 Truth Table (Note (1) , (2))
COMMAND DEVICE
STATE
CKEN-1
CKEN
DQM
BS0, 1
A10
A0
−
A9
A11, A12
CS
RAS
CAS
WE
Bank Active Idle H x x v v v L L H H
Bank Precharge Any H x x v L x L L H L
Precharge All Any H x x x H x L L H L
Write Active (3) H x x v L v L H L L
Write with Autoprecharge Active (3) H x x v H v L H L L
Read Active (3) H x x v L v L H L H
Read with Autoprecharge Active (3) H x x v H v L H L H
Mode Register Set Idle H x x v v v L L L L
No-operation Any H x x x x x L H H H
Burst Stop Active (4) H x x x x x L H H L
Device Deselect Any H x x x x x H x x x
Auto-refresh Idle H H x x x x L L L H
Self-refresh Entry Idle H L x x x x L L L H
Self-refresh Exit Idle
(S.R.) L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Clock Suspend Mode
Entry Active H L x x x x x x x x
Power Down Mode Entry Idle
Active (5) H
H
L
L
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Clock Suspend Mode Exit Active L H x x x x x x x x
Power Down Mode Exit
Any
(Power
down)
L
L
H
H
x
x
x
x
x
x
x
x
H
L
x
H
x
H
x
x
Data Write/Output Enable Active H x L x x x x x x x
Data Write/Output Disable
Active H x H x x x x x x x
Notes:
(1) v = valid x = Don't care L = Low Level H = High Level
(2) CKEn signal is input level when commands are provided.
CKEn-1 signal is the input level one clock cycle before the command is issued.
(3) These are state of bank designated by BS0, BS1 signals.
(4) Device state is full page burst operation.
(5) Power Down Mode can not be entered in the burst cycle.
When this command asserts in the burst cycle, device state is clock suspend mode.
W982516AH
- 10 -
FUNCTIONAL DESCRIPTION
Power Up and Initialization
The default power up state of the mode register is unspecified. The following power up and
initialization sequence need to be followed to guarantee the device being preconditioned to each user
specific needs.
During power up, all Vcc and VccQ pins must be ramp up simultaneously to the specified voltage
when the input signals are held in the "NOP" state. The power up voltage must not exceed Vcc +0.3V
on any of the input pins or Vcc supplies. After power up, an initial pause of 200 µS is required followed
by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus
during power up, it is required that the DQM and CKE pins be held high during the initial pause period.
Once all banks have been precharged, the Mode Register Set Command must be issued to initialize
the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after
programming the Mode Register to ensure proper subsequent operation.
Programming Mode Register
After initial power up, the Mode Register Set Command must be issued for proper device operation.
All banks must be in a precharged state and CKE must be high at least one cycle before the Mode
Register Set Command can be issued. The Mode Register Set Command is activated by the low
signals of RAS, CAS, CS and WE at the positive edge of the clock. The address input data during this
cycle defines the parameters to be set as shown in the Mode Register Operation table. A new
command may be issued following the mode register set command once a delay equal to tRSC has
elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table.
Bank Activate Command
The Bank Activate command must be applied before any Read or Write operation can be executed.
The operation is similar to
RAS
activate in EDO DRAM. The delay from when the Bank Activate
command is applied to when the first read or write operation can begin must not be less than the RAS
to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank
Activate command can be issued to the same bank. The minimum time interval between successive
Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC).
The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice
versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is
specified as tRAS (max).
Read and Write Access Modes
After a bank has been activated , a read or write cycle can be followed. This is accomplished by
setting RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin voltage
level defines whether the access cycle is a read operation (WE high), or a write operation (WE low).
The address inputs determine the starting column address.
Reading or writing to a different row within an activated bank requires the bank be precharged and a
new Bank Activate command be issued. When more than one bank is activated, interleaved bank
Read or Write operations are possible. By using the programmed burst length and alternating the
access and precharge operations between multiple banks, seamless data access operation among
many different pages can be realized. Read or Write Commands can also be issued to the same bank
or between active banks on every clock cycle.
W982516AH
Publication Release Date: February 2001
- 11 - Revision A2
Burst Read Command
The Burst Read command is initiated by applying logic low level to CS and CAS while holding RAS
and WE high at the rising edge of the clock. The address inputs determine the starting column
address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst
length (1, 2, 4, 8, full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next page
explain the address sequence of interleave mode and sequential mode.
