© 2003 IXYS All rights reserved
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.5 V
tfi typ = 35 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC= 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES TJ = 25°C50µA
VGE = 0 V TJ = 150°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= 50 A, VGE = 15 V TJ = 25°C 2.1 2.5 V
TJ = 125°C 1.8 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C60A
ICM TC= 25°C, 1 ms 300 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
(RBSOA) Clamped inductive load @ ≤ 600V
PCTC= 25°C 480 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque (TO-247) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
DS99043A(09/03)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
zVery high frequency IGBT
zSquare RBSOA
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
Applications
zPFC circuits
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zAC motor speed control
zDC servo and robot drives
zDC choppers
Advantages
zHigh power density
zVery fast switching speeds for high
frequency applications
HiPerFASTTM IGBT IXGH 60N60C2
IXGT 60N60C2
Advance Technical Data
TO-268
(IXGT)
C (TAB)
C (TAB)
GCE
TO-247 AD
(IXGH)
E
G
C2-Class High Speed IGBTs
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 60N60C2
IXGT 60N60C2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 50 A; VCE = 10 V, 40 58 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 3900 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 280 pF
Cres 97 pF
Qg146 nC
Qge IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 nC
Qgc 50 nC
td(on) 18 ns
tri 25 ns
td(off) 95 150 ns
tfi 35 ns
Eoff 0.48 0.8 mJ
td(on) 18 ns
tri 25 ns
Eon 0.45 mJ
td(off) 130 ns
tfi 80 ns
Eoff 1.2 mJ
RthJC 0.26 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2 Ω
Inductive load, TJ = 125°°
°°
°C
IC = 50 A, VGE = 15 V
VCE = 400 V, RG = Roff = 2 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
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© 2003 IXYS All rights reserved
IXGH 60N60C2
IXGT 60N60C2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
25
50
75
10 0
12 5
15 0
17 5
200
11.5 22.533.544.5
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
1 3V
1 1V 9V
5V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
10
20
30
40
50
60
70
80
90
10 0
0.511.522.533.5
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
1 3V
1 1V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
10
20
30
40
50
60
70
80
90
10 0
0.511.522.533.5
V
CE
- Volts
I
C
- Amperes
V
G E
= 1 5V
1 3V
1 1V
7V
5V
9V
Fig. 6. Input Admittance
0
25
50
75
10 0
12 5
15 0
17 5
200
3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
V
GE
- Volts
I
C
- Amperes
T
J
= 1 25
º
C
25
º
C
-40
º
C
Fig. 4. Temperature Dependence of V
CE(sat)
0.5
0.6
0.7
0.8
0.9
1
1. 1
1. 2
25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (sat)
- Normalize
d
I
C
= 1 00A
I
C
= 50A
I
C
= 25A
V
G E
= 1 5V
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
1
1. 5
2
2.5
3
3.5
4
4.5
5
5 6 7 8 9101112131415
V
GE
- Volts
V
CE
- Volts
T
J
= 25
º
C
I
C
= 1 00A
50A
25A
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 60N60C2
IXGT 60N60C2
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Fig. 12. Capacitance
10
10 0
10 0 0
10 0 0 0
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - pF
Cies
Coes
Cres
f = 1 MHz
Fig. 11. Gate Charge
0
3
6
9
12
15
0 20406080100120140160
Q
G
- nanoCoulombs
V
G E
- Volts
V
C E
= 300V
I
C
= 50A
I
G
= 1 0mA
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
10 0
0 255075100125150175200
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
1 25
º
C
Fig. 8. Dependence of E
off
on R
G
0
1
2
3
4
5
6
246810121416
R
G
- Ohms
E
off
- milliJoules
I
C
= 75A
I
C
= 25A
T
J
= 1 25ºC
V
GE
= 1 5V
V
CE
= 400V
I
C
= 50A
I
C
= 1 00A
Fig. 9. Dependence of E
off
on I
C
0
1
2
3
4
5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
R
G
= 2 Ohm s
R
G
= 1 0 Ohms - - - - -
T
J
= 1 25
º
C
V
G E
= 1 5V
V
C E
= 400V
T
J
= 25
º
C
Fig. 10. Dependence of E
off
on Temperature
0
1
2
3
4
5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- milliJoules
I
C
= 1 00A
I
C
= 50A
I
C
= 25A
V
G E
= 1 5V
V
C E
= 400V
R
G
= 2 Ohm s
R
G
= 1 0 Ohms - - - - -
I
C
= 75A
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© 2003 IXYS All rights reserved
IXGH 60N60C2
IXGT 60N60C2
Fig. 13. Maximum Transient Thermal Resistance
0.05
0.1
0.15
0.2
0.25
0.3
1 10 100 1000
Puls e W idth - millis ec onds
R (th) J C - (ºC/W)
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