W982516AH 4M x 4 BANKS x 16 BIT SDRAM GENERAL DESCRIPTION W982516AH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. Using pipelined architecture and 0.175 m process technology, W982516AH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the personal computer industrial standard, W982516AH is sorted into three speed grades: -7, -75, and 8H. The -7 is compliant to the 143 MHz/CL3 or PC133/CL2 specification, the -75 is compliant to the PC133/CL3 specification, the -8H is compliant to the PC100/CL2 specification. For handheld device application, we also provide a low power option, the grade of 75L, with Self Refresh Current under 1mA. Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time. By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W982516AH is ideal for main memory in high performance applications. FEATURES * * * * * * * * * * * * * 3.3V 0.3V Power Supply Up to 143 MHz Clock Frequency 4,194,304 Words x 4 Banks x 16 Bits Organization Self Refresh Mode: Standard and Low Power CAS Latency: 2 and 3 Burst Length: 1, 2, 4, 8, and Full Page Burst Read, Single Writes Mode Byte Data Controlled by LDQM, UDQM Power-down Mode Auto-precharge and Controlled Precharge 8K Refresh Cycles/64 mS Interface: LVTTL Packaged in TSOP II 54-pin, 400 mil - 0.80 AVAILABLE PART NUMBER PART NUMBER SPEED GRADE SELF REFRESH CURRENT (MAX.) W982516AH-7 PC133/CL2 3 mA W982516AH-75 PC133/CL3 3 mA W982516AH-8H PC100/CL2 3 mA W982516AH75L PC133/CL3 1 mA -1- Publication Release Date: February 2001 Revision A2 W982516AH PIN CONFIGURATION VCC 1 54 V SS DQ0 2 53 DQ15 V C CQ 3 52 V SSQ DQ1 4 51 DQ14 DQ2 5 50 DQ13 V SSQ 6 49 V C CQ DQ3 7 48 DQ12 8 47 DQ11 V C CQ 9 46 V SSQ DQ5 10 45 DQ10 DQ6 11 44 DQ9 V SSQ 12 43 V C CQ DQ7 13 42 DQ8 VCC 14 41 V SS LDQM 15 40 NC DQ4 WE 16 39 UDQM CAS 17 38 CLK RAS 18 37 CKE CS 19 36 A12 BS0 20 35 A11 BS1 21 34 A9 A 1 0 /AP 22 33 A8 A0 23 32 A7 A1 24 31 A6 A2 25 30 A5 A3 26 29 A4 VCC 27 28 V SS -2- W982516AH PIN DESCRIPTION PIN NO. PIN NAME FUNCTION 23-26, 22, 29-36 A0-A12 Address 20, 21 BS0, BS1 Bank Select 2, 4, 5, 7, 8, 10, 11, 13, 42, 44, DQ0-DQ16 45, 47, 48, 50, 51, 53 19 18 CS RAS DESCRIPTION Multiplexed pins for row and column address. Row address: A0-A12. Column address: A0-A8. Select bank to activate during row address latch time, or bank to read/write during address latch time. Data Multiplexed pins for data output and input. Input/Output Chip Select Disable or enable the command decoder. When command decoder is disabled, new command is ignored and previous operation continues. Command input. When sampled at the rising edge of Row Address the clock, RAS , CAS and WE define the operation Strobe to be executed. Column Address Strobe 17 CAS 16 WE 15, 39 LDQM, UDQM 38 CLK Clock Inputs 37 CKE CKE controls the clock activation and deactivation. Clock Enable When CKE is low, Power Down mode, Suspend mode, or Self Refresh mode is entered. 1, 14, 27 VCC Power (+3.3V) Power for input buffers and logic circuit inside DRAM. 28, 41, 54 VSS 3, 9, 43, 49 VCCQ 6, 12, 46, 52 VSSQ 40 NC Referred to RAS Write Enable Referred to RAS The output buffer is placed at Hi-Z(with latency of 2) Input/Output when DQM is sampled high in read cycle. In write cycle, sampling DQM high will block the write operation Mask with zero latency. Ground System clock used to sample inputs on the rising edge of clock. Ground for input buffers and logic circuit inside DRAM. Power (+3.3V) Separated power from VCC, to improve DQ noise for I/O Buffer immunity. Ground Separated ground from VSS, to improve DQ noise for I/O Buffer immunity. No Connection No connection -3- Publication Release Date: February 2001 Revision A2 W982516AH BLOCK DIAGRAM CLK CLOCK BUFFER CKE CS CONTROL RAS GENERATOR SIGNAL COMMAND CAS DECODER COLUMN DECODER COLUMN DECODER A10 BANK #0 MODE R E G IST E R A0 CELL ARRAY BANK #1 SENSE AMPLIFIER SENSE AMPLIFIER ADDRESS BUFFER DATA CONTROL DQ BUFFER CIRCUIT DQ0 DQ15 COLUMN COUNTER LDQM UDQM COLUMN DECODER CELL ARRAY BANK #2 SENSE AMPLIFIER Note: The cell array configuration is 8192 * 512 * 16. -4- COLUMN DECODER ROW DECODER REFRESH COUNTER ROW DECODER A9 A11 A12 BS0 BS1 CELL ARRAY ROW DECODER ROW DECODER WE CELL ARRAY BANK #3 SENSE AMPLIFIER W982516AH ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT NOTES Input, Output Voltage VIN, VOUT -0.3 - VCC +0.3 V 1 Power Supply Voltage VCC, VCCQ -0.3-4.6 V 1 Operating Temperature TOPR 0-70 C 1 Storage Temperature TSTG -55-150 C 1 TSOLDER 260 C 1 PD 1 W 1 IOUT 50 mA 1 Soldering Temperature (10s) Power Dissipation Short Circuit Output Current Note 1: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device. RECOMMENDED DC OPERATING CONDITIONS (Ta = 0 to 