Jun. 2004
CM150RL-24NF
APPLICATION
AC drive inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM150RL-24NF
HIGH POWER SWITCHING USE
¡IC...................................................................150A
¡VCES ......................................................... 1200V
¡Insulated Type
¡7-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
LABEL
U
BNP
VW
1
18
CN
11
WP VP UP
202016.5
18
110
±0.5
(6.05) (6.05)
11.7
262617.5
135
10.5
10.5
18.7
110
10.510.5
10.5 10.5
(13)
48.75
13.75
26.5
4
4-φ5.5
MOUNTING HOLES
78
±0.5
(6.05) (6.05)
2530.5 25 (13)
11
46.3
A
B
13
24.1
(SCREWING DEPTH)
6-M5 NUTS
+1
–0.5
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
P
BU
N
CN-7
CN-8 CN-5
CN-6
UP-1
UP-2 V
CN-3
CN-4
VP-1
VP-2
W
CN-1
CN-2
WP-1
WP-2
CIRCUIT DIAGRAM
Jun. 2004
1200
±20
150
300
150
300
890
MITSUBISHI IGBT MODULES
CM150RL-24NF
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
G-E Short
C-E Short
DC, TC = 76°C*1
Pulse (Note 2)
Pulse (Note 2)
TC = 25°C
Symbol Parameter
Collector current
Emitter current
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART
1200
±20
75
150
520
1200
75
V
V
A
A
W
V
A
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, TC = 86°C*1
Pulse (Note 2)
TC = 25°C
Clamp diode part
Clamp diode part
Symbol Parameter
Collector current
Conditions UnitRatings
VCES
VGES
IC
ICM
PC (
Note 3
)
VRRM
IFM
BRAKE PART
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
750
°C
°C
V
N • m
N • m
g
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Symbol Parameter Conditions UnitRatings
Tj
Tstg
Viso—
—
—
(COMMON RATING)
Jun. 2004
MITSUBISHI IGBT MODULES
CM150RL-24NF
HIGH POWER SWITCHING USE
IC = 15mA, VCE = 10V
Tj = 25°C
Tj = 125°C
VCE = 10V
VGE = 0V
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 150A, VGE = 15V
VCC = 600V, IC = 150A, VGE = 15V
VCC = 600V, IC = 150A
VGE1 = VGE2 = 15V
RG = 2.1Ω, Inductive load switching operation
IE = 150A
IE = 150A, VGE = 0V
IGBT part (1/6 module)*1
FWDi part (1/6 module)*1
Case to fin, Thermal compound Applied (1/6 module)*2
1
0.5
3.0
—
23
2
0.45
—
130
70
400
350
150
—
3.8
0.14
0.23
—
31
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
Ω
—
—
2.1
2.4
—
—
—
675
—
—
—
—
—
5.8
—
—
—
0.051
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
7V
V
68
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
T urn-on rise time
T urn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
RG
Symbol Parameter
VGE(th)
VCE(sat)
Unit
Typ.
Limits
Min. Max.
Test conditions
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
IC = 7.5mA, VCE = 10V
Tj = 25°C
Tj = 125°C
VCE = 10V
VGE = 0V
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 75A, VGE = 15V
VCC = 600V, IC = 75A, VGE = 15V
IF = 75A
IGBT part*1
Clamp diode part*1
1
0.5
3.0
—
11.5
1.0
0.23
—
3.8
0.24
0.36
42
mA
µA
nF
nF
nF
nC
V
°C/W
°C/W
Ω
—
—
2.1
2.4
—
—
—
338
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.2
7V
V
68
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
ICES
IGES
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
RG
Symbol Parameter
VGE(th)
VCE(sat)
*1 : Tc measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Unit
Typ.
Limits
Min. Max.
Test conditions
BRAKE PART
Jun. 2004
MITSUBISHI IGBT MODULES
CM150RL-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
0
10
1
10
2
2
3
5
7
10
3
2
3
5
7
0 100 200 30050 150 250
0
300
250
200
150
100
50
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
T
j
= 25°C
11
12
10
9
V
GE
=
20V 15
13
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
02012 146 8 10 16 18
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
T
j
= 25°C
I
C
= 150A
I
C
= 300A
I
C
= 60A
12 435
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
T
j
= 25°C
T
j
= 125°C
10
–12
10
0
357 2
10
1
357 2
10
2
357
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V 10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
1
10
2
57
10
3
23 5723
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive load
t
d(off)
t
d(on)
t
f
t
r
0246810 0
4
3
2
1
Jun. 2004
MITSUBISHI IGBT MODULES
CM150RL-24NF
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 25°C
Inductive load 10
–3
10
2
10
1
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
23 57 23 57
Single Pulse,
T
C
= 25°C
Under the chip
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(ratio)
TIME (s)
IGBT part:
Per unit base =
R
th(j–c)
= 0.14°C/W
FWDi part:
Per unit base =
R
th(j–c)
= 0.23°C/W
10
0
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
RECOVERY LOSS vs. I
E
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
EMITTER CURRENT I
E
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive load
C snubber at bus
Err
10
2
10
1
10
0
2
3
5
7
2
3
5
7
10
1
10
2
57
10
3
23 5723
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
COLLECTOR CURRENT I
C
(A)
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 2.1Ω
T
j
= 125°C
Inductive load
C snubber at bus Esw(off)
Esw(on)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
10
2
10
1
10
0
Conditions:
V
CC
= 600V
V
GE
= ±15V
I
C
= 150A
T
j
= 125°C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
10
2
10
1
10
0
2
3
5
7
2
3
5
7
10
0
10
1
57
10
2
23 5723
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
GATE RESISTANCE R
G
(Ω)
Conditions:
V
CC
= 600V
V
GE
= ±15V
I
E
= 150A
T
j
= 125°C
Inductive load
C snubber at bus
Err
Jun. 2004
0 200 400 600 800 1000
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
GATE CHARGE QG (nC)
V
CC
= 600V
V
CC
= 400V
I
C
= 150A
0
4
8
16
12
20
0
0
MITSUBISHI IGBT MODULES
CM150RL-24NF
HIGH POWER SWITCHING USE