Burst Write Command
The Burst Write command is initiated by applying logic low level to CS, CAS and WE while holding
RAS high at the rising edge of the clock. The address inputs determine the starting column address.
Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle that the
Write Command is issued. The remaining data inputs must be supplied on each subsequent rising
clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes will be
ignored.
Read Interrupted by a Read
A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted,
the remaining addresses are overridden by the new read address with the full burst length. The data
from the first Read Command continues to appear on the outputs until the CAS latency from the
interrupting Read Command the is satisfied.
Read Interrupted by a Write
To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output
drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will
issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the
DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM
masking is no longer needed.
Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the
previous burst is interrupted, the remaining addresses are overridden by the new address and data
will be written into the device until the programmed burst length is satisfied.
Write Interrupted by a Read
A Read Command will interrupt a burst write operation on the same clock cycle that the Read
Command is activated. The DQs must be in the high impedance state at least one cycle before the
new read data appears on the outputs to avoid data contention. When the Read Command is
activated, any residual data from the burst write cycle will be ignored.
Burst Stop Command
A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open
for future Read or Write Commands to the same page of the active bank, if the burst length is full page.
Use of the Burst Stop Command during other burst length operations is illegal. The Burst Stop
Command is defined by having RAS and CAS high with CS and WE low at the rising edge of the clock.
The data DQs go to a high impedance state after a delay which is equal to the CAS Latency in a burst
W982516AH
- 12 -
read cycle interrupted by Burst Stop. If a Burst Stop Command is issued during a full page burst write
operation, then any residual data from the burst write cycle will be ignored.
Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to
the device. The disturb address is varied by the Burst Length as shown in Table 2.
Table 2 Address Sequence of Sequential Mode
DATA ACCESS ADDRESS
BURST LENGTH
Data 0 n BL = 2 (disturb address is A0)
Data 1 n + 1 No address carry from A0 to A1
Data 2 n + 2 BL = 4 (disturb addresses are A0 and A1)
Data 3 n + 3 No address carry from A1 to A2
Data 4 n + 4
Data 5 n + 5 BL = 8 (disturb addresses are A0, A1 and A2)
Data 6 n + 6 No address carry from A2 to A3
Data 7 n + 7
Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit
in the sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA ACCESS ADDRESS BUST LENGTH
Data 0 A8 A7 A6 A5 A4 A3 A2 A1 A0 BL = 2
Data 1 A8 A7 A6 A5 A4 A3 A2 A1
A0
Data 2 A8 A7 A6 A5 A4 A3 A2
A1
A0 BL = 4
Data 3 A8 A7 A6 A5 A4 A3 A2
A1
A0
Data 4 A8 A7 A6 A5 A4 A3
A2
A1 A0 BL = 8
Data 5 A8 A7 A6 A5 A4 A3
A2
A1
A0
Data 6 A8 A7 A6 A5 A4 A3
A2
A1
A0
Data 7 A8 A7 A6 A5 A4 A3
A2
A1
A0
W982516AH
Publication Release Date: February 2001
- 13 - Revision A2
Auto-precharge Command
If A10 is set to high when the Read or Write Command is issued, then the auto-precharge function is
entered. During auto-precharge, a Read Command will execute as normal with the exception that the
active bank will begin to precharge automatically before all burst read cycles have been completed.
Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled
burst cycle. The number of clocks is determined by CAS latency.
A Read or Write Command with auto-precharge can not be interrupted before the entire burst
operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during
a read or write cycle with auto-precharge. Once the precharge operation has started, the bank cannot
be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-pecharge command is
illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write
with Auto-pecharge function is initiated. The SDRAM automatically enters the precharge operation one
clock delay from the last burst write cycle. This delay is referred to as Write tWR. The bank undergoing
auto-precharge can not be reactivated until tWR and tRP are satisfied. This is referred to as tDAL, Data-in
to Active delay (tDAL = tWR + tRP). When using the Auto-precharge Command, the interval between the
Bank Activate Command and the beginning of the internal precharge operation must satisfy tRAS (min).
Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The
Precharge Command is entered when CS, RAS and WE are low and CAS is high at the rising edge of
the clock. The Precharge Command can be used to precharge each bank separately or all banks
simultaneously. Three address bits, A10, BS0, and BS1, are used to define which bank(s) is to be
precharged when the command is issued. After the Precharge Command is issued, the precharged
bank must be reactivated before a new read or write access can be executed. The delay between the
Precharge Command and the Activate Command must be greater than or equal to the Precharge time
(tRP).
Self Refresh Command
The Self Refresh Command is defined by having CS, RAS, CAS and CKE held low with WE high at
the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command. Once
the command is registered, CKE must be held low to keep the device in Self Refresh mode. When the
SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are disabled.
The clock is internally disabled during Self Refresh Operation to save power. The device will exit Self
Refresh operation after CKE is returned high. A minimum delay time is required when the device exits
Self Refresh Operation and before the next command can be issued. This delay is equal to the tAC
cycle time plus the Self Refresh exit time.
If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly
distributed), a burst of 4,096 AUTO REFRESH cycles should be completed just prior to entering and
just after exiting the self refresh mode.
Power Down Mode
The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are
gated off to reduce the power. The Power Down mode does not perform any refresh operations,
therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the
device.
W982516AH
- 14 -
The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation
Command is required on the next rising clock edge, depending on tCK. The input buffers need to be
enabled with CKE held high for a period equal to tCKS (min) + tCK (min).
No Operation Command
The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to
prevent the SDRAM from registering any unwanted commands between operations. A No Operation
Command is registered when CS is low with RAS, CAS, and WE held high at the rising edge of the
clock. A No Operation Command will not terminate a previous operation that is still executing, such as
a burst read or write cycle.
Deselect Command
The Deselect Command performs the same function as a No Operation Command. Deselect
Command occurs when CS is brought high, the RAS, CAS, and WE signals become don't cares.
Clock Suspend Mode
During normal access mode, CKE must be held high enabling the clock. When CKE is registered low
while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode
deactivates the internal clock and suspends any clocked operation that was currently being executed.
There is a one clock delay between the registration of CKE low and the time at which the SDRAM
operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are
issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay
from when CKE returns high to when Clock Suspend mode is exited.
W982516AH
Publication Release Date: February 2001
- 15 - Revision A2
TIMING WAVEFORMS
Command Input Timing
CLK
A0-A12
BS0, 1
VIH
VIL
tCMH tCMS
tCHtCL
tTtT
tCKS tCKH
tCKH
tCKS
tCKS tCKH
Command Input Timing
CS
RAS
CAS
WE
CKE
tCMS tCMH
tCMS tCMH
tCMS tCMH
tCMS tCMH
tAS tAH
tCK
W982516AH
- 16 -
Timing Waveforms, continued
Read Timing
Read CAS Latency
tAC
tLZ
tAC
tOH
tHZ
tOH
Burst Length
Read Command
CLK
CS
RAS
CAS
WE
A0 - A12
BS0, 1
DQ Valid
Data-Out Valid
Data-Out
W982516AH
Publication Release Date: February 2001
- 17 - Revision A2
Timing Waveforms, continued
Control Timing of Input/Output Data
tCMH tCMS tCMH tCMS
tDS tDH tDS tDH tDS tDH tDS tDH
Valid
Data-Out Valid
Data-Out Valid
Data-Out
Valid
Data-in Valid