70C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTES VCC 3.0 3.3 3.6 V 2 VCCQ 3.0 3.3 3.6 V 2 Input High Voltage VIH 2.0 - VCC +0.3 V 2 Input Low Voltage VIL -0.3 - 0.8 V 2 Power Supply Voltage Power Supply Voltage (for I/O Buffer) Note 2: VIH(max) = VCC/ VCCQ+1.2V for pulse width < 5 nS VIL(min) = VSS/ VSSQ-1.2V for pulse width < 5 nS CAPACITANCE (VCC = 3.3V, f = 1 MHz, TA = 25C) PARAMETER SYMBOL MIN. MAX. UNIT Input Capacitance (A0 to A12, BS0, BS1, CS , RAS , CAS , WE , LDQM, UDQM, CKE) CI - 3.8 pf Input Capacitance (CLK) CCLK - 3.5 pf Input/Output Capacitance CIO - 6.5 pf Note: These parameters are periodically sampled and not 100% tested. -5- Publication Release Date: February 2001 Revision A2 W982516AH AC CHARACTERISTICS AND OPERATING CONDITION (Vcc = 3.3V 0.3V, TA = 0 to 70C; Notes: 5, 6, 7, 8) PARAMETER SYM. -75/75L -8H (PC133, CL3) (PC100) MIN. MIN. MAX. MAX. tRC 56 Active to precharge Command Period tRAS 40 Active to Read/Write Command Delay Time tRCD 15 20 20 Read/Write(a) to Read/Write(b) Command Period tCCD 1 1 1 Precharge to Active Command Period tRP 15 20 20 Active(a) to Active(b) Command Period tRRD 15 15 20 Write Recovery Time tWR 7.5 10 10 7 7.5 8 CL* = 2 CLK Cycle Time CL* = 2 tCK CL* = 3 CLK High Level Width CLK Low Level Width Access Time from CLK CL* = 2 65 MIN. Ref/Active to Ref/Active Command Period CL* = 3 UNIT -7 (PC133, CL2) 100000 45 MAX. 68 100000 48 100000 Cycle 7.5 1000 10 1000 10 1000 7 1000 7.5 1000 8 1000 tCH 2.5 tCL 2.5 2.5 CL* = 3 3 2.5 5.4 tAC 3 6 5.4 6 5.4 3 6 Output Data Hold Time tOH 3 Output Data High Impedance Time tHZ 3 Output Data Low Impedance Time tLZ 0 Power Down Mode Entry Time tSB 0 7 0 7.5 0 8 Transition Time of CLK (Rise and Fall) tT 0.5 10 0.5 10 0.5 10 Data-in Set-up Time tDS 1.5 1.5 2 Data-in Hold Time 7 3 7.5 3 tDH 0.8 0.8 1 tAS 1.5 1.5 2 Address Hold Time tAH 0.8 0.8 1 CKE Set-up Time tCKS 1.5 1.5 2 CKE Hold Time tCKH 0.8 0.8 1 Command Set-up Time tCMS 1.5 1.5 2 Command Hold Time tCMS 0.8 0.8 1 Refresh Time tREF Mode register Set Cycle Time tRSC *CL = CAS Latency -6- 64 15 8 0 Address Set-up Time 14 nS 3 0 64 nS 64 16 mS nS W982516AH DC CHARACTERISTICS (VCC = 3.3V 0.3V, TA = 0- 70C) PARAMETER SYM. -7 (PC133, CL2) MIN. MAX. -75/75L (PC133, CL3) MIN. MAX. UNIT -8H (PC100) MIN. NOTES MAX. 1 Bank Operation ICC1 80 75 70 3 CKE = VIH ICC2 40 35 30 3 VIH/L = VIH (min.)/VIL (max.) CKE = VIL ICC2P 1 1 1 3 Bank: Inactive state (Power down mode) Standby Current CKE = VIH ICC2S 10 10 10 VIH/L = VIH (min.)/VIL (max.) CKE = VIL ICC2PS 1 1 1 BANK: Inactive state (Power down mode) No Operating Current CKE = VIH ICC3 60 55 50 CKE = VIL ICC3P 10 10 10 ICC4 100 95 90 3, 4 ICC5 170 160 150 3 Operating Current tCK = min., tRC = min. Active precharge command cycling without burst operation Standby Current tCK = min, CS = VIH CLK = VIL, CS = VIH tCK = min., mA CS = VIH (min.) BANK: Active state (4 banks) (Power down mode) Burst Operating Current tCK = min. Read/ Write command cycling Auto Refresh Current tCK = min. Auto refresh command cycling Self Refresh Current Standard ICC6 3 3 3 Self Refresh Mode CKE = 0.2V Low Power ICC6L - 1 - PARAMETER Input Leakage Current SYMBOL MIN. MAX. UNIT II(L) -5 5 A IO(L) -5 5 A VOH 2.4 - V VOL - 0.4 V NOTES (0V VIN VCC, all other pins not under test = 0V) Output Leakage Current (Output disable, 0V VOUT VCCQ) LVTTL Output H Level Voltage (IOUT = -2 mA ) LVTTL Output L Level Voltage (IOUT = 2 mA ) -7- Publication Release Date: February 2001 Revision A2 W982516AH Notes: 1. Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices. 2. All voltages are referenced to VSS 3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of tCK and tRC. 4. These parameters depend on the output loading conditions. Specified values are obtained with output open. 5. Power up sequence is further described in the "Functional Description" section. 6. AC Testing Conditions Output Reference Level 1.4V/1.4V Output Load See diagram below Input Signal Levels 2.4V/0.4V Transition Time (Rise and Fall) of Input Signal 2 nS Input Reference Level 1.4V 1.4 V 50 ohms output Z = 50 ohms 50pF AC TEST LOAD 7. Transition times are measured between VIH and VIL. 8. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to output level. -8- W982516AH OPERATION MODE Fully synchronous operations are performed to latch the commands at the positive edges of CLK. Table 1 shows the truth table for the operation commands. Table 1 Truth Table (Note (1) , (2)) COMMAND DEVICE STATE CKEN-1 CKEN DQM BS0, 1 A10 A0-A9 A11, A12 CS RAS CAS WE Bank Active Idle H x x Bank Precharge Any H x x v v v L L H H v L x L L H L Precharge All Any H x x x H x L L H L Write Active (3) H x x v L v L H L L Write with Autoprecharge Active (3) H x x v H v L H L L Read Active (3) H x x v L v L H L H Read with Autoprecharge Active (3) H x x v H v L H L H Mode Register Set Idle H x x v v v L L L L No-operation Any H x x x x x L H H H Active (4) H x x x x x L H H L Device Deselect Any H x x x x x H x x x Auto-refresh Idle H H x x x x L L L H Burst Stop Self-refresh Entry Self-refresh Exit Clock Suspend Mode Entry Power Down Mode Entry Clock Suspend Mode Exit Power Down Mode Exit Idle H L x x x x L L L H Idle (S.R.) L H x x x x H x x x L H x x x x L H H x Active H L x x x x x x x x Idle Active (5) H L x x x x H x x x H L x x x x L H H x Active L H x x x x x x x x Any L H x x x x H x x x (Power down) L H x x x x L H H x Data Write/Output Enable Active H x L x x x x x x x Data Write/Output Disable Active H x H x x x x x x x Notes: (1) v = valid x = Don't care L = Low Level H = High Level (2) CKEn signal is input level when commands are provided. CKEn-1 signal is the input level one clock cycle before the command is issued. (3) These are state of bank designated by BS0, BS1 signals. (4) Device state is full page burst operation. (5) Power Down Mode can not be entered in the burst cycle. When this command asserts in the burst cycle, device state is clock suspend mode. -9- Publication Release Date: February 2001 Revision A2 W982516AH FUNCTIONAL DESCRIPTION Power Up and Initialization The default power up state of the mode register is unspecified. The following power up and initialization sequence need to be followed to guarantee the device being preconditioned to each user specific needs. During power up, all Vcc and VccQ pins must be ramp up simultaneously to the specified voltage when the input signals are held in the "NOP" state. The power up voltage must not exceed Vcc +0.3V on any of the input pins or Vcc supplies. After power up, an initial pause of 200 S is required followed by a precharge of all banks using the precharge command. To prevent data contention on the DQ bus during power up, it is required that the DQM and CKE pins be held high during the initial pause period. Once all banks have been precharged, the Mode Register Set Command must be issued to initialize the Mode Register. An additional eight Auto Refresh cycles (CBR) are also required before or after programming the Mode Register to ensure proper subsequent operation. Programming Mode Register After initial power up, the Mode Register Set Command must be issued for proper device operation. All banks must be in a precharged state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. The Mode Register Set Command is activated by the low signals of RAS, CAS, CS and WE at the positive edge of the clock. The address input data during this cycle defines the parameters to be set as shown in the Mode Register Operation table. A new command may be issued following the mode register set command once a delay equal to tRSC has elapsed. Please refer to the next page for Mode Register Set Cycle and Operation Table. Bank Activate Command The Bank Activate command must be applied before any Read or Write operation can be executed. The operation is similar to RAS activate in EDO DRAM. The delay from when the Bank Activate command is applied to when the first read or write operation can begin must not be less than the RAS to CAS delay time (tRCD). Once a bank has been activated it must be precharged before another Bank Activate command can be issued to the same bank. The minimum time interval between successive Bank Activate commands to the same bank is determined by the RAS cycle time of the device (tRC). The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank to Bank delay time (tRRD). The maximum time that each bank can be held active is specified as tRAS (max). Read and Write Access Modes After a bank has been activated , a read or write cycle can be followed. This is accomplished by setting RAS high and CAS low at the clock rising edge after minimum of tRCD delay. WE pin voltage level defines whether the access cycle is a read operation (WE high), or a write operation (WE low). The address inputs determine the starting column address. Reading or writing to a different row within an activated bank requires the bank be precharged and a new Bank Activate command be issued. When more than one bank is activated, interleaved bank Read or Write operations are possible. By using the programmed burst length and alternating the access and precharge operations between multiple banks, seamless data access operation among many different pages can be realized. Read or Write Commands can also be issued to the same bank or between active banks on every clock cycle. - 10 - W982516AH Burst Read Command The Burst Read command is