SFH 3410
NPN-Si-Fototransistor mit Vλ Charakteristik
Silicon NPN Phototransistor with Vλ Characteristics
Lead (Pb) Free Product - RoHS Compliant
2007-04-02 1
Wesentliche Merkmale
• Speziell geeignet für Anwendunge n im Bereich
von 350 nm bis 970 nm
• Angepaßt an die Augenempfindlichkeit (Vλ)
• SMT-Bauform ohne Basisanschluß, geeignet
für IR-Reflow-Löten
• Nur gegurtet lieferbar
Anwendungen
• Umgebungslicht-Detektor
• Beleuchtungsmesser
• Dimmungssensor für Hintergrundbeleuchtung
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Fotostrom Ev = 20 lx, Standard light A, VCE = 5 V
Photocurrent
Ipce (μA)
SFH 3410
SFH 3410-1/2
SFH 3410-2/3
SFH 3410-3/4
Q65110A1211
Q65110A2653
Q65110A2654
Q65110A2655
>3.2
3.2…10
5…16
8…25
Features
• Especially suitable for applications from
350 nm to 970 nm
• Adapted to human eye sensitivity (Vλ)
• SMT package without base connection,
suitable for IR reflow soldering
• Only available on tape and reel
Applications
• Ambient light detector
• Exposure meter for daylight and artificial light
• Sensor for Backlight-Dimming
• For control and drive circuits
2007-04-02 2
SFH 3410
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 5.5 V
Kollektorstrom
Collector cu rr ent IC20 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 0.5 V
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 570 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sensitivity
S = 10% of Smax
λ350 … 970 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.29 mm2
Abmessung der Chipfläche
Dimensions of chip area L × B
L × W0.75 × 0.75 mm × mm
Halbwinkel
Half angle ϕ ± 60 Grad.
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E = 0
Capacitance CCE 3.9 pF
Dunkelstrom
Dark current
VCE = 5 V
ICEO 3 (< 50) nA
Fotostrom
Photocurrent
Ev = 20 lx, Normlicht/standard light A, VCE = 5 V
IPCE >3.2 μA
SFH 3410
2007-04-02 3
Directional Characteristics Srel = f (ϕ)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-1 -2 -3 -4
Fotostrom
Photocurrent
Ev = 20 lx, Normlicht/standard light A
VCE = 5 V
IPCE 3.2…6.3 5…10 8…16 12.5…25
μA
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3, EV = 20 lx
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe
1) IPCEmin is the min. photocurrent of th e specified group
VCEsat 100 100 100 100 mV
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
SFH 3410
2007-04-02 4
Relative Spectral Sensitivity
Srel = f (λ)
Collector-Emitter Current
ICE = f (VCE; EV)
rel
OHF00851
λ
S
400
0500 600 700 800 900 nm 1100
10
20
30
40
50
60
70
80
%
100
λ
V
CE
OHF00854
I
0
0
A
CE
V
V
μ
1 2 3 4 5
10
20
30
40
50
60
70
80
200 lx
100 lx
20 lx
Photocurrent
IPCE = f (EV), VCE = 5 V
Photocurrent IPCE/IPCE(25 °C) = f (TA)
Ev = 20 lx, VCE = 1 V … 5 V
PCE
OHF00852
I
1
1
V
E
A
μ
lx10 100 1000
10
100
1000
PCE
OHF01024
I
-50
0
A
T
˚C
I
PCE (25 ˚C)
-30 -10 10 30 50 90
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.8
Collector-Emitter Capacitance
CCE = f (VCE)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
CCE
pF
V
VC
E
SFH 3410
2007-04-02 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
GEOY6028
4.4 (0.173)
4.8 (0.189)
1.9 (0.075)
1.7 (0.067)
0.3 (0.012)
0.2 (0.008)
0.1 (0.004)
0.0 (0.000)
0.95 (0.037)
1.15 (0.045)
0.8 (0.031)
0.6 (0.024) 0.8 (0.031)
0.4 (0.016)
2.5 (0.098)
2.7 (0.106)
1.1 (0.043)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
1.1 (0.043)
0.9 (0.035) 2.1 (0.083)
1.9 (0.075)
(not connected)
Emitter
Collector
2007-04-02 6
SFH 3410
Lötbedingungen Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Empfohlenes Lötpaddesign
Recommended Solderpad Design
Maße in mm (inch) / Dimensions in mm (inch).
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
min. condition for IR Reflow Soldering:
solder point temperature ≥ 235 °C for at least 10 sec.
OHF02393
1.8 2.4
1.3
1.8
Padgeometrie für
verbesserte Wärmeableitung
heat dissipation
Paddesign for improved
1
0.3
SFH 3410
2007-04-02 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assu red characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in que stion please contact our Sales Organization.
Packing
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material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support dev ices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the us er may be endangered.