Data-in Valid
Data-in Valid
Data-in
tCKH tCKS tCKH tCKS
tDS tDH tDS tDH tDHtDS tDS tDH
Valid
Data-in
Valid
Data-in
Valid
Data-in
Valid
Data-in
tCMH tCMS tCMH tCMS
tOHtAC tOH tAC tOHtHZ
OPEN
tLZtAC tOH tAC
tCKH tCKS tCKH tCKS
tOHtAC tOH tAC tOHtAC tOH tAC
Valid
Data-Out Valid
Data-Out
Valid
Data-Out
CLK
DQM
DQ0 -15
(Word Mask)
(Clock Mask)
CLK
CKE
DQ0 -15
CLK
Input Data
Output Data
(Output Enable)
(Clock Mask)
DQM
DQ0 -15
CKE
CLK
DQ0 -15
W982516AH
- 18 -
Timing Waveforms, continued
Mode Register Set Cycle
A0
A1
A2
A3
A4
A5
A6
Burst Length
Addressing Mode
CAS Latency
(Test Mode)
A8 Reserved
A0A7
A0A9 A0Write Mode
A10
A12
A0A11
A0BS0
"0"
"0"
A0
A3 A0
Addressing Mode
A00A0Sequential
A01A0Interleave
A0A9 Single Write Mode
A00A0Burst read and Burst write
A01A0Burst read and single write
A0
A0A2 A1 A0
A00 0 0
A00 0 1
A00 1 0
A00 1 1
A01 0 0
A0
1 0 1
A01 1 0
A01 1 1
A0Burst Length
A0Sequential A0Interleave
1A01
A02A02
A04A04
A08A08
A0Reserved A0
Reserved
A0Full Page
A0CAS Latency
A0Reserved
A0Reserved
2
A03
Reserved
A0A6 A5 A4
A00 0 0
A00 1 0
A00 1 1
A01 0 0
A00 0 1
t
RSC
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
CMS
t
CMH
t
AS
t
AH
CLK
CS
RAS
CAS
A0-A12
BS0,1 Register
set data
next
command
A0
Reserved
"0"
"0"
"0"
"0"
WE
A0BS1 "0"
W982516AH
Publication Release Date: February 2001
- 19 - Revision A2
OPERATING TIMING EXAMPLE
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS1
WE
CAS
RAS
CS
BS0
tRC tRC
tRC tRC
tRAS tRP tRAS tRP
tRPtRAS tRAS
tRCD tRCD tRCD tRCD
tAC tAC tAC tAC
tRRD tRRD tRRD tRRD
Active Read
Active Read
Active
Active
Active
Read
Read
Precharge
Precharge
Precharge
RAa RBb RAc RBd RAe
RAa CAw RBb CBx RAc CAy RBd CBz RAe
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3 cy0 cy1 cy2 cy3
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W982516AH
- 20 -
Operating Timing Example, continued
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
CKE
DQM
A0-A9,
A11,12
A10
BS1
WE
CAS
RAS
CS
BS0
tRC tRC
tRC
tRAS tRP tRAS tRP
tRAS tRP tRAS
tRCD tRCD tRCD tRCD
tAC tAC tAC tAC
tRRD tRRD tRRD tRRD
Active Read
Active Read
Active
Active
Active
Read
Read
tRC
RAa RBb RAc RBd RAe
DQ aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3 cy0 cy1 cy2 cy3 dz0
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
AP* AP*
RAa CAw RBb CBx RAc CAy RBd RAe
CBz
W982516AH
Publication Release Date: February 2001
- 21 - Revision A2
Operating Timing Example, continued
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
tRC tRC
tRC
tRAS tRP tRAS
tRP tRAS tRP
tRCD tRCD tRCD
tRRD tRRD
RAa
RAa CAx
RBb
RBb CBy
RAc
RAc CAz
ax0 ax1 ax2 ax3 ax4 ax5 ax6 by0 by1 by4 by5 by6 by7 CZ0
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS0
WE
CAS
RAS
CS
BS1
Active Read
Precharge Active Read
Precharge Active
tAC tAC
Read
Precharge
tAC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W982516AH
- 22 -
Operating Timing Example, continued
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Autoprecharge)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
tRC
tRC
tRAS tRP tRAS
tRAS tRP
tRCD tRCD tRCD
tRRD tRRD
ax0 ax1 ax2 ax3 ax4 ax5 ax6 ax7 by0 by1 by4 by5 by6 CZ0
RAa
RAa
CAx
RBb
RBb CBy
(CLK = 100 MHz)
RAc
RAc CAz
* AP is the internal precharge start timing
Active Read
Active
Active Read
tCAC tCAC
tCAC
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS1
WE
CAS
RAS
CS
Bank #0
Idle
Bank #1
Bank #2
Bank #3
Read
AP*
AP*
BS0
W982516AH
Publication Release Date: February 2001
- 23 - Revision A2
Operating Timing Example, continued
Interleaved Bank Write (Burst Length = 8)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
tRC
tRAS tRP
tRAS tRP
tRCD tRCD tRCD
tRRD tRRD
RAa
RAa CAx
RBb
RBb CBy
RAc
RAc CAz
ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 by2 by3 by4 by5 by6 by7 CZ0 CZ1 CZ2
(CLK = 100 MHz)
Write
Precharge
Active
Active Write
Precharge
Active Write
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS0