initiated by applying logic low level to CS and CAS while holding RAS and WE high at the rising edge of the clock. The address inputs determine the starting column address for the burst. The Mode Register sets type of burst (sequential or interleave) and the burst length (1, 2, 4, 8, full page) during the Mode Register Set Up cycle. Table 2 and 3 in the next page explain the address sequence of interleave mode and sequential mode. Burst Write Command The Burst Write command is initiated by applying logic low level to CS, CAS and WE while holding RAS high at the rising edge of the clock. The address inputs determine the starting column address. Data for the first burst write cycle must be applied on the DQ pins on the same clock cycle that the Write Command is issued. The remaining data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. Data supplied to the DQ pins after burst finishes will be ignored. Read Interrupted by a Read A Burst Read may be interrupted by another Read Command. When the previous burst is interrupted, the remaining addresses are overridden by the new read address with the full burst length. The data from the first Read Command continues to appear on the outputs until the CAS latency from the interrupting Read Command the is satisfied. Read Interrupted by a Write To interrupt a burst read with a Write Command, DQM may be needed to place the DQs (output drivers) in a high impedance state to avoid data contention on the DQ bus. If a Read Command will issue data on the first and second clocks cycles of the write operation, DQM is needed to insure the DQs are tri-stated. After that point the Write Command will have control of the DQ bus and DQM masking is no longer needed. Write Interrupted by a Write A burst write may be interrupted before completion of the burst by another Write Command. When the previous burst is interrupted, the remaining addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied. Write Interrupted by a Read A Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is activated. The DQs must be in the high impedance state at least one cycle before the new read data appears on the outputs to avoid data contention. When the Read Command is activated, any residual data from the burst write cycle will be ignored. Burst Stop Command A Burst Stop Command may be used to terminate the existing burst operation but leave the bank open for future Read or Write Commands to the same page of the active bank, if the burst length is full page. Use of the Burst Stop Command during other burst length operations is illegal. The Burst Stop Command is defined by having RAS and CAS high with CS and WE low at the rising edge of the clock. The data DQs go to a high impedance state after a delay which is equal to the CAS Latency in a burst - 11 - Publication Release Date: February 2001 Revision A2 W982516AH read cycle interrupted by Burst Stop. If a Burst Stop Command is issued during a full page burst write operation, then any residual data from the burst write cycle will be ignored. Addressing Sequence of Sequential Mode A column access is performed by increasing the address from the column address which is input to the device. The disturb address is varied by the Burst Length as shown in Table 2. Table 2 Address Sequence of Sequential Mode DATA ACCESS ADDRESS BURST LENGTH Data 0 n BL = 2 (disturb address is A0) Data 1 n+1 No address carry from A0 to A1 Data 2 n+2 BL = 4 (disturb addresses are A0 and A1) Data 3 n+3 No address carry from A1 to A2 Data 4 n+4 Data 5 n+5 BL = 8 (disturb addresses are A0, A1 and A2) Data 6 n+6 No address carry from A2 to A3 Data 7 n+7 Addressing Sequence of Interleave Mode A column access is started in the input column address and is performed by inverting the address bit in the sequence shown in Table 3. Table 3 Address Sequence of Interleave Mode DATA ACCESS ADDRESS Data 0 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 1 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 2 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 3 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 4 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 5 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 6 A8 A7 A6 A5 A4 A3 A2 A1 A0 Data 7 A8 A7 A6 A5 A4 A3 A2 A1 A0 - 12 - BUST LENGTH BL = 2 BL = 4 BL = 8 W982516AH Auto-precharge Command If A10 is set to high when the Read or Write Command is issued, then the auto-precharge function is entered. During auto-precharge, a Read Command will execute as normal with the exception that the active bank will begin to precharge automatically before all burst read cycles have been completed. Regardless of burst length, it will begin a certain