MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE CM200RL-12NF IC ................................................................... 200A VCES ............................................................ 600V Insulated Type 7-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 135 (6.05) (6.05) 110 0.5 17.5 10.5 26 26 11.7 10.5 18.7 V W B (6.05) U 18 (13) 10.5 10.5 CN 25 110 20 (6.05) 10.5 (13) 11 6-M5 NUTS 4 LABEL +1 25 UP 13 30.5 46.3 VP 24.1-0.5 WP 1 (SCREWING DEPTH) 13.75 26.5 4-5.5 MOUNTING HOLES 1 16.5 P 48.75 B 1 78 0.5 20 10.5 A 8 N 1 Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B P UP-1 UP-2 B CN-7 CN-8 VP-1 VP-2 V U CN-5 CN-6 WP-1 WP-2 CN-3 CN-4 W CN-1 CN-2 N CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25C, unless otherwise specified) INVERTER PART Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Conditions G-E Short C-E Short DC, TC = 88C*1 Pulse (Note 2) Pulse TC = 25C (Note 2) Ratings 600 20 200 400 200 400 890 Unit V V A A A A W Ratings 600 20 100 200 540 600 100 Unit Ratings -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 Unit BRAKE PART Symbol VCES VGES IC ICM PC (Note 3) VRRM IFM Parameter Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current Conditions G-E Short C-E Short DC, TC = 99C*1 Pulse TC = 25C Clamp diode part Clamp diode part (Note 2) V V A A W V A (COMMON RATING) Symbol Tj Tstg Viso -- -- -- Parameter Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value C C Vrms N*m N*m g Feb. 2009 2 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) INVERTER PART Test conditions Parameter Symbol Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 6 7 8 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 3.1 -- 1.7 1.7 -- -- -- 800 -- -- -- -- -- 4.8 -- -- -- 0.051 -- 0.5 2.2 -- 30 3.7 1.2 -- 120 100 300 300 150 -- 2.8 0.14 0.22 A Min. -- Limits Typ. -- Max. 1 6 7 8 V -- -- -- -- -- -- -- -- -- -- 6.3 -- 1.7 1.7 -- -- -- 400 -- -- -- -- 0.5 2.2 -- 15 1.9 0.6 -- 2.8 0.23 0.41 63 A VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance Contact thermal resistance Tj = 25C Tj = 125C IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = 15V RG = 3.1, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 External gate resistance -- 31 mA V nF nF nF nC ns ns ns ns ns C V K/W K/W K/W BRAKE PART Symbol Test conditions Parameter ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) Gate-emitter threshold voltage IC = 10mA IGES Gate leakage current VGE = VGES, VCE = 0V VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance Tj = 25C Tj = 125C IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 100A, VGE = 15V IF = 100A IGBT part*1 Clamp diode part*1 External gate resistance Unit mA V nF nF nF nC V K/W K/W *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Feb. 2009 3 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 13 12 200 11 100 10 8 0 2 4 6 9 8 4 VGE = 15V 3 2 1 Tj = 25C Tj = 125C 0 10 0 100 200 300 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 103 Tj = 25C EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25C 15 300 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V 8 6 4 IC = 200A IC = 400A 2 7 5 3 2 102 7 5 3 2 Tj = 25C Tj = 125C IC = 60A 0 6 8 10 12 14 16 18 101 20 2 3 4 5 CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 7 5 3 2 Cies 101 Coes 100 7 5 3 2 1 EMITTER-COLLECTOR VOLTAGE VEC (V) 102 7 5 3 2 0 GATE-EMITTER VOLTAGE VGE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 400 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 102 td(on) tr 7 5 3 2 Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 125C Inductive load 101 7 5 3 2 100 1 10 COLLECTOR-EMITTER VOLTAGE VCE (V) tf td(off) 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Feb. 2009 4 MITSUBISHI IGBT MODULES CM200RL-12NF 3 2 Irr trr 102 7 5 Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 25C Inductive load 3 2 2 3 5 7 102 2 3 5 7 103 2 10-1 7 5 3 2 IGBT part: 10-2 Per unit base = 7 5 Rth(j-c) = 0.14K/W FWDi part: 3 Per unit base = 2 Rth(j-c) = 0.22K/W -3 10 10-2 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) 102 Esw(off) 7 Esw(on) 3 2 100 Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 125C Inductive load C snubber at bus 7 5 3 2 2 3 5 7 102 2 3 5 3 2 101 Conditions: VCC = 300V VGE = 15V IC = 200A Tj = 125C Inductive load C snubber at bus Esw(off) 5 3 2 100 0 10 5 7 103 Esw(on) 7 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) GATE RESISTANCE RG () RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) 101 101 7 7 5 3 Err 2 100 Conditions: VCC = 300V VGE = 15V RG = 3.1 Tj = 125C Inductive load C snubber at bus 7 5 3 2 10-1 1 10 10-1 7 5 3 2 TIME (s) 5 10-1 1 10 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 Single Pulse, 7 5 TC = 25C 3 Under the chip EMITTER CURRENT IE (A) SWITCHING LOSS (mJ/pulse) 101 1 10 7 SWITCHING LOSS (mJ/pulse) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (ratio) 7 5 101 RECOVERY LOSS (mJ/pulse) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 RECOVERY LOSS (mJ/pulse) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 2 3 5 7 102 2 3 5 3 100 7 5 3 2 10-1 0 10 5 7 103 EMITTER CURRENT IE (A) Err 2 Conditions: VCC = 300V VGE = 15V IE = 200A Tj = 125C Inductive load C snubber at bus 2 3 5 7 101 2 3 5 7 102 GATE RESISTANCE RG () Feb. 2009 5 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A VCC = 200V 15 VCC = 300V 10 5 0 0 200 400 600 800 1000 1200 GATE CHARGE QG (nC) Feb. 2009 6