WE
CAS
RAS
CS
BS1
Idle
Bank #0
Bank #1
Bank #2
Bank #3
tRAS
W982516AH
- 24 -
Operating Timing Example, continued
Interleaved Bank Write (Burst Length = 8, Autoprecharge)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
tRC
tRAS tRP tRAS
tRAS tRP
tRCD
t
RCD tRCD
tRRD tRRD
RAa
RAa CAx
RBb
RBb CBy
RAb
RAc
ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 by2 by3 by4 by5 by6 by7 CZ0 CZ1 CZ2
CAz
(CLK = 100 MHz)
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS0
WE
CAS
RAS
CS
BS1
Active Write Write
Active
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
Active Write AP*
W982516AH
Publication Release Date: February 2001
- 25 - Revision A2
Operating Timing Example, continued
Page Mode Read (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
t
CCD
t
CCD
t
CCD
t
RAS
t
RP
t
RAS
t
RP
t
RCD
t
RCD
t
RRD
RAa
RAa CAI
RBb
RBb CBx CAy CAm CBz
a0 a1 a2 a3 bx0 bx1 Ay0 Ay1 Ay2 am0 am1 am2 bz0 bz1 bz2 bz3
(CLK = 100 MHz)
* AP is the internal precharge start timing
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS0
WE
CAS
RAS
CS
BS1
Active Read
Active Read
Read Read
Read
Precharge
t
AC
t
AC
t
AC
t
AC
t
AC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
AP*
W982516AH
- 26 -
Operating Timing Example, continued
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3)
0123456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
tRAS tRP
tRCD
tWR
RAa
RAa CAx CAy
ax0 ax1 ax2 ax3 ax4 ax5 ay1
ay0 ay2 ay4
ay3
Q Q Q Q Q Q D DD
D
D
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS0
WE
CAS
RAS
CS
BS1
Active Read Write Precharge
tAC
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W982516AH
Publication Release Date: February 2001
- 27 - Revision A2
Operating Timing Example, continued
Auto Precharge Read (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS1
WE
CAS
RAS
CS
BS0
tRC tRC
tRAS tRP tRAS tRP
tRCD tRCD
tAC
Active Read AP* Active Read AP*
RAa RAb
RAa CAw RAb CAx
aw0 aw1 aw2 aw3
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
tAC
bx0 bx1 bx2 bx3
W982516AH
- 28 -
Operating Timing Example, continued
Auto Precharge Write (Burst Length = 4)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS1
WE
CAS
RAS
CS
BS0
t
RC
t
RC
t
RAS
t
RP
t
RAS
t
RP
RAa
t
RCD
t
RCD
RAb RAc
RAa CAw RAb CAx RAc
aw0 aw1 aw2 aw3 bx0 bx1 bx2 bx3
Active
Active Write AP* Active Write AP*
* AP is the internal precharge start timing
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W982516AH
Publication Release Date: February 2001
- 29 - Revision A2
Operating Timing Example, continued
Auto Refresh Cycle
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
All Banks
Prechage Auto
Refresh Auto Refresh (Arbitrary Cycle)
tRCtRP tRC
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
WE
CAS
RAS
CS
BS0,1
W982516AH
- 30 -
Operating Timing Example, continued
Self Refresh Cycle
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
CLK
DQ
CKE
DQM
A0-A9,
A11,12
A10
BS0,1
WE
CAS
RAS
CS
t
CKS
t
SB
t
CKS
t
CKS
All Banks
Precharge Self Refresh
Entry Arbitrary Cycle
t
RP
Self Refresh Cycle
t
RC
No Operation Cycle
W982516AH
Publication Release Date: February 2001
- 31 - Revision A2
Operating Timing Example, continued
Burst Read and Single Write (Burst Length = 4, CAS Latency = 3)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
CLK
CS
RAS
CAS
WE
BS0
BS1
A10
A0-A9,
A11,12
DQM
CKE
DQ
(CLK = 100 MHz)
t
RCD
RBa
RBa CBv CBw CBx CBy CBz
av0 av1 av2 av3 aw0 ax0 ay0 az0 az1 az2 az3
Q Q Q Q D DD Q Q Q Q
t
AC
t
AC
Read Read
Single WriteActive
Bank #0
Idle
Bank #1
Bank #2
Bank #3
W982516AH
- 32 -
Operating Timing Example, continued
PowerDown Mode
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
(CLK = 100 MHz)
RAa CAa RAa CAx
RAa RAa
ax0 ax1 ax2 ax3
tSB
tCKS tCKS tCKS
tSB
tCKS
Active Standby
Power Down mode Precharge Standby
Power Down mode
Active NOP Precharge NOPActive
Note: The PowerDown Mode is entered by asserting CKE "low".