number of clocks prior to the end of the scheduled burst cycle. The number of clocks is determined by CAS latency. A Read or Write Command with auto-precharge can not be interrupted before the entire burst operation is completed. Therefore, use of a Read, Write, or Precharge Command is prohibited during a read or write cycle with auto-precharge. Once the precharge operation has started, the bank cannot be reactivated until the Precharge time (tRP) has been satisfied. Issue of Auto-pecharge command is illegal if the burst is set to full page length. If A10 is high when a Write Command is issued, the Write with Auto-pecharge function is initiated. The SDRAM automatically enters the precharge operation one clock delay from the last burst write cycle. This delay is referred to as Write tWR. The bank undergoing auto-precharge can not be reactivated until tWR and tRP are satisfied. This is referred to as tDAL, Data-in to Active delay (tDAL = tWR + tRP). When using the Auto-precharge Command, the interval between the Bank Activate Command and the beginning of the internal precharge operation must satisfy tRAS (min). Precharge Command The Precharge Command is used to precharge or close a bank that has been activated. The Precharge Command is entered when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The Precharge Command can be used to precharge each bank separately or all banks simultaneously. Three address bits, A10, BS0, and BS1, are used to define which bank(s) is to be precharged when the command is issued. After the Precharge Command is issued, the precharged bank must be reactivated before a new read or write access can be executed. The delay between the Precharge Command and the Activate Command must be greater than or equal to the Precharge time (tRP). Self Refresh Command The Self Refresh Command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising edge of the clock. All banks must be idle prior to issuing the Self Refresh Command. Once the command is registered, CKE must be held low to keep the device in Self Refresh mode. When the SDRAM has entered Self Refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during Self Refresh Operation to save power. The device will exit Self Refresh operation after CKE is returned high. A minimum delay time is required when the device exits Self Refresh Operation and before the next command can be issued. This delay is equal to the tAC cycle time plus the Self Refresh exit time. If, during normal operation, AUTO REFRESH cycles are issued in bursts (as opposed to being evenly distributed), a burst of 4,096 AUTO REFRESH cycles should be completed just prior to entering and just after exiting the self refresh mode. Power Down Mode The Power Down mode is initiated by holding CKE low. All of the receiver circuits except CKE are gated off to reduce the power. The Power Down mode does not perform any refresh operations, therefore the device can not remain in Power Down mode longer than the Refresh period (tREF) of the device. - 13 - Publication Release Date: February 2001 Revision A2 W982516AH The Power Down mode is exited by bringing CKE high. When CKE goes high, a No Operation Command is required on the next rising clock edge, depending on tCK. The input buffers need to be enabled with CKE held high for a period equal to tCKS (min) + tCK (min). No Operation Command The No Operation Command should be used in cases when the SDRAM is in a idle or a wait state to prevent the SDRAM from registering any unwanted commands between operations. A No Operation Command is registered when CS is low with RAS, CAS, and WE held high at the rising edge of the clock. A No Operation Command will not terminate a previous operation that is still executing, such as a burst read or write cycle. Deselect Command The Deselect Command performs the same function as a No Operation Command. Deselect Command occurs when CS is brought high, the RAS, CAS, and WE signals become don't cares. Clock Suspend Mode During normal access mode, CKE must be held high enabling the clock. When CKE is registered low while at least one of the banks is active, Clock Suspend Mode is entered. The Clock Suspend mode deactivates the internal clock and suspends any clocked operation that was currently being executed. There is a one clock delay between the registration of CKE low and the time at which the SDRAM operation suspends. While in Clock Suspend mode, the SDRAM ignores any new commands that are issued. The Clock Suspend mode is exited by bringing CKE high. There is a one clock cycle delay from when CKE returns high to when Clock Suspend mode is exited. - 14 - W982516AH TIMING WAVEFORMS Command Input Timing Command