Major Ratings and Characteristics
IF(AV) Rectangular 120 A
waveform
VRRM 100 V
IFSM @ tp = 5 μs sine 12800 A
VF@
120Apk, TJ=125°C 0.73 V
TJrange - 55 to 175 °C
Characteristics Values Units
SCHOTTKY RECTIFIER
123NQ100PbF
120Amp
1
Bulletin PD-21144 rev. A 10/06
www.irf.com
Case Styles
HALF-PAK (D-67)
The 123NQ.. high current Schottky rectifier module series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are in
high current switching power supplies, plating power supplies,
UPS systems, converters, free-wheeling diodes, welding, and
reverse battery protection.
175 °C TJ operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free
Description/ Features
123NQ100PbF
2
Bulletin PD-21144 rev. A 10/06
www.irf.com
IF(AV) Max. Average Forward Current 120 A 50% duty cycle @ TC = 133 °C, rectangular wave form
* See Fig. 5
IFSM Max. Peak One Cycle Non-Repetitive 12800 5μs Sine or 3μs Rect. pulse
Surge Current * See Fig. 7 1800 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 15 mJ TJ = 25 °C, IAS
= 5.5 Amps, L = 1 mH
IAR Repetitive Avalanche Current 1 A Current decaying linearly to zero in 1 μsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Part number 123NQ100PbF
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Absolute Maximum Ratings
Following any rated
load condition and with
rated VRRM
applied
Parameters 123NQ Units Conditions
A
(1) Pulse Width 500μs
VFM Max. Forward Voltage Drop 0.91 V @ 120A
* See Fig. 1 (1) 1.26 V @ 240A
0.73 V @ 120A
0.9 V @ 240A
IRM Max. Reverse Leakage Current 3 mA TJ = 25 °C
* See Fig. 2 40 mA TJ = 125 °C
CTMax. Junction Capacitance 2650 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance 7.0 nH From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change 10000 V/ μs
(Rated VR)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Parameters 123NQ Units Conditions
Electrical Specifications
TJMax. Junction Temperature Range -55 to 175 °C
Tstg Max. Storage Temperature Range -55 to 175 °C
RthJC Max. Thermal Resistance Junction 0.38 °C/W DC operation * See Fig. 4
to Case
RthCS Typical Thermal Resistance, Case to 0.05 °C/W Mounting surface , smooth and greased
Heatsink
wt Approximate Weight 30 (1.06) g (oz.)
T Mounting Torque Min. 3 (26.5) Non-lubricated threads
Max. 4 (35.4)
Terminal Torque Min. 3.4 (30)
Max. 5 (44.2)
Case Style HALF PAK Module
Thermal-Mechanical Specifications
Parameters 123NQ Units Conditions
Nm
(Ibf-in)
100
123NQ100PbF
3
Bulletin PD-21144 rev. A 10/06
www.irf.com
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I F (A)
Reverse Current - I R (mA)
Reverse Voltage - V R (V)
Reverse Voltage - V R (V)
Junction Capacitance - C T (pF)
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z thJC (°C/W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.20
D = 0.75
D = 0.50
D = 0.33
D = 0.25
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
0.001
0.01
0.1
1
10
100
1000
0 20406080100
150°C
125°C
100°C
75°C
50°C
25°C
T = 175°C
J
100
1000
10000
0 102030405060708090100110
T = 2 5° C
J
0.0 0.5 1.0 1.5 2.0
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 175°C
123NQ100PbF
4
Bulletin PD-21144 rev. A 10/06
www.irf.com
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
FREE-WHEEL
DIODE
40HFL40S02
CURRENT
MONITOR
HIGH-SPEED
SWI TCH
IRFP460
L
DUT
Rg = 25 o hm
Vd = 25 V olt
+
Average Forward Current - I F (AV)
(A)
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
Allowable Case Temperature (°C)
Non-Repetitive Surge Current - I FSM (A)
Fig. 6 - Forward Power Loss Characteristics
Average Forward Current - I F (AV) (A)
Average Power Loss (Watts)
Fig. 8 - Unclamped Inductive Test Circuit
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
0 20 40 60 80 100 120 140 160 180
0
20
40
60
80
100
120 D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit DC
030 60 90 120 150 180
100
110
120
130
140
150
160
170
180
DC
Square wave ( D= 0.50)
80% rated Vr applied
see note (2)
10 100 1000 10000
100
1000
10000
100000
123NQ100PbF
5
Bulletin PD-21144 rev. A 10/06
www.irf.com
HALF-PAK (D-67)
Dimensions in millimeters and (inches)
Outline Table
Ordering Information Table
Device Code
15
24
3
1- Average Current Rating (x 10)
2- Product Silicon Identification
3- N = Not Isolated
4- Q = Schottky Rectifier Diode
5- Voltage Rating (100 = 100V)
6- Lead-Free
12 3 N Q 100 PbF
6
123NQ100PbF
6
Bulletin PD-21144 rev. A 10/06
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