All Input/Output buffers (except CKE buffers) are turned off in the PowerDown mode.
When CKE goes high, command input must be No operation at next CLK rising edge.
CLK
DQ
CKE
DQM
A0-A9
A11,12
A10
BS
WE
CAS
RAS
CS
Read
W982516AH
Publication Release Date: February 2001
- 33 - Revision A2
Operating Timing Example, continued
Autoprecharge Timing (Read Cycle)
Read AP
0 1110987654321
Q0
Q0
Read AP Act
Q1
Read AP Act
Q1 Q2
AP ActRead
Act
Q0
Q3
(1) CAS
Latency=2
Read
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate command to
the start of internal precgarging must be at least t RAS(min).
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note )
tRP
tRP
tRP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
tRP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
Q0
Read AP Act
Q0
Read AP Act
Q1
Q0
Read AP Act
Q1 Q2 Q3
Read AP Act
Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7
(2) CAS
Latency=3
tRP
tRP
tRP
tRP
W982516AH
- 34 -
Operating Timing Example, continued
Autoprecharge Timing (Write Cycle)
Write ActAP
0 1110987654321
D0
D0
D0
D0
AP Act
D1
AP Act
D1
D1
D2
D2
D3
D3 D4 D5 D6 D7
AP Act
Write
Write
Write
(1) CAS
Latency=2
Write
Act
AP
When the Auto precharge command is asserted, the period from Bank
Activate
command to the start of internal precgarging must be at least tRAS (min).
represents the Write with Auto precharge
command.
represents the start of internal
precharging.
represents the Bank Activate
command.
Note )
tRPtWR
tRP
tWR
tRPtWR
tRPtWR
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
D0
AP Act
AP Act
D1
D0
AP Act
D1 D2 D3
AP Act
D0 D1 D2 D3 D4 D5 D6 D7
Write
Write
Write
Write
D0
(2) CAS
Latency=3
tRPtWR
tRPtWR
tRPtWR
tRPtWR
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
DQ
DQ
DQ
W982516AH
Publication Release Date: February 2001
- 35 - Revision A2
Operating Timing Example, continued
Timing Chart of Read to Write Cycle
Note: The Output data must be masked by DQM to avoid I/O conflict
1110987654321
0
(1) CAS Latency=2
In the case of Burst Length = 4
Read
Read
Write
Write
DQ
DQ
( b ) Command
DQM
DQM
D0 D1 D2 D3
D0 D1 D2 D3
( a ) Command
(2) CAS Latency=3
Read Write
Read Write
D0 D1 D2 D3
( a ) Command
DQ
DQ
DQM
( b ) Command
DQM
D0 D1 D2 D3
Timing Chart of Write to Read Cycle
ReadWrite
01110987654321
Q0
Read
Q1 Q2 Q3
Read
Read
Write
Write
Q0 Q1 Q2 Q3
Write
Q0 Q1 Q2 Q3
D0 D1
DQ
DQ
( a ) Command
DQ
DQ
DQM
( b ) Command
DQM
( a ) Command
( b ) Command
DQM
DQM
In the case of Burst Length=4
(1) CAS Latency=2
(2) CAS Latency=3
D0
D0 D1
Q0 Q1 Q2 Q3D0
W982516AH
- 36 -
Timing Chart of Burst Stop Cycle (Burst Stop Command)
Read BST
0 1110987654321
DQ Q0 Q1 Q2 Q3
BST
( a ) CAS latency =2
Command
( b )CAS latency = 3
(1) Read cycle
Q4
(2) Write cycle
Command
Read
Command
Q0 Q1 Q2 Q3 Q4
Q0 Q1 Q2 Q3 Q4
DQ
DQ
Write BST
Note: represents the Burst stop commandBST
Timing Chart of Burst Stop Cycle (Precharge Command)
In the case of Burst Lenght = 8
Read PRCG
0 1110987654321
Q0 Q1 Q2 Q3
Q0 Q1 Q2 Q3
Read PRCG
Q4
Q4
( a )CAS latency =2
Command
( b )CAS latency = 3
Command
DQ
DQ
DQ
( b )CAS latency = 3
Command
(1) Read cycle
(2) Write cycle
Write
Write PRCG
PRCG
( a ) CAS latency =2
Command
DQM
DQM
tWR
tWR
D0 D1 D2 D3 D4
DQ
D0 D1 D2 D3 D4
DQ
W982516AH
Publication Release Date: February 2001
- 37 - Revision A2
Operating Timing Example, continued
CKE/DQM Input Timing (Write Cycle)
7
6
5432
1
CKE MASK
( 1 )
D1 D6D5D3D2
CLK cycle No.