Input Timing tCL tCK tCH VIH CLK VIL tT tCMS tCMH tCMS tCMH tCMS tCMH tCMS tCMH tAS tAH tCMH tT tCMS CS RAS CAS WE A0-A12 BS0, 1 tCKS tCKH tCKS tCKH tCKS tCKH CKE - 15 - Publication Release Date: February 2001 Revision A2 W982516AH Timing Waveforms, continued Read Timing Read CAS Latency CLK CS RAS CAS WE A0 - A12 BS0, 1 tAC tAC tLZ tHZ tOH tOH Valid Data-Out Valid Data-Out DQ Read Command Burst Length - 16 - W982516AH Timing Waveforms, continued Control Timing of Input/Output Data Input Data (Word Mask) CLK tCMS tCMH tCMH tCMS DQM tDS tDH tDS Valid Data-in DQ0 -15 tDH tDS Valid Data-in tDH tDS Valid Data-in tDH Valid Data-in (Clock Mask) CLK tCKH tCKS tCKH tDH tDS tDH tCKS CKE tDS DQ0 -15 Valid Data-in tDS Valid Data-in tDH tDS Valid Data-in tDH Valid Data-in Output Data (Output Enable) CLK tCMS tCMH tCMH tCMS DQM tAC tHZ tAC tOH tOH tOH Valid Data-Out DQ0 -15 Valid Data-Out tAC tLZ tAC tOH Valid Data-Out OPEN (Clock Mask) CLK tCKH tCKS tCKH tCKS CKE tAC tOH DQ0 -15 tAC tAC tOH tOH Valid Data-Out Valid Data-Out - 17 - tAC tOH Valid Data-Out Publication Release Date: February 2001 Revision A2 W982516AH Timing Waveforms, continued Mode Register Set Cycle tRSC CLK tCMS tCMH tCMS tCMH tCMS tCMH tCMS tCMH CS RAS CAS WE tAS A0-A12 BS0,1 tAH Register set data A0 A1 Burst Length A2 A3 Addressing Mode A4 A5 CAS Latency A2 0 0 0 0 1 1 1 1 A6 A7 A0 "0" (Test Mode) A8 "0" Reserved A9 A0 WriteA0 Mode A10 "0" A11 A0 "0" A12 "0" BS0 A0 "0" BS1 A0 "0" A6 0 0 0 0 1 A0 Reserved A0 A1 A0 A0 0 A0 0 A0 1 A0 1 A0 0 A0 0 A0 1 A0 1 A0 A3 A0 0 A0 1 A5 A0 A0 0 A0 0 A0 1 A0 1 A0 0 A0 A9 A0 0 A0 1 - 18 - A0 0 1 0 1 0 1 0 1 next command BurstA0 Length Sequential A0 Interleave A0 1 A0 1 A0 2 A0 2 A0 4 A0 4 A0 8 A0 8 Reserved A0 A0 Reserved FullA0 Page A0 Mode Addressing Sequential A0 Interleave A0 A4 0 1 0 1 0 CAS A0 Latency Reserved A0 Reserved A0 2 A0 3 Reserved Single Write Mode Burst read and A0 Burst write Burst read and A0 single write W982516AH OPERATING TIMING EXAMPLE Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) (CLK = 100 MHz) 1 0 2 3 4 6 5 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC tRC tRC tRC RAS tRAS tRP tRAS tRAS tRP tRP tRAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9, A11,12 RAa tRCD tRCD RBb CBx RBb CAw tRCD RAc RBd RAc CAy RAe RBd CBz RAe DQM CKE aw0 tRRD Bank #0 Active Bank #1 tAC tAC tAC DQ aw1 aw2 aw3 bx0 Precharge Active bx3 bx2 Active cy1 cy2 cy3 tRRD Precharge Read Precharge Read tAC cy0 tRRD tRRD Read bx1 Active Active Read Bank #2 Idle Bank #3 - 19 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge) (CLK = 100 MHz) 0 1 2 3 4 6 5 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC tRC tRC tRC RAS tRAS tRP tRAS tRAS tRP tRP tRAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9, A11,12 RAa tRCD tRCD RBb CAw tRCD CBx RBb RAe RBd RAc CAy RAc CBz RBd RAe DQM CKE tAC DQ tRRD Active Bank #0 Bank #1 aw1 aw2 aw3 bx0 Active AP* Active bx1 bx2 bx3 tAC cy0 cy1 tRRD tRRD Read tAC tAC aw0 Read Bank #2 Idle Bank #3 * AP is the internal precharge start timing - 20 - cy3 dz0 tRRD Read AP* cy2 AP* Active Active Read W982516AH Operating Timing Example, continued Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC tRC tRC RAS tRAS tRP tRAS tRP tRAS tRP CAS WE BS0 BS1 tRCD A10 RAa A0-A9, A11,12 RAa tRCD tRCD RAc RBb CAx RBb CBy RAc CAz DQM CKE tAC DQ tAC ax0 ax1 tRRD Bank #0 Active ax3 ax4 ax5 ax6 by0 by1 by4 by5 by6 by7 CZ0 tRRD Read Precharge Bank #1 ax2 tAC Precharge Active Read Active Read Precharge Bank #2 Idle Bank #3 - 21 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Autoprecharge) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 CLK tRC CS tRC RAS tRAS tRP tRAS tRAS tRP CAS WE BS0 BS1 tRCD tRCD tRCD A10 A0-A9, A11,12 RAa RAc RBb RAa CAx RBb RAc CBy CAz DQM CKE tCAC tCAC DQ ax0 ax1 ax2 tRRD Bank #0 Active ax3 ax4 ax5 ax7 by0 by1 AP* Read Active Read Bank #2 Idle Bank #3 by4 by5 tRRD Active Bank #1 ax6 tCAC * AP is the internal precharge start timing - 22 - Read AP* by6 CZ0 23 W982516AH Operating Timing Example, continued Interleaved Bank Write (Burst Length = 8) (CLK = 100 MHz) 1 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC RAS tRAS tRAS tRP tRP tRAS CAS tRCD tRCD tRCD WE BS0 BS1 A10 RAa A0-A9, A11,12 RAa RBb CAx RAc RBb CBy RAc CAz DQM CKE DQ ax0 ax1 ax4 ax5 ax6 ax7 by0 by1 tRRD Bank #0 Active by3 by4 by5 by6 by7 CZ0 CZ1 CZ2 tRRD Precharge Write Active Bank #1 by2 Write Active Write Precharge Bank #2 Bank #3 Idle - 23 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued Interleaved Bank Write (Burst Length = 8, Autoprecharge) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC RAS tRP tRAS tRAS tRAS tRP CAS WE BS0 BS1 tRCD tRCD A10 RAa A0-A9, A11,12 RAa tRCD RBb CAx