SUP60030E
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S15-1869-Rev. A, 10-Aug-15 1Document Number: 68293
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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N-Channel 80 V (D-S) MOSFET
Ordering Information:
SUP60030E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• Maximum 175 °C junction temperature
• Very low Qgd reduces power loss from passing
through Vplateau
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
•DC/DC converter
• Power tools
• Motor drive switch
• DC/AC inverter
• Battery management
Notes
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) MAX. ID (A) dQg (TYP.)
80 0.0034 at VGS = 10 V 120 94
0.0036 at VGS = 7.5 V 120
TO-220AB
Top View
S
S
D
G
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 80 V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID
120 d
A
TC = 70 °C 120 d
Pulsed Drain Current (t = 100 μs) IDM 250
Avalanche Current IAS 70
Single Avalanche Energy aL = 0.1 mH EAS 245 mJ
Maximum Power Dissipation aTC = 25 °C PD
375 b
W
TC = 125 °C 125 b
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient (PCB Mount) cRthJA 40 °C/W
Junction-to-Case (Drain) RthJC 0.4
SUP60030E
www.vishay.com Vishay Siliconix
S15-1869-Rev. A, 10-Aug-15 2Document Number: 68293
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 80 - - V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2 - 4
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 nA
Zero Gate Voltage Drain Current IDSS
VDS = 80 V, VGS = 0 V - - 1 μA
VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 150
VDS = 80 V, VGS = 0 V, TJ = 175 °C - - 5 mA
On-State Drain Current aID(on) V
DS ≥ 10 V, VGS = 10 V 120 - - A
Drain-Source On-State Resistance aRDS(on)
VGS = 10 V, ID = 30 A - 0.0028 0.0034
Ω
VGS = 7.5 V, ID = 20 A - 0.0030 0.0036
Forward Transconductance agfs VDS = 15 V, ID = 30 A - 82 - S
Dynamic b
Input Capacitance Ciss
VGS = 0 V, VDS = 40 V, f = 1 MHz
- 7910 -
pFOutput Capacitance Coss - 3250 -
Reverse Transfer Capacitance Crss - 348 -
Total Gate Charge cQg
VDS = 40 V, VGS = 10 V, ID = 20 A
-94141
nCGate-Source Charge cQgs -31-
Gate-Drain Charge cQgd -10-
Gate Resistance Rgf = 1 MHz 0.28 1.4 2.8 Ω
Turn-On Delay Time ctd(on)
VDD = 40 V, RL = 4 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
-2440
ns
Rise Time ctr-2440
Turn-Off Delay Time ctd(off) -3460
Fall Time ctf-1428
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current (t = 100 μs) ISM --250A
Forward Voltage aVSD IF = 10 A, VGS = 0 V - 0.8 1.5 V
Reverse Recovery Time trr
IF = 34 A, di/dt = 100 A/μs
- 126 190 ns
Peak Reverse Recovery Charge IRM(REC) -510A
Reverse Recovery Charge Qrr - 0.315 0.475 μC
SUP60030E
www.vishay.com Vishay Siliconix
S15-1869-Rev. A, 10-Aug-15 3Document Number: 68293
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
50
100
150
200
250
01234
ID- Drain Current (A)
VDS-Drain-to-Source Voltage (V)
VGS = 10 V thru 6 V
VGS = 5 V
VGS = 4 V
0
30
60
90
120
0 6 12 18 24 30
gfs-Transconductance (S)
ID - Drain Current (A)
TC= 25 °C
TC= 125 °C
TC= - 55 °C
0
2200
4400
6600
8800
11000
0 20406080
C - Capacitance (pF)
VDS- Drain-to-Source Voltage (V)
Ciss
Coss
Crss
0
20
40
60
80
100
02468
ID- Drain Current (A)
VGS -Gate-to-Source Voltage (V)
TC= 25 °C
TC= 125 °C
TC= - 55 °C
0.0010
0.0015
0.0020
0.0025
0.0030
0.0035
0.0040
0 20406080100
RDS(on) -On-Resistance (Ω)
ID- Drain Current (A)
VGS =7.5 V
VGS = 10 V
0
2
4
6
8
10
0 20406080100
VGS -Gate-to-Source Voltage (V)
Qg- Total Gate Charge (nC)
VDS= 64 V
VDS= 20 V
VDS= 40 V
ID= 20 A
SUP60030E
www.vishay.com Vishay Siliconix
S15-1869-Rev. A, 10-Aug-15 4Document Number: 68293
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Source Drain Diode Forward Voltage
Threshold Voltage
Current De-rating
0.70
0.95
1.20
1.45
1.70
1.95
- 50 - 25 0 25 50 75 100 125 150 175
RDS(on) -On-Resistance (Normalized)
TJ- Junction Temperature (°C)
VGS = 10 V, ID =30 A
VGS = 7.5 V
ID =30 A
0
0.002
0.004
0.006
0.008
0.010
3 4.5 6 7.5 9
RDS(on) -On-Re
sistance (Ω)
VGS -Gate -to - Source Voltage (V)
TJ= 125 °C
TJ= 25 °C
ID= 30 A
85
88
91
94
97
100
- 50 - 25 0 25 50 75 100 125 150 175
VDS(V) Drain -to-Source Voltage
TJ- Temperature (°C)
ID= 250 μA
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
IS-Source Current (A)
V
SD
-Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0
50
100
150
200
250
300
0 255075100125150175
ID- Drain Current (A)
TC-Case Temperature (°C)
SUP60030E
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S15-1869-Rev. A, 10-Aug-15 5Document Number: 68293
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Single Pulse Avalanche Current Capability vs. Time Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
0.000001 0.00001 0.0001 0.001 0.01
IDAV (A)
Time (s)
150 °C
25 °C
0.01
0.1
1
10
100
1000
0.1 1 10 100
ID - Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R
DS(on)
*
100 μs
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
1 ms
100 ms
DC
10 ms
I
D
Limited
10 μs
10-4 10-3 10-2 10-1 1 10 100 1000
1
0.01
0.001
0.1
0.0001
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
SUP60030E
www.vishay.com Vishay Siliconix
S15-1869-Rev. A, 10-Aug-15 6Document Number: 68293
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68293.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1 1
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
0.05
0.02
Single Pulse
10
Package Information
www.vishay.com Vishay Siliconix
Revison: 16-Jun-14 1Document Number: 71195
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-220AB
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
M
*
3
2
1
L
L(1)
D
H(1)
Q
Ø P
A
F
J(1)
b(1)
e(1)
e
E
b
C
D2
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183
b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
c 0.36 0.61 0.014 0.024
D 14.85 15.49 0.585 0.610
D2 12.19 12.70 0.480 0.500
E 10.04 10.51 0.395 0.414
e 2.41 2.67 0.095 0.105
e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.09 6.48 0.240 0.255
J(1) 2.41 2.92 0.095 0.115
L 13.35 14.02 0.526 0.552
L(1) 3.32 3.82 0.131 0.150
Ø P 3.54 3.94 0.139 0.155
Q 2.60 3.00 0.102 0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
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Revision: 01-Jan-2021 1Document Number: 91000
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