External
Internal
CKE
DQM
DQ
7
6
5432
1
( 2 )
D1 D6D5D3D2
CLK cycle No.
External
Internal
CKE
DQM
DQ
76
543
2
1
( 3 )
D1 D6
D5D4D3D2
CLK cycle No.
External
CKE
DQM
DQ
DQM MASK
DQM MASK CKE MASK
CKE MASK
Internal
CLK
CLK
CLK
W982516AH
- 38 -
Operating Timing Example, continued
CKE/DQM Input Timing (Read Cycle)
7
6
5432
1
( 1 )
Q
1Q
6
Q
4
Q
3
Q
2
CLK cycle No.
External
Internal
CKE
DQM
DQ Open Open
7
6
5432
1
Q
1Q
6
Q
3
Q
2
CLK cycle No.
External
Internal
CKE
DQM
DQ Open
( 2 )
765432
1
Q
1Q
6
Q
3
Q
2
CLK cycle No.
External
Internal
CKE
DQM
DQ
Q
5
Q
4
( 3 )
Q
4
CLK
CLK
CLK
W982516AH
Publication Release Date: February 2001
- 39 - Revision A2
Operating Timing Example, continued
Self Refresh/Power Down Mode Exit Timing
Asynchronous Control
Input Buffer turn on time ( Power down mode exit time ) is specified by tCKS(min) + tCK(min)
Command
NOP
CLK
CKE
Command
A ) tCK < tCKS(min)+tCK(min)
Input Buffer Enable
Command
CLK
CKE
Command
B) tCK
>= tCKS(min) + tCK
(min)
Input Buffer Enable
Note )
Command
NOP
All Input Buffer(Include CLK Buffer) are turned off in the Power Down mode
and Self Refresh mode
Represents the No-Operation command
Represents one command
tCK
tCK
t
CKS
(min)+t
CK
(min)
t
CKS
(min)+t
CK
(min)
W982516AH
- 40 -
PACKAGE DIMENSION
54L TSOP (II)-400 mil
SEATING PLANE
E
D
A2
A1
A
eb
ZD
1 27
54 28
HE
Y
L
C
L1
ZD 0.71 0.028
0.002
0.009
MAX.MIN. NOM.
A2
b
A
A1
0.24 1.00
0.05
0.40
1.20
0.15
SYM.
DIMENSION
(MM)
MAX.MIN. NOM.
e0.80 0.0315
0.016
L0.40 0.50 0.60 0.020 0.024
0.396
E10.06 10.16 10.26 0.400 0.404
0.871
D22.2222.12 22.62 0.875 0.905
0.039 0.016
0.047
0.006
DIMENSION
(INCH)
0.10 0.004
0.32
L1 0.80 0.032
c0.15 0.006
0.012
0.45511.7611.56 11.96 0.463 0.471
HE
Y0.10 0.004
Controlling Dimension: Millimeters
W982516AH
Publication Release Date: February 2001
- 41 - Revision A2
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5796096
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-27190505
FAX: 886-2-27197502
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd;
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: 408-9436666
FAX: 408-5441798
Note: All data and specifications are subject to change withou t notice.
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5796096
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-27197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-27190505
FAX: 886-2-27197502
Winbond Electronics (H.K.) Ltd.
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd;
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2727 N. First Street, San Jose,
CA 95134, U.S.A.
TEL: 408-9436666
FAX: 408-5441798
Note: All data and specifications are subject to change withou t notice.