RAb CBy RBb CAz RAc DQM CKE ax0 DQ ax1 ax4 ax5 ax6 ax7 by0 by1 tRRD Bank #0 Active by3 AP* Write Write Bank #2 Idle Bank #3 by4 by5 by6 by7 CZ0 tRRD Active Bank #1 by2 * AP is the internal precharge start timing - 24 - Active Write AP* CZ1 CZ2 W982516AH Operating Timing Example, continued Page Mode Read (Burst Length = 4, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK tCCD tCCD tCCD CS tRAS tRP tRAS tRP RAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9, A11,12 RAa tRCD RBb RBb CAI CBx CAy CAm CBz DQM CKE tAC DQ tAC tAC a0 a1 a2 a3 bx0 Ay0 bx1 tAC Ay1 Ay2 tAC am0 am1 am2 bz0 bz1 bz2 bz3 tRRD Bank #0 Active Read Active Bank #1 Read Read Read Precharge Read AP* Bank #2 Idle Bank #3 * AP is the internal precharge start timing - 25 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 CLK CS tRAS tRP RAS CAS WE BS0 BS1 tRCD A10 RAa A0-A9, A11,12 RAa CAx CAy DQM CKE tAC DQ tWR ax0 Q Q Bank #0 Active ax1 ax3 ax2 Q Q ax5 ax4 Q Q Read Bank #3 D D Write Bank #1 Bank #2 ay1 ay0 Idle - 26 - ay2 D ay4 ay3 D D Precharge 22 23 W982516AH Operating Timing Example, continued Auto Precharge Read (Burst Length = 4, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRC tRC RAS tRAS tRP tRAS tRP CAS WE BS0 BS1 tRCD A10 RAa A0-A9, A11,12 RAa tRCD RAb CAw RAb CAx DQM CKE tAC DQ Bank #0 tAC aw0 Active Read aw1 AP* aw2 bx0 aw3 Active Read bx1 bx2 bx3 AP* Bank #1 Bank #2 Idle Bank #3 * AP is the internal precharge start timing - 27 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued Auto Precharge Write (Burst Length = 4) (CLK = 100 MHz) CLK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 CS tRC tRC RAS tRAS tRP tRAS tRP CAS WE BS0 BS1 tRCD tRCD A10 RAa A0-A9, A11,12 RAa RAc RAb CAw RAb CAx RAc DQM CKE DQ Bank #0 aw0 Active aw1 Write aw2 bx0 aw3 AP* Active Write Bank #1 Bank #2 Idle Bank #3 * AP is the internal precharge start timing - 28 - bx1 bx2 bx3 AP* Active 23 W982516AH Operating Timing Example, continued Auto Refresh Cycle (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK tRP tRC tRC CS RAS CAS WE BS0,1 A10 A0-A9, A11,12 DQM CKE DQ All Banks Prechage Auto Refresh Auto Refresh (Arbitrary Cycle) - 29 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued Self Refresh Cycle (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS tRP RAS CAS WE BS0,1 A10 A0-A9, A11,12 DQM tCKS tCKS tSB CKE tCKS DQ tRC Self Refresh Cycle All Banks Precharge Self Refresh Entry No Operation Cycle Arbitrary Cycle - 30 - W982516AH Operating Timing Example, continued Burst Read and Single Write (Burst Length = 4, CAS Latency = 3) (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 CLK CS RAS CAS tRCD WE BS0 BS1 A10 RBa A0-A9, A11,12 RBa CBv CBw CBx CBy CBz DQM CKE tAC DQ tAC av0 Q Bank #0 Active Bank #1 Bank #2 Bank #3 av1 Q av2 av3 aw0 ax0 ay0 az0 az1 az2 az3 Q Q D D D Q Q Q Q Read Single Write Read Idle - 31 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued PowerDown Mode (CLK = 100 MHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 CLK CS RAS CAS WE BS A10 RAa A0-A9 A11,12 RAa RAa CAa RAa DQM tSB tSB CKE tCKS tCKS tCKS DQ ax0 Active ax1 ax2 NOP Read tCKS ax3 Precharge NOPActive Precharge Standby Power Down mode Active Standby Power Down mode Note: The PowerDown Mode is entered by asserting CKE "low". All Input/Output buffers (except CKE buffers) are turned off in the PowerDown mode. When CKE goes high, command input must be No operation at next CLK rising edge. - 32 - CAx 23 W982516AH Operating Timing Example, continued Autoprecharge Timing (Read Cycle) 0 1 Read AP 2 3 4 5 6 7 8 9 10 11 (1) CAS Latency=2 ( a ) burst length = 1 Command DQ Act tRP Q0 ( b ) burst length = 2 Command Read AP Act tRP DQ Q0 Q1 ( c ) burst length = 4 Command Read AP Act tRP DQ Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3 ( d ) burst length = 8 Command Read AP DQ Q4 Q5 Q6 Act tRP Q7 (2) CAS Latency=3 ( a ) burst length = 1 Command Read AP Act tRP Q0 DQ ( b ) burst length = 2 Command Read AP Act tRP Q0 DQ ( c ) burst length = 4 Command Read Q1 AP Act tRP Q0 DQ Q1 Q2 Q3 ( d ) burst length = 8 Command Read AP Act tRP Q0 DQ Q1 Q2 Q3 Q4 Q5 Q6 Q7 Note ) Read represents the Read with Auto precharge command. AP represents the start of internal precharging. Act represents the Bank Activate command. When the Auto precharge command is asserted, the period from Bank Activate command to the start of internal precgarging must be at least t RAS(min). - 33 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued Autoprecharge Timing (Write Cycle) 0 1 2 3 4 5 6 7 8 9 10 11 (1) CAS Latency=2 ( a ) burst length = 1 Command Write AP Act tWR DQ tRP D0 ( b ) burst length = 2 Command Write AP Act tWR DQ D0 tRP D1 ( c ) burst length = 4 Command Write AP Act tWR DQ D0 D1 D2 tRP D3 ( d ) burst length = 8 Command Write AP tWR DQ D0 D1 D2 D3 D4 D5 D6 Act tRP D7 (2) CAS Latency=3 ( a ) burst length = 1 Command Write AP Act tWR DQ ( b ) burst length = 2 Command tRP D0 Write AP Act tWR DQ D0 tRP D1 ( c ) burst length = 4 Command Write AP Act tWR DQ D0 D1 D2 tRP D3 ( d ) burst length = 8 Command Write AP tWR DQ D0 D1 D2 D3 D4 D5 D6 D7 Note ) represents the Write with Auto precharge command. represents the start of internal AP precharging. represents the Bank Activate Act command. When the Auto precharge command is asserted, the period from Bank Activate command to the start of internal precgarging must be at least tRAS (min). Write - 34 - Act tRP W982516AH Operating Timing Example, continued Timing Chart of Read to Write Cycle In the case of Burst Length = 4 (1) CAS Latency=2 0 1 2 3 4 5 D1 D2 D3 D0 D1 D2 D1 D2 D3 D1 D2 6 7 8 9 10 11 9 10 11 Read Write ( a ) Command DQM DQ D0 Read ( b ) Command Write DQM DQ D3 (2) CAS Latency=3 Read Write ( a ) Command DQM D0 DQ Read ( b ) Command Write DQM D0 DQ D3 Note: The Output data must be masked by DQM to avoid I/O conflict Timing Chart of Write to Read Cycle In the case of Burst Length=4 0 1 2 3 4 5 6 7 8 Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3 Q0 Q1 Q2 Q3 Q0 Q1 Q2 (1) CAS Latency=2 ( a ) Command Write Read DQM DQ ( b ) Command D0 Read Write DQM DQ D0 D1 (2) CAS Latency=3 ( a ) Command Write Read DQM DQ ( b ) Command D0 Write Read DQM DQ D0 D1 - 35 - Q3 Publication Release Date: February 2001 Revision A2 W982516AH Timing Chart of Burst Stop Cycle (Burst Stop Command) 0 1 2 3 4 5 6 7 8 9 10 11 10 11 (1) Read cycle ( a ) CAS latency =2 Read Command BST Q0 DQ Q1 Q2 Q3 Q4 ( b )CAS latency = 3 Read Command BST Q0 DQ Q1 Q2 Q3 Q4 (2) Write cycle Write Command Q0 DQ BST Q1 Q2 Note: Q3 Q4 BST represents the Burst stop command Timing Chart of Burst Stop Cycle (Precharge Command) In the case of Burst Lenght = 8 0 1 2 3 4 5 6 7 (1) Read cycle ( a )CAS latency =2 Command Read PRCG Q0 DQ ( b )CAS latency = 3 Command Q1 Q2 Q3 Read PRCG Q0 DQ DQ Q1 Q2 (2) Write cycle ( a ) CAS latency =2 PRCG Write tWR Command DQM DQ ( b )CAS latency = 3 D0 D1 D2 D3 D4 Write PRCG tWR Command DQM DQ D0 Q4 D1 D2 D3 D4 - 36 - Q3 Q4 8 9 W982516AH Operating Timing Example, continued CKE/DQM Input Timing (Write Cycle) CLK cycle No. 1 2 3 D1 D2 D3 4 5 6 7 External CLK Internal CKE DQM DQ D5 DQM MASK D6 CKE MASK (1) CLK cycle No. 1 2 3 D1 D2 D3 4 5 6 7 External CLK Internal CKE DQM DQ D5 DQM MASK D6 CKE MASK (2) CLK cycle No. 1 2 3 D1 D2 D3 4 5 6 7 External CLK Internal CKE DQM DQ D4 D5 D6 CKE MASK (3) - 37 - Publication Release Date: February 2001 Revision A2 W982516AH Operating Timing Example, continued CKE/DQM Input Timing (Read Cycle) CLK cycle No. 1 2 3 4 Q 1 Q 2 Q 3 Q 4 5 6 7 External CLK Internal CKE DQM DQ Open Open Q 6 (1) CLK cycle No. 1 2 3 Q 1 Q 2 Q 3 4 5 6 7 External CLK Internal CKE DQM DQ Q 4 Open Q 6 (2) CLK cycle No. 1 2 Q 1 Q 2 3 4 5 6 7 External CLK Internal CKE DQM DQ Q 3 Q 4 (3) - 38 - Q 5 Q 6 W982516AH Operating Timing Example, continued Self Refresh/Power Down Mode Exit Timing Asynchronous Control Input Buffer turn on time ( Power down mode exit time ) is specified by tCKS(min) + tCK(min) A ) tCK < tCKS(min)+tCK(min) tCK CLK CKE tCKS(min)+tCK(min) NOP Command Command Input Buffer Enable B) tCK >= tCKS(min) + tCK (min) tCK CLK tCKS(min)+tCK(min) CKE Command Command Input Buffer Enable Note ) All Input Buffer(Include CLK Buffer) are turned off in the Power Down mode and Self Refresh mode NOP Command Represents the No-Operation command Represents one command - 39 - Publication Release Date: February 2001 Revision A2 W982516AH PACKAGE DIMENSION 54L TSOP (II)-400 mil 54 28 HE E 1 27 e b C D L A2 ZD A1 Y SEATING PLANE Controlling Dimension: Millimeters DIMENSION (MM) SYM. MIN. NOM. A A1 A2 b 0.05 0.10 DIMENSION (INCH) MAX. 1.20 0.15 MIN. 0.002 1.00 0.24 c 0.32 NOM. 0.004 MAX. 0.047 0.006 0.039 0.40 0.009 0.15 0.012 0.006 0.016 D 22.12 22.22 22.62 0.871 0.875 0.905 E 10.06 10.16 10.26 0.396 0.400 0.404 HE e 11.56 11.76 11.96 0.455 0.463 0.471 L 0.40 L1 0.80 0.50 0.60 0.016 0.80 0.020 0.024 0.032 0.004 0.10 Y ZD 0.0315 0.028 0.71 - 40 - A L1 W982516AH Headquarters Winbond Electronics (H.K.) Ltd. Unit 9-15, 22F, Millennium City, No. 4, Creation Rd. III, No. 378 Kwun Tong Rd; Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006 Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab. 2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798 Taipei Office 11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502 Note: All data and specifications are subject to change withou t notice. - 41 - Publication Release Date: February 2001 Revision A2